LD5523K

05/16/2018

Multi-Mode PWM Controller of Flyback with

Integrated BNI/BNO and Bulk cap. OVP

REV. 00

General Description Features

 Secondary-side feedback control with
In order to enhance the efficiency performance, the
quasi-resonant + CCM operation
LD5523K integrates the multi-mode PWM controller,
 Low Startup Current (<1A)
which consists of Quasi-Resonant (QR) PWM control for  0.285mA Ultra-low operating current at light load
light load condition and Continue Conduction Mode  Current Mode Control with Cycle-by-Cycle Current
(CCM) for heavy load condition. Moreover, the QR Limit
controller not only gains the system performance, but  Green Mode Control
also brings the worse EMI capability, while the  UVLO (Under Voltage Lockout)
 LEB (Leading-Edge Blanking) on CS Pin
frequency swapping function of LD5523K can reduce
 VCC OVP (Over Voltage Protection)
the EMI emission of SMPS and helps the power circuit
 Adj. OVP / UVP on FB pin
designers to simply deal with EMI filter and saves
 Adj. BNI/BNO, Bulk cap. OVP on FB pin
several component and developing time.  OLP (Over Load Protection)
The LD5523K is implemented in SOT-26 package, and  External OTP (Over Temperature Protection) on
CS Pin
includes the comprehensive protection function, such as
 Internal OTP (Over Temperature Protection)
Over Load Protection (OLP), Over Voltage Protection
 SDSP (Secondary Diode Short Protection)
(OVP), Output Short Circuit Protection (OSCP) and  Gate Source/Sink Capability: 350mA/-355mA @
internal Over Temperature Protection (OTP). output pin with 33nF capacitor.
Furthermore, the programmable brown-in/out and bulk
cap. OVP protection is built-in.
Applications
 Switching AC/DC Adaptor

Typical Application

DC
AC EMI Output
input Filter

VCC

OUT

FB
LD5523K
photocoupler
CS
COMP

GND NTC

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Pin Configuration
DIP-8 (TOP VIEW) SOT-26 (TOP VIEW)

COMP
GND
OUT VCC CS

NC

FB
8 7 6 5

6 5 4
23K
TOP MARK YWt pp
1 2 3
YYWWPP

1 YYWWPP
2 3 4 GND COMP FB
NC
CS
VCC
OUT

YY, Y : Year code (D: 2004, E: 2005…..)

WW, W : Week code
PP : Production code
t23K : LD5523K

Ordering Information
Part number Package TOP MARK Shipping
LD5523K GL SOT-26 (Green Package) YWt/23K 3000 /tape & reel
LD5523K GN DIP-8 (Green Package) LD5523K 3600 /tube /Carton

The LD5523K is RoHs compliant/ green packaged.

Protection Mode
Product Switching Bulk cap
VCC_OVP FB_OVP OSCP OLP BNI/BNO CS_OTP Int. OTP SDSP
Name Freq. OVP

Auto Auto Auto Auto Auto Auto Auto Auto Auto

LD5523K 65kHz
recovery recovery recovery recovery recovery recovery recovery recovery recovery

Pin Descriptions
PIN Pin
NAME FUNCTION
(SOT-26) (DIP-8)
GND 1 8 Ground
COMP 2 7 Output of the error amplifier for voltage compensation
FB 3 5 Auxiliary voltage sense, brown in/out and Quasi Resonant detection

CS 4 4 Current sense pin, connect to sense the MOSFET current

VCC 5 2 Supply voltage pin
OUT 6 1 Gate drive output to drive the external MOSFET
NC 3 Unconnected Pin
NC 6 Unconnected Pin

