R1202x Series

STEP-UP DC/DC CONVERTER with SHUTDOWN FUNCTION

NO.EA-255-210322

OUTLINE
The R1202x Series are CMOS-based PWM step-up DC/DC converter ICs with low supply current.
Each of these ICs consists of an NMOS FET, NPN transistor, an oscillator, a PWM comparator, a voltage
reference unit, an error amplifier, a current limit circuit, an under voltage lockout circuit (UVLO), an over-voltage
protection circuit (OVP), a soft-start circuit, a Maxduty limit circuit, and a thermal shutdown protection circuit. By
simply using an inductor, a resistor, and capacitors as external components, a high-efficiency step-up DC/DC
converter can be easily configured. At the standby mode, a rectifier transistor can separate the output from the
input.
The R1202x Series include a thermal shut-down circuit and an under-voltage lockout circuit (UVLO) which
separate the output from the input to shut down the current when the overheat caused when the output is connected
to the Gnd is detected and also during the UVLO detection. As other protection functions, the R1202x Series
contain a cycle by cycle current limit circuit that limits the Lx peak current, and an over-voltage protection circuit
(OVP) that detects the output overvoltage.
The R1202x Series offer three versions: the R1202xxxxA/B versions, which are optimized for constant-voltage
power supply and the R1202xxxxD version, which is optimized to drive serial white LEDs with constant current.
While the R1202xxxxA version discharges the VOUT output to 0V at the shutdown, the R1202xxxxB version doesn’t.
The brightness of the white LEDs can be adjusted quickly by applying a PWM signal (200Hz to 300kHz) to the CE
pin.
The R1202x Series are available in DFN1616-6B and TSOT-23-6 packages.

FEATURES
• Input Voltage Range ......................................... 2.3V to 5.5V (R1202xxxxA/B)
1.8V to 5.5V (R1202xxxxD)
• Supply Current ................................................. Typ. 800µA
• Standby Current ............................................... Max. 5µA
• Feedback Voltage ............................................ 1.0V±15mV (R1202xxxxA/B)
0.2V±10mV (R1202xxxxD)
• Oscillator Frequency ........................................ Typ. 1.2MHz
• Maximum Duty Cycle ....................................... Typ. 91%
• UVLO Function ............................................... Typ.2.0V (Hys.Typ.0.2V) (R1202xxxxA/B)
Typ.1.6V (Hys.Typ.0.1V) (R1202xxxxD)
• Lx Current Limit Function ................................. Select from 350mA, 700mA
• Over Voltage Protection ................................... Select from 14V-23V (Refer the Selection Guide)
• LED dimming control for R1202xxxxD ............. by external PWM signal (Frequency 200Hz to 300kHz)
• Thermal Protection Function .......................... Typ.150ºC(Hys.Typ.50ºC)
• Built-in Auto Discharge Function ...................... R1202xxxxA
• NMOS ON Resistance ..................................... 1.35Ω
• Packages ......................................................... DFN1616-6B, TSOT-23-6

APPLICATION
• Constant Voltage Power Source for portable equipment
• OLED power supply for portable equipment
• White LED Backlight for portable equipment

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SELECTION GUIDE
The OVP threshold voltage, current limit, package and VFB/Auto discharge are user-selectable options.

Product Name Package Quantity per Reel Pb Free Halogen Free

R1202Lyz1∗-TR DFN1616-6B 5,000 pcs Yes Yes
R1202Nyz3∗-TR-FE TSOT-23-6 3,000 pcs Yes Yes

y : Designation of OVP threshold

(3) 14V : R1202xxxxA/B/D
(4) 17V : R1202xxxxA/B
(5) 19V : R1202xxxxA/B
(6) 21V : R1202xxxxA/B
(7) 23V : R1202xxxxA/B/D

z : Designation of current limit

(1) 350mA
(2) 700mA

∗ : Designation of VFB, auto discharge function

VFB Auto discharge

A 1.0V ○
B 1.0V ×
D 0.2V ×

Auto-discharge function quickly lowers the output voltage to 0V, when the chip enable signal is switched from the active mode
to the standby mode, by releasing the electrical charge accumulated in the external capacitor.

