MCP1703

250 mA, 16V, Low Quiescent Current LDO Regulator

Features: Description:
• 2.0 µA Typical Quiescent Current The MCP1703 is a family of CMOS low dropout (LDO)
• Input Operating Voltage Range: 2.7V to16.0V voltage regulators that can deliver up to 250 mA of
• 250 mA Output Current for Output Voltages  2.5V current while consuming only 2.0 µA of quiescent
current (typical). The input operating range is specified
• 200 mA Output Current for Output Voltages < 2.5V
from 2.7V to 16.0V, making it an ideal choice for two to
• Low Dropout Voltage, 625 mV typical @ 250 mA six primary cell battery-powered applications, 9V
for VR = 2.8V alkaline and one or two cell Li-Ion-powered
• 0.4% Typical Output Voltage Tolerance applications.
• Standard Output Voltage Options: The MCP1703 is capable of delivering 250 mA with
- 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, only 625 mV (typical) of input to output voltage
5.0V differential (VOUT = 2.8V). The output voltage tolerance
• Output Voltage Range: 1.2V to 5.5V in 0.1V of the MCP1703 is typically ±0.4% at +25°C and ±3%
increments (50 mV increments available upon maximum over the operating junction temperature
request) range of -40°C to +125°C. Line regulation is ±0.1%
• Stable with 1.0 µF to 22 µF Ceramic Output typical at +25°C.
Capacitance Output voltages available for the MCP1703 range from
• Short-Circuit Protection 1.2V to 5.5V. The LDO output is stable when using only
• Overtemperature Protection 1 µF of output capacitance. Ceramic, tantalum, or
aluminum electrolytic capacitors can all be used for
input and output. Overcurrent limit and overtemperature
Applications:
shutdown provide a robust solution for any application.
• Battery-powered Devices Package options include the SOT-223-3, SOT-23A,
• Battery-powered Alarm Circuits 2x3 DFN-8, and SOT-89-3.
• Smoke Detectors
• CO2 Detectors
Package Types
• Pagers and Cellular Phones 2x3 DFN-8 * 3-Pin SOT-23A
• Smart Battery Packs
VOUT 1 8 VIN VIN
• Low Quiescent Current Voltage Reference
NC 2 EP 7 NC 3
• PDAs
NC 3 9
• Digital Cameras 6 NC
• Microcontroller Power GND 4 5 NC
1 2
• Solar-Powered Instruments
GND VOUT
• Consumer Products
• Battery Powered Data Loggers
3-Pin SOT-89 SOT-223-3
Related Literature: VIN

• AN765, “Using Microchip’s Micropower LDOs”,

DS00765, Microchip Technology Inc., 2002
• AN766, “Pin-Compatible CMOS Upgrades to
Bipolar LDOs”, DS00766, 1 2 3 1 2 3
Microchip Technology Inc., 2002 GND VIN VOUT VIN GND VOUT
• AN792, “A Method to Determine How Much
Power a SOT23 Can Dissipate in an Application”, * Includes Exposed Thermal Pad (EP); see Table 3-1.
DS00792, Microchip Technology Inc., 2001

 2010 Microchip Technology Inc. DS22049E-page 1

MCP1703
Functional Block Diagrams

MCP1703

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

Typical Application Circuits

MCP1703
VOUT
3.3V
VOUT
IOUT
COUT 50 mA
VIN 1 µF Ceramic
VIN VIN
9V +
CIN
Battery 1 µF Ceramic
GND

DS22049E-page 2  2010 Microchip Technology Inc.

 MCP1703
1.0 ELECTRICAL † Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
CHARACTERISTICS a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings † operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
VDD..................................................................................+18V may affect device reliability.
All inputs and outputs w.r.t. .............(VSS-0.3V) to (VIN+0.3V)
Peak Output Current ...................................................500 mA
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ................................. +150°C
ESD protection on all pins (HBM;MM) 4 kV;  400V

DC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters Symbol Min Typ Max Units Conditions
Input / Output Characteristics
Input Operating Voltage VIN 2.7 — 16.0 V Note 1
Input Quiescent Current Iq — 2.0 5 µA IL = 0 mA
Maximum Output Current IOUT_mA 250 — — mA For VR  2.5V
50 100 — mA For VR < 2.5V, VIN  2.7V
100 130 — mA For VR < 2.5V, VIN  2.95V
150 200 — mA For VR < 2.5V, VIN  3.2V
200 250 — mA For VR < 2.5V, VIN  3.45V
Output Short Circuit Current IOUT_SC — 400 — mA VIN = VIN(MIN) (Note 1), VOUT = GND,
Current (average current) measured
10 ms after short is applied.
Output Voltage Regulation VOUT VR-3.0% VR±0.4 VR+3.0% V Note 2
VR-2.0% % VR+2.0%
VOUT Temperature Coefficient TCVOUT — 50 — ppm/°C Note 3
Line Regulation VOUT/ -0.3 ±0.1 +0.3 %/V (VOUT(MAX) + VDROPOUT(MAX)) VIN
(VOUTXVIN) 16V, Note 1
Load Regulation VOUT/VOUT -2.5 ±1.0 +2.5 % IL = 1.0 mA to 250 mA for VR >= 2.5V
IL = 1.0 mA to 200 mA for VR < 2.5V
VIN = 3.65V, Note 4
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

