STP8NK85Z

STF8NK85Z
N-channel 850V - 1.1Ω - 6.7A - TO-220 /TO-220FP
Zener - protected SuperMESH™ Power MOSFET

General features
VDSS
Type RDS(on) ID
(@Tjmax)
STP8NK85Z 850 V < 1.4 Ω 6.7 A
STF8NK85Z 850 V < 1.4 Ω 6.7 A

■ Extremely high dv/dt capability

3
■ 100% avalange tested
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1
2

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TO-220 TO-220FP
■ Gate charge minimized
■ Very low intrinsic capacitances
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■ Very good manufacturing repeatibility
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Description
P r
The SuperMESH™ series is obtained through an
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Internal schematic diagram
extreme optimization of ST’s well established
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strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
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care is taken to ensure a very good dv/dt
capability for the most demanding applications.
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Such series complements ST full range of high
voltage MOSFETs including revolutionary
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MDmesh™ products.

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Applications
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■
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Switching application

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Order codes
O Part number Marking Package Packaging
STP8NK85Z P8NK85Z TO-220 Tube
STF8NK85Z F8NK85Z TO-220FP Tube

October 2006 Rev 5 1/15

www.st.com 15
 Contents STP8NK85Z - STF8NK85Z

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7

3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
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 STP8NK85Z - STF8NK85Z Electrical ratings

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

TO-220 TO-220FP

VDS Drain-source voltage (VGS = 0) 850 V

VGS Gate- source voltage ± 30 V
ID (1)
Drain current (continuous) at TC = 25°C 6.7 6.7 A
(1)
ID Drain current (continuous) at TC = 100°C 4.3 4.3 A
IDM (2) Drain current (pulsed) 26.7 26.7 (1) A
PTOT Total dissipation at TC = 25°C 150 35 W
Derating factor 1.20 0.28 W/°C
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000
s)V
dv/dt (3)
t(
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Peak diode recovery voltage slope 4.5 V/ns
Insulation withstand voltage (RMS) from all

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VISO three leads to external heat sink - 2500 V

Tj
(t=1s; Tc= 25°C)
Max operating junction temperature P r
Tstg Storage temperature
te -55 to 150 °C

1. Limited only by maximum temperature allowed

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2. Pulse width limited by safe operating area

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3. ISD ≤6.7 A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

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Table 2. Thermal data
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Symbol

u ct Parameter Value Unit

o d TO-220 TO-220FP

Pr
Rthj-case Thermal resistance junction-case max 0.83 3.6 °C/W

et e
Rthj-amb Thermal resistance junction-ambient max
Maximum lead temperature for soldering
62.5 °C/W

o l Tl
purpose
300 °C

b s
O Table 3.
Symbol
Avalanche characteristics
Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 6.7 A
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS 350 mJ
(starting Tj=25°C, Id=Iar, Vdd=50V)

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 Electrical ratings STP8NK85Z - STF8NK85Z

Table 4. Gate-source zener diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30 V

1.1 Protection features of gate-to-source zener diodes

The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.

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 STP8NK85Z - STF8NK85Z Electrical characteristics

2 Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID =1MA, VGS = 0 850 V
Breakdown voltage
Zero Gate voltage VDS = Max Rating 1 µA
IDSS
Drain current (VGS = 0) VDS = Max Rating, TC = 125°C 50 µA

Gate-body leakage
IGSS VGS = ± 20 V ± 10 µA
Current (VDS = 0)

VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 3.75 4.5 V

Static drain-source on
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RDS(on) VGS = 10 V, ID = 3.35 A 1.1 1.4 Ω
resistance

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Table 6. Dynamic
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Symbol Parameter Test conditions
P r Min. Typ. Max. Unit

gfs (1) Forward transconductance

te
VDS = 15v, ID = 3.35 A 6 S
Ciss
Coss
Input capacitance
Output capacitance
o le
VDS = 25 V, f = 1 MHz,
1870
190
pF
pF
Crss Reverse transfer capacitance GS s
V =0

b 44 pF

Coss eq. (2)