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BLOCK DIAGRAMS
R1202xxxxA

VFB VIN LX VOUT

Err. Amp. UVLO

PWM Comp.
+ Switch
+ Control
– R Q Driver
– S Control
vref
Oscillator OVP
Soft-start
Slope Com- Current Current Thermal
pensation Limit sense Shutdown

CE

CE GND

R1202xxxxB

VFB VIN LX VOUT

Err. Amp. UVLO

PWM Comp.
+ Switch
+ Control
– R Q Driver
– S Control
vref
Oscillator OVP
Soft-start
Slope Com- Current Current Thermal
pensation Limit sense Shutdown

CE

CE GND

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R1202xxxxD

VFB VIN LX VOUT

Err. Amp. UVLO

PWM Comp.
+ Switch
+ Control
– R Q Driver
– S Control
vref
Oscillator OVP
PWM
Cntrl
Slope Com- Current Current Thermal
EN pensation Limit sense Shutdown

Shutdown
delay ∑

CE

CE GND

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PIN DESCRIPTIONS
• DFN1616-6B • TSOT-23-6
Top View Bottom View 6 5 4

6 5 4 4 5 6

∗ (mark side)

1 2 3 3 2 1
1 2 3

DFN1616-6B
Pin No Symbol Pin Description
1 CE Chip Enable Pin ("H" Active)
2 VFB Feedback Pin
3 LX Switching Pin (Open Drain Output)
4 GND Ground Pin
5 VIN Input Pin
6 VOUT Output Pin

∗) The tab is substrate level (GND). The tab is better to be connected to the GND, but leaving it open is also acceptable.

TSOT-23-6
Pin No Symbol Pin Description
1 CE Chip Enable Pin ("H" Active)
2 VOUT Output Pin
3 VIN Input Pin
4 LX Switching Pin (Open Drain Output)
5 GND Ground Pin
6 VFB Feedback Pin

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ABSOLUTE MAXIMUM RATINGS (GND=0V)

Symbol Item Rating Unit
VIN VIN Pin Voltage -0.3 to 6.5 V
VCE CE Pin Voltage -0.3 to 6.5 V
VFB VFB Pin Voltage -0.3 to 6.5 V
VOUT VOUT Pin Voltage -0.3 to 25 V
VLX LX Pin Voltage -0.3 to 25 V
ILX LX Pin Current 1000 mA
DFN1616-6B
2400
PD Power Dissipation * (JEDEC STD. 51-7 Test Land Pattern) mW
TSOT-23-6 (Standard Test Land Pattern) 460
Tj Junction Temperature Range -40 to 125 °C
Tstg Storage Temperature Range -55 to 125 °C
∗) Refer to POWER DISSIPATION for detailed information.

ABSOLUTE MAXIMUM RATINGS

Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause permanent damage and
may degrade the life time and safety for both device and system using the device in the field. The functional operation at
or over these absolute maximum ratings is not assured.

RECOMMENDED OPERATING CONDITIONS

Symbol Item Rating Unit

R1202xxxxA/B 2.3 V to 5.5 V V
VIN Operating Input Voltage
R1202xxxxD 1.8 V to 5.5 V V
Ta Operating Temperature Range −40 to 85 °C

RECOMMENDED OPERATING CONDITIONS

All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended
operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions,
even if they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may
receive serious damage when they continue to operate over the recommended operating conditions.