 2010 Microchip Technology Inc. DS22049E-page 3

MCP1703
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VOUT(MAX) + VDROPOUT(MAX), Note 1,
ILOAD = 100 µA, COUT = 1 µF (X7R), CIN = 1 µF (X7R), TA = +25°C.
Boldface type applies for junction temperatures, TJ (Note 7) of -40°C to +125°C.
Parameters Symbol Min Typ Max Units Conditions
Dropout Voltage VDROPOUT — 330 650 mV IL = 250 mA, VR = 5.0V
Note 1, Note 5 — 525 725 mV IL = 250 mA, 3.3V VR < 5.0V
— 625 975 mV IL = 250 mA, 2.8V VR < 3.3V
— 750 1100 mV IL = 250 mA, 2.5V  VR < 2.8V
— — — mV VR < 2.5V, See Maximum Output
Current Parameter
Output Delay Time TDELAY — 1000 — µs VIN = 0V to 6V, VOUT = 90% VR,
RL = 50 resistive
Output Noise eN — 8 µV/(Hz)1/2 IL = 50 mA, f = 1 kHz, COUT = 1 µF
Power Supply Ripple PSRR — 44 — dB f = 100 Hz, COUT = 1 µF, IL = 100 µA,
Rejection Ratio VINAC = 100 mV pk-pk, CIN = 0 µF,
VR = 1.2V
Thermal Shutdown Protection TSD — 150 — °C
Note 1: The minimum VIN must meet two conditions: VIN2.7V and VIN (VOUT(MAX) + VDROPOUT(MAX)).
2: VR is the nominal regulator output voltage. For example: VR = 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.0V, or 5.0V.
The input voltage VIN = VOUT(MAX) + VDROPOUT(MAX) or ViIN = 2.7V (whichever is greater); IOUT = 100 µA.
3: TCVOUT = (VOUT-HIGH - VOUT-LOW) *106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the
temperature range. VOUT-LOW = lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCVOUT.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired Junction temperature. The test time is small enough such that the rise in the Junction temperature over the
ambient temperature is not significant.

TEMPERATURE SPECIFICATIONS(1)
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range TJ -40 — +125 °C Steady State
Maximum Junction Temperature TJ — — +150 °C Transient
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistance (Note 2)
Thermal Resistance, 3LD SOT-223 JA — 62 — EIA/JEDEC JESD51-7
°C/W
JC — 15 — FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-23A JA — 336 — EIA/JEDEC JESD51-7
°C/W
JC — 110 — FR-4 0.063 4-Layer Board
Thermal Resistance, 3LD SOT-89 JA — 153,3 — EIA/JEDEC JESD51-7
°C/W
JC — 100 — FR-4 0.063 4-Layer Board
Thermal Resistance, 8LD 2x3 DFN JA — 93 — EIA/JEDEC JESD51-7
°C/W
JC — 26 — FR-4 0.063 4-Layer Board
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power
dissipation will cause the device operating junction temperature to exceed the maximum 150°C rating. Sustained
junction temperatures above 150°C can impact the device reliability.
2: Thermal Resistance values are subject to change. Please visit the Microchip web site for the latest packaging
information.

DS22049E-page 4  2010 Microchip Technology Inc.

 MCP1703
2.0 TYPICAL PERFORMANCE CURVES
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.
Note: Junction Temperature (TJ) is approximated by soaking the device under test to an ambient temperature equal to the desired junction
temperature. The test time is small enough such that the rise in Junction temperature over the Ambient temperature is not significant.

6.00 120
VOUT = 1.2V VOUT = 1.2V
Quiescent Current (µA)

IOUT = 0 µA VIN = 2.7V

5.00 100

GND Current (µA)

4.00 +130°C 80
-45°C
3.00 +25°C +90°C 60

2.00 40

1.00 20
0°C
0.00 0
2 4 6 8 10 12 14 16 18 0 40 80 120 160 200
Input Voltage (V) Load Current (mA)

FIGURE 2-1: Quiescent Current vs. Input FIGURE 2-4: Ground Current vs. Load
Voltage. Current.

6.00 120
VOUT = 2.5V VOUT = 5.0V
Quiescent Current (µA)

5.00 IOUT = 0 µA 100 VIN = 6.0V

GND Current (µA)

4.00 +130°C 80

3.00 +90°C 60
VOUT = 2.5V
2.00 40
+25°C VIN = 3.5V
-45°C
1.00 20
0°C
0.00 0
2 4 6 8 10 12 14 16 18 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-2: Quiescent Current vs. Input FIGURE 2-5: Ground Current vs. Load
Voltage. Current.

6.00 3.00
VOUT = 5.0V VOUT = 1.2V IOUT = 0 mA
VOUT = 2.5V
IOUT = 0 µA
Quiescent Current (µA)
Quiescent Current (µA)

5.00 2.50 VIN = 3.5V VIN = 2.7V

0°C 2.00
4.00
+130°C -45°C
1.50
3.00
+25°C 1.00 VOUT = 5.0V
+90°C VIN = 6.0V
2.00 0.50

1.00 0.00
6 8 10 12 14 16 18 -45 -20 5 30 55 80 105 130
Input Voltage (V) Junction Temperature (°C)

FIGURE 2-3: Quiescent Current vs. Input FIGURE 2-6: Quiescent Current vs.
Voltage. Junction Temperature.

