Siemens C35 (I) M35 (I) S35i Service Manual LVL 25e v10
Siemens C35 (I) M35 (I) S35i Service Manual LVL 25e v10
Siemens C35 (I) M35 (I) S35i Service Manual LVL 25e v10
Level 2.5e
Repair Documentation
V 1.0
3 REQUIRED SOFTWARE............................................................................................................................ 5
4 RADIO PART................................................................................................................................................ 6
4.4 RECEIVER................................................................................................................................................. 12
6 LOGIC PART............................................................................................................................................... 29
Ø Windows NT Version4
Ø Winsui P35
Ø Winswup
Ø Windows software for GSM-Tester
Ø Software for 13MHz adjustment
• Power supply
• Synthesizer
• Receiver
• Transmitter
• Transmitter (Power amplifier)
• Antenna Switch
The generation of the 13MHz signal is done in the P35 via a discrete VCXO. Notes
A Colpitts oscillator with a post-switched buffer stage is used as oscillator switch.
The subsequent oscillating circuit (C607,C683, L600) and the resistor R650
create a de-coupling of the synthesiser from interference signals coming from the
logic.
The oscillator frequency is controlled by the (AFC_PNM) signal which is generated
from the EGOLD and the capacity diode V600.
To reduce the charging time of the low pass (R671, C671) the resistor R671 is
bridged by the diode V671
For the temperature control a temperature-dependent resistance R673 is placed
near the VCXO.
The required voltage VCC_VCXO is provided by the N400 (UTXVCO) through R411
The picture 4211 shows you the signal at the collector of the transistor V685.
4211
The first local oscillator (LO1) consists of the PLL-IC (D402), a loop filter Notes
and a VCO (Z404) module. This LO1 circuit generates frequencies from
1144MHz to 1191MHz for GSM 900 operation and from 1574MHz to 1666MHz for
GSM 1800 operation. It is switched to select the channels in stages of 200kHz.
The loop filter has a limit frequency of approx. 10kHz and a periodic suppression.
The VCO module is switched on via the signal PUPLO (V401).
The switching between GSM900 and GSM1800 is done via the signal _GSM (V402),
generated by (D402) through the programming signals SYGCCL, SYGCDT,SYNSTR
The VCO output signal enables the BRIGHT IC to mix the IF-Frequency (225 MHz)
The VCO output is also guided to the PLL-IC (D402) to ensure the frequency stability
(DO1<>VCTRL). To do so the 13MHz frequency is used as the reference signal for
the PLL circuit.
The programming of the PLL-IC is realised by the EGOLD with the signals:
SYGCCL; SYGCDT and SYNSTR.
4221
4222
The second local oscillator (LO2) consists of the PLL-IC (D402), a loop filter, the Notes
BRIGHT IC and a discrete VCO. The LO2 circuit generates the frequencies 520MHz
or 540MHz as required. The mobile phone normally uses the frequency 540MHz.
The LO2 switches to 520MHz in the GSM1800 TX mode only. The Signal (_GSM) is
used for switching. The loop filter has a limit frequency of approx. 10kHz and a
periodic suppression.
The oscillator is constructed discretely, whereby the active part and its operating
point setting are integrated in the BRIGHT (see BRIGHT Block diagram) .
The PUPLO signal is switching on the discrete LO2 circuit.
The BRIGHT IC is supplied via L445 with VCCBRIGHT
4231
from PLL
to PLL
Bright IC
Blockdiagramm
b: The electrical antenna switch (Diplexer Z503) for the differentiation between
the receiving and transmitting signals, just like the differentiation between
GSM900 and GSM1800
To do so the signals “_GSM; TXONPA; RXON2” are required to switch the
input signals VC1–VC4.
The matrix below shows the different conditions at the Diplexer and the
accompanying signals.
After the antenna switch, up to the first mixer the GSM1800 receiver circuit Notes
Consists of a ceramic front end filter (Z450),a LNA (Low Noise Amplifier V450) and
a ceramic inter-stage filter (Z451).
The front-end filter (double-pole ceramic filter) has an insertion loss of max. 1.5dB
with an intermediate frequency selection of minimum 32dB.
The GSM1800 LNA V450 is a discrete module with an amplification of approx. 17dB.
The collector current of the transistor is stabilised via an integrated regulating switch
inside the BRIGHT Z4450.The collector current is defined through the resistance of
the resistor R471. The LNA is switched on via the signal (RFIN2) from BRIGHT IC.
