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Ga Marking SMD-NPN Transistor

This document provides specifications for the NPN small signal transistor BCX70J, K. It includes details on features, dimensions, packaging, absolute maximum ratings, electrical characteristics, and notes. The transistor is ideal for switching and AF amplifier applications and complements the BCX71 transistor. Specifications include collector-emitter breakdown voltage, emitter-base breakdown voltage, cutoff currents, saturation voltages, DC current transfer ratio, transition frequency, and noise figure.

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Wee Chuan Poon
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825 views4 pages

Ga Marking SMD-NPN Transistor

This document provides specifications for the NPN small signal transistor BCX70J, K. It includes details on features, dimensions, packaging, absolute maximum ratings, electrical characteristics, and notes. The transistor is ideal for switching and AF amplifier applications and complements the BCX71 transistor. Specifications include collector-emitter breakdown voltage, emitter-base breakdown voltage, cutoff currents, saturation voltages, DC current transfer ratio, transition frequency, and noise figure.

Uploaded by

Wee Chuan Poon
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BCX70J, K

Transistors

NPN small signal transistor


BCX70J, K
zFeatures zDimensions (Unit : mm)
1) Ideal for switching and AF amplifier applications. BCX70J,K
2) Complements the BCX71.

0.2Min.
2.9 0.95
0.4 0.45

zPackaging specifications (3)

2.4
1.3
Package Taping (2) (1)

Type Code T116 0.95 0.95


0.15
1.9
Basic ordering unit (pieces) 3000
(1)Emitter Each lead has same dimensions
BCX71J, K (2)Base
Abbreviated symbol : GAJ (BCX70J)
(3)Collector GAK (BCX70K)

zAbsolute maximum ratings (Ta=25°C)


Parameter Symbol Limits Unit
Collector-base voltage VCBO 45 V
Collector-emitter voltage VCEO 45 V
Emitter-base voltage VEBO 5 V
Collector current IC 0.2 A
0.2 W
Collector power dissipation PC
0.35 W ∗
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to 150 °C
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE

1/2
BCX70J, K
Transistors

zElectrical characteristics (Ta=25°C)


Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-emitter breakdown voltage BVCEO 45 − − V IC= 2mA
Emitter-base breakdown voltage BVEBO 5 − − V IC= 10µA
Collector-emitter cutoff current ICES − − 0.1 µA VCE= 45V
Emitter-base cutoff current IEBO − − 0.1 µA VEB= 4V
VCE(sat)1 − − 0.35 V IC/IB= 10mA/ 0.25mA
Collector-emitter saturation voltage
VCE(sat)2 − − 0.55 V IC/IB= 50mA/ 1.25mA
VBE(sat)1 − − 0.85 V IC/IB= 10mA/ 0.25mA
Base-emitter saturation voltage
VBE(sat)2 − − 1.05 V IC/IB= 50mA/ 1.25mA
Base-emitter voltage VBE(on) 0.55 − 0.75 V VCE= 5V, IC= 2mA
hFE1 250 − 630 VCE= 5V, IC= 2mA
DC current transfer ratio −
hFE2 90 − − VCE= 5V, IC= 50mA
Transition frequency fT 125 − − MHz VCE= 5V, IE= 10mA, f=100MHz
Collector output capacitance Cob − − 4.5 pF VCB= 10V, f=1MHz, IE=0A
Noise figure NF − − 6 dB VCE= 5V, IC= 200µA, f=1kHz,Rg=2kΩ
Collector-base cutoff current ICBO − − 20 µA VCB= 45V, Ta=150°C

This parts are classified into the categories below and given hFE item.
Part. No BCX70J BCX70K
hFE1 250 to 460 380 to 630
hFE2 90 or more 125 or more

2/2
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan


Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1
www.s-manuals.com

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