IPM (Intelligent Power Module) Industrial Inverter Operate at High Ambient Temperatures Up To 125°C
IPM (Intelligent Power Module) Industrial Inverter Operate at High Ambient Temperatures Up To 125°C
IPM (Intelligent Power Module) Industrial Inverter Operate at High Ambient Temperatures Up To 125°C
TLP104
IPM (Intelligent Power Module) Unit: mm
Industrial Inverter
Operate at high ambient temperatures up to 125°C
The Toshiba TLP104 consists of an infrared LED and integrated high gain,
high-speed photodetectors. The TLP104 is housed in the SO6 package. The
output stage is an open collector type.
The photodetector has an internal Faraday shield that provides a
guaranteed common-mode transient immunity of ±15 kV/μs. TLP104
guarantees minimum and maximum of propagation delay time, switching
speed dispersion, and high common mode transient immunity. Therefore
TLP104 is suitable for isolation interface between IPM (Intelligent Power
Module) in motor control application.
Forward Current IF 25 mA
Forward Current Derating (Ta ≥ 110°C) ΔIF /°C -0.67 mA/°C
Pulse Forward Current (Note 1) IFP 50 mA
LED
Pulse Forward Current Derating (Ta ≥ 110°C) ΔIFP /°C -1.34 mA/°C
Reverse Voltage VR 5 V
Input Power Dissipation PD 40 mW
Input power Dissipation Derating (Ta ≥ 110°C) ΔPD/°C -1.0 mW/°C
* This item denotes operating range, not meaning of recommended operating conditions.
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Toshiba Electronic Devices & Storage Corporation
TLP104
Electrical Characteristics
(Unless otherwise specified, Ta = −40 to 125°C, VCC =4.5 to 30V)
Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
Forward voltage VF ― IF = 10 mA, Ta = 25 °C 1.45 1.61 1.85 V
Forward voltage
ΔVF / ΔTa ― IF = 10 mA ― -1.8 ― mV /°C
temperature coefficient
LED
Reverse current IR ― VR = 5 V, Ta = 25 °C ― ― 10 μA
Capacitance between
CT ― V = 0 V, f = 1 MHz ― 60 ― pF
terminals
High level output current IOH 1 VF = 0.8 V, VO < VCC ― ― 50 μA
Low level output voltage VOL 2 IF = 10 mA, IO = 2.4 mA ― 0.2 0.6 V
Detector
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TLP104
Switching Characteristics (Unless otherwise specified, Ta = −40 to 125°C, VCC=15V)
Test
Characteristic Symbol Test Condition Min Typ. Max Unit
Circuit
CL=100 pF 30 150 400
Propagation delay time (H→L) tpHL
CL=10 pF ― 90 ―
CL=100 pF 150 350 550
Propagation delay time (L→H) tpLH
IF = 10 mA, CL=10 pF ― 100 ―
5 RL = 20 kΩ ns
Switching Time Dispersion (Note 1)
|tpHL−tpLH| ― ― 400
between ON and OFF
CL = 100 pF
Propagation Delay Skew (Note 2) tpLH−tpHL -50 ― 450
Note : A ceramic capacitor (0.1 μF) should be connected from pin 6 (VCC) to pin 4 (GND) to stabilize the operation
of the high gain linear amplifier. Failure to provide the bypass may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Note 1: f = 10kHz, duty=10%, input current tr = tf = 5 ns
Note 2: Propagation delay skew is defined as the propagation delay time of the largest or smallest tpLH minus
the largest or smallest tpHL of multiple samples. Evaluations of these samples are conducted under identical
test conditions (supply voltage, input current, temperature, etc.).
0.1μF 0.1μF
VF IOH IF
VOL IO VCC
A VCC
V ↑
SHIELD VO SHIELD
IF 0.1 μF 0.1 μF
VCC VCC
SHIELD SHIELD
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TLP104
Test Circuit 5: tpHL, tpLH, |tpHL-tpLH|
IF=10mA(P.G)
(f=10kHz , duty=10%, tr=tf=5ns)
IF 50%
P.G.