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ELECTRICAL CHARACTERISTICS
R1202x (Ta=25°C)

Symbol Item Conditions Min. Typ. Max. Unit

IDD Supply Current VIN=5.5V , VFB=0V , LX at no load 0.8 1.2 mA
Istandby Standby Current VIN=5.5V , VCE=0V 1.0 5.0 µA
UVLO Detect R1202xxxxA/B 1.9 2.0 2.1 V
VUVLO1 VIN falling
Threshold Voltage R1202xxxxD 1.5 1.6 1.7 V
VUVLO1
R1202xxxxA/B 2.3 V
+0.2
VUVLO2 UVLO Release Voltage VIN rising
VUVLO1
R1202xxxxD 1.8 V
+0.1
VCEH CE Input Voltage "H" VIN=5.5V 1.5 V
VCEL CE Input Voltage "L" 0.5 V
CE Pull Down
RCE 1200 kΩ
Resistance
R1202xxxxA/B 0.985 1.000 1.015
VFB VFB Voltage Accuracy VCE=3.6V V
R1202xxxxD 0.19 0.2 0.21
VFB Voltage Temperature ppm/
∆VFB/∆Ta VCE=3.6V, -40°C <
= Ta <
= 85°C ±150
Coefficient °C
IFB VFB Input Current VIN=5.5V, VFB=0V or 5.5V -0.1 0.1 µA
tstart Soft-start Time *R1202xxxxA/B 2.0 ms
RON Driver ON Resistance VCE=3.6V, ILX=100mA 1.35 Ω
IOFF Driver Leakage Current VLX=22V 3.0 µA
R1202xx1xx 250 350 450
ILIM Driver Current Limit VIN=3.6V mA
R1202xx2xx 500 700 900
VF NPN Forward Voltage ILX=100mA 0.8 V
ISWOFF1 NPN Leakage Current 1 VOUT=22V, VLX=0V 10 µA
ISWOFF2 NPN Leakage Current 2 VOUT=0V, VLX=5.5V 3 µA
fosc Oscillator Frequency VIN=3.6V, VFB=0V 1000 1200 1400 kHz

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(Ta=25ºC)

Symbol Item Conditions Min. Typ. Max. Unit

Maxduty Maximum Duty Cycle VIN=3.6V, VFB=0V 86 91 %

R1202x3xxA/B/D 13.2 14 14.8
R1202x4xxA/B 16.2 17 17.8
VIN=3.6V,
VOVP1 OVP Detect Voltage R1202x5xxA/B 18.2 19 19.8 V
VOUT rising
R1202x6xxA/B 20.2 21 21.8
R1202x7xxA/B/D 22.2 23 23.8
VOVP1
R1202x3xxA/B/D
-1.1
VOVP1
R1202x4xxA/B
-1.3
VIN=3.6V, VOVP1
VOVP2 OVP Release Voltage R1202x5xxA/B V
VOUT falling -1.4
VOVP1
R1202x6xxA/B
-1.5
VOVP1
R1202x7xxA/B/D
-1.7
Thermal Shutdown
TTSD VIN=3.6V 150 °C
Detect Temperature
Thermal Shutdown
TTSR VIN=3.6V 100 °C
Release Temperature

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THEORY OF OPERATION

Operation of Step-Up DC/DC Converter and Output Current

<Basic Circuit>
i2

L Diode IOUT
VIN VOUT
i1

Lx Tr CL

GND

<Current through L>

Discontinuous mode Continuous mode

ILmax
IL IL

ILmax

ILmin
ILmin topen

t t

ton toff ton toff

T=1/fosc T=1/fosc

There are two operation modes of the step-up PWM control-DC/DC converter. That is the continuous mode and
discontinuous mode by the continuousness inductor.
When the transistor turns ON, the voltage of inductor L becomes equal to VIN voltage. The increase value of inductor
current (i1) will be

∆i1 = VIN × ton / L ........................................................................................................... Formula 1

As the step-up circuit, during the OFF time (when the transistor turns OFF) the voltage is continually supply from
the power supply. The decrease value of inductor current (i2) will be

∆i2 = (VOUT − VIN) × topen / L ........................................................................................... Formula 2

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At the PWM control-method, the inductor current become continuously when topen=toff, the DC/DC converter
operate as the continuous mode.