Equivalent output
capacitance
- O VDS =0V, VDS = 0V to 680V 75 pF

(t s)
td(on) Turn-on delay time 26 ns
VDD = 425 V, ID = 3.35 A,
tr Rise time 19 ns
td(off)
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Turn-off delay time
RG = 4.7 Ω, VGS = 10 V
(see Figure 18)
58 ns
tf

o d
Fall time 18 ns

Pr
tr(Voff)
tr
Off-voltage rise time
Fall time
VDD = 680 V, ID = 6.7 A,
RG = 4.7 Ω, VGS = 10 V
12
10
ns
ns

et e tc Cross-over time (see Figure 20) 24 ns

o l Qg Total gate charge VDD = 680 V, ID = 6.7 A, 60 nC

b s Qgs
Qgd
Gate-source charge
Gate-drain charge
VGS = 10 V
(see Figure 19)
12
35
84 nC
nC

O 1. Pulsed: pulse duration=300µs, duty cycle 1.5%

2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.

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 Electrical characteristics STP8NK85Z - STF8NK85Z

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current 6.7 A

ISDM(1) Source-drain current (pulsed) 26.7 A

VSD(2) Forward on voltage ISD = 6.7 A, VGS = 0 1.6 V

ISD = 6.7 A, di/dt = 100

trr Reverse recovery time 530 ns
A/µs
Qrr Reverse Recovery Charge 4.5 µC
VDD = 35 V, Tj = 25°C
IRRM Reverse Recovery Current 17 A
(see Figure 20)
ISD = 6.7 A, di/dt = 100
trr Reverse recovery time 690 ns
A/µs
Qrr Reverse recovery charge 6.4 µC
VDD = 35 V, Tj = 150°C
IRRM Reverse recovery current 17 A
(see Figure 20)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
s)
2. Pulse width limited by safe operating area

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 STP8NK85Z - STF8NK85Z Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-220 Figure 2. Thermal impedance for TO-220

Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
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Figure 5. Output characterisics Figure 6. Transfer characteristics

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 Electrical characteristics STP8NK85Z - STF8NK85Z

Figure 7. Transconductancez Figure 8. Static drain-source on resistance

Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations

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Figure 11. Normalized gate threshold voltage Figure 12. Normalized BVDSS vs Temperature
vs temperature

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 STP8NK85Z - STF8NK85Z Electrical characteristics

Figure 13. Normalized on resistance vs Figure 14. Source-drain diode forward

temperature characteristic

Figure 15. Avalanche energy vs temperature

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 Test circuit STP8NK85Z - STF8NK85Z

3 Test circuit

Figure 16. Unclamped inductive load test Figure 17. Unclamped inductive waveform
circuit

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Figure 18. Switching times test circuit for
resistive load u
Figure 19. Gate charge test circuit

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Figure 20. Test circuit for inductive load
switching and diode recovery times

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 STP8NK85Z - STF8NK85Z Package mechanical data

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in ECOPACK®

packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com

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 Package mechanical data STP8NK85Z - STF8NK85Z

TO-220 MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256

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J1 2.40 2.72 0.094

t(
0.107

uc
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40
d
0.645

o
L30
øP
Q
3.75
2.65
28.90
3.85
2.95 P
0.147
0.104
r 1.137
0.151
0.116

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 STP8NK85Z - STF8NK85Z Package mechanical data

TO-220FP MECHANICAL DATA

mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409

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L2 16 0.630

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L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417

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L5 2.9 3.6 0.114 0.141
L6
L7
15.9
9
16.4
9.3
0.626
0.354
P r 0.645
0.366
Ø 3 3.2

e
0.118

t
0.126

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b s E
A

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D

-
B

(t s)
L3
L6

u c L7

d
F1

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Pr
G1

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H

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s o L5
1 2 3

O b L2 L4

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 Revision history STP8NK85Z - STF8NK85Z

5 Revision history

Table 8. Revision history

Date Revision Changes

02-Mar-2005 1 First release

16-May-2005 2 Modified value in table 7
08-Sep-2005 3 Final datasheet
09-Feb-2006 4 ECOPACK label
20-Sep-2006 5 New template, no content change

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STP8NK85Z - STF8NK85Z

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