2019

Solid State Physics,Semiconductor

physics MCQS
For Bs physics
For the preparation of Entry test of University of punjab

Muhammad zarkash
Solid state physics
4/8/2019
Classification of Solids

1. Which one of the following is the property of an ionic compound?

a) High melting and boiling points
b) Low melting and boiling points
c) Weak inter-atomic forces
d) Non conductors of electricity
2. When do ionic compounds conduct electricity?
a) In gaseous state
b) In solid state
c) When dissolved in water
d) They never conduct
3. Which of the following covalent compounds conduct electricity?
a) Silica
b) Graphite
c) Diamond
d) Hydrogen chloride
4. Which of the following is a crystalline solid?
a) Anisotropic substances
b) Isotropic substances
c) Supercooled liquids
d) Amorphous solids
5. Why are the glasses of building milky?
a) Because of unwanted deposits
b) Because it becomes old
c) Because it is brittle
d) Because it changes in properties
6. Which of the following has body centered cubic structure?
a) Polonium
b) Copper
c) Nickel
d) Tungsten
7. What is the possible number of different types of lattices (3D)?
a) 4
b) 8
c) 14
d) 17
8. What is the lattice constant for FCC crystal having atomic radius 1.476 Å
a) 1.476 Å
b) 4.1748 Å
c) 5.216 Å
d) 0
9. The interplanar spacing of (220) planes of a FCC structure is 1.7458 Å. Calculate the lattice
constant.
 a) 4.983 Å
b) 2.458 Å
c) 0
d) 5.125 Å
10. Iron has a BCC structure with atomic radius 0.123 Å. Find the lattice constant.
a) 0
b) 4.587 Å
c) 2.314 Å
d) 0.2840 Å

Elasticity

1. When too many people stand on a bridge it collapses, why?

a) Due to increase in stress
b) Due to overweight
c) Due to improper construction
d) Due to friction

2. For a constant force, a rope breaks due to stress. Which of the following is useful to reduce the
stress?
a) Increase the length of the rope
b) Apply small force
c) Increase the cross sectional area of the rope
d) Use a different material of rope

3. When a rope is pulled on either side, what is the stress acting on it?
a) Compressive stress
b) Tensile stress
c) Normal stress
d) Tangential stress

4. What happens when the stress applied to the body is increased beyond the maximum value and
is removed after some time?
a) The body will come back to its original position
b) The body will oppose the stress
c) The body becomes hot
d) The body cannot return to its original position

5. What happens when the stress applied to the body is increased beyond the maximum value and
is removed after some time?
a) The body will come back to its original position
b) The body will oppose the stress
 c) The body becomes hot
d) The body cannot return to its original position

6. What will happen to the elastic property of Gold when Potassium is added to gold?
a) The elastic property of gold decreases
b) The elastic property of gold remains unaltered
c) The elastic property of gold increases
d) Gold loses its elastic property

7. A copper wire of length 3m and 1mm diameter is subjected to a tension of 5N. Calculate the
elongation produced, if the young’s modulus of copper is 120GPa
a) 15m
b) 1800m
c) 0.125 ×10-3 m
d) 15.9mm

8. The modulus of rigidity and Poisson’s ratio of the wire are 2.87 × 1010 N/m2 and 0.379
respectively. What is the value of young’s modulus of the material of the wire.
a) 1.08773 × 1010 N/m2
b) 7.915 × 1010 N/m2
c) 7.5725 × 1010 N/m2
d) 0.1403 × 1010 N/m2

9. What is the effect of hammering on elasticity of materials?

a) Has no effect on elasticity
b) Decreases the elasticity
c) Increases the elasticity
d) Breaks the material

10. Calculate the Young’s modulus in the cantilever depression method. The length is 1m which is
suspended with a load of 150gm. The depression is found to be 4cm. The thickness of the beam is
5mm and breadth is 3cm.
a) 3.92 × 1010 N/m2
b) 9000 × 1010 N/m2
c) 4000 × 1010 N/m2
d) 1.245 ×1010 N/m2

11. What is the effect of annealing on elasticity of materials?

a) Increases the elasticity
b) Decreases the elasticity
c) Has no effect on elasticity
d) Distorts the material
 12. Which type of elasticity is involved in tangential push on the upper face of a block?
a) Bulk modulus
b) Young’s modulus
c) Rigidity modulus
d) Elastic limit

Hall Effect

1. When does a normal conductor become a superconductor?

a) At normal temperature
b) At Curie temperature
c) At critical temperature
d) Never

2. In which of the following does the residual resistivity exist?

a) Impure metal at high temperature
b) Pure metal at low temperature
c) Pure metal at high temperature
d) Impure metal at low temperature

3. Meissner effect occurs in superconductors due to which of the following properties?

a) Diamagnetic property
b) Magnetic property
c) Paramagnetic property
d) Ferromagnetic property

4. What happens when a large value a.c. current is passed through superconductors?
a) Conductivity increases
b) Superconducting property is destroyed
c) It acts as a magnet
d) It becomes resistant

