Control Integrated POwer System

(CIPOS™)

IGCM04G60HA

Datasheet

Datasheet Please read the Important Notice and Warnings at the end of this document V 2.4
www.infineon.com page 1 of 16 2017-09-06
Control Integrated POwer System (CIPOS™)
IGCM04G60HA

Table of contents

Table of contents ................................................................................................................................................... 2

CIPOS™ Control Integrated POwer System ............................................................................................................ 3
Features .................................................................................................................................................................. 3
Target Applications ...................................................................................................................................................... 3
Description .................................................................................................................................................................. 3
System Configuration .................................................................................................................................................. 3
Pin Configuration ................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ...................................................................................................................................................... 5
Pin Description ...................................................................................................................................................... 5
HIN(U, V, W) and LIN(U, V, W) (Low side and high side control pins, Pin 7 - 12)......................................................... 5
VFO (Fault-output, Pin 14) ........................................................................................................................................... 6
ITRIP (Over current detection function, Pin 15).......................................................................................................... 6
VDD, VSS (Low side control supply and reference, Pin 13, 16) ................................................................................... 6
VB(U, V, W) and VS(U, V, W) (High side supplies, Pin 1 - 6) .......................................................................................... 6
N (Low side common emitter, Pin 17 - 19) .................................................................................................................. 6
W, V, U (High side emitter and low side collector, Pin 20 - 22) ................................................................................... 6
P (Positive bus input voltage, Pin 23) .......................................................................................................................... 6
Absolute Maximum Ratings ................................................................................................................................... 7
Module Section ............................................................................................................................................................ 7
Inverter Section............................................................................................................................................................ 7
Control Section ............................................................................................................................................................ 7
Recommended Operation Conditions ................................................................................................................... 8
Static Parameters .................................................................................................................................................. 9
Dynamic Parameters ........................................................................................................................................... 10
Bootstrap Parameters ......................................................................................................................................... 10
Mechanical Characteristics and Ratings .............................................................................................................. 11
Switching Times Definition .................................................................................................................................. 11
Circuit of a Typical Application ............................................................................................................................ 12
Electrical characteristic ....................................................................................................................................... 13
Package Outline ................................................................................................................................................... 14
Revision history ................................................................................................................................................... 15

Datasheet 2 of 16 V 2.4
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Control Integrated POwer System (CIPOS™)
IGCM04G60HA

CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ -bridge 600V / 4A

Features Description
Fully isolated Dual In-Line molded module The CIPOS™ module family offers the chance for
 Reverse conducting IGBTs with monolithic body integrating various power and control components
diode to increase reliability, optimize PCB size and system
 Rugged SOI gate driver technology with stability costs.
against transient and negative voltage It is designed to control three phase AC motors and
 Allowable negative VS potential up to -11V for permanent magnet motors in variable speed drives
signal transmission at VBS=15V for applications like a refrigerator and a dish washer.
 Integrated bootstrap functionality The package concept is specially adapted to power
 Over current shutdown applications, which need good thermal conduction
and electrical isolation, but also EMI-save control
 Under-voltage lockout at all channels
and overload protection.
 Low side common emitter
 Cross-conduction prevention The reverse conducting IGBTs are combined with an
 All of 6 switches turn off during protection optimized SOI gate driver for excellent electrical
 Lead-free terminal plating; RoHS compliant performance.

Target Applications System Configuration

 Dish washers  3 half bridges with reverse conducting IGBTs
 Refrigerators  3Φ SOI gate driver
 Fans  Pin-to-heatsink clearance distance typ. 1.6mm
 Low power motor drives

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Pin Configuration
Bottom View

(24) NC
(1) VS(U)
(2) VB(U)
(23) P
(3) VS(V)
(4) VB(V)
(22) U
(5) VS(W)
(6) VB(W)
(21) V

(7) HIN(U)
(8) HIN(V) (20) W
(9) HIN(W)
(10) LIN(U)
(11) LIN(V) (19) N
(12) LIN(W)
(13) VDD
(14) VFO (18) N
(15) ITRIP
(16) VSS
(17) N

Figure 1 Pin configuration

Internal Electrical Schematic

NC (24)

P (23)
(1) VS(U)
(2) VB(U) VB1 HO1

RBS1
VS1 U (22)

(3) VS(V)
(4) VB(V) VB2 HO2

RBS2 V (21)
VS2

(5) VS(W)
(6) VB(W) HO3
VB3

RBS3 VS3 W (20)

