11 - Jean-Rene Lequepeys - Cea-Leti
11 - Jean-Rene Lequepeys - Cea-Leti
11 - Jean-Rene Lequepeys - Cea-Leti
EMERGING MEMS
TECHNOLOGY AT LETI
|2
About Leti
Founded in 1967
1,800 researchers
250 PhD students + 40 post PhD
CEO
with 37% foreign students Dr. M-N Semeria
2800 patents
311 generated in 2014
40% under license
|3
30+ YEARS BACKGROUND IN MEMS SENSORS
year
80 90 00 10 20
Transfers
1987
XXXXXX
2012
1996
2005
Hygrometer High perf. Miniature Inertial M&NEMS
pressure sensor pressure sensor platform platform
1981
1996
1998
2013
2011
|4
MICROSYSTEMS SECTION
LCMC Lab. LCMA Lab. LCRF Lab. LPI Lab. LCFC Lab.
Sensors Actuators RF Components Packaging & Characterization
Components Components Interposer & Reliability
TECHNOLOGICAL PLATFORM
• MEMS 8”(1000 m²) + FE 8”(3000 m²) Cleanrooms
• Specific MEMS equip. : DRIE, HF-vapor, bonder…
• 5 shifts working: 7days/week – 24h/day
Inertial sensor
Pressure sensor
Acoustic sensor
cMUT Microphone
Magnetic sensor
Gas sensor
RF-MEMS
Q=58000 @ 97MHz Q=24000 @ 4.2 GHz 35V / 40GHz
MEMS actuator
10 diopters @
10V
Energy harvesting
1cm²x1mm
200µW/cm³ @ 200 Hz 1cm³ / 10µW @ 20 Hz 1mW @ 60rpm (1Hz)
Electrostatic gap:
3µm high / 80nm width
Nano-scale
technologie
NEMS resonator MEMS with nano-gap M&NEMS platform
SEM view
RF switch on top of CMOS GMR sensor on top CMOS
circuit of CMOS circuit
NEMS
MEMS / CMOS
Co-integration driver
3D Integrated Capacitors
Passive components (ALD medium k material – h=50µm)
Magnetic core HF inductors (<100 MHz)
integration Breakdown 7,5 KV CoFe/NiMn exchange
R ≈ 4Ω, L ≈ 82nH coupled material
Hermetic packaging
3D technology
3 thinned dies
Cu pillars Back to face interconnect Thinning (20µm) & multi-die stacking (µ-bump or µ-insert)
3D integration (pitch 40µm)
Silicon Smart
Interposer Interposer
|9
TECHNOLOGY BACKGROUND
Material expertise
electromigration
Characterization mechanisms,..
expertise
| 10
M&NEMS PLATFORM
LETI Solution
Magnetometer
Microphone
Sensor being adopted
Issues
Pressure
Humidity
| 11
M&NEMS : A GENERIC TECHNOLOGY FOR
PHYSICAL SENSORS
Miniaturization
Generic platform with 9 to 11 DOF
Separate optimization
Gauge Mass
| 12
M&NEMS WORKING PRINCIPLE
EXAMPLE WITH IN-PLANE ACCELEROMETER
Rotation axis V0
R
Seismic mass g g
VS
R F
F = M.g
V0 Piezoresistive gauge
| 13
M&NEMS WORKING PRINCIPLE
EXAMPLE WITH IN-PLANE ACCELEROMETER
Rotation axis V0
- R+ R
s R
VS g g
s R- R
R
F = M.g
V0
Piezoresistive gauge s
R
s
R
| 14
M&NEMS "GENERIC" PLATFORM
Generic platform
Miniaturized sensors
Well known and robust
piezoresisitive detection
Not sensitive to parasitics
MEMS size mechanical part Very short duty cycle
Separate
and multiplexing
+
optimization
Simple electronics
Nano-size piezoresistive gauge common for all the axis
Y Z
| 15
3-AXIS M&NEMS GYROSCOPE
| 16
M&NEMS 6-AXIS COMPASS/ACCELEROMETER
6-axis mechanical
footprint ≈ 1,1mm²
Low power consumption
(30µW/axis in DC)
1 electronic common for
each of the 6 axis
High linearity
| 17
M&NEMS PRESSURE SENSOR
| 18
M&NEMS IN 300mm
Mass
loading
-
f
f
0
-4
Responsivity l
m2 M eff
Resolution m -2M l3
0
• High resolution
• Very short response time
• High integration
| 20
NEMS-BASED MULTI-GAS SYSTEM
| 22
NEMS-BASED MULTI-GAS SYSTEM
Chromatogram performed
Chromatogram performed on a BTEX mixture
on a fuel gas mixture
| 24
Thank you for your attention
PZT-BASED VARIABLE LENS
| 26