5. How is persistent current produced in supermagnets?

a) By passing ac current
b) By magnetising it
c) By passing dc current
d) By increasing the resistance

6. Superconducting tin has a critical temperature of 3.7K at zero magnetic field and a critical field
at 0.0306 Tesla at 0K. Find the critical field at 2K.
a) 0.0306 Tesla
b) 7.4 Tesla
 c) 0.02166 Tesla
d) 0 Tesla

7. Calculate the critical current for a wire of lead having a diameter of 1mm at 4.2 K. Calculate
temperature for lead is 7.18 K and Hc = 6.5×104 A/m. Critical field is 42.758×103 A/m.
a) 3.5593 A
b) 27.3 A
c) 46.67 A
d) 134.26 A

Properties of Semiconductors

1. How does a semiconductor behave at absolute zero?

a) Conductor
b) Insulator
c) Semiconductor
d) Protection device

2. Semiconductor acts as an insulator in the presence of impurities.

a) True
b) False

3. How is the resistance of semiconductor classified?

a) High resistance
b) Positive temperature co-efficient
c) Negative temperature co-efficient
d) Low resistance

4. What are the charge carriers in semiconductors?

a) Electrons and holes
b) Electrons
c) Holes
d) Charges

5. 5. Which of the following is known as indirect band gap semiconductors?

a) Germanium
b) Nickel
c) Platinum
d) Carbon

6. Which column elements are combined to make compound semiconductors?

a) First and fourth
 b) Fifth and sixth
c) Second and fourth
d) Third and fifth

7. Compound semiconductors are also known as direct band gap semiconductors.

a) True
b) False

8. How is charge carriers produced in intrinsic semiconductors?

a) By pure atoms
b) By electrons
c) By impure atoms
d) By holes

9. What type of material is obtained when an intrinsic semiconductor is doped with pentavalent
impurity?
a) N-type semiconductor
b) Extrinsic semiconductor
c) P-type semiconductor
d) Insulator

10. What type of material is obtained when an intrinsic semiconductor is doped with trivalent
impurity?
a) Extrinsic semiconductor
b) Insulator
c) N-type semiconductor
d) P-type semiconductor

11. Which method can be used to distinguish between the two types of carriers?
a) Hall effect
b) Rayleigh method
c) Doppler effect
d) Fermi effect

12. Find the resistance of an intrinsic Ge rod cm long, 1mm wide and 1mm thick at 300K.
a) 2.32 ohm
b) 5314 ohm
c) 4310 ohm
d) 431 ohm

13. A semiconducting crystal 12mm long, 5mm wide and 1mm thick has a magnetic flux density of
0.5Wb/m2 applied from front to back perpendicular to largest faces. When a current of 20mA
 flows length wise through the specimen, the voltage measured across its width is found to be
37μV. What is the Hall coefficient of this semiconductor?
a) 37×10-6 m3/C
b) 3.7×10-6 m3/C
c) 3.7×106 m3/C
d) 0

14. The intrinsic carrier density at room temperature in Ge is 2.37×1019/m3. If the electron and hole
mobilities are 0.38 and 0.18 m2/Vs respectively. Calculate its resistivity.
a) 0.18ohm m
b) 0.460ohm m
c) 0.4587ohm m
d) 0.709ohm m

15. A silicon plate of thickness 1mm, breadth 10mm and length 100mm is placed in a magnetic field
of 0.5 Wb/m2 acting perpendicular to its thickness. If 10-3 A current flows along its length,
calculate the Hall voltage developed, if the Hall coefficient is 3.66×104 m3/Coulomb.
a) 1.83×10-3Volts
b) 3.66×10-4Volts
c) 0.5Volts
d) 25.150Volts

16. The conductivity of germanium at 20°C is 2/ohm m. What is its conductivity at 40°C? Eg=0.72eV
a) 1.38×10-23/Ohm m
b) 1.0002/ Ohm m
c) 293/ Ohm m
d) 313/ Ohm m

17. What is the Fermi energy of a n-type semiconductor?

a) E
b) E(F )= (Ec+ Ev)/2
c) EF = (Ec+ Ed)/2
d) EF = (Ev+ Ea)/2

18. EF = (Ec+ Ev)/2, this represents the Fermi energy level of which of the following?
a) Extrinsic semiconductor
b) N-type semiconductor
c) P-type semiconductor
d) Intrinsic semiconductor

19. For semiconductors, the resistivity is inversely proportional to the temperature for
semiconducting materials.
 a) True
b) False

Properties of Dielectric Materials

1. What is the process of producing electric dipoles inside the dielectric by an external electric
field?
a) Polarisation
b) Dipole moment
c) Susceptibility
d) Magnetisation

2. 2. Which of the following easily adapt itself to store electrical energy?

