Scribd Logo
Upload

Welcome to Scribd!

  • 83 views

    ST2310HI: High Voltage Fast-Switching NPN Power Transistor

    Uploaded by

    Alfredo Moran
    The ST2310HI is a high voltage, fast switching NPN power transistor. It has enhanced performance including tighter hfe control, improved ruggedness, and high switching speed. Its diffused collector technology provides stable operation across base drive variations. Key specifications include a 1500V collector-emitter voltage, 10A collector current, 7A base current, and 55W total power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    ST2310HI: High Voltage Fast-Switching NPN Power Transistor

    Uploaded by

    Alfredo Moran
    83 views6 pages
    The ST2310HI is a high voltage, fast switching NPN power transistor. It has enhanced performance including tighter hfe control, improved ruggedness, and high switching speed. Its diffused collector technology provides stable operation across base drive variations. Key specifications include a 1500V collector-emitter voltage, 10A collector current, 7A base current, and 55W total power dissipation.

    Original Title

    Data Sheet

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The ST2310HI is a high voltage, fast switching NPN power transistor. It has enhanced performance including tighter hfe control, improved ruggedness, and high switching speed. Its diffused collector technology provides stable operation across base drive variations. Key specifications include a 1500V collector-emitter voltage, 10A collector current, 7A base current, and 55W total power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    83 views6 pages

    ST2310HI: High Voltage Fast-Switching NPN Power Transistor

    Uploaded by

    Alfredo Moran
    The ST2310HI is a high voltage, fast switching NPN power transistor. It has enhanced performance including tighter hfe control, improved ruggedness, and high switching speed. Its diffused collector technology provides stable operation across base drive variations. Key specifications include a 1500V collector-emitter voltage, 10A collector current, 7A base current, and 55W total power dissipation.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 6

     ST2310HI

    HIGH VOLTAGE FAST-SWITCHING


    NPN POWER TRANSISTOR
    ■ NEW SERIES, ENHANCHED
    PERFORMANCE
    ■ FULLY INSULATED PACKAGE FOR EASY
    MOUNTING
    ■ HIGH VOLTAGE CAPABILITY
    ■ HIGH SWITCHING SPEED
    ■ TIGTHER hfe CONTROL
    ■ IMPROVED RUGGEDNESS
    3
    2
    APPLICATIONS: 1
    ■ HORIZONTAL DEFLECTION FOR MONITOR
    15” AND HIGH END TV
    ISOWATT218
    DESCRIPTION
    The device is manufactured using Diffused
    Collector technology for more stable operation Vs
    base drive circuit variations resulting in very low
    worst case dissipation.
    INTERNAL SCHEMATIC DIAGRAM

    ABSOLUTE MAXIMUM RATINGS


    Symbol Parameter Value Uni t
    V CES Collector-Emitter Voltage (V BE = 0) 1500 V
    V CEO Collector-Emitter Voltage (IB = 0) 600 V
    V EBO Emitter-Base Voltage (IC = 0) 6 V
    IC Collector Current 10 A
    I CM Collector Peak Current (tp < 5 ms) 20 A
    IB Base Current 7 A
    P t ot Total Dissipation at Tc = 25 o C 55 W
    o
    T stg St orage Temperature -65 to 150 C
    o
    Tj Max. Operating Junction Temperature 150 C

    February 2000 1/6


    ST2310HI

    THERMAL DATA
    o
    R t hj-ca se Thermal Resistance Junction-case Max 2.3 C/W

    ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


    Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
    I CES Collector Cut-off V CE = 1500 V 1 mA
    Current (V BE = 0)
    I EBO Emitter Cut-off Current V EB = 7 V 1 mA
    (I C = 0)
    V CEO(sus )∗ Collector-Emitter I C = 100 mA L = 25 mH 600 V
    Sustaining Voltage
    (I B = 0)
    V CE(sat )∗ Collector-Emitter IC = 7 A IB = 1.75 A 3 V
    Saturation Voltage
    V BE(s at)∗ Base-Emitt er IC = 7 A IB = 1.75 A 1.1 V
    Saturation Voltage
    h F E∗ DC Current Gain IC = 1 A V CE = 5 V 25
    IC = 7 A V CE = 5 V 6.5 9.5
    INDUCTIVE LO AD IC = 6 A fh = 64 KHz
    ts Storage Time I B(o n) = 1.2 A V BB(off ) = -2.5 V 2.3 2.7 µs
    tf Fall Time L B = 0.4 µH 380 450 ns
    ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

    Safe Operating Area Thermal Impedance

    2/6
    ST2310HI

    Derating Curve DC Current Gain

    Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

    Power Losses Switching Time Inductive Load

    3/6
    ST2310HI

    Reverse Biased SOA

    4/6
    ST2310HI

    ISOWATT218 NARROW LEADS MECHANICAL DATA

    mm inch
    DIM.
    MIN. TYP. MAX. MIN. TYP. MAX.
    A 5.35 5.65 0.211 0.222
    C 3.30 3.80 0.130 0.150
    D 2.90 3.10 0.114 0.122
    D1 1.88 2.08 0.074 0.082
    E 0.75 0.95 0.030 0.037
    F 0.75 0.95 0.030 0.037
    F2 1.50 1.70 0.059 0.067
    F3 1.90 2.10 0.075 0.083
    F5 1.10 0.043
    G 10.80 11.20 0.425 0.441
    H 15.80 16.20 0.622 0.638
    L 9 0.354
    L1 20.80 21.20 0.819 0.835
    L2 19.10 19.90 0.752 0.783
    L3 22.80 23.60 0.898 0.929
    L4 40.50 42.50 1.594 1.673
    L5 4.85 5.25 0.191 0.207
    L6 20.25 20.75 0.797 0.817
    N 2.1 2.3 0.083 0.091
    R 4.6 0.181
    DIA 3.5 3.7 0.138 0.146

    - Weight : 4.9 g (typ.)


    - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
    - The side of the dissipator must be flat within 80 µm P025C/B

    5/6
    ST2310HI

    Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
    of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
    granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
    subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
    are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
    The ST logo is a trademark of STMicroelectronics

     2000 STMicroelectronics – Printed in Italy – All Rights Reserved


    STMicroelectronics GROUP OF COMPANIES
    Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
    Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.

    http://www.st.com

    6/6

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy