Tps 2044548
Tps 2044548
Tps 2044548
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright 1999, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
GND1 Thermal
Sense
EN1
Current
Driver
Limit
Charge
Pump
†
CS OUT1
UVLO
Power Switch
†
IN1 CS OUT2
Charge
Pump
Current
Driver
Limit
OC2
EN2
Thermal
Sense
OC3
GND2 Thermal
Sense
EN3
Current
Driver
Limit
Charge
Pump
†
CS OUT3
UVLO
Power Switch
†
IN2 CS OUT4
Charge
Pump
Current
Driver
Limit
OC4
EN4
Thermal
Sense
† Current sense
Terminal Functions
TERMINAL
NO. I/O DESCRIPTION
NAME
TPS2044 TPS2054
EN1 3 – I Enable input. logic low turns on power switch, IN1-OUT1.
EN2 4 – I Enable input. Logic low turns on power switch, IN1-OUT2.
EN3 7 – I Enable input. Logic low turns on power switch, IN2-OUT3.
EN4 8 – I Enable input. Logic low turns on power switch, IN2-OUT4.
EN1 – 3 I Enable input. Logic high turns on power switch, IN1-OUT1.
EN2 – 4 I Enable input. Logic high turns on power switch, IN1-OUT2.
EN3 – 7 I Enable input. Logic high turns on power switch, IN2-OUT3.
EN4 – 8 I Enable input. Logic high turns on power switch, IN2-OUT4.
GND1 1 1 Ground.
GND2 5 5 Ground.
IN1 2 2 I Input voltage.
IN2 6 6 I Input voltage.
OC1 16 16 O Overcurrent. Logic output active low, IN1-OUT1
OC2 13 13 O Overcurrent. Logic output active low, IN1-OUT2
OC3 12 12 O Overcurrent. Logic output active low, IN2-OUT3
OC4 9 9 O Overcurrent. Logic output active low, IN2-OUT4
OUT1 15 15 O Power-switch output, IN1-OUT1
OUT2 14 14 O Power-switch output, IN1-OUT2
OUT3 11 11 O Power-switch output, IN2-OUT3
OUT4 10 10 O Power-switch output, IN2-OUT4
detailed description
power switch
The power switch is an N-channel MOSFET with a maximum on-state resistance of 135 mΩ (VI(INx) = 5 V).
Configured as a high-side switch, the power switch prevents current flow from OUTx to INx and INx to OUTx
when disabled. The power switch supplies a minimum of 500 mA per switch.
charge pump
An internal charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate
of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7 V and requires
very little supply current.
driver
The driver controls the gate voltage of the power switch. To limit large current surges and reduce the associated
electromagnetic interference (EMI) produced, the driver incorporates circuitry that controls the rise times and
fall times of the output voltage. The rise and fall times are typically in the 2-ms to 4-ms range.
enable (ENx or ENx)
The logic enable disables the power switch and the bias for the charge pump, driver, and other circuitry to reduce
the supply current to less than 20 µA when a logic high is present on ENx (TPS2044) or a logic low is present
on ENx (TPS2054). A logic zero input on ENx or logic high on ENx restores bias to the drive and control circuits
and turns the power on. The enable input is compatible with both TTL and CMOS logic levels.
overcurrent (OCx)
The OCx open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
current sense
A sense FET monitors the current supplied to the load. The sense FET measures current more efficiently than
conventional resistance methods. When an overload or short circuit is encountered, the current-sense circuitry
sends a control signal to the driver. The driver in turn reduces the gate voltage and drives the power FET into
its saturation region, which switches the output into a constant current mode and holds the current constant
while varying the voltage on the load.
thermal sense
The TPS2044 and TPS2054 implement a dual-threshold thermal trip to allow fully independent operation of the
power distribution switches. In an overcurrent or short-circuit condition the junction temperature rises. When
the die temperature rises to approximately 140°C, the internal thermal sense circuitry checks to determine which
power switch is in an overcurrent condition and turns off that switch, thus isolating the fault without interrupting
operation of the adjacent power switch. Hysteresis is built into the thermal sense, and after the device has cooled
approximately 20 degrees, the switch turns back on. The switch continues to cycle off and on until the fault is
removed. The (OCx) open-drain output is asserted (active low) when overtemperature or overcurrent occurs.
undervoltage lockout
A voltage sense circuit monitors the input voltage. When the input voltage is below approximately 2 V, a control
signal turns off the power switch.