a) Passive dielectric
b) Superconductor
c) Active dielectric
d) Polar molecules

3. Which of the following restricts the flow of electrical energy?

a) Superconductors
b) Passive dielectrics
c) Polar molecules
d) Active dielectric

4. For non-polar molecules, there is no absorption or emission in the range of infrared.

a) True
b) False

5. 5. How does ionic polarisation occur?

a) Splitting of ions
b) Passing magnetic field
c) Displacement of cations and anions
d) Never occurs

6. Polar molecules have permanent dipole moments even in the absence of an electric field.
a) False
b) True

7. Which of the following polarisations is very rapid?

a) Electronic polarisation
b) Ionic polarisation
 c) Space charge polarisation
d) Orientation polarization

8. Materials whose bounded dominant charges that are not free to travel are

a) Dielectrics
b) semiconductors
c) superconductors
d) conductors

9. Dielectrics are basically

a) insulators
b) semiconductors
c) superconductors
d) conductors

10. Dielectric material's atoms and molecules are microscopically

a) positive
b) negative
c) neutral
d) None of these

Theory of Ferromagnetism

1. In which of the following the magnetic moments align themselves parallel to each other?
a) Paramagnetic material
b) Ferromagnetic material
c) Ferrimagnetic material
d) Diamagnetic material

2. Which of the following is a strong magnet?

a) Diamagnetic material
b) Paramagnetic material
c) Antiferromagnetic material
d) Ferromagnetic material

3. Which of the following exhibits spontaneous magnetisation?

a) Paramagnetic material
b) Ferrimagnetic material
c) Diamagnetic material
d) Ferromagnetic material
4. When does a ferromagnetic material become paramagnetic material?
a) At Curie temperature
b) Below Curie temperature
c) Above Curies temperature
d) Never

5. 5. Which of the following materials have a permanent magnetic moment?

a) Ferromagnetic material
b) Ferrimagnetic material
c) Diamagnetic material
d) Paramagnetic material

6. In which of the following the increases and then decreases?

a) Ferromagnetic material
b) Antiferromagnetic material
c) Paramagnetic material
d) Diamagnetic material

7. What is the material used in two port device?

a) Ferromagnets
b) Ferrites
c) Antiferromagnets
d) Paramagnets

8. A paramagnetic material had a magnetic field intensity of 104 A/m. If the susceptibility of the
material at room temperature is 3.7×10-3, calculate the magnetisation.
a) 37A/m
b) 3.7A/m
c) 370A/m
d) 0

9. A paramagnetic material had a magnetic field intensity of 104 A/m. If the susceptibility of the
material at room temperature is 3.7×10-3, calculate the flux density in the material.
a) 37Wb/m2
b) 3.725Wb/m2
c) 0.012612Wb/m2
d) 0

10. 10. A piece of ferric oxide with magnetic field intensity 106 A/m and susceptibility is 1.5 ×10-3.
Find the magnetisation of the material.
a) 15A/m
b) 150A/m
 c) 1.5A/m
d) 1500A/m

Solid state practice mcqs

1. The three dimensional graph of lattice points which sets the pattern for the whole
lattice is called

(a) Space lattice

(b) Simple lattice

(c) Crystal lattice

(d) Unit cell

2. The edge of unit cell of fcc Xe crystal is 620 pm. The radius of Xe atom is

(a) 189.37 pm

(b) 209.87

(c) 219.25 pm

(d) 235.16

3. For an ionic crystal of the general formula AX and coordination number 6, the value
of radius ratio will be

(a) In between 0.732 and 0.414

(b) In between 0.414 and 0.225

(c) Less than 0.225

(d) Greater than 0.732

4. If Z is the number of atom in the unit cell that represents the closest packing
sequence … ABC ABC …, the number of tetrahedral voids in the unit cell is equal to

(a) Z

(b) 2Z
 (c)

(d)

5. If the distance between Na+ and Cl–ions in sodium chloride crystal is x pm, the length
of the edge of the unit cell is

(a)

(b)

(c) 2x pm

(d) 4x pm

6. The interionic distance for cesium chloride crystal will be

(a) a

(b)

(c)

(d)

7. Compounds with identical crystal structure and analogous chemical formula are
called

(a) Isomers

(b) Isotones

(c) Allotropes
 (d) Isomorphous

8. Which among the following will show anisotropy?

(a) Glass

(b) Plastic

(c) Barium chloride

(d) Wood

9. Tetragonal crystal system has the following unit cell dimensions

(a) a = b = c and a = b = g = 90°

(b) a ¹ b ¹ c and a = b = g = 90°

(c) a = b ¹ c and a = b = g = 90°

(d) a = b ¹ c and a = b = 90° and g = 120°

10. Sodium metal crystallizes as a body centred cubic lattice with the cell edge 4.29 Å.
What is the radius of sodium atom?