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Block Diagram
VCC

UVLO OVP
Comparator 28V
internal bias OVP
Comparator
& Vref
16.5V/7V VCC OK

Vref OK
Int. OTP
Protection Driver
PG
Stage OUT

Oscillator

Vbias
Counter S Q
QRD
QRD Time-Out 2
Gate-off
Time-Out 1

COMP RA=2.3R R

RB=1R OCP
Comparator
OLP
Comparator
+ Slope Vcs_limit

Compensation
+
OLP
VOLP
LEB CS

Over Current
Compensation

Detection
BNI/BNO
+ Int. OTP
PDR
-

Bulk Voltage Bulk_OVP

FB Detection VCC_OVP OLP

FB_OVP
Output Voltage
Protection Logic Protection
Detection
FB_UVP

QRD
Detection
QRD

GND

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Absolute Maximum Ratings

Supply Voltage VCC, -0.3V ~ 30V
COMP -0.3V ~ 12V
FB, CS -0.3V ~ 7V
OUT -0.3V ~ VCC+0.3V
Maximum Junction Temperature 150C
Storage Temperature Range -65C ~ 150C
Package Thermal Resistance (SOT-26, θJA) 200C/W
Package Thermal Resistance (DIP-8, θJA) 100C/W
Power Dissipation (SOT-26, at Ambient Temperature = 85C) 200mW
Power Dissipation (DIP-8, at Ambient Temperature = 85C) 400mW
Lead temperature (Soldering, 10sec) 260C
ESD Voltage Protection, Human Body Model 2.5 KV
ESD Voltage Protection, Machine Model 250 V

Caution:
Stress exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stress above recommended operating conditions may affect
device reliability.

Recommended Operating Conditions

Item Min. Max. Unit

Operating Junction Temperature -40 125 C

Supply VCC Voltage 8.0 26.5 V

VCC Capacitor 3.3 10 F

Start-up resistor Value (AC Side, Half Wave) 400K 2M 

Comp Pin Capacitor (X7R type) 330 4700 pF

CS Pin Capacitor Value 47 470 pF

Note:
1. It’s essential to connect VCC pin with a SMD ceramic capacitor (0.1F ~ 0.47F) to
filter out the undesired switching noise for stable operation. This capacitor should be
placed close to IC pin as possible.
2. It’s also essential to connect a capacitor to COMP to filter out the undesired switching
noise for stable operation.
3. The small signal components should be placed close to IC pin as possible.

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Electrical Characteristics
o
(TA = +25 C unless otherwise stated, VCC=15.0V)
PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNITS
Supply Voltage (VCC Pin)
Startup Current ICC_ST 1 A
VCOMP=0V, OUT=1nF ICC_OP1 0.285 mA
VCOMP=1.7V, OUT=1nF
ICC_OP2 2.4 mA
Operating Current IFB=200A
(with 1nF load on OUT pin) Auto current protection ICC_OPA1 0.6 mA
Brown in (Before the first
ICC_OPA3 0.7 1.1 1.5 mA
pulse)/ Brown out
UVLO(OFF) VCC_OFF 6 7 8 V
UVLO(ON) VCC_ON 15.5 16.5 17.5 V
VCC OVP Level VCC_OVP 27 28 29 V
VCC OVP de-bounce time TVCC_OVP 8 Cycle
Voltage Feedback (COMP Pin)
Short Circuit Current VCOMP=0V ICOMP 0.116 mA
(1)
Open Loop Voltage VCOMP_OPEN 3.15 V
Min. OCP Compensation
A
(1)
IFB =100A IOCP_MIN 71
Current
Max. OCP Compensation
IFB =300A IOCP_MAX 200 225 250 A
Current
Current Sensing (CS Pin)
Maximum Input Voltage VCS_LIMIT 0.48 0.5 0.52 V
Leading Edge Blanking Time TLEB 275 ns
*ton>3s to DMAX.
Internal Slope Compensation (1)
VSLP_L 165 mV
(Linearly increase),
(1)
Delay to Output TPD 80 ns
BNO Protection (FB Pin)
Brown In Trip Level IBNI 90 95 100 A
BNO Hysteresis IBNO_HYS 7 A
Brown Out De-bounce Time VCOMP=1.7V TDB_BNO 75 ms
Bulk Cap OVP IBULK_OVP 370 A
Bulk Cap OVP delay TFB_BOVP 450 ms

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PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNITS

QRD (Quasi Resonant Detection, FB Pin)
FB OVP Trip voltage Level VFB_OVP 3.3 3.5 3.7 V
FB OVP De-bounce Time TFB_OVP 8 Cycle
(1)
FB UVP Trip voltage Level VFB_UVP 0.8 V
A
(1)
QRD Trip Level IQRD 20
OTP (Over Temperature, CS Pin)
CS OTP Level VCS_LIMIT VCS_OTP 0.48 0.5 0.52 V
(1) TCS_OTP 5.4
CS OTP de-bounce time ms
Oscillator for Switching Frequency
CCM Frequency FCCM 60 65 70 kHz
(1)
Frequency Swapping FSW_MOD ±8 %
Green Mode Frequency FSW_GREEN 21 24 27 kHz
(1)
Temp. Stability FSW_TS 3 5 %
(1)
Voltage Stability VCC =9V~24V FSW_VS 1 %
(1)
Maximum Duty DMAX 81 %
Gate Drive Output (OUT Pin)
(1)
Output Low Level VCC =15V, Io=20mA VOL 1 V
Output High Level VCC =15V, Io=20mA VOH 9 14 V
Rising Time VCC =15V CL=1000pF Tr 280 ns
Falling Time VCC =15V CL =1000pF Tf 30 ns
Output High Clamp Level VCC =18V VO_CLAMP 11.5 V
Soft Start
VCS_OFF from 0.2V to
Soft Start Time (1) TSS 7 ms
0.5V
SDSP (Secondary Diode Short Protection)
SDSP CS Pin Level Secondary diode short VCS_SDSP 1.3 V
(1)
De-bounce Cycle TD_SDSP 4 Cycle
Open Loop Protection
OLP Trip Level VOLP 2.8 V
OLP delay time After soft-start TD_OLP 88 ms

On Chip OTP (Over Temperature Protection)

C
(1,2)
OTP Level TINOTP 140
C
(1,2)
OTP Hysteresis TINOTP_HYS 12

Notes:
1. Guaranteed by design.
2. The threshold temperature for enabling the output again and resetting the latch after OTP has been activated.

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Typical Performance Characteristics

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further to deliver the gate drive signal, the supply current
Application Information
is provided from the auxiliary winding of the transformer.
Operation Overview
Lower startup current requirement on the PWM controller
The LD5523K is built in the multi-mode PWM controller, in
will help to increase the value of R1 and then reduce the
which operates a constant frequency to achieve the CCM
power consumption on R1. By using CMOS process and
as heavy load. For demanding higher power efficiency
the special circuit design, the maximum startup current of
and power-saving in light load condition, the LD5523K
LD5523K is only 1A. If a higher resistance value of R1 is
implements QR function to allow the valley switching and
chosen, it usually takes more time to start up. To select
accomplish zero voltage switching (ZVS). Under different
the value of R1 and C1 carefully will optimize the power
load conditions, LD5523K provides the different solutions
consumption and startup time.
for achieving higher efficiency and performance.

Under Voltage Lockout (UVLO)

AC EMI
input Filter
An UVLO comparator is implemented in it to detect the
voltage on the VCC pin. It would assure the supply Cbulk
D1
voltage enough to turn on the LD5523K PWM controllers
R1
and further to drive the power MOSFET. As shown in Fig. C1
9, a hysteresis is built in to prevent the shutdown from the
VCC
voltage dip during startup. The turn-on and turn-off OUT

threshold level are set at 16.5V and 7V, respectively.