 2010 Microchip Technology Inc. DS22049E-page 5

MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.

1.240 1.24
VOUT = 1.2V
ILOAD = 0.1 mA
1.230 1.23 0°C +25°C
-45°C
Output Voltage (V)

Output Voltage (V)

-45°C
1.220 0°C 1.22
+90°C
1.210 1.21
+130°C +130°C
1.200 +90°C
1.20
+25°C VIN = 3.0V
1.190 1.19
VOUT = 1.2V
1.180 1.18
2 4 6 8 10 12 14 16 18 0 20 40 60 80 100 120 140 160 180 200
Input Voltage (V) Load Current (mA)

FIGURE 2-7: Output Voltage vs. Input FIGURE 2-10: Output Voltage vs. Load
Voltage. Current.

2.58 2.54
VOUT = 2.5V VIN = 3.5V
2.56 ILOAD = 0.1 mA 2.53 VOUT = 2.5V
Output Voltage (V)

Output Voltage (V)

2.52 +90°C +25°C
2.54 +90°C
+130°C 2.51
2.52
2.50
2.50
2.49
2.48 0°C -45°C 2.48 0°C +130°C
+25°C
2.46 -45°C
2.47
2.44 2.46
2 4 6 8 10 12 14 16 18 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-8: Output Voltage vs. Input FIGURE 2-11: Output Voltage vs. Load
Voltage. Current.

5.16 5.06
VOUT = 5.0V VIN = 6V
5.12 ILOAD = 0.1 mA 5.04 +90°C VOUT = 5.0V
+130°C
Output Voltage (V)
Output Voltage (V)

5.08 5.02
+130°C +90°C
5.04 5.00
5.00 4.98
0°C -45°C 0°C
4.96 4.96 -45°C
+25°C +25°C
4.92 4.94
4.88 4.92
6 8 10 12 14 16 18 0 50 100 150 200 250
Input Voltage (V) Load Current (mA)

FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load
Voltage. Current.

DS22049E-page 6  2010 Microchip Technology Inc.

 MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.

1.00 VOUT = 2.5V

0.90
0.80 +130°C
Dropout Voltage (V)

0.70 +90°C
0.60
+25°C
0.50
0.40 +0°C
0.30 -45°C
0.20
0.10
0.00
0 25 50 75 100 125 150 175 200 225 250
Load Current (mA)

FIGURE 2-13: Dropout Voltage vs. Load FIGURE 2-16: Dynamic Line Response.
Current.

0.50 900
VOUT = 5.0V VOUT = 2.5V
0.45

Short Circuit Current (mA)

800
ROUT < 0.1?
0.40
Dropout Voltage (V)

+130°C 700
0.35 +90°C 600
0.30
+25°C 500
0.25
400
0.20
0.15 300
+0°C
0.10 200
-45°C
0.05 100
0.00 0
0 25 50 75 100 125 150 175 200 225 250 2 4 6 8 10 12 14 16 18
Load Current (mA) Input Voltage (V)

FIGURE 2-14: Dropout Voltage vs. Load FIGURE 2-17: Short Circuit Current vs.
Current. Input Voltage.

1.00
VIN = 6V VOUT = 1.2V
0.90 IOUT = 1 mA to 200 mA
Load Regulation (%)

0.80 VIN = 12V

0.70
0.60
0.50
VIN = 16V
0.40 VIN = 14V
VIN = 3.8V
0.30
VIN = 3.2V
0.20
-45 -20 5 30 55 80 105 130
Temperature (°C)

FIGURE 2-15: Dynamic Line Response. FIGURE 2-18: Load Regulation vs.
Temperature.

 2010 Microchip Technology Inc. DS22049E-page 7

MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.

1.20 0.20
VOUT = 2.5V VOUT = 2.5V
1.00 IOUT = 1 mA to 250 mA VIN = 3.5V to 16V

Line Regulation (%/V)

VIN = 16V
Load Regulation (%)

0.16
0.80 200 mA 250 mA
0.60 VIN = 6V 0.12
0.40
0.20 0.08
VIN = 3.5V 100 mA
0.00
VIN = 12V 0.04 0 mA
-0.20
VIN = 14V
-0.40 0.00
-45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130
Temperature (°C) Temperature (°C)

FIGURE 2-19: Load Regulation vs. FIGURE 2-22: Line Regulation vs.
Temperature. Temperature.

1.00 0.18
VOUT = 5.0V VOUT = 5.0V
0.80 VIN = 16V IOUT = 1 to 250 mA 0.16 VIN = 6.0V to 16.0V

Line Regulation (%/V)

Load Regulation (%)

0.60 VIN = 6V
0.14 200mA
0.40 VIN = 12V
250 mA
0.12
0.20
0.00
VIN = 8V 0.10
0 mA
100 mA
-0.20 0.08
VIN = 14V
-0.40 0.06
-45 -20 5 30 55 80 105 130 -45 -20 5 30 55 80 105 130
Temperature (°C) Temperature (°C)

FIGURE 2-20: Load Regulation vs. FIGURE 2-23: Line Regulation vs.
Temperature. Temperature.