(a) 1.857 × 10–8 cm

(b) 2.371 × 10–7 cm

(c) 3.817 × 10–8 cm

(d) 9.312 × 10–7 cm

11. If the pressure on a NaCl structure is increased, then its coordination number will

(a) Increase

(b) Decrease

(c) Either (a) or (b)

(d) Remain the same

12. Copper crystallizes in fcc with a unit cell length of 361 pm. What is the radius of
copper atom?
 (a) 108 pm

(b) 127 pm

(c) 157 pm

(d) 181 pm

13. Total volume of atoms present in a face-centred cubic unit cell of a metal is (r is
atomic radius)

(a)

(b)

(c)

(d)

14. KCl crystallises in the same type of lattice as does NaCl Given that

and Calculate the ratio fo the side of the uint cell for KCl to
that of NaCl.

(a) 1.123

(b) 0.0891

(c) 1.414

(d) 0.414

15.Lattice points have another name which is called

a) lattice sites
b) lattice arrangements
c) lattice circles
d) lattice array
16. In crystal lattice ions are arranged in

a) two dimensions

b) four dimension

c) three dimensions
d) single dimension

17. Points which shows position of atoms in a crystal are called

a)lattice points

b)lattice lines

c)lattice circles

d) lattice arrangements

18. Crystal lattice is actually

a) array of points

b)lines of points

c) sum of points

d) Triangle of points

19.Crystal lattice is also known as

a) lattice triangle
b) space lattice
c) lattice line
d) lattice array
e)
20. In a crystal, the coupling of conduction electrons with phonons results in
a) Thermal conductivity
b) Electrical resistivity
c) Thermal resistivity
d) Propagation of sound
 21.which of the following is not a property of crystalline solid?
a) Isotropy
b) Anisotropy
c) Sharp melting point
d) Definite geometry
22. A vacancy and an interstitial in close enough proximity in a crystal is known as
a) Surface defect
b) Line defect
c) Schottky defect
d) Frenkel defect
23.The volume density of a body centered cubic crystal is 1.6 x 1022 cm-3. The lattice parameter
‘a’ is
a) 5 Å
b) 5.72 Å
c) 6.3 Å
d) 8.55 Å

24.The space lattice of diamond is fcc. The primitive basis has two identical atoms at
a) 000, ¼ ¼ ¼
b) 000, ½ ½ ½
c) 000, ½ ½ 0
d) 000, ¼ ¼ ¾
25.Magnons are defined as
a) Quantized spin waves
b) Quantized lattice vibrations
c) Quantized e-m waves
d) Quantized collective electron waves
26.The dielectric function ( ) gives the response of a crystal to
a) Elastic waves
b) e-m waves
c) Spin waves
d) Alfven waves

Bravais Lattices

1. Most Bravais lattices are of the type:

a) Primitive unit cell
b) Body centered unit cell
c) End centered unit cell
d) Face centered unit cell
2. In which of the following Bravais lattices, not all axial angles are right angles?
a) Tetragonal
b) Rhombohedral
c) Orthorhombic
d) Cubic
3. Which of the following Bravais lattices exist as face centered unit cell?
a) Orthorhombic
b) Monoclinic
c) Tetragonal
d) None of the mentioned
4. Coordination number for an ideal BCC metallic crystal is:
a) 8
b) 6
c) 12
d) Varies for different metals
5. Number of particles in a primitive cubic unit cell is:
a) 1
b) 2
c) 3
d) 4
6. In which of the following Bravais lattices none of the sides are equal?
a) Triclinic
b) Monoclinic
c) Orthorhombic
d) All of the mentioned
7. Graphite is a common allotrope of Carbon. Its crystal structure is:
a) Cubic
b) Monoclinic
c) Orthorhombic
d) Hexagonal
8. Which of the following lattices has the highest void fraction?
a) Hexagonal close packed
b) Body centered cubic
c) Face centered cubic
d) Primitive cubic
9. Which of the following unit cells do not exist for tetragonal lattices?
a) Primitive centered unit cell
b) Body centered unit cell
c) Face centered unit cell
d) All of the mentioned exist
10. Most unsymmetrical Bravais lattice in terms of axial distances and angles is:
a) Monoclinic
b) Triclinic
c) Rhombohedral
d) Hexagonal

Properties of Crystals
1. Allotropes differ in which of the following properties:
a) Atomic Number
b) Atomic Mass
c) Crystal Structure
d) Electronegativity
2. Co-ordination number of a crystalline solid is:
a) Number of particles in the unit cell
b) Number of nearest neighbours of a particle
c) Number of octahedral voids in a unit cell
d) Number of tetrahedral voids in a unit cel
3. Packing efficiency of a crystal structure is the ratio of:
a) Volume occupied by particles to the total volume of the unit cell
b) Volume occupied by particles to that by voids
c) Total volume of the unit cell to the volume occupied by particles
d) Volume occupied by voids to that by particles
4. HCP and BCC are called close-packed structures. Close packed structures have:
a) Highest packing efficiency
b) Highest void fraction
c) Highest density
d) All of the mentioned
5. An octahedral void is surrounded by:
a) 8 atoms
b) 18 atoms
c) 6 atoms
d) 16 atoms
6. Which of the following is a property of amorphous solids?
a) Sharp melting point
b) Isotropy
c) Long range order
d) Definite heat of fusion
7. Which of the following is a crystalline solid?
a) Copper wire
b) Glass bottle
c) Polythene bag
d) Rubber ball
8. The smallest portion of a crystal which when repeated in different directions generates the
entire crystal is called:
a) Lattice points
b) Crystal lattice
c) Unit cell
d) None of the mentioned
9. Which of the following is not a property of metal glass?
a) Transparent
b) Poor thermal conductivity
 c) High magnetic susceptibility
d) None of the mentioned
10. Grain boundaries are one of the causes of corrosion of metals?
a) True
b) False

Bragg’s Law

1. X-rays have larger wavelengths than which of the following?

a) Gamma rays
b) Beta rays
c) Microwave
d) Visible light
2. X-ray diffraction patterns are used for studying crystal structure of solids because
a) They have very high energy, hence they can penetrate through solids
b) They are electromagnetic radiation, and hence do not interact with matter (crystals)
c) Their wavelengths are comparable to inter-atomic distances
d) Their high frequency enables rapid analysis
3. For destructive interference to take place, the path difference between the two waves should be:
a) nλ
b) 2nλ
c) (n + 1/2)λ
d) (2n + 1)λ
4. Bragg’s law is not a sufficient condition for diffraction by crystalline solids.
a) True
b) False
5. The Miller indices h, k, and l of parallel planes in a BCC lattice should satisfy which of the
following X-ray diffraction reflection rules?
a) h + k + l should be even
b) h, k, and l should all be either even or odd
c) h, k, and l should form Pythagoras triplet
d) all planes allow reflections
6. Minimum interplanar spacing required for Bragg’s diffraction is:
a) λ/4
b) λ/2
c) λ
d) 2λ
7. Laue’s model pictures XRD as reflection from parallel crystalline planes. Reflection is different
from refraction as:
a) diffraction occurs throughout the bulk
b) intensity of diffracted beams is less
c) diffraction in crystals occurs only at Bragg’s angles
d) all of the mentioned
 8. In Bragg’s equation [nλ = 2.d.sinθ], θ is the angle between:
a) specimen surface and incident rays
b) normal to specimen surface and incident rays
c) parallel lattice surfaces d distance apart and incident rays
d) normal to parallel lattice surfaces d distance apart and incident rays
9. In the powder method of XRD, the intensities of various bright lines are compared to determine
the crystal structure. For simple cubic lattice the ratio of intensities at first two maxima are:
a) 1⁄2
b) 3⁄4
c) 1⁄2
d) None of the mentioned
10. K-alpha x-rays have shorter wavelengths than K-beta x-rays?
a) True
b) False