After the amplification an other inter-stage filter ((Z451) a 3-pole ceramic filter) is
used to reduce the amplification interference.
This filter has an insertion loss of maximum 3.7dB with an intermediate frequency
selection of minimum 38dB.
The non-symmetrical output of the filter (Z451) is connected to the 1st PCN mixer
via a balancing and adaptation circuit .(C454, L452, C459, C455) This circuit
converts the asymmetrical input signal into a symmetrical signal.
from Antenna
switch
Switch
to GAIM
After the antenna switch the GSM900 receiver signal runs through the SAW front Notes
end filter (Z460). The front end filter has an insertion loss of approx. 2.5dB and a
ripple of approx. 1dB.
The amplification of the subsequent LNA V460 has been reduced to approx. 18dB
The operating point stabilisation of the LNA transistor is accomplished via the
BRIGHT and the resistor R471. The LNA is switched on via the signal (RFIN1)
from BRIGHT IC. The output is adapted by corresponding components to the
subsequent SAW inter-stage filter (Z461). This filter has an insertion loss of approx.
3.5dB and a ripple of approx. 1.5dB. The symmetrical filter output of the inter-stage
filter is adapted to the input of the first mixer (Z4450).
The symmetrical output of the filter (Z461) is connected to the 1st GSM mixer
via an adaptation circuit .(C466, C467 L462)
IF-Circuit
4421
from Antenna
switch
Switch 4422 4423 4424
to GAIM
The BRIGHT IC (Z4450) has two separate input mixers one for EGSM900 and Notes
one for GSM1800. Both mixer blocks are designed as Gilbert cells and they are
switchable in the conversion gain (dynamic: 12dB for GSM and 10dB for PCN).
The mixing result for both mixers is an intermediate frequency from 225MHz.
For GSM900 the LO1 frequency is RX frequency plus intermediate frequency.
For GSM1800 the LO1 frequency is RX frequency minus intermediate frequency.
After passing an external IF Filter (Z440) the signal is mixed down with the LO2 to
45MHz. After further filtration the 45MHz IF signal arrives at the programmable IF
amplifier in the (Z4450). This amplifier has a dynamic of 96dB and can be set via a
6-bit programming word (PGCSTR;SYGCDT;SYGCCL) in 2dB steps.
Finally the signal is mixed down in the demodulator to DC in order to generate the
differential I and Q signals.(RX_I,RX_IX-RX_Q,RX_QX) This signals are guided to
the EGAIM to the A/D converters in the base band path.
4432
2 LO
4431
IF-Circuit
from LNA
4433
4434
to GAIM
The P35 modulation is based on the principle of the up-conversion modulation Notes
phase locked loop and is accomplished via the BRIGHT IC(Z4450).
The BRIGHT IC provides the quadratic modulator with the TX IF signals
(GSM 270MHz/ PCN 135/130MHz). Whereby these frequencies are mixed from
the second local oscillator signals.
This “wrong GMSK RF signal” is compared in a phase detector with the down mixed
“final GMSK RF signal”.
To get the comparison signal the TXVCO signal is mixed with LO1 signal.
With the help of the 1.LO the GMSK-RF signal appearing at
the output of the TXVCO (Z480) is mixed to a ZF (GSM 270MHz/ PCN 135/130MHz)
below the TX signal and is led on to the phase detector. The I-Q modulated signal in
the ZF position (GSM 270MHz/ PCN 135/130MHz) is also led to the phase detector.
The output signal of the phase detector passes a discrete loop filter formed from
capacitors and resistors and controls the TXVCO to work on the right frequency.
This large loop band width guarantees that the regulating process is considerably
quicker than the changes in the modulation signal.
The TXVCO is a so-called two-in-one VCO, this means the VCO module contains
the GSM-VCO and the PCN-VCO in one housing.
Via a transistor switch (V480) by using the signal _GSM the TXVCO is switched
from GSM to PCN.
90°
270 MHz
130/135 MHz
880-915 MHz
:2
1710-1785 MHz 270 MHz
130/135 MHz
Phase 270 MHz I Q
Detector 130 MHz Modulator
135 MHz
TX-VCO TP
Mod Signal
4512
4511
Splited by a discrete circuit into GSM900 GSM1800 the TXVCO output signal Notes
arrives at the power amplifier. The dual band power amplifier module (N502)
is assembled on a ceramic substrate in one housing. The module amplifies the
output signal of the TXVCO to the required PCL (controlled by the feedback circuit
according to settings from the logic) .The different amplifiers are switched on by the
TXONPCN/TXONGSM via the transistor (V508). The signal PA_Comp is required for
the operation point setting of low GSM PCLs. The power amplifier is feeded directly
from the battery (BATT+).