0.16 0
VIN = 3.0 to 16.0V
0.14 VOUT = 1.2V -10
Line Regulation (%/V)

0.12 -20
0.10 -30
PSRR (dB)

200 mA 1 mA
0.08 -40

0.06 -50 VR=1.2V

0 mA -60 VIN=2.7V
0.04 100 mA VINAC = 100 mV p-p
-70 CIN=0 μF
0.02
-80 IOUT=100 µA
0.00
-90
-45 -20 5 30 55 80 105 130
0.01 0.1 1 10 100 1000
Temperature (°C) Frequency (kHz)

FIGURE 2-21: Line Regulation vs. FIGURE 2-24: PSRR vs. Frequency.
Temperature.

DS22049E-page 8  2010 Microchip Technology Inc.

 MCP1703
Note: Unless otherwise indicated: VR = 1.8V, COUT = 1 µF Ceramic (X7R), CIN = 1 µF Ceramic (X7R), IL = 100 µA,
TA = +25°C, VIN = VOUT(MAX) + VDROPOUT(MAX) or 2.7V, whichever is greater.

0
-10
-20
-30
PSRR (dB)

-40
VR=5.0V
-50
VIN=6.0V
-60 VINAC = 100 mV p-p
-70 CIN=0 μF
IOUT=100 µA
-80
-90
0.01 0.1 1 10 100 1000
Frequency (KHz)

FIGURE 2-25: PSRR vs. Frequency. FIGURE 2-28: Dynamic Load Response.

100
VR=5.0V, VIN=6.0V IOUT=50 mA

10
Noise (µV/ Hz)

VR=2.8V, VIN=3.8V
1

0.1 VR=1.2V, VIN=2.7V

0.01

0.001
0.01 0.1 1 10 100 1000
Frequency (kHz)

FIGURE 2-26: Output Noise vs. Frequency. FIGURE 2-29: Dynamic Load Response.

FIGURE 2-27: Power Up Timing.

 2010 Microchip Technology Inc. DS22049E-page 9

MCP1703
3.0 PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: MCP1703 PIN FUNCTION TABLE

Pin No. Pin No. Pin No. Pin No.
Name Function
2x3 DFN-8 SOT-223-3 SOT-23A SOT-89-3
4 2,Tab 1 1 GND Ground Terminal
1 3 2 3 VOUT Regulated Voltage Output
8 1 3 2,Tab VIN Unregulated Supply Voltage
2, 3, 5, 6, 7 — — — NC No Connection
9 — — — EP Exposed Thermal Pad (EP); must be
connected to VSS.

3.1 Ground Terminal (GND) 3.3 Unregulated Input Voltage (VIN)

Regulator ground. Tie GND to the negative side of the Connect VIN to the input unregulated source voltage.
output and the negative side of the input capacitor. Like all low dropout linear regulators, low source
Only the LDO bias current (2.0 µA typical) flows out of impedance is necessary for the stable operation of the
this pin; there is no high current. The LDO output LDO. The amount of capacitance required to ensure
regulation is referenced to this pin. Minimize voltage low source impedance will depend on the proximity of
drops between this pin and the negative side of the the input source capacitors or battery type. For most
load. applications, 1 µF of capacitance will ensure stable
operation of the LDO circuit. For applications that have
3.2 Regulated Output Voltage (VOUT) load currents below 100 mA, the input capacitance
requirement can be lowered. The type of capacitor
Connect VOUT to the positive side of the load and the used can be ceramic, tantalum, or aluminum
positive terminal of the output capacitor. The positive electrolytic. The low ESR characteristics of the ceramic
side of the output capacitor should be physically will yield better noise and PSRR performance at
located as close to the LDO VOUT pin as is practical. high-frequency.
The current flowing out of this pin is equal to the DC
load current. 3.4 Exposed Thermal Pad (EP)
There is an internal electrical connection between the
Exposed Thermal Pad (EP) and the VSS pin; they must
be connected to the same potential on the Printed
Circuit Board (PCB).

DS22049E-page 10  2010 Microchip Technology Inc.

 MCP1703
4.0 DETAILED DESCRIPTION

4.1 Output Regulation 4.3 Overtemperature

A portion of the LDO output voltage is fed back to the The internal power dissipation within the LDO is a
internal error amplifier and compared with the precision function of input-to-output voltage differential and load
internal band gap reference. The error amplifier output current. If the power dissipation within the LDO is
will adjust the amount of current that flows through the excessive, the internal junction temperature will rise
P-Channel pass transistor, thus regulating the output above the typical shutdown threshold of 150°C. At that
voltage to the desired value. Any changes in input point, the LDO will shut down and begin to cool to the
voltage or output current will cause the error amplifier typical turn-on junction temperature of 130°C. If the
to respond and adjust the output voltage to the target power dissipation is low enough, the device will
voltage (refer to Figure 4-1). continue to cool and operate normally. If the power
dissipation remains high, the thermal shutdown
4.2 Overcurrent protection circuitry will again turn off the LDO,
protecting it from catastrophic failure.
The MCP1703 internal circuitry monitors the amount of
current flowing through the P-Channel pass transistor.
In the event of a short-circuit or excessive output
current, the MCP1703 will turn off the P-Channel
device for a short period, after which the LDO will
attempt to restart. If the excessive current remains, the
cycle will repeat itself.