(7) HIN(U) HIN1 LO1

(8) HIN(V) HIN2
N (19)
(9) HIN(W) HIN3
(10) LIN(U) LIN1
(11) LIN(V) LIN2 LO2

(12) LIN(W) LIN3

N (18)
(13) VDD VDD
(14) VFO VFO
LO3
(15) ITRIP ITRIP
(16) VSS VSS N (17)

Figure 2 Internal schematic

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IGCM04G60HA

Pin Assignment
Pin Number Pin Name Pin Description
1 VS(U) U-phase high side floating IC supply offset voltage
2 VB(U) U-phase high side floating IC supply voltage
3 VS(V) V-phase high side floating IC supply offset voltage
4 VB(V) V-phase high side floating IC supply voltage
5 VS(W) W-phase high side floating IC supply offset voltage
6 VB(W) W-phase high side floating IC supply voltage
7 HIN(U) U-phase high side gate driver input
8 HIN(V) V-phase high side gate driver input
9 HIN(W) W-phase high side gate driver input
10 LIN(U) U-phase low side gate driver input
11 LIN(V) V-phase low side gate driver input
12 LIN(W) W-phase low side gate driver input
13 VDD Low side control supply
14 VFO Fault output
15 ITRIP Over current shutdown input
16 VSS Low side control negative supply
17, 18, 19 N Low side common emitter
20 W Motor W-phase output
21 V Motor V-phase output
22 U Motor U-phase output
23 P Positive bus input voltage
24 NC No Connection

Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are CIPOSTM
responsible for the control of the integrated IGBT. Schmitt-Trigger

The Schmitt-trigger input thresholds of them are HINx

LINx
INPUT NOISE
FILTER
such to guarantee LSTTL and CMOS compatibility  5k UZ=10.5V
SWITCH LEVEL
VSS
down to 3.3V controller outputs. Pull-down resistor VIH; VIL

of about 5k is internally provided to pre-bias Figure 3 Input pin structure

inputs during supply start-up and a zener clamp is
provided for pin protection purposes. Input a) tFILIN b) tFILIN
Schmitt-trigger and noise filter provide beneficial
HIN HIN
noise rejection to short input pulses. LIN LIN

high
The noise filter suppresses control pulses which are HO HO

below the filter time tFILIN. The filter acts according LO low LO

to Figure 4. Figure 4 Input filter timing diagram

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It is not recommended for proper work to provide The under-voltage circuit enables the device to
input pulse-width lower than 1µs. operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids The IC shuts down all the gate drivers power
the simultaneous on-state of two gate drivers of the outputs, when the VDD supply voltage is below
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and VDDUV- = 10.4V. This prevents the external power
LO3). When two inputs of a same leg are activated, switches from critically low gate voltage levels
only former activated one is activated so that the during on-state and therefore from excessive power
leg is kept steadily in a safe state. dissipation.
A minimum deadtime insertion of typically 380ns is VB(U, V, W) and VS(U, V, W) (High side supplies, Pin
also provided by driver IC, in order to reduce cross- 1 - 6)
conduction of the external power switches.
VB to VS is the high side supply voltage. The high
VFO (Fault-output, Pin 14) side circuit can float with respect to VSS following
the external high side power device emitter voltage.
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered Due to the low power consumption, the floating
over current detection at ITRIP. A pull-up resistor is driver stage is supplied by integrated bootstrap
externally required. circuit.

CIPOSTM The under-voltage detection operates with a rising

VDD
supply threshold of typical VBSUV+ = 12.1V and a
RON,FLT From ITRIP - Latch
VFO falling threshold of VBSUV- = 10.4V.
1
VSS From UV detection
VS(U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50V
Figure 5 Internal circuit at pin VFO transiently. This ensures very stable designs even
under rough conditions.
N (Low side common emitter, Pin 17 - 19)
ITRIP (Over current detection function, Pin 15) The low side common emitter is available for
CIPOS™ provides an over current detection current measurement. It is recommended to keep
the connection to pin VSS as short as possible in
function by connecting the ITRIP input with the
order to avoid unnecessary inductive voltage drops.
IGBT collector current feedback. The ITRIP
comparator threshold (typ. 0.47V) is referenced to W, V, U (High side emitter and low side collector,
VSS ground. An input noise filter (typ.: tITRIPMIN = Pin 20 - 22)
530ns) prevents the driver to detect false over-
These pins are motor U, V, W input pins.
current events.
P (Positive bus input voltage, Pin 23)
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown The high side IGBTs are connected to the bus
propagation delay of typically 1000ns. voltage. It is noted that the bus voltage does not
exceed 450V.
The fault-clear time is set to minimum 40µs.
VDD, VSS (Low side control supply and reference,
Pin 13, 16)
VDD is the control supply and it provides power
both to input logic and to output power stage.
Input logic is referenced to VSS ground.

