Scribd Logo
Upload

Welcome to Scribd!

  • 21 views

    Fmmt449 Sot 23v2

    Uploaded by

    XJ Yang
    This document provides information on the FMMT449 transistor from Jiangsu Changjing Electronics Technology Co. It is an NPN plastic-encapsulated transistor in the SOT-23 package. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 1A, and thermal resistance of 625°C/W. Electrical characteristics include a typical DC current gain of 70-300 and collector-emitter saturation voltage of 0.5-1V. Dimensional drawings of the SOT-23 package and suggested pad layout are also included.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Fmmt449 Sot 23v2

    Uploaded by

    XJ Yang
    21 views3 pages
    This document provides information on the FMMT449 transistor from Jiangsu Changjing Electronics Technology Co. It is an NPN plastic-encapsulated transistor in the SOT-23 package. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 1A, and thermal resistance of 625°C/W. Electrical characteristics include a typical DC current gain of 70-300 and collector-emitter saturation voltage of 0.5-1V. Dimensional drawings of the SOT-23 package and suggested pad layout are also included.

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides information on the FMMT449 transistor from Jiangsu Changjing Electronics Technology Co. It is an NPN plastic-encapsulated transistor in the SOT-23 package. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 1A, and thermal resistance of 625°C/W. Electrical characteristics include a typical DC current gain of 70-300 and collector-emitter saturation voltage of 0.5-1V. Dimensional drawings of the SOT-23 package and suggested pad layout are also included.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views3 pages

    Fmmt449 Sot 23v2

    Uploaded by

    XJ Yang
    This document provides information on the FMMT449 transistor from Jiangsu Changjing Electronics Technology Co. It is an NPN plastic-encapsulated transistor in the SOT-23 package. Key specifications include a maximum collector-emitter voltage of 30V, collector current of 1A, and thermal resistance of 625°C/W. Electrical characteristics include a typical DC current gain of 70-300 and collector-emitter saturation voltage of 0.5-1V. Dimensional drawings of the SOT-23 package and suggested pad layout are also included.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    You are on page 1of 3

    JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO.

    , LTD

    SOT-23 Plastic-Encapsulate Transistors

    FMMT449 TRANSISTOR (NPN)


    SOT–23

    FEATURES
     Low Equivalent On-Resistance
    MARKING: 449

    MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE


    Symbol Parameter Value Unit 2. EMITTER
    VCBO Collector-Base Voltage 50 V 3. COLLECTOR
    VCEO Collector-Emitter Voltage 30 V
    VEBO Emitter-Base Voltage 5 V
    IC Collector Current 1 A
    PC Collector Power Dissipation 200 mW
    RΘJA Thermal Resistance From Junction To Ambient 625 ℃/W

    TJ,Tstg Operation Junction and -55～+150 ℃


    Storage Temperature Range

    ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)


    Parameter Symbol Test conditions Min Typ Max Unit
    Collector-base breakdown voltage V(BR)CBO IC=1mA, IE=0 50 V
    Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 30 V
    Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V
    Collector cut-off current ICBO VCB=40V, IE=0 0.1 µA
    Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA
    hFE(1) * VCE=2V, IC=50mA 70
    hFE(2) * VCE=2V, IC=500mA 100 300
    DC current gain
    hFE(3) * VCE=2V, IC=1A 80
    hFE(4) * VCE=2V, IC=2A 40
    VCE(sat)1* IC=1A, IB=100mA 0.5 V
    Collector-emitter saturation voltage
    VCE(sat)2* IC=2A, IB=200mA 1 V
    Base-emitter saturation voltage VBE(sat)* IC=1A, IB=100mA 1.25 V
    Base-emitter voltage VBE* VCE=2V, IC=1A 1 V
    VCE=10V,IC=50mA,
    Transition frequency fT 150 MHz
    f=100MHz
    Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 15 pF
    *Pulse test

    www.jscj-elec.com 1 Rev. - 2.0


    SOT-23 Package Outline Dimensions

    Dimensions In Millimeters Dimensions In Inches


    Symbol
    Min Max Min Max
    A 0.900 1.150 0.035 0.045
    A1 0.000 0.100 0.000 0.004
    A2 0.900 1.050 0.035 0.041
    b 0.300 0.500 0.012 0.020
    c 0.080 0.150 0.003 0.006
    D 2.800 3.000 0.110 0.118
    E 1.200 1.400 0.047 0.055
    E1 2.250 2.550 0.089 0.100
    e 0.950 TYP 0.037 TYP
    e1 1.800 2.000 0.071 0.079
    L 0.550 REF 0.022 REF
    L1 0.300 0.500 0.012 0.020
    θ 0° 8° 0° 8°

    SOT-23 Suggested Pad Layout

    NOTICE
    JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other
    changes without further notice to any product herein. JSCJ does not assume any liability arising
    out of the application or use of any product described herein.

    www.jscj-elec.com 2 Rev. - 2.0


    SOT-23 Tape and Reel

    www.jscj-elec.com 3 Rev. - 2.0

    You might also like

    pFad - Phonifier reborn

    Pfad - The Proxy pFad of © 2024 Garber Painting. All rights reserved.

    Note: This service is not intended for secure transactions such as banking, social media, email, or purchasing. Use at your own risk. We assume no liability whatsoever for broken pages.


    Alternative Proxies:

    Alternative Proxy

    pFad Proxy

    pFad v3 Proxy

    pFad v4 Proxy