LD5523K
Vcc CS

GND
UVLO(on)

UVLO(off)

Fig. 10
t

I(Vcc) QR Mode Detection

operating current (~ mA)

The transformer will be demagnetized after the main

startup current
power MOSFET turns off. A quasi resonant signal will be
(~µA)
detected from auxiliary winding by FB pin through the
t
external resister.
Fig. 9
As soon as the current of the secondary side diode is
Startup Current and Startup Circuit down to zero during MOSFET-off period, the transformer’s
The typical startup circuit to generate the LD5523K VCC core is demagnetized completely. VDS of MOSFET will
is shown in Fig. 10. During the startup transient, the VCC resonate in discontinuous current mode. The resonance
is lower than the UVLO threshold thus there is no gate frequency (FQR) will be obtained as below.
pulse produced from LD5523K to drive power MOSFET. 1
FQR  (Hz )
Therefore, the current through R1 will provide the startup
2 Lm  CR
current and to charge the capacitor C1. Whenever the
LM  Inductance of primary winding
VCC voltage is high enough to turn on the LD5523K and
CR  Resonance equivalent parasitic capacitance

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If VDS voltage falls to resonant valley level from max FSW
Max. frequency depends on LM
plateau value, the QRD comparator will be tripped while
FB pin current is close to 20A.
65kHz
However, the QR detection will be influenced by
propagation delay. If inductance of primary winding is less
than 500H, there is no valley detection in Vds (as shown Green Mode + QR PWM/CCM
in Fig. 11).
24kHz
Vaux. VCOMP
0.5V 0.6V 1.1V 1.45V
L<500μ
0V H Fig. 12
t
VQRD(IFB=20µA)
Current Sensing, Leading Edge Blanking
The typical current mode of PWM controller feedbacks
both current signal and voltage signal to close the control
TPD loop and achieve regulation. The LD5523K detect the
TPD primary MOSFET current from the CS pin, which is not
only for the peak current mode control but also for the

Fig. 11 pulse-by-pulse current limit. The maximum voltage

threshold of the current sensing pin sets at 0.5V. From
Voltage Feedback Loop above, the MOSFET peak current can be obtained from
The voltage feedback signal is provided from the TL431 at below.
the secondary side through the photo-coupler to the 0 .5 V
COMP pin of the LD5523K. Similar to UC3842, the IPEAK(MAX) 
R CS
LD5523K would without voltage offset to feed the voltage
A 275ns leading-edge blanking (LEB) time is included in
divider at the ratio of RA and RB, that is,
the input of CS pin to prevent the false-trigger from the
RB
V (PWMCOMPARATOR)   VCOMP current spike. In the low power application, if the total
RA  RB pulse width of the turn-on spike is less than 275ns and the
A pull-high resistor is embedded internally and therefore negative spike on the CS pin doesn’t exceed -0.3V, it
no external one is required. could remote the R-C filter (as shown in the Fig. 13).
The LD5523K integrates the multi-mode PWM controller, However, the total pulse width of the turn-on spike is
and for enhance the light load efficiency, the comp pin decided by the output power, circuit design and PCB
value corresponding to the frequency is as shown in Fig. layout. It is strongly recommended to adopt a smaller R-C
12. filter (as shown in Fig. 14) for higher power application to
avoid the CS pin being damaged by the negative turn-on
spike.

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CCM Switching Frequency Clamp
According to the QR operation principle, the switching
frequency is inversely proportional to the output power.
Therefore, as the output power increases, the switching
275ns
frequency can become rather low without limiting. The
blanking
VCC time CCM switching frequency of LD5523K is clamped at 65
OUT
kHz internally to provide the optimized operations by
LD5523K considering the EMI performance, thermal treatment,
component sizes and transformer design.
CS
GND
Over Voltage Protection on VCC Pin
(VCC OVP) - Auto Recovery
Can be removed if the negative
spike is not over spec. (-0.3V).
The VGS ratings of the nowadays power MOSFETs are
often limited up to max. 28V. To prevent the VGS from the
Fig. 13
fault condition, LD5523K is implemented with an OVP
function on VCC. Whenever the VCC voltage is higher
than the OVP threshold voltage, the output gate drive
circuit will be shutdown simultaneously thus to stop the
switching of the power MOSFET until the next UVLO(ON).

The VCC OVP function in LD5523K is an auto-recovery

VCC
OUT type protection. The Fig. 15 shows its operation.

On the other hand, if the OVP condition is removed, the

LD5523K
VCC level will get back to normal level and the output will
CS
automatically return to the normal operation.
GND
VCC
OVP Tripped
RC filter is needed whenever the negative
spike is exceed - 0.3 V or the total spike
OVP Level
width is over 275 nS LEB period.