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Absolute Maximum Ratings

(VDD = 15V and TJ = 25°C, if not stated otherwise)

Module Section
Value
Description Condition Symbol Unit
min max
Storage temperature range Tstg -40 125 °C
Isolation test voltage RMS, f = 60Hz, t = 1min VISOL 2000 - V
Operating case temperature range Refer to Figure 6 TC -40 125 °C

Inverter Section
Value
Description Condition Symbol Unit
min max
Max. blocking voltage IC = 250µA VCES 600 - V
DC link supply voltage of P-N Applied between P-N VPN - 450 V
DC link supply voltage (surge) of P-N Applied between P-N VPN(surge) - 500 V
TC = 25°C, TJ < 150°C -4 4
Output current IC A
TC = 100°C, TJ < 150°C -2.5 2.5
Maximum peak output current less than 1ms IC(peak) -8 8 A
Short circuit withstand time1 VDC ≤ 400V, TJ = 150°C tSC - 5 µs
Power dissipation per IGBT Ptot - 21.8 W
Operating junction temperature range TJ -40 150 °C
Single IGBT thermal resistance,
RthJC - 5.73 K/W
junction-case

Control Section
Value
Description Condition Symbol Unit
min max
Module supply voltage VDD -1 20 V
High side floating supply voltage
VBS -1 20 V
(VB vs. VS)
VIN -1 10
Input voltage LIN, HIN, ITRIP V
VITRIP -1 10
Switching frequency fPWM - 20 kHz

1
Allowed number of short circuits: <1000; time between short circuits: >1s.
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Recommended Operation Conditions

All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Value
Description Symbol Unit
min typ max
DC link supply voltage of P-N VPN 0 - 400 V
High side floating supply voltage (VB vs. VS) VBS 13.5 - 18.5 V
Low side supply voltage VDD 14.0 16 18.5 V
ΔVBS, -1 - 1
Control supply variation V/µs
ΔVDD -1 - 1
VIN 0 - 5
Logic input voltages LIN, HIN, ITRIP V
VITRIP 0 - 5
Between VSS - N (including surge) VSS -5 - 5 V

Figure 6 TC measurement point1

1
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
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Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
IC = 2.5A
Collector-Emitter saturation voltage TJ = 25°C VCE(sat) - 1.6 2.0 V
150°C - 1.8 -

IF = 2.5A
Emitter-Collector forward voltage TJ = 25°C VF - 1.75 2.2 V
150°C - 1.8 -

Collector-Emitter leakage current VCE = 600V ICES - - 1 mA

Logic "1" input voltage (LIN, HIN) VIH - 2.1 2.5 V

Logic "0" input voltage (LIN, HIN) VIL 0.7 0.9 - V

ITRIP positive going threshold VIT,TH+ 400 470 540 mV

ITRIP input hysteresis VIT,HYS 40 70 - mV

VDD and VBS supply under voltage VDDUV+

10.8 12.1 13.0 V
positive going threshold VBSUV+

VDD and VBS supply under voltage VDDUV-

9.5 10.4 11.2 V
negative going threshold VBSUV-

VDD and VBS supply under voltage VDDUVH

1.0 1.7 - V
lockout hysteresis VBSUVH

Input clamp voltage (HIN, LIN, ITRIP) Iin=4mA VINCLAMP 9.0 10.1 12.5 V

Quiescent VBx supply current

HIN = 0V IQBS - 300 500 µA
(VBx only)

Quiescent VDD supply current

LIN = 0V, HINX = 5V IQDD - 370 900 µA
(VDD only)