In the continuous mode, the variation of current of i1 and i2 is same at regular condition.

VIN × ton / L = (VOUT - VIN) × toff / L ................................................................................... Formula 3

The duty at continuous mode will be

duty (%)= ton / (ton + toff) = (VOUT - VIN) / VOUT ................................................................. Formula 4

The average of inductor current at tf = toff will be

IL(Ave.) = VIN × ton / (2 × L) ............................................................................................ Formula 5

If the input voltage = output voltage, the IOUT will be

IOUT = VIN2 × ton / (2 × L × VOUT) ....................................................................................... Formula 6

If the IOUT value is large than above the calculated value (Formula 6), it will become the continuous mode, at this
status, the peak current (ILmax) of inductor will be

ILmax = IOUT × VOUT / VIN + VIN × ton / (2 × L) .................................................................... Formula 7

ILmax = IOUT × VOUT / VIN + VIN × T × (VOUT - VIN) / (2 × L × VOUT)....................................... Formula 8

The peak current value is larger than the IOUT value. In case of this, selecting the condition of the input and the
output and the external components by considering of ILmax value.
The explanation above is based on the ideal calculation, and the loss caused by LX switch and the external
components are not included.
The actual maximum output current will be between 50% and 80% by the above calculations. Especially, when the
IL is large or VIN is low, the loss of VIN is generated with on resistance of the switch. Moreover, it is necessary to
consider Vf of the diode (approximately 0.8V) about VOUT.

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Soft-Start
R1202xxxxA/B
After inputting "H" to the CE pin, the error amplifier in the DC/DC converter starts from 0V and slowly rises with
a time (typ. 2ms) until the set output voltage is reached.
However, immediately after startup, (the input voltage (VIN) – NPN Forward voltage) is output without the soft
start control.

R1202xxxxD
By gradually increasing the duty of the PWM signal input to the CE pin, the LED current (luminance) can be
slowly increased in the same way as the soft start operation.

Protect Function
If the over current is detected, internal mosfet will turn-off soon. At the next operating period, mosfet will turn-on
again and continue to watch the current.
The UVLO function and the thermal shutdown function are turned off the NMOS-driver and NPN-transister when
the VIN decreases more than the UVLO detect threshold voltage or the inside of IC exceeds the thermal shutdown
detect temperature, and reset IC when the VIN rises more than the UVLO release voltage or the inside of IC falls
below the thermal shutdown release temperature, and restart the operation.

Shutdown
At standby mode, the output is completely separated from the input and shutdown by the NPN transistor of
internal IC. However, the leakage current is generated when the LX pin voltage is higher than VIN pin voltage at
standby mode.
R1202xxxxA (with auto discharge function): In the term of standby mode, the switch between VOUT to GND is
turned ON and output capacitor is discharged.

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APPLICATION INFORMATION
Typical Applications

L1
10µH~22µH
L1
10µH~22µH C1
1µF
C1
1µF C2
VIN LX 0.22µF
VIN LX

CE VOUT
CE VOUT C2
C3 1µF
R2
R3
GND GND VFB
VFB R1
R1 10Ω

R1202xxxxA/B R1202xxxxD

 Selection of Inductor
The peak current of the inductor at normal mode can be estimated as the next formula when the efficiency is 80%.

ILmax = 1.25 × IOUT × VOUT / VIN + 0.5 × VIN × (VOUT - VIN) / (L × VOUT × fosc)

In the case of start-up or dimming control by CE pin, inductor transient current flows, and the peak current of it
must be equal or less than the current limit of the IC. The peak current should not beyond the rated current of
the inductor. The recommended inductance value is 10µH -22µH.

