Virtex™-E 1.8 V Field Programmable Gate Arrays: Features
Virtex™-E 1.8 V Field Programmable Gate Arrays: Features
R Virtex™-E 1.8 V
Field Programmable Gate Arrays
DS022-1 (v2.3) July 17, 2002 0 0 Production Product Specification
Features
• Fast, High-Density 1.8 V FPGA Family • High-Performance Built-In Clock Management Circuitry
- Densities from 58 k to 4 M system gates - Eight fully digital Delay-Locked Loops (DLLs)
- 130 MHz internal performance (four LUT levels) - Digitally-Synthesized 50% duty cycle for Double
- Designed for low-power operation Data Rate (DDR) Applications
- PCI compliant 3.3 V, 32/64-bit, 33/ 66-MHz - Clock Multiply and Divide
• Highly Flexible SelectI/O+™ Technology - Zero-delay conversion of high-speed LVPECL/LVDS
- Supports 20 high-performance interface standards clocks to any I/O standard
- Up to 804 singled-ended I/Os or 344 differential I/O • Flexible Architecture Balances Speed and Density
pairs for an aggregate bandwidth of > 100 Gb/s - Dedicated carry logic for high-speed arithmetic
• Differential Signalling Support - Dedicated multiplier support
- LVDS (622 Mb/s), BLVDS (Bus LVDS), LVPECL - Cascade chain for wide-input function
- Differential I/O signals can be input, output, or I/O - Abundant registers/latches with clock enable, and
- Compatible with standard differential devices dual synchronous/asynchronous set and reset
- LVPECL and LVDS clock inputs for 300+ MHz - Internal 3-state bussing
clocks - IEEE 1149.1 boundary-scan logic
• Proprietary High-Performance SelectLink™ - Die-temperature sensor diode
Technology • Supported by Xilinx Foundation™ and Alliance Series™
- Double Data Rate (DDR) to Virtex-E link Development Systems
- Web-based HDL generation methodology - Further compile time reduction of 50%
• Sophisticated SelectRAM+™ Memory Hierarchy - Internet Team Design (ITD) tool ideal for
- 1 Mb of internal configurable distributed RAM million-plus gate density designs
- Up to 832 Kb of synchronous internal block RAM - Wide selection of PC and workstation platforms
- True Dual-Port BlockRAM capability • SRAM-Based In-System Configuration
- Memory bandwidth up to 1.66 Tb/s (equivalent - Unlimited re-programmability
bandwidth of over 100 RAMBUS channels) • Advanced Packaging Options
- Designed for high-performance Interfaces to - 0.8 mm Chip-scale
External Memories - 1.0 mm BGA
- 200 MHz ZBT* SRAMs - 1.27 mm BGA
- 200 Mb/s DDR SDRAMs - HQ/PQ
- Supported by free Synthesizable reference design • 0.18 µm 6-Layer Metal Process
• 100% Factory Tested
* ZBT is a trademark of Integrated Device Technology, Inc.
© 2000-2002 Xilinx, Inc. All rights reserved. All Xilinx trademarks, registered trademarks, patents, and disclaimers are as listed at http://www.xilinx.com/legal.htm.
All other trademarks and registered trademarks are the property of their respective owners. All specifications are subject to change without notice.
Virtex-E Compared to Virtex Devices The Virtex-E family is not bitstream-compatible with the Vir-
tex family, but Virtex designs can be compiled into equiva-
The Virtex-E family offers up to 43,200 logic cells in devices
lent Virtex-E devices.
up to 30% faster than the Virtex family.
The same device in the same package for the Virtex-E and
I/O performance is increased to 622 Mb/s using Source
Virtex families are pin-compatible with some minor excep-
Synchronous data transmission architectures and synchro-
tions. See the data sheet pinout section for details.
nous system performance up to 240 MHz using sin-
gled-ended SelectI/O technology. Additional I/O standards
are supported, notably LVPECL, LVDS, and BLVDS, which
General Description
use two pins per signal. Almost all signal pins can be used The Virtex-E FPGA family delivers high-performance,
for these new standards. high-capacity programmable logic solutions. Dramatic
increases in silicon efficiency result from optimizing the new
Virtex-E devices have up to 640 Kb of faster (250 MHz)
architecture for place-and-route efficiency and exploiting an
block SelectRAM, but the individual RAMs are the same
aggressive 6-layer metal 0.18 µm CMOS process. These
size and structure as in the Virtex family. They also have
advances make Virtex-E FPGAs powerful and flexible alter-
eight DLLs instead of the four in Virtex devices. Each indi-
natives to mask-programmed gate arrays. The Virtex-E fam-
vidual DLL is slightly improved with easier clock mirroring
ily includes the nine members in Table 1.
and 4x frequency multiplication.
Building on experience gained from Virtex FPGAs, the
VCCINT, the supply voltage for the internal logic and mem-
Virtex-E family is an evolutionary step forward in program-
ory, is 1.8 V, instead of 2.5 V for Virtex devices. Advanced
mable logic design. Combining a wide variety of program-
processing and 0.18 µm design rules have resulted in
mable system features, a rich hierarchy of fast, flexible
smaller dice, faster speed, and lower power consumption.
interconnect resources, and advanced process technology,
I/O pins are 3 V tolerant, and can be 5 V tolerant with an the Virtex-E family delivers a high-speed and high-capacity
external 100 Ω resistor. PCI 5 V is not supported. With the programmable logic solution that enhances design flexibility
addition of appropriate external resistors, any pin can toler- while reducing time-to-market.
ate any voltage desired.
Banking rules are different. With Virtex devices, all input Virtex-E Architecture
buffers are powered by VCCINT. With Virtex-E devices, the
Virtex-E devices feature a flexible, regular architecture that
LVTTL, LVCMOS2, and PCI input buffers are powered by
comprises an array of configurable logic blocks (CLBs) sur-
the I/O supply voltage VCCO.
rounded by programmable input/output blocks (IOBs), all
interconnected by a rich hierarchy of fast, versatile routing
Revision History
The following table shows the revision history for this document.