MCP1703

VIN VOUT

Error Amplifier
+VIN
Voltage
-
Reference
+

Overcurrent
Overtemperature

GND

FIGURE 4-1: Block Diagram.

 2010 Microchip Technology Inc. DS22049E-page 11

MCP1703
5.0 FUNCTIONAL DESCRIPTION 5.2 Output
The MCP1703 CMOS low dropout linear regulator is The maximum rated continuous output current for the
intended for applications that need the lowest current MCP1703 is 250 mA (VR  2.5V). For applications
consumption while maintaining output voltage where VR < 2.5V, the maximum output current is
regulation. The operating continuous load range of the 200 mA.
MCP1703 is from 0 mA to 250 mA (VR  2.5V). The A minimum output capacitance of 1.0 µF is required for
input operating voltage range is from 2.7V to 16.0V, small signal stability in applications that have up to
making it capable of operating from two or more 250 mA output current capability. The capacitor type
alkaline cells or single and multiple Li-Ion cell batteries. can be ceramic, tantalum, or aluminum electrolytic. The
esr range on the output capacitor can range from 0 to
5.1 Input 2.0.
The input of the MCP1703 is connected to the source The output capacitor range for ceramic capacitors is
of the P-Channel PMOS pass transistor. As with all 1 µF to 22 µF. Higher output capacitance values may
LDO circuits, a relatively low source impedance (10) be used for tantalum and electrolytic capacitors. Higher
is needed to prevent the input impedance from causing output capacitor values pull the pole of the LDO
the LDO to become unstable. The size and type of the transfer function inward that results in higher phase
capacitor needed depends heavily on the input source shifts which in turn cause a lower crossover frequency.
type (battery, power supply) and the output current The circuit designer should verify the stability by
range of the application. For most applications (up to applying line step and load step testing to their system
100 mA), a 1 µF ceramic capacitor will be sufficient to when using capacitance values greater than 22 µF.
ensure circuit stability. Larger values can be used to
improve circuit AC performance. 5.3 Output Rise time
When powering up the internal reference output, the
typical output rise time of 1000 µs is controlled to
prevent overshoot of the output voltage.

DS22049E-page 12  2010 Microchip Technology Inc.

 MCP1703
6.0 APPLICATION CIRCUITS & EQUATION 6-2:
ISSUES T J  MAX  = P TOTAL  R JA + T AMAX

Where:
6.1 Typical Application
TJ(MAX) = Maximum continuous junction
The MCP1703 is most commonly used as a voltage temperature
regulator. Its low quiescent current and low dropout
voltage make it ideal for many battery-powered PTOTAL = Total device power dissipation
applications. RJA = Thermal resistance from
junction-to-ambient
TAMAX = Maximum ambient temperature
MCP1703
VIN
VOUT GND 2.7V to 4.8V The maximum power dissipation capability for a
VIN package can be calculated given the junction-to-
1.8V CIN
VOUT ambient thermal resistance and the maximum ambient
IOUT 1 µF Ceramic
COUT temperature for the application. The following equation
50 mA can be used to determine the package maximum
1 µF Ceramic
internal power dissipation.
FIGURE 6-1: Typical Application Circuit.
EQUATION 6-3:
6.1.1 APPLICATION INPUT CONDITIONS  T J  MAX  – T A  MAX  
P D  MAX  = ---------------------------------------------------
Package Type = SOT-23A R JA
Input Voltage Range = 2.7V to 4.8V Where:
VIN maximum = 4.8V
PD(MAX) = Maximum device power dissipation
VOUT typical = 1.8V
TJ(MAX) = Maximum continuous junction
IOUT = 50 mA maximum temperature
TA(MAX) = Maximum ambient temperature
6.2 Power Calculations RJA = Thermal resistance from
junction-to-ambient
6.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1703 is a
function of input voltage, output voltage and output EQUATION 6-4:
current. The power dissipation, as a result of the
quiescent current draw, is so low, it is insignificant T J  RISE  = P D  MAX   R JA
(2.0 µA x VIN). The following equation can be used to Where:
calculate the internal power dissipation of the LDO.
TJ(RISE) = Rise in device junction temperature
EQUATION 6-1: over the ambient temperature

P LDO =  VIN  MAX   – V OUT  MIN    I OUT  MAX   PTOTAL = Maximum device power dissipation
RJA = Thermal resistance from junction to
Where:
ambient
PLDO = LDO Pass device internal power
dissipation
VIN(MAX) = Maximum input voltage EQUATION 6-5:
VOUT(MIN) = LDO minimum output voltage T J = T J  RISE  + T A
Where:
The maximum continuous operating junction
temperature specified for the MCP1703 is +125°C. To TJ = Junction Temperature
estimate the internal junction temperature of the TJ(RISE) = Rise in device junction temperature
MCP1703, the total internal power dissipation is over the ambient temperature
multiplied by the thermal resistance from junction to TA = Ambient temperature
ambient (RJA). The thermal resistance from junction to
ambient for the SOT-23A pin package is estimated at
336°C/W.