Input bias current VIN = 5V IIN+ - 1 1.5 mA

Input bias current VIN = 0V IIN- - 2 - µA

ITRIP input bias current VITRIP = 5V IITRIP+ - 65 150 µA

VFO input bias current VFO = 5V, VITRIP = 0V IFO - 2 - nA

VFO output voltage IFO = 10mA, VITRIP = 1V VFO - 0.5 - V

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Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
Turn-on propagation delay time ton - 605 - ns
VLIN, HIN = 5V,
Turn-on rise time tr - 15 - ns
IC = 2.5A,
Turn-on switching time tc(on) - 60 - ns
VDC = 300V
Reverse recovery time trr - 80 - ns
Turn-off propagation delay time VLIN, HIN = 0V, toff - 685 - ns
Turn-off fall time IC = 2.5A, tf - 180 - ns
Turn-off switching time VDC = 300V tc(off) - 210 - ns
Short circuit propagation delay time From VIT,TH+ to 10% ISC tSCP - 1450 - ns
Input filter time ITRIP VITRIP = 1V tITRIPmin - 530 - ns
Input filter time at LIN, HIN for turn
VLIN, HIN = 0V & 5V tFILIN - 290 - ns
on and off
Fault clear time after ITRIP-fault VITRIP = 1V tFLTCLR 40 65 200 µs
Deadtime between low side and high
DTPWM 1.0 - - µs
side
Deadtime of gate drive circuit DTIC - 380 - ns
VDC = 300V, IC = 2.5A
IGBT turn-on energy (includes reverse
TJ = 25°C Eon - 20 - µJ
recovery of diode)
150°C - 35 -
VDC = 300V, IC = 2.5A
IGBT turn-off energy TJ = 25°C Eoff - 40 - µJ
150°C - 70 -
VDC = 300V, IC = 2.5A
Diode recovery energy TJ = 25°C Erec - 10 - µJ
150°C - 25 -

Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Value
Description Condition Symbol Unit
min typ max
Repetitive peak reverse voltage VRRM 600 - - V
VS2 or VS3 = 300V, TJ = 25°C 35
Bootstrap diode resistance of VS2 and VS3 = 0V, TJ = 25°C 40
RBS1 - - Ω
U-phase1 VS2 or VS3 = 300V, TJ = 125°C 50
VS2 and VS3 = 0V, TJ = 125°C 65
Reverse recovery time IF = 0.6A, di/dt = 80A/µs trr_BS - 50 - ns
Forward voltage drop IF = 20mA, VS2 and VS3 = 0V VF_BS - 2.6 - V

1
RBS2 and RBS3 have same values to RBS1.
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Mechanical Characteristics and Ratings

Value
Description Condition Unit
min typ max
Mounting torque M3 screw and washer 0.59 0.69 0.78 Nm
Flatness Refer to Figure 7 -50 - 100 µm
Weight - 6.15 - g

+
-

- +

Figure 7 Flatness measurement position

Switching Times Definition

HINx 2.1V
LINx
0.9V
trr
toff ton
10%
iCx
90% 90%

tf tr
10% 10%
10% 10%
vCEx
tc(off) tc(on)

Figure 8 Switching times definition

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Circuit of a Typical Application

NC (24)

P (23)
(1) VS(U)

(2) VB(U)
VB1 HO1

RBS1 U (22)
VS1

(3) VS(V)

#4
(4) VB(V)
VB2 HO2

RBS2 V (21)
VS2 3-ph AC
Motor
(5) VS(W)

(6) VB(W) HO3

VB3

W (20)
RBS3 VS3

#1 #5
(7) HIN(U)
HIN1
LO1
(8) HIN(V)
HIN2

(9) HIN(W) N (19)

HIN3
(10) LIN(U)
LIN1

(11) LIN(V)
Micro LIN2
LO2 #7
(12) LIN(W)
Controller LIN3
N (18)

VDD line
(13) VDD
VDD Power
(14) VFO
GND line
VFO

(15) ITRIP LO3 #6

ITRIP

GND line
Control
5 or 3.3V line (16) VSS VSS N (17)

#3

#2 U, V, W current sensing
<Signal for protection>
<Signal for protection>

Figure 9 Typical application circuit

1. Input circuit
- To reduce input signal noise by high speed switching, the RIN and CIN filter circuit should be mounted. (100Ω, 1nF)
- CIN should be placed as close to VSS pin as possible.
2. Itrip circuit
- To prevent protection function errors, CITRIP should be placed as close to Itrip and VSS pins as possible.
3. VFO circuit
- VFO output is an open drain output. This signal line should be pulled up to the positive side of the 5V/3.3V logic
power supply with a proper resistor RPU.
- It is recommended that RC filter be placed as close to the controller as possible.
4. VB-VS circuit
- Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.
5. Snubber capacitor

- The wiring between CIPOS™ Mini and snubber capacitor including shunt resistor should be as short as possible.