Table 1 Peak current value in each condition

Condition
VIN (V) VOUT (V) IOUT (mA) L (µH) ILmax (mA)
3 14 20 10 215
3 14 20 22 160
3 21 20 10 280
3 21 20 22 225

Table 2 Recommended inductors

L (µH) Part No. Rated current (mA) Size (mm)
10 LQH32CN100K53 450 3.2x2.5x1.55
10 LQH2MC100K02 225 2.0x1.6x0.9
10 VLF3010A-100 490 2.8x2.6x0.9
10 VLS252010-100 520 2.5x2.0x1.0
10 VLF403212MT-100M 900 4.0×3.2×1.2
22 LQH32CN220K53 250 3.2x2.5x1.55
22 LQH2MC220K02 185 2.0x1.6x0.9
22 VLF3010A-220 330 2.8x2.6x0.9
22 VLF504015MT-220M 930 5.0×4.0×1.5

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 Selection of Capacitor
Set 1µF or more value bypass capacitor C1 between VIN pin and GND pin as close as possible.

R1202xxxxA/R1202xxxxB
Set 1µF – 4.7µF or more capacitor C2 between VOUT and GND pin.

Table 3-A Recommended components for R1202xxxxA/R1202xxxxB

Rated voltage(V) Part No.

C1 6.3 CM105B105K06
C2 25 GRM21BR11E105K
C3 25 22pF
R1 For VOUT Setting
R2 For VOUT Setting
R3 2kΩ

If the transient drop of output voltage by the load fluctuation is large and exceeds the allowable range in above
setting, refer to Table 3-B to change the capacitors of C2 and C3 for the response improvement and the transient
voltage drop reduction.

Table 3-B Recommended components for R1202xxxxA/R1202xxxxB

Rated voltage(V) Part No.

C1 6.3 CM105B105K06
C2 50 GRM31CR71H475M
C3 25 220pF
R1 For VOUT Setting
R2 For VOUT Setting
R3 2kΩ

R1202xxxxD
Set 0.22µF or more capacitor C2 between VOUT and GND pin.
The rated voltage of C2 should be 25V or more.

Table 4 Recommended components for R1202xxxxD

Rated voltage(V) Part No.
C1 6.3 CM105B105K06
C2 25 GRM21BR11E224

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 External Components Setting

If the spike noise of VOUT may be large for R1202xxxxA/B, the spike noise may be picked into VFB pin and make
the operation unstable. In this case, use a R3 of the resistance value in the range from 1kΩ to 5kΩ to reduce a
noise level of VFB.

 The Method of Output Voltage Setting (R1202xxxxA/B)

The output voltage (VOUT) can be calculated with divider resistors (R1 and R2) values as the following formula:

Output Voltage (VOUT) = VFB × (R1 + R2) / R1

The total value of R1 and R2 should be equal or less than 300kΩ. Make the VIN and GND line sufficient. The
large current flows through the VIN and GND line due to the switching. If this impedance (VIN and GND line) is
high, the internal voltage of the IC may shift by the switching current, and the operating may become unstable.
Moreover, when the built-in LX switch is turn OFF, the spike noise caused by the inductor may be generated. As
a result of this, recommendation voltage rating of capacitor (C2) value is equal 1.5 times larger or more than the
setting output voltage.

 LED Current setting (R1202xxxxD)

When CE pin input is "H" (Duty=100%), LED current can be set with feedback resistor (R1)

ILED = VFB / R1

 LED Dimming Control (R1202xxxxD)

The LED brightness can be controlled by inputting the PWM signal to the CE pin. If the CE pin input is "L" in the
fixed time (Typ.0.5ms), the IC becomes the standby mode and turns OFF LEDs.
The current of LEDs can be controlled by Duty of the PWM signal of the input CE pin. The current of LEDs when
High-Duty of the CE input is "Hduty" reaches the value as calculatable following formula.

ILED = Hduty × VFB / R1

The frequency of the PWM signal is using the range between 200Hz to 300kHz.
When controlling the LED brightness by the PWM signal of 20kHz or less, the increasing or decreasing of the
inductor current might be make a sounds in the hearable sound wave area. In that case, please use the PWM
signal in the high frequency area.