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Input voltage range, VI(INx) (see Note1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
Output voltage range, VO(OUTx) (see Note1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to VI(INx) + 0.3 V
Input voltage range, VI(ENx) or VI(ENx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 6 V
Continuous output current, IO(OUTx) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internally limited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table
Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to 125°C
Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C
Lead temperature soldering 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . 260°C
Electrostatic discharge (ESD) protection: Human body model MIL-STD-883C . . . . . . . . . . . . . . . . . . . . . . 2 kV
Machine model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 kV
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, VI(ENx) = 0 V, VI(ENx) = Hi (unless otherwise noted)
power switch
TPS2044 TPS2054
PARAMETER TEST CONDITIONS† UNIT
MIN TYP MAX MIN TYP MAX
VI(INx) = 5 V, TJ = 25°C,
80 95 80 95
IO = 0.5 A
Static drain-source on-state VI(INx) = 5 V, TJ = 85°C,
90 120 90 120
resistance, 5-V operation IO = 0.5 A
VI(INx) = 5 V, TJ = 125°C,
100 135 100 135 mΩ
IO = 0.5 A
rDS(
DS(on))
VI(INx) = 3.3 V, TJ = 25°C,
85 105 85 105
IO = 0.5 A
Static drain-source on-state VI(INx) = 3.3 V, TJ = 85°C,
100 135 100 135
resistance, 3.3-V operation IO = 0.5 A
VI(INx) = 3.3 V, TJ = 125°C,
115 150 115 150
IO = 0.5 A
VI(INx) = 5.5 V, TJ = 25°C,
2.5 2.5
CL = 1 µF, RL = 10 Ω
tr Rise time
time, output ms
VI(INx) = 2.7 V, TJ = 25°C,
3 3
CL = 1 µF, RL = 10 Ω
VI(INx) = 5.5 V,
TJ = 25°C,
4.4 4.4
CL = 1 µF, RL = 10 Ω
tf Fall time
time, output ms
VI(INx) = 2.7 V, TJ = 25°C,
2.5 2.5
CL = 1 µF, RL = 10 Ω
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
current limit
TPS2044 TPS2054
PARAMETER TEST CONDITIONS† UNIT
MIN TYP MAX MIN TYP MAX
VI(INx) = 5 V, OUT connected to GND,
IOS Short-circuit output current 0.7 0.9 1.1 0.7 0.9 1.1 A
Device enable into short circuit
† Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
electrical characteristics over recommended operating junction temperature range, VI(IN)= 5.5 V,
IO = rated current, VI(ENx) = 0 V, VI(ENx) = Hi (unless otherwise noted) (continued)
supply current
TPS2044 TPS2054
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
TJ = 25°C 0.03 2
Su ly
Supply TPS2044
VI(ENx) = VI(INx) –40°C ≤ TJ ≤ 125°C 20
current,, No Load
µA
low-level on OUTx TJ = 25°C 0.03 2
output
t t VI(EN
I(ENx)) = 0 V TPS2054
–40°C ≤ TJ ≤ 125°C 20
TJ = 25°C 160 200
Su ly
Supply VI(ENx) = 0 V TPS2044
current,, No Load –40°C ≤ TJ ≤ 125°C 200
µA
high-level on OUTx TJ = 25°C 160 200
output
t t VI(EN
I(ENx)) = VI(IN
I(INx)) TPS2054
–40°C ≤ TJ ≤ 125°C 200
Leakage
g
OUTx VI(ENx) = VI(INx) –40°C ≤ TJ ≤ 125°C TPS2044 200
connected µA
current VI(ENx) = 0 V –40°C ≤ TJ ≤ 125°C TPS2054 200
to ground
Reverse VI(EN) = 0 V TPS2044 0.3
IN = high
g
leakage TJ = 25°C µA
impedance VI(EN) = Hi TPS2054 0.3
current
undervoltage lockout
TPS2044 TPS2054
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Low-level input voltage 2 2.5 2 2.5 V
Hysteresis TJ = 25°C 100 100 mV
overcurrent OCx
TPS2044 TPS2054
PARAMETER TEST CONDITIONS UNIT
MIN TYP MAX MIN TYP MAX
Sink current† VO = 5 V 10 10 mA
Output low voltage IO = 5 mA, VOL(OCx) 0.5 0.5 V
Off-state current† VO = 5 V, VO = 3.3 V 1 1 µA
† Specified by design, not production tested.