6. Shunt resistor
- The shunt resistor of SMD type should be used for reducing its stray inductance.
7. Ground pattern
- Ground pattern should be separated at only one point of shunt resistor as short as possible.

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Electrical characteristic
8 8 8
TJ=25℃ VDD=15V
7 7 7
Ic, Collector - Emitter current [A]

Ic, Collector - Emitter current [A]

IF, Emitter - Collector current [A]

6 6 6

5 5 5

4 4 4

3 VDD=13V 3 3
VDD=15V
VDD=20V TJ=25℃
2 2 2
TJ=150℃
1 1 1 TJ=25℃
TJ=150℃
0 0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0
VCE(sat), Collector - Emitter voltage [V] VCE(sat), Collector - Emitter voltage [V] VF, Emitter - Collector voltage [V]
Typ. Collector – Emitter saturation voltage Typ. Collector – Emitter saturation voltage Typ. Emitter – Collector forward voltage

0.35 0.24 100

Eoff, Turn off switching energy loss [mJ]
Eon, Turn on switching energy loss [mJ]

Erec, Reverse recovery energy loss [uJ]

VDC=300V High side @TJ=25℃ VDC=300V
VDD=15V 90 VDD=15V
0.30
0.21 High side @TJ=150℃
Low side @TJ=25℃ 80
High side @TJ=25℃
0.18 Low side @TJ=150℃
0.25
High side @TJ=25℃ 70 High side @TJ=150℃

High side @TJ=150℃ 0.15 Low side @TJ=25℃

60
0.20 Low side @TJ=25℃ Low side @TJ=150℃

Low side @TJ=150℃ 0.12 50

0.15
40
0.09

0.10 30
0.06
20
0.05
0.03
VDC=300V 10
VDD=15V
0.00 0.00 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]

Typ. Turn on switching energy loss Typ. Turn off switching energy loss Typ. Reverse recovery energy loss

800 200 1800

toff, Turn off propagation delay time [ns]
ton, Turn on propagation delay time [ns]

VDC=300V VDC=300V
1700
tc(on), Turn on switching time [ns]

VDD=15V 180 High side @TJ=25℃ VDD=15V

750 High side @TJ=150℃ 1600
160
High side @TJ=25℃ Low side @TJ=25℃
High side @TJ=150℃ 1500
140 Low side @TJ=150℃
700 High side @TJ=25℃
Low side @TJ=25℃ 1400
120 High side @TJ=150℃
Low side @TJ=150℃
1300
Low side @TJ=25℃
650 100
1200 Low side @TJ=150℃
80
1100
600
60
1000

40
550 900

20 VDC=300V 800
VDD=15V
500 0 700
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
Ic, Collector current [A] Ic, Collector current [A] Ic, Collector current [A]

Typ. Turn on propagation delay time Typ. Turn on switching time Typ. Turn off propagation delay time
10
ZthJC, RC-IGBT transient thermal resistance [K/W]

1000 240
VDC=300V VDC=300V
tc(off), Turn off switching time [ns]

900 VDD=15V VDD=15V

200
trr, Reverse recovery time [ns]

800 High side @TJ=25℃ 1

High side @TJ=25℃ High side @TJ=150℃

700
High side @TJ=150℃ 160 Low side @TJ=25℃

600 Low side @TJ=25℃ Low side @TJ=150℃ 0.1 D : duty ratio
D=50%
Low side @TJ=150℃
500 120 D=20%
D=10%
400 0.01
D=5%
80 D=2%
300
Single pulse
200 1E-3
40
100

0 0 1E-4
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 1E-7 1E-6 1E-5 1E-4 1E-3 0.01 0.1 1 10 100
Ic, Collector current [A] Ic, Collector current [A] tP, Pulse width [sec.]

Typ. Turn off switching time Typ. Reverse recovery time IGBT transient thermal resistance at all six
IGBTs operation

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Package Outline

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IGCM04G60HA

Revision history

Document Date of release Description of changes

version
Maximum operating case temperature, Tc= 125°C
V 2.4 Sep. 2017
Package outline update

Datasheet 15 of 16 V 2.4
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