0.1μF RL=20kΩ tpHL tpLH
VO
IF Monitor VO
VCC
CL
SHIELD VTHHL=1.5 V
15pF* VOL VTHLH=2.0 V
RIN=100Ω
IF VCM
SW RL=20kΩ
→ 10%
0.1 μF
A B tr tf
VO
・SW B : IF = 0 mA CMH
VCC
VO 11V
SHIELD 1.0 V
・SW A : IF = 10 mA CML
+ -
VCM
1200(V) 1200(V)
CMH= CML=-
tr(μs) tf(μs)
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Toshiba Electronic Devices & Storage Corporation
TLP104
IF- VF I F H L - Ta
100 5
Vcc = 15 V
4 Vo < 0.8 V
10
Ta=125˚C
100˚C
3
I FHL (mA)
75˚C
50˚C
25˚C
0˚C 2
1 -20˚C
-40˚C
1
0.1 0
1 1.2 1.4 1.6 1.8 2 2.2
-40 -20 0 20 40 60 80 100 120 140
I n p u t f o r w a r d v o l t a g e V F (V) A m b i e n t t e m p e r a t u r e Ta (°C)
I C C L - Ta I C C H - Ta
L o w l e v e l s u p p l y c u r r e n t I CCL (mA)
H i g h l e v e l s u p p l y c u r r e n t I CCH (mA)
1.4 1.4
1.2 1.2
1 1
0.8 0.8
0.6 0.6
0.4 0.4
A m b i e n t t e m p e r a t u r e Ta (°C) A m b i e n t t e m p e r a t u r e Ta (°C)
V O L - Ta I O H - Ta
0.6 2
H i g h l e v e l o u t p u t c u r r e n t I OH (μA)
V OL (V)
IF = 10 mA VF = 0.8 V
Vcc = 15 V Vcc = 30 V
0.5 Io = 2.4 mA 1.6 Vo = 30 V
0.4
Low level output voltage
1.2
0.3
0.8
0.2
0.1 0.4
0 0
-40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 40 60 80 100 120 140
Ambient temperature Ta (°C) A m b i e n t t e m p e r a t u r e Ta (°C)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TLP104
tPHL/tPLH/|tPLH-tPHL| - CL t P H L / t P L H / | t P L H - t P H L | - Ta
2000 500
IF = 10 mA, Vcc = 15 V IF = 10 mA, Vcc = 15 V
Propagation delay time, Switching Time
400
tPHL
400 tPHL 100
0 0
0 100 200 300 400 500 600 700 -40 -20 0 20 40 60 80 100 120 140
500 1400
Vcc = 15 V, CL = 100 pF, IF = 10 mA, CL = 100 pF,
Propagation delay time, Switching Time
400
1000
tPLH
800
300
|tPLH –tPHL| 600
200 400
|tPLH –tPHL| tPLH
tPHL 200
100
0 tPHL
0 -200
0 5 10 15 20 0 5 10 15 20 25 30
tPHL/tPLH/|tPLH-tPHL| - RL tPHL/tPLH/|tPLH-tPHL| - RL
1000 500
IF = 10 mA, Vcc = 15 V IF = 10 mA, Vcc = 5 V
Propagation delay time, Switching Time
CL = 100 pF CL = 10 pF
Dispersion between ON and OFF
tPLH
600 300
400 200
|tPLH -tPHL|
|tPLH -tPHL|
200 100
tPHL tPHL
0 0
0 10 20 30 40 50 0 5 10 15 20
L o r d r e s i s t a n c e R L (kΩ) L o r d r e s i s t a n c e R L (kΩ)
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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TLP104
PRECAUTIONS OF SURFACE MOUNTING TYPE PHOTOCOUPLER SOLDERING &
GENERAL STORAGE
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TLP104
(2) Precautions for General Storage
1) Do not store devices at any place where they will be exposed to moisture or direct sunlight.
2) When transportation or storage of devices, follow the cautions indicated on the carton box.
4) Do not store devices in the presence of harmful (especially corrosive) gases, or in dusty conditions.
5) Use storage areas where there is minimal temperature fluctuation. Because rapid temperature
changes can cause condensation to occur on stored devices, resulting in lead oxidation or corrosion,
as a result, the solderability of the leads will be degraded.
7) Do not apply any external force or load directly to devices while they are in storage.
8) If devices have been stored for more than two years, even though the above conditions have been
followed, it is recommended that solderability of them should be tested before they are used.
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TLP104
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