 2010 Microchip Technology Inc. DS22049E-page 13

MCP1703
6.3 Voltage Regulator Junction Temperature Estimate
Internal power dissipation, junction temperature rise, To estimate the internal junction temperature, the
junction temperature and maximum power dissipation calculated temperature rise is added to the ambient or
are calculated in the following example. The power offset temperature. For this example, the worst-case
dissipation, as a result of ground current, is small junction temperature is estimated below.
enough to be neglected.
TJ = TJRISE + TA(MAX)
6.3.1 POWER DISSIPATION EXAMPLE
TJ = 91.3°C
Package Maximum Package Power Dissipation at +40°C
Package Type: SOT-23A Ambient Temperature Assuming Minimal Copper
Usage.
Input Voltage:
VIN = 2.7V to 4.8V SOT-23A (336.0°C/Watt = RJA)
LDO Output Voltages and Currents PD(MAX) = (+125°C - 40°C) / 336°C/W
VOUT = 1.8V PD(MAX) = 253 milli-Watts
IOUT = 50 mA SOT-89 (153.3°C/Watt = RJA)
Maximum Ambient Temperature PD(MAX) = (+125°C - 40°C) / 153.3°C/W
TA(MAX) = +40°C PD(MAX) = 0.554 Watts
Internal Power Dissipation SOT-223 (62.9°C/Watt = RJA)
Internal Power dissipation is the product of the LDO PD(MAX) = (+125°C - 40°C) / 62.9°C/W
output current times the voltage across the LDO
PD(MAX) = 1.35 Watts
(VIN to VOUT).
PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) 6.4 Voltage Reference
PLDO = (4.8V - (0.97 x 1.8V)) x 50 mA
The MCP1703 can be used not only as a regulator, but
PLDO = 152.7 milli-Watts also as a low quiescent current voltage reference. In
many microcontroller applications, the initial accuracy
Device Junction Temperature Rise of the reference can be calibrated using production test
equipment or by using a ratio measurement. When the
The internal junction temperature rise is a function of initial accuracy is calibrated, the thermal stability and
internal power dissipation and the thermal resistance line regulation tolerance are the only errors introduced
from junction to ambient for the application. The by the MCP1703 LDO. The low-cost, low quiescent
thermal resistance from junction to ambient (RJA) is current and small ceramic output capacitor are all
derived from an EIA/JEDEC standard for measuring advantages when using the MCP1703 as a voltage
thermal resistance for small surface mount packages. reference.
The EIA/JEDEC specification is JESD51-7, “High
Effective Thermal Conductivity Test Board for Leaded
Surface Mount Packages”. The standard describes the Ratio Metric Reference
test method and board specifications for measuring the
MCP1703 PIC®
thermal resistance from junction to ambient. The actual 2 µA Bias Microcontroller
thermal resistance for a particular application can vary VIN
CIN VOUT VREF
depending on many factors, such as copper area and 1 µF COUT
thickness. Refer to AN792, “A Method to Determine GND
1 µF
How Much Power a SOT23 Can Dissipate in an ADO
Application”, (DS00792), for more information AD1
regarding this subject.

Bridge Sensor
TJ(RISE) = PTOTAL x RqJA
TJRISE = 152.7 milli-Watts x 336.0°C/Watt
TJRISE = 51.3°C FIGURE 6-2: Using the MCP1703 as a
Voltage Reference.

DS22049E-page 14  2010 Microchip Technology Inc.

 MCP1703
6.5 Pulsed Load Applications
For some applications, there are pulsed load current
events that may exceed the specified 250 mA
maximum specification of the MCP1703. The internal
current limit of the MCP1703 will prevent high peak
load demands from causing non-recoverable damage.
The 250 mA rating is a maximum average continuous
rating. As long as the average current does not exceed
250 mA, pulsed higher load currents can be applied to
the MCP1703. The typical current limit for the
MCP1703 is 500 mA (TA +25°C).

 2010 Microchip Technology Inc. DS22049E-page 15

MCP1703
7.0 PACKAGING INFORMATION

7.1 Package Marking Information

3-Pin SOT-23A Example:

Standard Options for SOT-23A and SOT-89

Extended Temp
XXNN Symbol Voltage * Symbol Voltage *
HWNN
HM 1.2 HT 3.0
HP 1.5 HU 3.3
3-Lead SOT-89 HQ 1.8 HV 4.0 Example:
HR 2.5 HW 5.0
HS 2.8 — —
* Custom output voltages available upon request. Contact
XXXYYWW your local Microchip sales office for more information.
HM1014
NNN 256
Standard Options for SOT-223
Extended Temp
Symbol Voltage * Symbol Voltage *
3-Lead SOT-223 12 1.2 30 3.0 Example:
15 1.5 33 3.3 Tab is GND
Tab is GND
18 1.8 40 4.0
25 2.5 50 5.0
XXXXXXX MCP1703
XXXYYWW 28 2.8 — — 15E1014
NNN * Custom output voltages available upon request. Contact 256
your local Microchip sales office for more information.
1 2 3
Standard Options for 8-Lead DFN (2 x 3)
8-Lead DFN (2 x 3) Extended Temp Example:
Symbol Voltage * Symbol Voltage *
XXX AAU 1.2 AAY 3.3 AAU
YWW AAV 1.8 AFR 4.0 014
NN AAW 2.5 AAZ 5.0 25
AAT 3.0 — —
* Custom output voltages available upon request. Contact
your local Microchip sales office for more information.

