GTAH21140BY4

Innogration (Suzhou) Co., Ltd.
Document Number: GTAH21140BY4

Product Datasheet V1.1
GaN 100W,1-2GHz ,28V,RF Power Transistor

Description
The GTAH21140BY4 is a 28V 100W CW device, both input and output matched GaN HEMT, ideal for multiple
applications from 1-2GHz, and at higher voltage 32V, capable to output more than 120W. GTAH21140BY4
It can support linear and saturated application, configured as push pull or Doherty.
There is no guarantee of performance when this part is used outside of stated frequencies.
 Typical performance across 1-2GHz class AB application circuit with device soldered
CW signal,Idq=180mA
Voltage
Freq Psat Eff Power Gain
(V)
(GHz) (W) (%) (dB)
28 1-2 105-140 >47 11.5-15.4
32 1-2 125-170 >46 11.5-15.5
Applications
 L band pulse power amplifier
 wideband power amplifier
 Beidou power amplifier
Important Note: Proper Biasing Sequence for GaN HEMT Transistors
Turning the device ON Turning the device OFF
1. Set VGS to the pinch--off (VP) voltage, typically –5 V 1. Turn RF power off
2. Turn on VDS to nominal supply voltage 2. Reduce VGS down to VP, typically –5 V
3. Increase VGS until IDS current is attained 3. Reduce VDS down to 0 V
4. Apply RF input power to desired level 4. Turn off VGS
Figure 1: Pin Connection definition

Transparent top view (Backside grounding for source)
Table 1. Maximum Ratings

Rating Symbol Value Unit
Drain--Source Voltage VDSS +150 Vdc
Gate--Source Voltage VGS -10 to +2 Vdc
Operating Voltage VDD 36 Vdc
Maximum gate current Igs 36 mA

Storage Temperature Range Tstg -65 to +150 C
Case Operating Temperature TC +150 C
Operating Junction Temperature TJ +225 C
1 / 5
Innogration (Suzhou) Co., Ltd. Document Number: GTAH21140BY4
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case by FEA
RJC 0.9 C /W
TC= 85C, at Pout=100W CW at 2GHz
Table 3. Electrical Characteristics (TA = 25℃ unless otherwise noted)

DC Characteristics (measured on wafer prior to packaging)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS=-8V; IDS=36mA VDSS 150 V
Gate Threshold Voltage VDS =10V, ID = 36mA VGS(th) -4 -2 V
Gate Quiescent Voltage VDS =28V, IDS=180mA,
VGS(Q) -2.4 V
Measured in Functional Test
Ruggedness Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Load mismatch capability GHz, Pout=100W Pulsed CW
All phase, VSWR 10:1
No device damages
Figure 2: Median Lifetime vs. Channel Temperature
Figure 3: Picture of application board 1-2GHz class AB
2 / 5
Table 4. Bill of materials of application board (PCB layout upon request)
Component Description Suggested types
C1、C2、C3、C4 10uF/50V 1210
C5、C6、C7、C8、C9、C10 18pF DLC70B
R1、R2、R3 Chip Resistor,9.1Ω,1206
L1，L2 D=1.12mm，Arch Height=10mm
PCB 30Mil Rogers 4350B
Figure 4: Psat, Efficiency ,power gain as function of frequency at 28V/32V (CW Signal)
3 / 5
Earless Flanged Ceramic Package; 4 leads
Drain Gate Source

1 2 3 4 5
UNIT A b c D D₁ e E E₁ F H H1 L Q U₁ U₂ W₁ W₂
4.72 4.67 0.15 20.02 19.96 9.50 9.53 1.14 19.94 12.98 5.33 1.70 20.70 9.91
mm 7.90 0.25 0.51
3.43 4.93 0.08 19.61 19.66 9.30 9.25 0.89 18.92 12.73 4.32 1.45 20.45 9.65
0.186 0.194 0.006 0.788 0.786 0.374 0.375 0.045 0.785 0.511 0.210 0.067 0.815 0.390
inches 0.311 0.01 0.02
0.135 0.184 0.003 0.772 0.774 0.366 0.364 0.035 0.745 0.501 0.170 0.057 0.805 0.380
OUTLINE REFERENCE EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION
PKG-B4 03/12/2013
4 / 5
Revision history
Table 4. Document revision history
Date Revision Datasheet Status
2021/12/29 V1.0 Product Datasheet Creation
2022/3/21 V1.1 Modify typo from B4 to BY4
Application data based on: JF-22-01
Notice
Specifications are subject to change without notice. Innogration believes the information within the data sheet to be reliable. Innogration
makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose.
“Typical” parameter is the average values expected by Innogration in quantities and are provided for information purposes only. It can and
do vary in different applications and related performance can vary over time. All parameters should be validated by customer’s technical
experts for each application.
Innogration products are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Innogration product could result in personal injury or death or
in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For any concerns or questions related to terms or conditions, please check with Innogration and authorized distributors
Copyright  by Innogration (Suzhou) Co.,Ltd.
5 / 5

GTAH21140BY4

Uploaded by

Copyright:

Available Formats

GTAH21140BY4

Uploaded by

Document Information

Original Description:

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

GTAH21140BY4

Uploaded by

Copyright:

Available Formats

Innogration (Suzhou) Co., Ltd.

Document Number: GTAH21140BY4

GaN 100W,1-2GHz ,28V,RF Power Transistor

28 1-2 105-140 >47 11.5-15.4

32 1-2 125-170 >46 11.5-15.5

Figure 1: Pin Connection definition

Table 1. Maximum Ratings

Maximum gate current Igs 36 mA

Table 3. Electrical Characteristics (TA = 25℃ unless otherwise noted)

Figure 2: Median Lifetime vs. Channel Temperature

Figure 3: Picture of application board 1-2GHz class AB

PCB 30Mil Rogers 4350B

Drain Gate Source

OUTLINE REFERENCE EUROPEAN

You might also like

Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.