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PROCESS CPD18

Central
TM

Ultra Fast Rectifier Semiconductor Corp.


8 Amp Glass Passivated Rectifier Chip

PROCESS DETAILS

Process GLASS PASSIVATED MESA


Die Size 98 x 98 MILS
Die Thickness 12.2 MILS
Anode Bonding Pad Area 82.5 x 82.5 MILS
Top Side Metalization Au - 5,000Å
Back Side Metalization Au - 2,000Å

GEOMETRY
GROSS DIE PER 4 INCH WAFER
1,170

PRINCIPAL DEVICE TYPES


1N5807 thru 1N5811
UES1301 thru UES1306
UES1401 thru UES1403
CUDD8-02 Series

BACKSIDE CATHODE
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com R2 (19-September 2003)
CPD18
Central PROCESS
TM

Semiconductor Corp. Typical Electrical Characteristics

0.001
0 200 400 600 800

145 Adams Avenue


Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com R2 (19-September 2003)

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