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    2SC2001 77078

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    Pedro Daniel Gonzalez Cabañas
    This document provides specifications for the 2SC2001 NPN silicon transistor. It includes: 1) Key electrical characteristics such as a collector current of 0.7A, collector-base voltage of 30V, and operating temperature range of -55 to +150 degrees Celsius. 2) Pin configuration showing the transistor is in a TO-92 plastic package with the collector, base, and emitter pins labeled. 3) Tables listing electrical characteristics for off state, on state, and DC current gain parameters. Maximum power dissipation is 0.6 watts.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    2SC2001 77078

    Uploaded by

    Pedro Daniel Gonzalez Cabañas
    20 views1 page
    This document provides specifications for the 2SC2001 NPN silicon transistor. It includes: 1) Key electrical characteristics such as a collector current of 0.7A, collector-base voltage of 30V, and operating temperature range of -55 to +150 degrees Celsius. 2) Pin configuration showing the transistor is in a TO-92 plastic package with the collector, base, and emitter pins labeled. 3) Tables listing electrical characteristics for off state, on state, and DC current gain parameters. Maximum power dissipation is 0.6 watts.

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    2SC2001-77078

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    This document provides specifications for the 2SC2001 NPN silicon transistor. It includes: 1) Key electrical characteristics such as a collector current of 0.7A, collector-base voltage of 30V, and operating temperature range of -55 to +150 degrees Celsius. 2) Pin configuration showing the transistor is in a TO-92 plastic package with the collector, base, and emitter pins labeled. 3) Tables listing electrical characteristics for off state, on state, and DC current gain parameters. Maximum power dissipation is 0.6 watts.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views1 page

    2SC2001 77078

    Uploaded by

    Pedro Daniel Gonzalez Cabañas
    This document provides specifications for the 2SC2001 NPN silicon transistor. It includes: 1) Key electrical characteristics such as a collector current of 0.7A, collector-base voltage of 30V, and operating temperature range of -55 to +150 degrees Celsius. 2) Pin configuration showing the transistor is in a TO-92 plastic package with the collector, base, and emitter pins labeled. 3) Tables listing electrical characteristics for off state, on state, and DC current gain parameters. Maximum power dissipation is 0.6 watts.

    Copyright:

    © All Rights Reserved
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    MCC 

    
    omponents 2SC2001
    20736 Marilla Street Chatsworth
    
      !"#
    $
    %    !"#

    Features
    • Capable of 0.6Watts of Power Dissipation. NPN Silicon
    • Collector-current 0. 7A
    • Collector-base Voltage 30V Plastic-Encapsulate
    • Operating and storage junction temperature range: -55OC to +150 OC
    Transistor

    Pin Configuration TO-92


    Bottom View E C B
    A E

    Electrical Characteristics @ 25OC Unless Otherwise Specified B


    Symbol Parameter Min Max Units
    OFF CHARACTERISTICS
    V (BR)CEO Collector-Emitter Breakdown Voltage 25 --- Vdc
    (I C=10mAdc, IB =0)
    V(BR)CBO Collector-Base Breakdown Voltage 30 --- Vdc
    (I C=100uAdc, IE =0)
    V(BR)EBO Emitter-Base Breakdown Voltage 5.0 --- Adc C
    (I E =100uAdc, IC=0)
    I CBO Collector Cutoff Current --- 0.1 uAdc
    (VCB=30Vdc, IE =0)
    ICEO Collector Cutoff Current ---- 0.1 Vdc
    (V CE=20Vdc, IE =0)
    IEBO Emitter Cutoff Current --- 0.1 uAdc
    (V EB =5.0Vdc, IC=0)
    D
    ON CHARACTERISTICS
    hFE DC Current Gain 90 400 ---
    (I C=100mAdc, V CE=1.0Vdc)
    V CE(sat) Collector-Emitter Saturation Voltage --- 0.6 Vdc
    (I C=700mAdc, IB =70mAdc)
    V(BE)sat Base-Emitter Saturation Voltage --- 1.2 Vdc
    (I C=700mAdc, IB =70mAdc) G
    fT Transition Frequency 50 --- MHz
    (VCE=6.0Vdc, IC=10mAdc, f=30MHz) DIMENSIONS

    INCHES MM
    DIM MIN MAX MIN MAX NOTE
    A .175 .185 4.45 4.70
    B .175 .185 4.46 4.70
    CLASSIFICATION OF HFE C .500 --- 12.7 ---
    D .016 .020 0.41 0.63
    Rank M L K E .135 .145 3.43 3.68
    Range 90-180 135-270 200-400 G .095 .105 2.42 2.67

    www.mccsemi.com
    Revision: 2 2003/04/30
    This datasheet has been downloaded from http://www.digchip.com at this page

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