BAW56, BAV70, BAV99

225mW SMD Switching Diode

Small Signal Diode
SOT-23

A F

Features B
E
—Fast switching speed
—Surface device type mounting
—Moisture sensitivity level 1 C
D G
—Matte Tin(Sn) lead finish with Nickel(Ni) underplate
H
—Pb free version and RoHS compliant
—Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code Unit (mm) Unit (inch)
Dimensions
Min Max Min Max
Mechanical Data A 2.80 3.00 0.110 0.118
—Case :SOT-23 small outline plastic package B 1.20 1.40 0.047 0.055
—Terminal: Matte tin plated, lead free., solderable C 0.30 0.50 0.012 0.020
per MIL-STD-202, Method 208 guaranteed D 1.80 2.00 0.071 0.079
—High temperature soldering guaranteed: 260°C/10s E 2.25 2.55 0.089 0.100
—Weight : 0.008gram (approximately) F 0.90 1.20 0.035 0.047
—Marking Code : A1,A4,A7 G 0.550 REF 0.022 REF
H 0.08 0.19 0.003 0.010
Pin Configuration

BAW56 BAV70 BAV99

Ordering Information Suggested PAD Layout

Package Part No. Packing Marking 0.95
SOT-23 BAW56 RF 3K / 7" Reel A1 0.037

SOT-23 BAV70 RF 3K / 7" Reel A4

SOT-23 BAV99 RF 3K / 7" Reel A7
2.0
SOT-23 BAW56 RFG 3K / 7" Reel A1
0.079
SOT-23 BAV70 RFG 3K / 7" Reel A4 0.9
SOT-23 BAV99 RFG 3K / 7" Reel A7 0.035

0.8
0.031

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Maximum Ratings
Type Number Symbol Value Units
Power Dissipation PD 225 mW
Repetitive Peak Reverse Voltage VRRM 70 V
Repetitive Peak Forward Current IFRM 450 mA
Mean Forward Current IO 200 mA
Non-Repetitive Peak Forward Pulse Width=1 sec 0.5
IFSM A
Surge Current Pulse Width=1 μsec 2
Thermal Resistance (Junction to Ambient) RθJA 357 °C/W
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Version : F10
 BAW56, BAV70, BAV99
225mW SMD Switching Diode
Small Signal Diode

Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Type Number Symbol Min Max Units
Reverse Breakdown Voltage IR= 100μA V(BR) 70 - V
IF= 50mA - 1.00 V
Forward Voltage VF
IF= 150mA - 1.25 V
Reverse Leakage Current VR= 70V IR - 2.50 μA
Junction Capacitance VR= 0V, f=1.0MHz CJ - 1.5 pF
Reverse Recovery Time IF=IR=10mA, RL=100Ω, IRR=1mA Trr - 6.0 ns

Tape & Reel specification

TSC label
Item Symbol Dimension(mm)
Top Cover Tape
Carrier width A 3.15 ±0.10
Carrier length B 2.77 ±0.10
Carrier depth C 1.22 ±0.10
Sprocket hole d 1.50 ± 0.10
Carieer Tape Reel outside diameter D 178 ± 1
Reel inner diameter D1 55 Min
Any Additional Label (If Required)
Feed hole width D2 13.0 ± 0.20
P0 Sprocke hole position E 1.75 ±0.10
d
P1
Punch hole position F 3.50 ±0.05
T
E Sprocke hole pitch P0 4.00 ±0.10
A
F Embossment center P1 2.00 ±0.05
C W Overall tape thickness T 0.229 ±0.013
B
Tape width W 8.10 ±0.20
Reel width W1 12.30 ±0.20

W1

D D2 D1

Direction of Feed

Version : F10
 BAW56, BAV70, BAV99
225mW SMD Switching Diode
Small Signal Diode

Rating and Characteristic Curves

FIG 2 Leakage Current vs Junction

FIG 1 Typical Forward Characteristics
Temperature.
1000
Instantaneous Forward Current (mA)

10000

100
VR=20V
Typical

Reverse Current (nA)

1000
Ta=25°C
10

100
1

0.1 10

0.01 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 20 40 60 80 100 120 140 160 180 200
Instantaneous Forward Voltage (V)
Junction Temperature (oC)

FIG 3 Power Dissipation Derating Curve

250

200
Power Dissipation (mW)

150

100

50

0
0 25 50 75 100 125 150 175
Ambient Temperature (°C)

Version : F10
Mouser Electronics

Authorized Distributor

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Taiwan Semiconductor:
BAV70 BAV99 BAW56