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N-Channel 60-V (D-S) MOSFET

FEATURES
PRODUCT SUMMARY
• Halogen-free According to IEC 61249-2-21
VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition
0.025 at VGS = 10 V 7.6 • TrenchFET® Power MOSFET
60 10.5 nC • Optimized for “Low Side” Synchronous
0.030 at VGS = 4.5 V 6.5
Rectifier Operation
• 100 % Rg and UIS Tested

APPLICATIONS
D • CCFL Inverter
SO-8

S 1 8 D
S 2 7 D
G
S 3 6 D
G 4 5 D
S

Top View N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 7.6 a
TC = 70 °C 6.8
Continuous Drain Current (TJ = 150 °C) ID
TA = 25 °C 6.1b, c
TA = 70 °C 4.8b, c
A
Pulsed Drain Current IDM 25
TC = 25 °C 4.2
Continuous Source-Drain Diode Current IS
TA = 25 °C 2.1b, c
Avalanche Current IAS 15
L = 0.1 mH
Single-Pulse Avalanche Energy EAS 11.2 mJ
TC = 25 °C 5
TC = 70 °C 3.2
Maximum Power Dissipation PD W
TA = 25 °C 2.5b, c
TA = 70 °C 1.6b, c
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 38 50
°C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 20 25
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.

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SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 60 V
VDS Temperature Coefficient ΔVDS/TJ 55
ID = 250 µA mV/°C
VGS(th) Temperature Coefficient ΔVGS(th)/TJ - 6.3
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.2 2.5 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = 60 V, VGS = 0 V 1
Zero Gate Voltage Drain Current IDSS µA
VDS = 60 V, VGS = 0 V, TJ = 55 °C 10
On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 25 A
VGS = 10 V, ID = 4.6 A 0.025 0.030
Drain-Source On-State Resistancea RDS(on) Ω
VGS = 4.5 V, ID = 4.2 A 0.035 0.040
Forward Transconductancea gfs VDS = 15 V, ID = 4.6 A 20 S
Dynamicb
Input Capacitance Ciss 1100
Output Capacitance Coss VDS = 30 V, VGS = 0 V, f = 1 MHz 90 pF
Reverse Transfer Capacitance Crss 55
VDS = 30 V, VGS = 10 V, ID = 4.6 A 21 32
Total Gate Charge Qg
10.5 16
nC
Gate-Source Charge Qgs VDS = 30 V, VGS = 4.5 V, ID = 4.6 A 3.5
Gate-Drain Charge Qgd 4.2
Gate Resistance Rg f = 1 MHz 3.3 5 Ω
Turn-On Delay Time td(on) 20 30
Rise Time tr VDD = 30 V, RL = 5.4 Ω 150 225
Turn-Off DelayTime td(off) ID ≅ 5.6 A, VGEN = 4.5 V, Rg = 1 Ω 20 30
Fall Time tf 60 90
ns
Turn-On Delay Time td(on) 10 15
Rise Time tr VDD = 30 V, RL = 5.4 Ω 15 25
Turn-Off DelayTime td(off) ID ≅ 5.6 A, VGEN = 10 V, Rg = 1 Ω 25 40
Fall Time tf 10 15
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current IS TC = 25 °C 4.2
A
Pulse Diode Forward Currenta ISM 25
Body Diode Voltage VSD IS = 2 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr 25 50 ns
Body Diode Reverse Recovery Charge Qrr 25 50 nC
IF = 5.5 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Fall Time ta 19
ns
Reverse Recovery Rise Time tb 6
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

25 5
VGS = 10 V thru 4 V
TC = – 55 °C

20 4
ID = 25 °C
ID - Drain Current (A)

ID - Drain Current (A)

15 3

ID = 125 °C
10 2

5 VGS = 3 V 1

0 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.040 1500

1200
Ciss
RDS(on) - On-Resistance (Ω)

0.036 VGS = 4.5 V

C - Capacitance (pF)

900

0.032
VGS = 10 V
600

0.028
300
Coss

Crss
0.024 0
0 5 10 15 20 25 0 10 20 30 40 50 60

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

10 2.0

ID = 4.6 A 1.8
VGS - Gate-to-Source Voltage (V)

8 VGS = 10 V,
RDS(on) - On-Resistance

1.6 ID = 4.6 A
VDS = 30 V
(Normalized)

6
1.4

VDS = 48 V 1.2
4

1.0
2
0.8

0 0.6
0 5 10 15 20 25 - 50 - 25 0 25 50 75 100 125 150

Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30 0.08

RDS(on) - Drain-to-Source On-Resistance (Ω)

ID = 4.6 A
0.07
TJ = 150 °C
IS - Source Current (A)

10
0.06
125 °C

0.05

0.04
TJ = 25 °C

0.03

25 °C
1 0.02
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

2.6 50

2.4
ID = 250 µA
40
2.2

2.0
30
Power (W)
VGS(th) (V)

1.8

1.6 20

1.4
10
1.2

1.0 0
- 50 - 25 0 25 50 75 100 125 150 10-3 10-2 10-1 1 10 100 600

TJ - Temperature (°C) Time (s)

Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10
ID - Drain Current (A)

100 µs

1 1 ms

10 ms

100 ms
0.1
TA = 25 °C 1s
Single Pulse
10 s
BVDSS Limited DC
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

12 5

4
9
ID - Drain Current (A)

Power (W)
Package Limited
6

3
1

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150

TC - Case Temperature (°C) TC - Case Temperature (°C)

Current Derating* Power, Junction-to-Foot

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70 C/W
Single Pulse 3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse

0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

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SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

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RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(6.248) (0.711)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

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