tr tf
RL CL
VO(OUTx) 90% 90%
10% 10%
TEST CIRCUIT
VOLTAGE WAVEFORMS
VI(EN)
VI(EN)
(5 V/div)
(5 V/div)
VI(IN) = 5 V VI(IN) = 5 V
TA = 25°C VO(OUT) TA = 25°C
VO(OUT)
CL = 0.1 µF (2 V/div) CL = 0.1 µF
(2 V/div)
Figure 2. Turnon Delay and Rise Time Figure 3. Turnoff Delay and Fall Time
with 0.1-µF Load with 0.1-µF Load
VI(EN) VI(EN)
(5 V/div) (5 V/div)
VI(IN) = 5 V VI(IN) = 5 V
TA = 25°C TA = 25°C
VO(OUT) VO(OUT) CL = 1 µF
CL = 1 µF
(2 V/div) RL = 10 Ω
(2 V/div) RL = 10 Ω
0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20
t – Time – ms t – Time – ms
Figure 4. Turnon Delay and Rise Time Figure 5. Turnoff Delay and Fall Time
with 1-µF Load with 1-µF Load
VI(IN) = 5 V
VI(IN) = 5 V
TA = 25°C
TA = 25°C
VI(EN)
(5 V/div)
VO(OUT)
(2 V/div)
IO(OUT) IO(OUT)
(0.2 A/div) (0.5 A/div)
0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 90 100
t – Time – ms t – Time – ms
VI(IN) = 5 V
TA = 25°C
RL = 10 Ω
VI(EN) VO(OC)
(5 V/div) 470 µF (5 V/div)
220 µF
100 µF
VI(IN) = 5 V
Load Ramp,1A/100 ms
IO(OUT) TA = 25°C
IO(OUT)
(0.5 A/div)
(o.2 A/div)
t – Time – ms t – Time – ms
Figure 8. Inrush Current with 100-µF, 220-µF Figure 9. Ramped Load on Enabled Device
and 470-µF Load Capacitance
VI(IN) = 5 V VI(IN) = 5 V
TA = 25°C TA = 25°C
VO(OC) VO(OC)
(5 V/div) (5 V/div)
IO(OUT) IO(OUT)
(0.5 A/div) (1 A/div)
0 400 800 1200 1600 2000 0 20 40 60 80 100 120 140 160 180 200
t – Time – µs t – Time – µs
Figure 10. 4-Ω Load Connected to Enabled Device Figure 11. 1-Ω Load Connected
to Enabled Device
TYPICAL CHARACTERISTICS
Turn-Off Delay – ms
5
14
4.5 13
12
4
11
3.5
10
3 3
2.5 3 3.5 4 4.5 5 5.5 6 2.5 3 3.5 4 4.5 5 5.5 6
VI – Input Voltage – V VI – Input Voltage – V
Figure 12 Figure 13
f t – Fall Time – ms
2.8 3.1
2.7 2.9
2.6 2.7
2.5 2.5
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
IL – Load Current – A IL – Load Current – A
Figure 14 Figure 15
TYPICAL CHARACTERISTICS
1800
VI(INx) = 5.5 V
180 VI(INx) = 5 V 1600 VI(INx) = 5.5 V
VI(INx) = 5 V
1400
1200 VI(INx) = 4 V
160 VI(INx) = 4 V
1000
VI(INx) = 2.7 V 800 VI(INx) = 2.7 V
140
600
VI(INx) = 3.3 V
400
120
200
0
100 –200
–50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150
TJ – Junction Temperature – °C TJ – Junction Temperature – °C
Figure 16 Figure 17
TJ = 125°C TJ = 125°C
1600
180 TJ = 85°C
1200
160
800
TJ = 25°C
140
TJ = 0°C 400
TJ = 25°C
TJ = 85°C
TJ = –40°C
120
0
I I(IN)
TJ = –40°C TJ = 0°C
100 –400
2.5 3 3.5 4 4.5 5 5.5 6 2.5 3 3.5 4 4.5 5 5.5 6
VI – Input Voltage – V VI – Input Voltage – V
Figure 18 Figure 19
TYPICAL CHARACTERISTICS
175 175
IO = 0.5 A VI(INx) = 2.7 V
IO = 0.5 A
150 150
VI(INx) = 3.3 V
TJ = 125°C
125 125
TJ = 85°C
100 100
VI(INx) = 4.5 V
TJ = 25°C
75 75 TJ = 0°C
VI(INx) = 5 V
TJ = –40°C
50 50
–50 –25 0 25 50 75 100 125 150 2.5 3 3.5 4 4.5 5 5.5 6
TJ – Junction Temperature – °C VI – Input Voltage – V
Figure 20 Figure 21
TA = 25°C
I OS – Short-circuit Output Current – A
75 TJ = –40°C
0.9 TJ = 25°C
VI(INx) = 2.7 V
VI(INx) = 3.3 V
50
TJ = 125°C
0.85
VI(INx) = 5 V
25
VI(INx) = 4.5 V
0 0.8
0.1 0.2 0.4 0.5 0.6 2.5 3 3.5 4 4.5 5 5.5 6
IL – Load Current – A VI – Input Voltage – V
Figure 22 Figure 23
TYPICAL CHARACTERISTICS
VI(INx) = 5 V
0.9
VI(INx) = 4 V
1.15
VI(INx) = 2.7 V
0.85
1.125
1.1 0.8
2.5 3 3.5 4 4.5 5 5.5 6 –50 –25 0 25 50 75 100 125
VI – Input Voltage – V TJ – Junction Temperature – °C
Figure 24 Figure 25
