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    Lab 7

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    Lab 7

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    RedDot
    68 views3 pages

    Original Title

    Lab 7(1) (2)

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    Lab 7

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    RedDot

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    1

    NPN AT DC
    Before beginning this lab, you should:

    • Know the basic operations of NPN transistors


    • Know how to use LTcpice simulator

    After completing this lab, you should be able to:

    • Do DC analysis of three circuits: (I) an NPN transistor that is biased in the active region, (2) an NPN transistor that is
    biased in the saturation region, and (3) a diode-connected NPN transistor
    • Be able to simulate the circuits to compare the results with the paper analysis
    • Implement the circuits in an experimental setting, taking measurements, and comparing their performance with
    theoretical and simulated results
    • Qualitatively seeing the impact of transistor-to-transistor variations.

    NPN AT DC

    This lab is related to section 6.3 of Sedra and Smith Microelectronic circuit textbook. The used
    transistor is a NPN transistor. An unformatted spice model is provided at the end of this manual
    for your reference.

    PART 1: DESIGN AND ANALYSIS


    Consider the circuit shown in Figure 1:

    FIGURE 16.3.1: NPN-based circuit. Related to Fig. 6.29(a) in S&S.

    We need to design the circuit in Figure 1 such that IC = 1mA, VB = 9 V and VC = +5 V.


    Use supplies of V+ = 30V and V_ = 0 V. Use β= 100.

    1
    2

    Pre-lab Calculations:
    • Sketch the circuit in your lab book, clearly labeling the transistor’s three terminals.
    • What are IB and IE?
    • Based on these numbers, what is VE?
    • You now have enough information to calculate RE and RC.
    • Derive the Thévenin equivalent of RB1 and RB2. What values do you need to use to
    achieve VB = 9V? Remember that IB ≠ 0.

    LAB PROCEDURE
    • Simulate your circuit using values of RE, RC, RB1, and RB2 based on your calculations.
    • Report the values of VE, VC, IE, and IC.
    • How closely do they match your calculations?

    We now want to operate the transistor in saturation region. Redesign the circuit in Figure 1
    such that IC = 1 mA, IE = 1.2 mA, VC = +2 V, and VCE = 0.2 V. Note that you must use the
    saturation model.

    • Sketch the circuit in your lab book, clearly labeling the transistor’s three terminals.
    • Based on the specifications, calculate VE and VB.
    • You now have enough information to calculate resistors in the circuit.
    • What is the value of βforced?
    • Simulate your circuit using your calculated values of resistors.
    • Report the values of VE, VC, VB, 1E, IC and IB.
    • How closely do they match your calculations?

    2
    3

    * Copyright © 2000 Linear Technology Corporation. All rights reserved.


    *
    *
    .model 2N2222 NPN(IS=1E-14 VAF=100
    + BF=200 IKF=0.3 XTB=1.5 BR=3
    + CJC=8E-12 CJE=25E-12 TR=100E-9 TF=400E-12
    + ITF=1 VTF=2 XTF=3 RB=10 RC=.3 RE=.2 Vceo=30 Icrating=800m mfg=Philips)

    .model 2N2907 PNP(IS=1E-14 VAF=120


    + BF=250 IKF=0.3 XTB=1.5 BR=3
    + CJC=8E-12 CJE=30E-12 TR=100E-9 TF=400E-12
    + ITF=1 VTF=2 XTF=3 RB=10 RC=.3 RE=.2 Vceo=40 Icrating=600m mfg=Philips)

    .model 2N3904 NPN(IS=1E-14 VAF=100


    + Bf=300 IKF=0.4 XTB=1.5 BR=4
    + CJC=4E-12 CJE=8E-12 RB=20 RC=0.1 RE=0.1
    + TR=250E-9 TF=350E-12 ITF=1 VTF=2 XTF=3 Vceo=40 Icrating=200m mfg=Philips)

    .model 2N3906 PNP(IS=1E-14 VAF=100


    + BF=200 IKF=0.4 XTB=1.5 BR=4
    + CJC=4.5E-12 CJE=10E-12 RB=20 RC=0.1 RE=0.1
    + TR=250E-9 TF=350E-12 ITF=1 VTF=2 XTF=3 Vceo=40 Icrating=200m mfg=Philips)

    .model FZT849 NPN(IS=5.8591E-13 NF=0.9919 BF=230 IKF=18 VAF=90


    + ISE=2.0067E-13 NE=1.4 NR=0.9908 BR=180 IKR=6.8
    + VAR=20 ISC=5.3E-13 NC=1.46 RB=0.023 RE=0.0223
    + RC=0.015 CJC=200E-12 MJC=0.3006 VJC=0.3532
    + CJE=1.21E-9 TF=1.07E-9 TR=9.3E-9 Vceo=30 Icrating=7 mfg=Zetex) ; (C) 1993 ZETEX PLC, Last revision
    14/3/97

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