CE
Hduty
VFB
R1

Dimming control by CE pin input

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 ILED accuracy (R1202xxxxD)

LED current (ILED) is affected by the offset voltage of the error amplifier in the DC/DC converter.
LED might turn off due to the offset voltage variation, when brightness is controlled by low PWM duty cycle.
It is recommended to input PWM signal with 10% or more duty cycle to prevented LED turn off(Ta=25℃).
The table below shows the ILED accuracy at low PWM duty cycle input (low brightness).

ILED accuracy when low PWM Duty is applied (R1 = 10 Ω)

PWM Duty applied to CE Pin ILED Min. ILED Max.
10% (Frequency = 20kHz to 300kHz) 0.1mA (1) 5.1mA(1)

(1) Design guaranteed value (Ta = 25 ºC)

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TECHNICAL NOTES
 Current Path on PCB
The current paths in an application circuit are shown in Fig. 1 and 2.
A current flows through the paths shown in Fig. 1 at the time of MOSFET-ON, and shown in Fig. 2 at the time of
MOSFET-OFF. In the paths pointed with red arrows in Fig. 2, current flows just in MOSFET-ON period or just in
MOSFET-OFF period. Parasitic impedance / inductance and the capacitance of these paths influence stability of
the system and cause noise outbreak. So please minimize this side effect. In addition, please shorten the wiring of
other current paths shown in Fig. 1 and 2 except for the paths of LED load.

 Layout Guide for PCB

⋅ Please shorten the wiring of the input capacitor (C1) between VIN pin and GND pin of IC. The GND pin should be
connected to the strong GND plane.

⋅ The area of LX land pattern should be smaller.

⋅ Please put output capacitor (C2) close to the VOUT pin.

⋅ Please make the GND side of output capacitor (C2) close to the GND pin of IC.
Load

Load
Fig. 1 MOSFET-ON Fig. 2 MOSFET-OFF

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 PCB Layout

・PKG:DFN1616-6B pin
R1202LxxxA/R1202LxxxB/R1202LxxxD typical board layout
Top Layer Back Layer

・PKG: TSOT-23-6 pin

R1202NxxxA/R1202NxxxB/R1202NxxxD Typical Board Layout
Top Layer Back Layer

U1-● indicates the position of No.1 pin.

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TYPICAL CHARACTERISTICS
1) Efficiency vs. Output Current (R1202N723A)
VOUT=10V, L=10µH (LQH32CN100K53) VOUT=10V, L=22µH (LQH32CN220K53)
90 90

85 85

80 80
Efficiency (%)

Efficiency (%)
75 75

70 70

65 Vin=3V 65 Vin=3V
60 Vin=3.6V 60 Vin=3.6V
Vin=4.2V Vin=4.2V
55 Vin=5V 55 Vin=5V
50 50
0 5 10 15 20 0 5 10 15 20
Output Current (mA) Output Current (mA)

VOUT=15V, L=10µH(LQH32CN100K53) VOUT=15V, L=22µH (LQH32CN220K53)

90 90

85 85
80 80
Efficiency (%)

Efficiency (%)

75 75
70 70

65 Vin=3V 65 Vin=3V
Vin=3.6V Vin=3.6V
60 60 Vin=4.2V
Vin=4.2V
55 Vin=5V 55 Vin=5V

50 50
0 5 10 15 20 0 5 10 15 20
Output Current (mA) Output Current (mA)

VOUT=20V, L=10µH (LQH32CN100K53) VOUT=20V, L=22µH (LQH32CN220K53)

90 90
85 85
80 80
Efficiency (%)

Efficiency (%)

75 75
70 70
65 Vin=3V 65 Vin=3V
Vin=3.6V Vin=3.6V
60 60
Vin=4.2V Vin=4.2V
55 Vin=5V 55 Vin=5V
50 50
0 5 10 15 20 0 5 10 15 20
Output Current (mA) Output Current (mA)