UVLO(on)
Fig. 14 UVLO(off)

t
Output Stage and Maximum Duty
OUT
An output stage of a CMOS buffer, with typical 350mA
driving capability, is incorporated to drive a power
MOSFET directly. The maximum duty of LD5523K is
Switching Non-Switching Switching
limited to 81% avoid detecting QR fail.
t

Fig. 15

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Over Load Protection (OLP) - Auto CS pin. The relationship of compensation current IOCP and
Recovery IFB is expressed by following equation and shown in Fig.
17.
To protect the circuit from damage due to over-load
condition and short or open-loop condition, the LD5523K IOCP  K  IFB
is implemented with smart OLP function. It also features , where K  0.75
auto–recovery function; see Fig. 16 for the waveform. In K is the mirror current ratio of FB pin, and the I OCP follows
case of fault condition, the feedback system will force the to the input voltage. When the VCOMP ramps up to the IOCP
voltage loop toward the saturation and then pull the threshold of 1.5V, the compensation current is added. The
voltage high on COMP pin (VCOMP). When the VCOMP VCOMP hysteresis of IOCP is 0.15V.
ramps up to the OLP threshold of 2.8V and continues over
The compensation current IOCP supplies an offset voltage
OLP delay time, the protection will be activated and then
by external resistor ROCP, which is series between the
turn off the gate output to stop the switching of power
current sensing resistor RS and CS pin. By selecting a
circuit.
proper value of the resistor ROCP in series with the CS pin,
With the protection mechanism, the average input power the amount of compensation can be adjusted.
will be minimized to remain the component temperature
and stress within the safe operating area. IOCP

VCC 225µA

UVLO(on)

UVLO(off)

78.75µA
OLP
UVLO(off)
OLP Reset
t

COMP IFB
OLP delay time 105µA 300µA

2.8V Fig. 17
OLP trip Level
t
Output Short Circuit Protection (OSCP) -
OUT
Auto Recovery

The OSCP function can prevent the damage from output

Switching Non-Switching Switching
short circuit. Once the output is shorted, Vo and V CC drop
t immediately, which always reflects the auxiliary winding
during the gate off region. Therefore, as VFB is lower than
Fig. 16 0.8V during gate off region, then the FB_UVP is triggered,
and skips one cycle. According to the close loop control,
Adjustable Over Current Compensation on
COMP voltage will pull high in the meanwhile. If the
FB Pin
VCOMP pulls higher than 2.8V over 13 ms and Vcc drops
For compensating the differential input current from below 9.6V. At this time, the OSCP protection will be
high/low line conditions on current sensing resistor, triggered and turn off the gate driving.
LD5523K mirrors compensation current IOCP from IFB to

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Line Voltage
Brown-In / Brown-Out Protection (BNI/BNO)
and Bulk Cap OVP - Auto Recovery
The LD5523K integrates the brown in/out and bulk cap t

protections and valley detection into FB pin. The auxiliary

voltage reflects a proportional bulk voltage during the on IFB
time. Fix the internal current at the BNI and BNO, the BNI
level could be set by modulating the FB divided resistors 95µA
85µA
and auxiliary voltage, as shown in Fig. 18. For preventing
Normal Range
the abnormal condition of line voltage to causing damage,
t
BNO function is implemented, while turns off the gate
Vcc
signal after de-bounce time 75ms as BNO occurring, as
shown in Fig. 19. The relationship of input voltage and UVLO(on)
UVLO(off)
BNI/BNO is expressed in following equation.