After amplification the signal passes on the way to the antenna the diplexer (Z503)
and antenna connector (X501)
A part of the TX output signal is decoupled via a directional coupler (realised by
conductive tracks) and is equalised at a detector diode (V505).
This so gained voltage is compared by an operation amplifier (N501) with the
PA_RAMP signal provided by the GAIM, to ensure that the PA is working within the
required PCL´s
For temperature compensation the other part of the detector diode (V505) is used.
4521
4523
4524
4522
• Watchdog monitor
1.Control of “switching off” the mobile phone via WATCHDOG_µP.
2. Watchdog observation
If the phone has not been used for a longish time (longer than approx. 1 month),
the battery could be totally self-discharged (battery voltage too low), so that it is not
possible to charge the battery via the normal charging circuit.
Only trickle charging is possible below a level of 3.2 V (charging current <10mA).
After approx. 2 hours of trickle charging it is possible to charge the phone via the
“normal” charging circuit.
All internal timers and pulses are derived from a 900 kHz ± 10% internal oscillator.
Responsible for the frequency stability is an external resistor (R228) (1%) at the
RREF pin
Exceptions:
a) The temperature comparator does give a signal for high
temperature
b) An overvoltage is present at the VDD.
C) A falling edge at the CHARGE_UP.
WATCHDOG_uC RESET_2V0
ON/OFF1 RESET_2V65
Control Unit
ON/OFF2 POWER_ON
EXT_POWER LOW_BATT
SLEEPQ
1.92 V 140 mA VLDO2V0
VDD_LDO Linear Regulator
Linear Regulator
TBAT
< 55°C ? CHARGE
CHARGE_uC & Charge FET Driver
VSIM_ON
1. WD-Observation
2. WD-Observation
3. WD-Observation
Charging Concept
General
The battery is charged in the unit itself. The hardware and software is designed for
both for NiMH batteries and for Li-Ion batteries.
As soon as the phone is connected to an external charger, charging starts.
(The customer can see this via the “Charge” symbol in the display).
During normal use the phone is being charged (restrictions: see below).
Charging is enabled via an MOS-FET switch. This MOS-FET switch activates the
circuit for the external charger to the battery. The processor takes over the steering
of this switch depending on the charge level of the battery, whereby a disable
function in the STV-ASIC hardware can interrupt the charging in the case
of too high temperature of the battery, or an overvoltage at VDDLP(D200).
A line (SB) is used for recognition and control of the S25 charger.
The P35 external power supply is equiped with a high Ohm input and will therefore
be recognised as a rapid charger. The charging software is able to charge the
battery within a range from 400-700mA.
If the MOS-FET is switched off, only trickle charging is active.
For controlling the charging process it is necessary to measure the battery cell
temperature (only NiMH), the ambient (phone) temperature and the battery voltage.
The temperature sensor is a NTC resistor with a nominal resistance of 10kΩ at 25°C.
The determination of the temperature is achieved via a voltage measurement on a
voltage divider consisting of the NTC and 2 other resistors(D100). The NTC
for measuring the battery cell temperature is assembled in the battery pack. The
NTC for the ambient temperature is soldered on the PCB(R673).
5211 5212
Trickle Charging
A special circuit permits charging the battery if the normal charging circuit is not
working due to a low level of battery voltage.
This charging current will be about 10mA max. This trickle charging circuit is
voltage-restricted, so that a battery can not be overcharged under no circumstances.
Trickle charging is a way to charge completely discharged batteries up to a voltage
which allows the logic to switch to normal charging automatically.
• A battery which is completely discharged can not be charged quickly (normal). Notes
In this case the battery is charged via a trickle charging with approx. 10mA.
However, the charging symbol is not shown in the display due to the not working
logic.
The charging time for the trickle charging (until the battery can be recharged
quickly) is approx. 4 hours. If, within this time, a voltage of 3.2V is exceeded,
the ASIC switches into the Charge-Only Mode.