2.4 400
Current Limit Response – µ s
2.3 300
2.2 200
150
2.1 100
50
2 0
–50 –25 0 25 50 75 100 125 150 0 2.5 5 7.5 10 12.5
TJ – Junction Temperature – °C Peak Current – A
Figure 26 Figure 27
TYPICAL CHARACTERISTICS
OVERCURRENT RESPONSE TIME (OCx)
vs
PEAK CURRENT
8
VI(INx) = 5 V
TA = 25°C
6
Response Time – µ s
0
0 2.5 5 7.5 10 12.5
Peak Current – A
Figure 28
APPLICATION INFORMATION
Power Supply 2
IN1
2.7 V to 5.5 V 15
6 OUT1 Load
IN2 0.1 µF 22 µF
14
OUT2 Load
16 0.1 µF 22 µF
OC1
13
OC2
12
OC3 11
9 OUT3 Load
OC4
0.1 µF 22 µF
3
EN1
4
EN2 10
7 OUT4 Load
EN3 0.1 µF 22 µF
8
EN4 1
GND1
5
GND2
APPLICATION INFORMATION
power-supply considerations
A 0.01-µF to 0.1-µF ceramic bypass capacitor between INx and GND, close to the device, is recommended.
Placing a high-value electrolytic capacitor on the output pin(s) is recommended when the output load is heavy.
This precaution reduces power-supply transients that may cause ringing on the input. Additionally, bypassing
the output with a 0.01-µF to 0.1-µF ceramic capacitor improves the immunity of the device to short-circuit
transients.
overcurrent
A sense FET checks for overcurrent conditions. Unlike current-sense resistors, sense FETs do not increase the
series resistance of the current path. When an overcurrent condition is detected, the device maintains a
constant output current and reduces the output voltage accordingly. Complete shutdown occurs only if the fault
is present long enough to activate thermal limiting.
Three possible overload conditions can occur. In the first condition, the output has been shorted before the
device is enabled or before VI(INx) has been applied (see Figure 6). The TPS2044 and TPS2054 sense the short
and immediately switch into a constant-current output.
In the second condition, the short occurs while the device is enabled. At the instant the short occurs, very high
currents may flow for a short time before the current-limit circuit can react. After the current-limit circuit has
tripped (reached the overcurrent trip threshhold) the device switches into constant-current mode.
In the third condition, the load has been gradually increased beyond the recommended operating current. The
current is permitted to rise until the current-limit threshold is reached or until the thermal limit of the device is
exceeded (see Figure 7). The TPS2044 and TPS2054 are capable of delivering current up to the current-limit
threshold without damaging the device. Once the threshold has been reached, the device switches into its
constant-current mode.
APPLICATION INFORMATION
OC response
The OC open-drain output is asserted (active low) when an overcurrent or overtemperature condition is
encountered. The output will remain asserted until the overcurrent or overtemperature condition is removed.
Connecting a heavy capacitive load to an enabled device can cause momentary false overcurrent reporting from
the inrush current flowing through the device, charging the downstream capacitor. An RC filter of 500 µs (see
Figure 30) can be connected to the OC pin to reduce false overcurrent reporting. Using low-ESR electrolytic
capacitors on the output lowers the inrush current flow through the device during hot-plug events by providing
a low impedance energy source, thereby reducing erroneous overcurrent reporting.