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VOUT=20V, VIN=3.6V
85

80

75
Efficiency (%)

70

65
LQH32CN100k53L(3.2×2.5×1.55)
60
VLF3010AT-100MR33(3.0×2.8×1.0)
55 LQH2MCN100K02(2.0×1.6×0.9)

50
0 5 10 15 20
Output Current (mA)

2) Efficiency vs. Output Current (R1202N713D)

4LED, L=10µH (LQH32CN100K53) 4LED, L=22µH (LQH32CN220K53)
90 90

85 85

80 80
Efficiency (%)

Efficiency (%)

75 75

70 70

65 65
Vin=3V
60 Vin=3.6V Vin=3V
60
Vin=4.2V Vin=3.6V
55 Vin=5V 55 Vin=4.2V
Vin=5V
50 50
0 5 10 15 20 0 5 10 15 20
Output Current ILED (mA) Output Current ILED (mA)

5LED, L=10µH (LQH32CN100K53) 5LED, L=22µH (LQH32CN220K53)

90 90
85 85
80 80
Efficiency (%)

Efficiency (%)

75 75
70 70
65 65
60 Vin=3V Vin=3V
60
Vin=3.6V Vin=3.6V
55 Vin=4.2V 55 Vin=4.2V
Vin=5V Vin=5V
50 50
0 5 10 15 20 0 5 10 15 20
Output Current ILED (mA) Output Current ILED (mA)

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3) Efficiency vs. Output Current (R1202N713D)

5LED, VIN=3.6V
85

80

75
Efficiency (%)

70

65

60
LQH32CN100k53L(3.2×2.5×1.55)
55 VLF3010AT-100MR33(3.0×2.8×1.0)
LQH2MCN100K02(2.0×1.6×0.9)
50
0 5 10 15 20
Output Current ILED (mA)

4) Output Voltage vs. Output Current (R1202N723A)

VOUT=10V, L=10µH (LQH32CN100K53) VOUT=10V, L=22µH (LQH32CN220K53)
10.8 10.8
Vin=3V Vin=3V
10.6 Vin=3.6V 10.6 Vin=3.6V
Vin=4.2V Vin=4.2V
Output Voltage (V)

Output Voltage (V)

10.4 Vin=5V 10.4 Vin=5V

10.2 10.2

10 10

9.8 9.8

9.6 9.6
0 50 100 150 200 0 50 100 150 200
Output Current (mA) Output Current (mA)

VOUT=15V, L=10µH (LQH32CN100K53) VOUT=15V, L=22µH (LQH32CN220K53)

16.4 16.4
Vin=3V Vin=3V
16 Vin=3.6V 16 Vin=3.6V
Vin=4.2V Vin=4.2V
Output Voltage (V)

Output Voltage (V)

15.6 Vin=5V 15.6 Vin=5V

15.2 15.2

14.8 14.8

14.4 14.4

14 14
0 30 60 90 120 0 30 60 90 120
Output Current (mA) Output Current (mA)

20
 R1202x
NO.EA-255-210322

VOUT=20V, L=10µH (LQH32CN100K53) VOUT=20V, L=22µH (LQH32CN220K53)

21.2 21.2
Vin=3V Vin=3V
20.9 Vin=3.6V 20.9 Vin=3.6V
Vin=4.2V Vin=4.2V
Output Voltage (V)

Output Voltage (V)

20.6 Vin=5V 20.6 Vin=5V

20.3 20.3

20 20

19.7 19.7

19.4 19.4
0 25 50 75 100 0 20 40 60 80 100
Output Current (mA) Output Current (mA)

VOUT=20V, VIN=3.6V
20.5

20.3
Output Voltage (V)

20.1

19.9

LQH32CN100k53L (3.2×2.5×1.55)
19.7
VLF3010AT-100MR33 (2.8×2.6×0.9)
LQH2MCN100K02 (2.0×1.6×0.9)
19.5
0 10 20 30 40 50
Output Current (mA)

5) Maxduty vs. ILED 6) OVP Output Waveform

R1202N713D R1202N713D
25 25

20 24
Output Voltage (V)