Defects in solids

1. Frenkel defect belongs to which of the following classes?

a) Point defect
b) Linear dislocation
c) Interfacial defect
d) Bulk defect
2. The ratio of the number of vacancies to a total number of lattice points for a metal near melting
temperature is of the order of 10-4. For lower temperatures, the ratio:
a) increases
b) decreases
c) remains the same
d) may increase or decrease depending on the metal
3. Foreign species is present in which of the following defects?
a) Interstitial
b) Vacancy
c) Substitution
d) All of the mentioned
4. Edge dislocation and skew dislocation are linear crystalline defects.
a) True
b) False
5. Burger vectors are relevant to which of the following crystalline defects?
a) Point defects
b) Line defects
c) Interfacial defects
d) Bulk defects
6. Pores & cracks in crystalline solids can be classified as bulk defects.
a) True
b) False
7. Ferromagnetic material shows strong para-magnetic behaviour due to the formation of domains.
These domains belong to:
a) Point defects
b) Linear defects
c) Interfacial defects
d) Bulk defects
8. Electrical conductivity of the specimen is a requirement for which of the following microscopic
examination techniques?
a) Optical microscopy
b) Transmission electron microscopy
c) Scanning electron microscopy
d) Scanning probe microscopy
9. Which of the following point defects is non-stoichiometric in nature?
a) Schottky defect
b) Metal excess defect
c) Interstitial defect
d) Impurity defect
10. The solubility of solute in a solvent in a solid solution is governed by Hume-Rothery rules. The
solubility is more if:
a) radii of solute are much smaller than that of solvent
b) solute an solvent have a similar crystal structure
c) solute has low valence
d) all of the mentioned
11. Which type of defect are point defects?
a) One dimensional defect
b) Zero dimensional defect
c) Two dimensional defect
d) Three dimensional defect
12. Which of the following point defects can be attributed to from the below options?
i) Stress Fields
ii) Strain fields
iii) Charge
iv) Current
a) i) and ii)
b) ii) and iv)
c) i) and iii)
d) ii) and iv)
13. Which is not a name given to vacancy in some ionic solid?
a) H-center
b) F-center
c) Color center
d) Luminescence center
14. What is the color of zinc oxide?
a) Blue
b) Red
 c) Yellow
d) Orange
15. If the number of F-centers are more, the color of the compound gets more intense.
a) True
b) False
16. F-centers are _________
a) Cathodic vacancy in a crystal occupied by one or more paired electron
b) Cathodic vacancy in a crystal occupied by one or more unpaired electron
c) Anionic vacancy in a crystal occupied by one or more paired electron
d) Anionic vacancy in a crystal occupied by one or more unpaired electron
17. In which of the following defect the density of the crystal is affected?
a) Schottky defect
b) Frenkel defect
c) Stone-Wales defect
d) Antisite defect
18. Schottky and Frenkel defects are ___________
a) Interstitial and vacancy defects respectively
b) Vacancy and interstitial defect respectively
c) Both interstitial defects
d) Both vacancy defects
19. Which of the following compound shows both Schottky and frenkel defect?
a) Silver(I) iodide
b) Silver(I) bromide
c) Magnesium sulphide
d) Titanium oxide
20. For the given magnitude of shift which of the following can cause the formation of an off-center
ion?
a) 0.1 Å
b) 0.05 Å
c) 0.5 Å
d) 1.1 Å
21. The presence of interstitial carbon atom increases the hardness of which of the following:
a) Martensite
b) Austenite
c) Cementite
d) Pearlite
22. Which thermodynamic property increases in a crystalline solid due to the presence of vacancies?
a) Enthalpy
b) Entropy
c) Internal energy
d) Work done
23. Which type of diffusion occurs due to the exchange of an atom with vacancies?
a) Substitution diffusion
b) Elimination diffusion
 c) Passive diffusion
d) Facilated diffusion
24. How is the concentration of defect related with free energy?
a) The concentration of defect increases free energy
b) The concentration of defect decrease free energy
c) The concentration of defect is equal to free energy
d) The concentration of defect is not related to free energy
25. Which of the following is not the feature of solute and solvent atoms that determine the degree to
which former dissolve in latter?
a) Corrosion factor
b) Atomic size factor
c) Crystal structure
d) Valences
26. In which type of defect smaller cation can get displaced into an interstitial void?
a) Schottky defect
b) Intrinsic defect
c) Extrinsic defect
d) Frankel defect
27. Which of the following phenomenon creates point defect in ceramics?
a) Thermal excitation
b) Precipitation
c) Densification
d) Electrical conductivity
28. Which of the following oxides are highly defective?
a) Al2O3
b) MgO
c) CaO
d) FeO
29. In case of point defect in polymers probability of which part of the polymer is likely to be defected
more compared to other?
a) Center of polymer chain
b) Chain ends
c) Main chain units
d) Starting part of chain
30. A dissolution in which an extra portion of a plane of atoms or a half plane terminates within a
crystal is called as ________
a) Edge dislocation
b) Mixed dislocation
c) Interfacial dislocation
d) Screw dislocation
31. The magnitude and direction of lattice distortion are expressed in terms of which vector?
a) Dislocation vector
b) Screw vector
c) Edge vector
d) Burger vector
32. What is the relative orientation of dislocation lines for edge dislocation?
a) Parallel
b) Perpendicular
c) Circular
d) Both parallel and perpendicular
33. What type of direction will the burger vector of dislocation for a metallic material show?
a) Closed-packed crystallographic direction
b) Rounded-packed crystallographic direction
c) Open-packed crystallographic direction
d) Parallel-packed crystallographic direction
34. Which technique is used to observe dislocation?
a) Positron annihilation technique
b) Thermal imaging
c) Thermal expansion measurements
d) Electron-microscope technique
35. Path of screw dislocation is in the form of _______
a) Circular
b) Cylindrical
c) Spiral or helical
d) Rectangular
36. Which type of deformation occurs due to dislocation?
a) Slip plastic deformation
b) Elastic deformation
c) It does not show deformation
d) Slip elastic deformation
37. Which type of stress is involved in the motion of screw dislocation?
a) Tensile stress
b) Shear stress
c) Compressive stress
d) Does not involve stress
38. Which type(s) of dislocation are included in mixed dislocation?
a) Only Edge dislocation
b) Only shear dislocation
c) Only screw dislocation
d) Both edge and screw dislocation
39. What is the mechanism in which edge dislocation move out of the slip is called _______
a) Climb dislocation
b) Screw dislocation
c) Shear dislocation
d) Slip dislocation
40. Which type of defect are line defects?
a) One-dimensional defect
b) Zero-dimensional defect
c) Two-dimensional defect
d) Three-dimensional defect\
 41. Edge dislocation and skew dislocation are linear crystalline defects.
a) True
b) False
42. Which of the following statement is false?
a) Burger vector is the right angle to edge dislocation
b) In screw defect the line defect is parallel to the displacement vector
c) Grain boundary defect is a type of line defect
d) Line defect occurs during the recrystallization process or during slip
43. In which type of dislocation an extra plane is inserted inside the crystal?
a) Edge dislocation
b) Screw dislocation
c) Jog dislocation
d) Mixed dislocation
44. What is the difference between the angle of Burgers vector and dislocation line in edge dislocation
and screw dislocation?
a) -90 degrees
b) 0 degrees
c) 45 degrees
d) 90 degrees
45. To determine yield strength of a material which of the following needn’t be affected?
a) Solute hardening
b) Precipitation hardening
c) Work hardening
d) Martensic transformation
46. In which type of dislocation planes are displaced relative to each other through shear?
a) Edge dislocation
b) Screw dislocation
c) Jog dislocation
d) Mixed dislocation
47. In an edge dislocation, a helical path is traced around the dislocation line.
a) True
b) False
48. Which of the following is fields are not present for edge dislocation?
a) Tensile
b) Compressive
c) Shear stress
d) Strain
49. Which of the following is fields are present for screw dislocation?
a) Tensile
b) Compressive
c) Shear stress
d) Strain