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanumeric traceability code
e3 Pb-free JEDEC designator for Matte Tin (Sn)
* This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.

DS22049E-page 16  2010 Microchip Technology Inc.

 MCP1703

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 2010 Microchip Technology Inc. DS22049E-page 17

MCP1703

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
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DS22049E-page 18  2010 Microchip Technology Inc.

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 2010 Microchip Technology Inc. DS22049E-page 19

MCP1703

Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging

DS22049E-page 20  2010 Microchip Technology Inc.

 MCP1703

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DS22049E-page 22  2010 Microchip Technology Inc.

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 2010 Microchip Technology Inc. DS22049E-page 23

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DS22049E-page 24  2010 Microchip Technology Inc.

 MCP1703
APPENDIX A: REVISION HISTORY

Revision E (November 2010)

The following is the list of modifications:
1. Updated the Thermal Resistance Typical value
for the SOT-89 package in the Junction
Temperature Estimate section.

Revision D (September 2009)

The following is the list of modifications:
1. Added the 8-Lead 2x3 DFN package.
2. Updated the Temperature Specification table.
3. Updated Table 3-1.
4. Added Section 3.4 “Exposed Thermal Pad
(EP)”.
5. Updated the Package Outline Drawings and the
information for the 8-Lead 2x3 DFN package.
6. Added the information for the 8-Lead 2x3 DFN
package in the Product Identification System
section.

Revision C (June 2009)

The following is the list of modifications:
1. Absolute Maximum Ratings: Updated this
section.
2. DC Characteristics table: Updated.
3. Temperature Specifications table: Updated.
4. Package Information: Update Package Outline
Drawings.

Revision B (February 2008)

The following is the list of modifications:
1. Updated Temperature Specifications table.
2. Updated Table 3-1.
3. Updated Section 5.2 “Output”.
4. Added SOT-223 Landing Pattern Outline
drawing.

Revision A (June 2007)

• Original Release of this Document.

 2010 Microchip Technology Inc. DS22049E-page 25

MCP1703
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

PART NO. X- XX X X X/ XX Examples:

a) MCP1703T-1202E/XX: 1.2V Low Quiescent
Device Tape Output Feature Tolerance Temp. Package LDO, Tape and Reel
and Reel Voltage Code b) MCP1703T-1502E/XX: 1.5V Low Quiescent
LDO, Tape and Reel
c) MCP1703T-1802E/XX: 1.8V Low Quiescent
Device: MCP1703: 250 mA, 16V Low Quiescent Current LDO LDO, Tape and Reel
d) MCP1703T-2502E/XX: 2.5V Low Quiescent
LDO, Tape and Reel
Tape and Reel: T = Tape and Reel e) MCP1703T-2802E/XX: 2.8V Low Quiescent
LDO, Tape and Reel
f) MCP1703T-3002E/XX: 3.0V Low Quiescent
Output Voltage *: 12 = 1.2V “Standard” LDO, Tape and Reel
15 = 1.5V “Standard” g) MCP1703T-3302E/XX: 3.3V Low Quiescent
18 = 1.8V “Standard” LDO, Tape and Reel
25 = 2.5V “Standard” h) MCP1703T-3602E/XX: 3.6V Low Quiescent
28 = 2.8V “Standard” LDO, Tape and Reel
30 = 3.0V “Standard” i) MCP1703T-4002E/XX: 4.0V Low Quiescent
33 = 3.3V “Standard” LDO, Tape and Reel
40 = 4.0V “Standard”
j) MCP1703T-5002E/XX: 5.0V Low Quiescent
50 = 5.0V “Standard”
LDO, Tape and Reel
*Contact factory for other output voltage options.

Extra Feature 0 = Fixed XX = CB for 3LD SOT-23A package

Code: = DB for 3LD SOT-223 package
= MB for 3LD SOT-89 package
Tolerance: 2 = 2.0% (Standard) = MC for 8LD DFN package.

Temperature: E = -40C to +125C

Package Type: CB = Plastic Small Outline Transistor (SOT-23A) 3-lead,

DB = Plastic Small Outline Transistor (SOT-223) 3-lead,
MB = Plastic Small Outline Transistor (SOT-89) 3-lead.
MC = Plastic Dual Flat, No Lead Package (DFN) 2x3, 8-lead.

DS22049E-page 26  2010 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:
• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device Trademarks

applications and the like is provided only for your convenience
The Microchip name and logo, the Microchip logo, dsPIC,
and may be superseded by updates. It is your responsibility to
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART,
ensure that your application meets with your specifications.
PIC32 logo, rfPIC and UNI/O are registered trademarks of
MICROCHIP MAKES NO REPRESENTATIONS OR
Microchip Technology Incorporated in the U.S.A. and other
WARRANTIES OF ANY KIND WHETHER EXPRESS OR countries.
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION, FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
INCLUDING BUT NOT LIMITED TO ITS CONDITION, MXDEV, MXLAB, SEEVAL and The Embedded Control
QUALITY, PERFORMANCE, MERCHANTABILITY OR Solutions Company are registered trademarks of Microchip
FITNESS FOR PURPOSE. Microchip disclaims all liability Technology Incorporated in the U.S.A.
arising from this information and its use. Use of Microchip Analog-for-the-Digital Age, Application Maestro, CodeGuard,
devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN,
the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial
hold harmless Microchip from any and all damages, claims, Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified
suits, or expenses resulting from such use. No licenses are logo, MPLIB, MPLINK, mTouch, Omniscient Code
conveyed, implicitly or otherwise, under any Microchip Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit,
intellectual property rights. PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance,
TSHARC, UniWinDriver, WiperLock and ZENA are
trademarks of Microchip Technology Incorporated in the
U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2010, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.