V+
V+
Rpullup
Rpullup
TPS2044 TPS2044
Rfilter
GND1 To USB
OC1 GND1 OC1
Controller
IN1 OUT1 IN1 OUT1
EN1 OUT2 Cfilter
EN1 OUT2
EN2 OC2 EN2 OC2
GND2 OC3 GND2 OC3
Figure 30. Typical Circuit for OC Pin and RC Filter for Damping Inrush OC Responses
PD + rDS(on) I2
APPLICATION INFORMATION
thermal protection
Thermal protection prevents damage to the IC when heavy-overload or short-circuit faults are present for
extended periods of time. The faults force the TPS2044 and TPS2054 into constant current mode, which causes
the voltage across the high-side switch to increase; under short-circuit conditions, the voltage across the switch
is equal to the input voltage. The increased dissipation causes the junction temperature to rise to high levels.
The protection circuit senses the junction temperature of the switch and shuts it off. Hysteresis is built into the
thermal sense circuit, and after the device has cooled approximately 20 degrees, the switch turns back on. The
switch continues to cycle in this manner until the load fault or input power is removed.
The TPS2044 and TPS2054 implement a dual thermal trip to allow fully independent operation of the power
distribution switches. In an overcurrent or short-circuit condition the junction temperature will rise. Once the die
temperature rises to approximately 140°C, the internal thermal sense circuitry checks which power switch is
in an overcurrent condition and turns that power switch off, thus isolating the fault without interrupting operation
of the adjacent power switch. Should the die temperature exceed the first thermal trip point of 140°C and reach
160°C, both switches turn off. The OC open-drain output is asserted (active low) when overtemperature or
overcurrent occurs.
APPLICATION INFORMATION
D+
Power Supply
D–
3.3 V 5V VBUS
TPS2044 +
33 µF GND
2
IN1
15
6 OUT1
IN2 D+
0.1 µF D–
14
OUT2 VBUS
+
† 33 µF GND
11 11
OC1
OUT3
3
EN1 D+
† 13
OC2
D–
4
USB EN2 VBUS
Controller † +
12 OC3 10 33 µF GND
OUT4
7
EN3
† 9
OC4 D+
8
EN4 D–
GND1 GND2 VBUS
+
1 5 33 µF GND
Bus-powered hubs obtain all power from upstream ports and often contain an embedded function. The hubs
are required to power up with less than one unit load. The BPH usually has one embedded function, and power
is always available to the controller of the hub. If the embedded function and hub require more than 100 mA
on power up, the power to the embedded function may need to be kept off until enumeration is completed. This
can be accomplished by removing power or by shutting off the clock to the embedded function. Power switching
the embedded function is not necessary if the aggregate power draw for the function and controller is less than
one unit load. The total current drawn by the bus-powered device is the sum of the current to the controller, the
embedded function, and the downstream ports, and it is limited to 500 mA from an upstream port.
APPLICATION INFORMATION
14 Internal
3 OUT2
Function
EN1 0.1 µF 10 µF
4
EN2
7
EN3
8 11 Internal
EN4 OUT3
Function
0.1 µF 10 µF
USB
Control
16 10 Internal
OC1 OUT4 Function
13 0.1 µF 10 µF
OC2
12
OC3 1
GND1
9
OC4 5
GND2
APPLICATION INFORMATION
APPLICATION INFORMATION
TUSB2040
Hub Controller
5V
33 µF†
† USB rev 1.1 requires 120 µF per hub.
APPLICATION INFORMATION
PC Board
TPS2044
GND1 OC1 Block of
IN1 OUT1 Circuitry
1000 µF 0.1 µF
EN3 OUT4 Block of
Optimum Circuitry
EN4 OC4
Overcurrent Response
By placing the TPS2044 and TPS2054 between the VCC input and the rest of the circuitry, the input power will
reach these devices first after insertion. The typical rise time of the switch is approximately 2.5 ms, providing
a slow voltage ramp at the output of the device. This implementation controls system surge currents and
provides a hot-plugging mechanism for any device.
www.ti.com 13-Jul-2022
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TPS2044D ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TPS2044 Samples
TPS2044DR ACTIVE SOIC D 16 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TPS2044 Samples
TPS2054D ACTIVE SOIC D 16 40 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 TPS2054 Samples
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
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PACKAGE OPTION ADDENDUM
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