In some circumstances it can happen that, after switching on, the voltage
collapses so strongly that the mobile phone switches off again. In this case
trickle charging continues until the user breaks off the trickle charging in order to
activate the rapid charge and starts recharging again (e.g. by pulling out the plug
from the mains supply and plugging in again!).
• A phone with a fully charged Li-Ion battery cannot be charged in the standby
or talk modus in the beginning, because any input current would cause an
increase off the battery voltage above the maximum permissible value. If, through
using the phone, the battery has been discharged down to 95%
the battery can be charged again.
• The phone cannot be operated without a battery.
• The phone would be destroyed if the battery were wrongly poled:
⇒ This is prevented mechanically by the design.
⇒ electrically, a correctly poled battery is presumed, i.e. correct poling must be
guaranteed by suitable QA measures at the supplier. If an unsuitable
charger is connected, the mobile phone can be destroyed:
⇒ a charger voltage >15V can destroy resistors or capacitors in the current
supply path.
⇒ a charger voltage >20V can destroy the MOS-FET switch transistor in the
current supply.
PE.1
F32K
VDDRTC
RTCOUT
MRST / - / PE.7
MTSR / - / PE.6
SSCCLK / - / PE.5
TXD0 / - / PE.4
RXD0 / - / PE.3
TXDD / TXD1 / PF.6
TFSD / T2IN / PF.10
SCLK / T6EUD / PF.8
RFSD / - / PF.9
RXDD / RXD1 / PF.7
F13M
CLKANA
CLKSXM / A21 / PF.5
PDOUT / A23 / PF.4
VDDa
VSSa
VCXO_EN / - / PE.8
DSPOUT0 / A22 / PF.3
TXD1 / CC04IO / PE.0
RXD1 / EX1IN & T5EUD /
requires ext. crystal
and special bondout 3 2 5
2
E-GOLD Architecture
Osc. SSC
SPI 5
32.768 kHz RTC compatible DSP Serial
Enable Signals to
RESET_IN X- and PD-Bus Communication
Clock Generation Peripherals Viterbi A51/52
ASC0 Peripheral Enable HW Cipher Interface
16 CAPCOM Autobaud ASC1 Generator Accelerator Unit Enhanced Handsfree / DAI
Detect
2 x 8 bit
6.2 Overview EGOLD
D(7:0) External
8 16 Interleaving
Page 30 of 35
A(20:0) Bus & Port 2 x 28 x 116 x 1
21 24 PRAM Interrupt Controller
BHE / CC00IO / PF.15 1k x 16
OCEM
RD Controller DACI
WR
RSTOUT / EX6IN & T3EUD / PF.2
Company Confidential
CS0 PROM GMSK Modulator
CS1
2 CS(4:0)
Bus
Boot
Block
1k x 16
CS2 / CC02IO / PF.12 5 Interface DACQ
CS3 / EX4IN & DSPIN0 & T4EUD / PF.13 3
SEIB
CS4 / DSPOUT2 / PF.14
Shared Memory
AFC Unit Unit Dual Port 512 x 16
AFC
Pulse-Carry Mod.
TRST
TAP Controller TMS
SIM card
Keypad SRAM GSM JTAG TCK
Interface RF Control
Interface xk x 16 (x = 0...64) TDMA Timer TDI
High Speed Boundary Scan
(F=512, D=8/16) TDO
Company confidential
to MCU &
4 6 9 5 3 3 4
Clock Generation Unit
CCIN
CCIO
CCLK
RFCLK
CCRST
T_OUT3
T_OUT2
T_OUT1
T_OUT0
RFSTR1
RFSTR0
RFDATA
GAIMCLK
GAIMSTR
VSS1.(2:0)
VSS2.(4:1)
VDD1.(2:0)
VDD2.(4:1)
GAIMDATA
GAIMRXON
KP5 / - / PB.5
KP4 / - / PB.4
CCVZ / - / PB.10
VDD2.0x, x=a,b,c
03/01
ICM MP CC ST
6.3 Overview EGAIM
The Acoustic components are driven and controlled from the EGOLD (Ringer,Vibra)
via the signals Ringer_µC and Vibra_µC
The vibrator is activated by the transistor V307 via the Signal Vibra_µC from Notes
Egold. Batt+ is required to provide the VIBRA. The diode V306 is used to protect
the circuit against over voltage and switching spikes.
The ringer is connected to Batt+. The ringing tone is generated by a pulsing signal
Ringer_µC from the EGold which is switching the FET V305-2 at the wanted
frequency
Notes