K4N35 - K4N36 - K4N37: Photocoupler

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Photocoupler

K4N35 •K4N36 •K4N37

These Photocouplers consist of a Gallium Arsenide Infrared Emitting DIMENSION (Unit : mm)
Diode and a Silicon NPN Phototransistor in 6-pin package. 7.62 0.25
6 5 4 6.4

0.25
FEATURES
• Switching Time - Typ. 3µs

6.4
• Collector-Emitter Voltage : Min.30V 0.25

1 2 3
• Current Transfer Ratio : Typ.100% (at IF=10mA, VCE=10V) 8.9 0.25
0 -15

Orientation Mark
• Electrical Isolation Voltage : AC2500Vrms
PIN NO. AND INTERNAL
• UL Recognized File No. E107486

0.25
CONNECTION DAGRAM

6 5 4

3.8
0.51Min.
APPLICATIONS

2.7Min.
• Interface between two circuits of different potential 0.5
1 2 3
2.54 0.25 1.2
• Vending Machine, Voltage Regulator
• Traffic Controller System
• Programmable Controller

MAXIMUM RATINGS (Ta=25℃ )


Parameter Symbol Rating Unit
Forward Current IF 60 mA
Reverse Voltage VR 5 V
Input *1
Peak Forward Current IFP 3 A
Power Dissipation PD 70 mW
*4
Collector-Emitter Breakdown Voltage BVCEO 35 V
Emitter-Collector Breakdown Voltage BVECO 6 V
Output Collector-Base Breakdown Voltage BVCBO 70 V
Collector Current IC 50 mA
Collector Power Dissipation PC 150 mW
*2 Viso Vrms
Input to Output Isolation Voltage AC2500
Storage Temperature Tstg -55~+125 ℃
Operating Temperature Topr -30~+100 ℃
*3
Lead Soldering Temperature Tsol 260 ℃
Total Power Dissipation Ptot 200 mW
*1. Input current with 100µs pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*4. Customer Option

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Photocoupler
K4N35 •K4N36 •K4N37

ELECTRO-OPTICAL CHARACTERISTICS (Ta=25℃ , unless otherwise noted)


Parameter Symbol Condition Min. Typ. Max. Unit.
Forward Voltage VF IF=10mA - 1.15 1.30 V
Input Reverse Current IR VR=5V - - 10 ㎂
Capacitance CT V=0, f=1MHz - 30 - pF
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 35 - - V
Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V
Output Collector-Base Breakdown Voltage BVCBO IC=0.1mA 70 - - V
Collector Dark Current ICEO IF=0, VCE=10V - - 50 nA
Capacitance CCE VCE=0, f=1MHz - 10 - pF
*5
Current Transfer Ratio CTR IF=10mA, VCE=10V 100 - - %
Collector-Emitter Saturation Voltage VCE(SAT) IF=10mA, IC=0.5mA - 0.15 0.3 V
Input-Output Capacitance CIO V=0, f=1MHz - 1 - pF
Coupled
Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 10 11
- ℃
Rise Time tr VCC=10V, RL=100Ω - 3 10 ℃
Fall Time tf IC=2mA - 3 10 ℃
*5. CTR=(IC/IF) X 100 (%)

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Photocoupler

K4N35 • K4N36 • K4N37

Forward Current vs. Collector Power Dissipation vs. Forward Current vs.
Ambient Temperature Ambient Temperature Forward Voltage
50 250 100

Collector Power Dissipation P C (mW)


Forward Current I F (mA)

40 200 80

Forward Current I F (mA)


30 150 60

Ta=70℃
20 100 40
Ta=25℃

10 50 20

Ta=-55℃
0 0 0
-20 0 20 40 60 80 100 -20 0 20 40 60 80 100 0.4 0.8 1.2 1.6
Ambient Temperature Ta (℃ ) Ambient Temperature Ta (℃ ) Forward Voltage VF (V)

Collector Current vs. Dark Current vs. Collector Current vs.


Collector-Emitter Voltage Ambient Temperature Ambient Temperature
1 100
Ta=25℃

Collector Current I C (mA)


I F =30mA
40 I F =20mA
Dark Current I CEO (㎂)
Collector Current I C (mA)

I F =20mA 0.1 10 I F =10mA


30
I F =5mA

20 VCE =10V
I F =10mA
0.01 1
I F =5mA I F =1mA
10

I F =1mA
0.001 0
0 2 4 6 8 10 0 20 40 60 80 100 -20 0 20 40 60 80
Collector-Emitter Voltage VCE (V)
Ambient Temperature Ta (℃ ) Ambient Temperature Ta (℃ )

Response Time vs. Collector Current vs. Switching Time Test Circuit
Load Resistance Forward Current VIN
R VCC
RL
500 100
VCE=10V Ta=25℃
VCE=10V VO
I C =2mA
Ta =25℃
10
Collector Current I C (mA)
Response Time t r , t f (μs)

100

tf
tr 1
10 Test Circuit

0.1
Input
1
0.01 Output
10%

0.1 0.001 90% tr tf


0.1 1.0 5.0 0.1 1 10 100

Load Resistance R L (㏀) Forward Current


Forward Current II FF (mA)
(mA) Waveform

3/3

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