Types of Solids, Crystal Structures and Lattices

1. Lead is a metallic crystal having a _______ structure.
a) FCC
b) BCC
c) HCP
d) TCP
2. Which of the following has a HCP crystal structure?
a) W
b) Mo
c) Cr
d) Zr
3. Amorphous solids have _______ structure.
a) Regular
b) Linear
c) Irregular
d) Dendritic
4. At ________ iron changes its BCC structure to FCC.
a) 308oC
b) 568oC
c) 771oC
d) 906oC
5. At room temperature, tin is formed into _________
a) Gray tin
b) White tin
c) Red tin
d) Yellow tin
6. Which of the following is a property of non-metallic crystals?
a) Highly ductile
b) Less brittle
c) Low electrical conductivity
d) FCC structure
7. Which of the following is not an amorphous material?
a) Glass
b) Plastics
c) Lead
d) Rubbers
8. The crystal lattice has a _________ arrangement.
a) One-dimensional
b) Two-dimensional
c) Three-dimensional
d) Four-dimensional
9. The smallest portion of the lattice is known as __________
a) Lattice structure
b) Lattice point
c) Bravais crystal
d) Unit cell
10. Bravais lattice consists of __________ space lattices.
a) Eleven
b) Twelve
c) Thirteen
d) Fourteen
11. A unit cell that contains lattice points only at the corners is known as _________
a) Primitive unit cell
b) Secondary unit cell
c) Layered unit cell
d) Derived unit cell
12. The axial relationship of a monoclinic crystal system is given as ___________
a) a = b = c
b) a = b ≠ c
c) a ≠ b = c
d) a ≠ b ≠ c
13. The axial relationship of a rhombohedral crystal system is given as ___________
a) a = b = c
b) a = b ≠ c
c) a ≠ b = c
d) a ≠ b ≠ c
14. The interracial angles of a hexagonal crystal system are given by __________
a) α = β = ϒ = 90o
b) α = β = 90o ϒ = 120o
c) α = β = ϒ ≠ 90o
d) α ≠ β ≠ ϒ ≠ 90o
15. The interracial angles of a triclinic crystal system are given by __________
a) α = β = ϒ = 90o
b) α = β = 90o ϒ = 120o
c) α = β = ϒ ≠ 90o
d) α ≠ β ≠ ϒ ≠ 90o
16. What is the atomic radius of a BCC crystal structure?
a) a/2
b)√𝟑𝒂/2
c)a/√2
d) None
17. What is the coordination number of a simple cubic structure?
a) 6
b) 8
c) 10
d) 12
18. What is the atomic packing factor of BCC structure?
a) 0.54
b) 0.68
c) 0.74
d) 0.96
 19. What is the atomic radius of a Simple cubic crystal structure?
a) a/2
b)√3𝑎/2
c)a/√2
d) None
20. What is the atomic packing factor of simple cubic structure?
a) 0.52
b) 0.68
c) 0.74
d) 0.96
21. What is the coordination number of a BCC structure
a) 6
b) 8
c) 10
d) 12

22.What is the atomic packing factor of FCC structure?