ISBN: 978-1-60932-689-0

Microchip received ISO/TS-16949:2002 certification for its worldwide

headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.

 2010 Microchip Technology Inc. DS22049E-page 27

 Worldwide Sales and Service
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Fax: 480-792-7277 Hong Kong Tel: 45-4450-2828
Tel: 91-11-4160-8631
Technical Support: Tel: 852-2401-1200 Fax: 45-4485-2829
Fax: 91-11-4160-8632
http://support.microchip.com Fax: 852-2401-3431
India - Pune France - Paris
Web Address:
Australia - Sydney Tel: 91-20-2566-1512 Tel: 33-1-69-53-63-20
www.microchip.com
Tel: 61-2-9868-6733 Fax: 91-20-2566-1513 Fax: 33-1-69-30-90-79
Atlanta Fax: 61-2-9868-6755
Japan - Yokohama Germany - Munich
Duluth, GA
China - Beijing Tel: 81-45-471- 6166
Tel: 49-89-627-144-0
Tel: 678-957-9614
Tel: 86-10-8528-2100 Fax: 49-89-627-144-44
Fax: 678-957-1455 Fax: 81-45-471-6122
Fax: 86-10-8528-2104 Italy - Milan
Boston Korea - Daegu
China - Chengdu Tel: 82-53-744-4301
Tel: 39-0331-742611
Westborough, MA
Tel: 86-28-8665-5511 Fax: 39-0331-466781
Tel: 774-760-0087 Fax: 82-53-744-4302
Fax: 86-28-8665-7889 Netherlands - Drunen
Fax: 774-760-0088 Korea - Seoul
China - Chongqing Tel: 82-2-554-7200 Tel: 31-416-690399
Chicago
Tel: 86-23-8980-9588 Fax: 82-2-558-5932 or Fax: 31-416-690340
Itasca, IL
Tel: 630-285-0071 Fax: 86-23-8980-9500 82-2-558-5934 Spain - Madrid
Fax: 630-285-0075 China - Hong Kong SAR Tel: 34-91-708-08-90
Malaysia - Kuala Lumpur
Tel: 852-2401-1200 Fax: 34-91-708-08-91
Cleveland Tel: 60-3-6201-9857
Independence, OH Fax: 852-2401-3431 Fax: 60-3-6201-9859 UK - Wokingham
Tel: 216-447-0464 China - Nanjing Tel: 44-118-921-5869
Malaysia - Penang
Fax: 216-447-0643 Tel: 86-25-8473-2460 Fax: 44-118-921-5820
Tel: 60-4-227-8870
Dallas Fax: 86-25-8473-2470 Fax: 60-4-227-4068
Addison, TX China - Qingdao Philippines - Manila
Tel: 972-818-7423 Tel: 86-532-8502-7355 Tel: 63-2-634-9065
Fax: 972-818-2924 Fax: 86-532-8502-7205 Fax: 63-2-634-9069
Detroit China - Shanghai Singapore
Farmington Hills, MI Tel: 86-21-5407-5533 Tel: 65-6334-8870
Tel: 248-538-2250 Fax: 86-21-5407-5066 Fax: 65-6334-8850
Fax: 248-538-2260
China - Shenyang Taiwan - Hsin Chu
Kokomo Tel: 86-24-2334-2829 Tel: 886-3-6578-300
Kokomo, IN Fax: 86-24-2334-2393 Fax: 886-3-6578-370
Tel: 765-864-8360
Fax: 765-864-8387 China - Shenzhen Taiwan - Kaohsiung
Tel: 86-755-8203-2660 Tel: 886-7-213-7830
Los Angeles Fax: 86-755-8203-1760 Fax: 886-7-330-9305
Mission Viejo, CA
Tel: 949-462-9523 China - Wuhan Taiwan - Taipei
Fax: 949-462-9608 Tel: 86-27-5980-5300 Tel: 886-2-2500-6610
Fax: 86-27-5980-5118 Fax: 886-2-2508-0102
Santa Clara
Santa Clara, CA China - Xian Thailand - Bangkok
Tel: 408-961-6444 Tel: 86-29-8833-7252 Tel: 66-2-694-1351
Fax: 408-961-6445 Fax: 86-29-8833-7256 Fax: 66-2-694-1350

Toronto China - Xiamen

Mississauga, Ontario, Tel: 86-592-2388138
Canada Fax: 86-592-2388130
Tel: 905-673-0699 China - Zhuhai
Fax: 905-673-6509 Tel: 86-756-3210040
Fax: 86-756-3210049

08/04/10

DS22049E-page 28  2010 Microchip Technology Inc.