NP t
VDC _BNI = ∙I ∙ R1
Na BNI OUT

NP
VDC _BNO = ∙I ∙ R1
Na BNO Non-Switching Switching
Non-
Switching
NP
VDC _BULK _OVP = ∙I ∙ R1
Na BULK _OVP
t

, where
Fig. 19
VDC_BNI is predicted BNI DC value of input voltage.
VDC_BNO is predicted BNO DC value of input voltage. Over Voltage Protection on FB Pin (FB OVP)
VDC_BNULK_OVP is predicted BULK OVP DC value of input - Auto Recovery
voltage.
An output overvoltage protection is implemented in the
IBNI is BNI trip current.
LD5523K. The auxiliary winding voltage can be reflected
IBNO is BNO trip current.
from secondary winding, in which the FB pin voltage is
IBULK_OVP is BULK OVP trip current.
proportional to output voltage during the gate off time.
Np is turns ration of primary-side winding.
OVP is worked by sensing the auxiliary voltage via the
Na is turns ration of auxiliary winding.
divided resistors R2, referring to Fig. 18. The equation of
FB OVP is shown as follows.
VCC
Va R1 ∙ VFB _OVP
R1 R2 =
Va − VFB _OVP
LD5523K
FB Na
Va =
V + VF
VFB R2 NS O
GND
VFB_OVP is the FB pin OVP trip voltage level. Va is the
auxiliary winding voltage which reflects from the forward
Fig. 18 voltage VF of Schottky diode and output voltage VO. NS is
turns ration of secondary-side winding.

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If VFB is greater than the FB OVP trip level, the internal The green-mode control is Leadtrend Technology’s own
counter starts counting 8 cycles, and then LD5523K goes property.
to auto-recovery protection mode till the FB OVP status is
Fault Protection
defused.
There are several critical protections integrated in the
Over Temperature Protection on CS Pin (CS
LD5523K to prevent from damage to the power supply.
OTP) - Auto Recovery
Those damages usually come from open or short
LD5523K is implemented over temperature protection on conditions on the pins of LD5523K.
CS pin which senses voltage to determine NTC status
In case under such conditions listed below, the gate
during gate off region. As VCS is greater than 0.5V and
output will turn off immediately to protect the power circuit.
continues for 5.4ms, CS_OTP is triggered, than LD5523K
is in auto recovery mode till the temperature drops to 1. CS pin floating

setting work condition. 2. COMP pin floating

Oscillator and Switching Frequency

The LD5523K is implemented with Frequency Swapping
function which helps the power supply designers to both
optimize EMI performance and lower system cost.

Secondary Diode Short Protection (SDSP) -

Auto Recovery
The method that the LD5523K judges the logic of SDSP is
described briefly as follows. When VCS is higher than
1.3V, it will reduce the frequency first, even the Ton <
LEB+TPD. When the count is up to 4 times, its gate will be
turned-off, shown as Fig. 20.

4 cycle

1.3V

CS

Comp

Fig. 20

Green Mode Operation

By using the green-mode control, the switching frequency
can be reduced under the light load condition. This feature
helps to improve the efficiency in light load conditions.

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Package Information
SOT-26

Dimension in Millimeters Dimensions in Inches

Symbol
Min Max Min Max

A 2.692 3.099 0.106 0.122

B 1.397 1.803 0.055 0.071

C ------- 1.450 ------- 0.057

D 0.300 0.500 0.012 0.020

F 0.95 TYP 0.037 TYP

H 0.080 0.254 0.003 0.010

I 0.050 0.150 0.002 0.006

J 2.600 3.000 0.102 0.118

M 0.300 0.600 0.012 0.024

θ 0° 10° 0° 10°

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Package Information
DIP-8

Dimension in Millimeters Dimensions in Inches

Symbol
Min Max Min Max
A 9.017 10.160 0.355 0.400
B 6.096 7.112 0.240 0.280
C ----- 5.334 ------ 0.210
D 0.356 0.584 0.014 0.023
E 1.143 1.778 0.045 0.070
F 2.337 2.743 0.092 0.108
I 2.921 3.556 0.115 0.140
J 7.366 8.255 0.29 0.325
L 0.381 ------ 0.015 --------

Important Notice
Leadtrend Technology Corp. reserves the right to make changes or corrections to its products at any time without notice. Customers
should verify the datasheets are current and complete before placing order.

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Revision History

REV. Date Change Notice

00 05/16/2018 Original Specification

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