a)0.52

b)0.68

c)0.74

d)0.96

23. Simple cubic, FCC & BCC are the examples of

a) Metal crystals

b) Ionic crystals

c) Valence crystals

d) Van der waals crystal

Solids state physics practice MCQS

 Semiconductor physics
Semiconductor Theory
Q1.A semiconductor is formed by ……… bonds.
a) Covalent
b) Electrovalent
c) Co-ordinate
d) None of the above
Q2.A semiconductor has ………… temperature coefficient of resistance.
a) Positive
b) Zero
c) Negative
d) None of the above
Q3.The most commonly used semiconductor is ………..
a) Germanium
b) Silicon
c) Carbon
d) Sulphur
Q4. A semiconductor has generally ……………… valence electrons.
a) 2
b) 3
c) 6
d) 4
Q5. The resistivity of pure germanium under standard conditions is about ……….
a) 6 x 104
b) Ω cm
c) 60
d) Ω cm
Q6. The resistivity of a pure silicon is about ……………
a) 100 Ω cm
b) 6000 Ω cm
c) 3 x 105 Ω m
d) 6 x 10-8 Ω cm
Q7. When a pure semiconductor is heated, its resistance …………..
a) Goes up
b) Goes down
c) Remains the same
d) Can’t say
Q8. The strength of a semiconductor crystal comes from ……..
a) Forces between nuclei
b) Forces between protons
c) Electron-pair bonds
 d) None of the above
Q9. When a pentavalent impurity is added to a pure semiconductor, it becomes ………
a) An insulator
b) An intrinsic semiconductor
c) p-type semiconductor
d) n-type semiconductor
Q10. Addition of pentavalent impurity to a semiconductor creates many ……..
a) Free electrons
b) Holes
c) Valence electrons
d) Bound electrons
Q11. A pentavalent impurity has ………. Valence electrons
a) 3
b) 5
c) 4
d) 6

Q12. An n-type semiconductor is ………

a) Positively charged
b) Negatively charged
c) Electrically neutral
d) None of the above
Q13. A trivalent impurity has ….. valence electrons
a) 4
b) 5
c) 6
d) 3
Q14. Addition of trivalent impurity to a semiconductor creates many ……..
a) Holes
b) Free electrons
c) Valence electrons
d) Bound electrons
Q15. A hole in a semiconductor is defined as …………….
a) A free electron
b) The incomplete part of an electron pair bond
c) A free proton
d) A free neutron
16. The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.
a) 10 atoms for 108 atoms
b) atom for 108 atoms
c)1 atom for 104 atoms
d)1 atom for 100 atoms
Q17. As the doping to a pure semiconductor increases, the bulk resistance of the
semiconductor ………..
a) Remains the same
b) Increases
 c) Decreases
d) None of the above
Q18. A hole and electron in close proximity would tend to ……….
a) Repel each other
b) Attract each other
c) Have no effect on each other
d) None of the above
Q19. In a semiconductor, current conduction is due to ……..
a) Only holes
b) Only free electrons
c) Holes and free electrons
d) None of the above
Q20. The random motion of holes and free electrons due to thermal agitation is called
……….
a) Diffusion
b) Pressure
c) Ionisation
d) None of the above
Q21. A forward biased pn junction diode has a resistance of the order of
a) Ω
b) kΩ
c) MΩ
d) None of the above
Q22. The battery connections required to forward bias a pn junction are ……
a) +ve terminal to p and –ve terminal to n
b) -ve terminal to p and +ve terminal to n
c) -ve terminal to p and –ve terminal to n
d) None of the above
Q23. The barrier voltage at a pn junction for germanium is about ………
a) 5 V
b) 3 V
c) Zero
d) 3 V
Q24. In the depletion region of a pn junction, there is a shortage of ……..
a) Acceptor ions
b) Holes and electrons
c) Donor ions
d) None of the above
Q25. A reverse bias pn junction has …………
a) Very narrow depletion layer
b) Almost no current
c) Very low resistance
d) Large current flow
Q26. A pn junction acts as a ……….
a) Controlled switch
b) Bidirectional switch
 c) Unidirectional switch
d) None of the above
Q27. A reverse biased pn junction has resistance of the order of
a) Ω
b) kΩ
c) MΩ
d) None of the above
Q28. The leakage current across a pn junction is due to …………..
a) Minority carriers
b) Majority carriers
c) Junction capacitance
d) None of the above
Q29. When the temperature of an extrinsic semiconductor is increased, the pronounced
effect is on……
a) Junction capacitance
b) Minority carriers
c) Majority carriers
d) None of the above
Q30. With forward bias to a pn junction , the width of depletion layer ………
a) Decreases
b) Increases
c) Remains the same
d) None of the above
Q31. The leakage current in a pn junction is of the order of
a) Aa
b) mA
c) kA
d) µA
Q32. In an intrinsic semiconductor, the number of free electrons ………
a) Equals the number of holes
b) Is greater than the number of holes
c) Is less than the number of holes
d) None of the above
Q33. At room temperature, an intrinsic semiconductor has ……….
a) Many holes only
b) A few free electrons and holes
c) Many free electrons only
d) No holes or free electrons
Q34. At absolute temperature, an intrinsic semiconductor has ……….
a) A few free electrons
b) Many holes
c) Many free electrons
d) No holes or free electrons
Q35. At room temperature, an intrinsic silicon crystal acts approximately as ……
a) A battery
b) A conductor
 c) An insulator
d) A piece of copper wire
Q36. Under normal conditions a diode conducts current when it is ……………
a) reverse biased
b) forward biased
c) avalanched
d) saturated
Q37. The term bias in electronics usually means ……….
a) the value of ac voltage in the signal.
b) the condition of current through a pn junction.
c) the value of dc voltages for the device to operate properly.
d) the status of the diode.