15
ILED (mA)

23

10 22
200Hz

5 10kHz
21
300kHz
0
20
0 20 40 60 80 100
-50 -30 -10 10 30 50
Duty (%) Time (ms)

21
 R1202x
NO.EA-255-210322

7) Waveform (5LED)
R1202N713D (CE Freq=200Hz) R1202N713D (CE Freq=10KHz)
20 55 20 55

40 40
15 15

Output Voltage (V)

Output Voltage (V)

25 25

CE Voltage (V)
CE Voltage (V)

10 10

ILED (mA)
ILED (mA)
10 10
5 5
-5 -5

0 0
-20 -20
Vout CE ILED Vout CE ILED
-5 -35 -5 -35
-10 -5 0 5 10 -500 -250 0 250 500
Time (ms) Time (µs)

R1202N713D (CE Freq=300KHz) 8) Diode Forward Voltage vs. Temperature

20 55 0.95
0.90
40
Diode Forward Voltage (V)

15 0.85
Output Voltage (V)

25 0.80
CE Voltage (V)

10
ILED (mA)

0.75
10
0.70
5
-5 0.65
0.60
0
-20 0.55
Vout CE ILED
0.50
-5 -35
-40 -15 10 35 60 85
-1 -0.5 0 0.5 1
Time [µs] Temperature Ta (°C)

9) Standby Current vs. Temperature 10) Supply Current lin vs. Temperature
1000
900
1.0
800
Supplay Current Iin[µA]

0.8 700
Standby Current(uA)

600
0.6 500
400
0.4
300

0.2 200
100
0.0 0
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature Ta(°C) Temperature Ta (°C)

22
 R1202x
NO.EA-255-210322

11) UVLO Voltage vs. Temperature

R1202xxxxA/B R1202xxxxD
2.25 1.75
2.20
1.70
2.15
UVLO Voltage (V)

UVLO Voltage(V)
1.65
2.10
2.05 1.60
2.00
1.55
1.95
1.50
1.90

1.85 1.45
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature Ta (°C) Temperature Ta (°C)

12) VFB Voltage vs. Temperature

R1202xxxxA/B R1202xxxxD
1.050 0.210
0.208
1.030 0.206
0.204
VFB Voltage (V)
VFB Voltage (V)

0.202
1.010
0.200
0.198
0.990
0.196
0.194
0.970
0.192
0.190
0.950 -40 -15 10 35 60 85
-40 -15 10 35 60 85
Temperature Ta (°C)
Temperature Ta (°C)

13) Switch ON Resistance RON vs. Temperature 14) OVP Voltage vs. Temperature
R1202x7xxx
1.9 25
Switch On Resistance RON (Ω)

1.7 24
1.5
OVP Voltage (V)

23
1.3
22 OVP Detect
1.1
21
0.9
OVP Release
0.7 20

0.5 19
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature Ta (°C) Temperature Ta (°C)

23
 R1202x
NO.EA-255-210322

15) Lx Limit Current vs. Temperature

R1202xx1xx R1202xx2xx
500 900

Vin=2.8V 850 Vin=2.8V

450
Vin=3.6V 800 Vin=3.6V

Lx Limit Current (mA)

Lx Limit Current (mA)

400 Vin=5.5V Vin=5.5V

750

350 700
650
300
600
250
550

200 500
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature Ta (°C) Temperature Ta (°C)

16) Frequency Fosc vs. Temperature 17) MaxDuty vs. Temperature

1400 100

1350 Vin=1.8V 98 Vin=1.8V

Vin=3.6V Vin=3.6V
Frequency Fosc (kHz)

1300 96
Vin=5.5V Vin=5.5V
MXDUTY (%)

1250 94
1200 92
1150 90
1100 88
1050 86
1000 84
-40 -15 10 35 60 85 -40 -15 10 35 60 85
Temperature Ta (°C) Temperature Ta (°C)

18) Thermal Shutdown Detect / Release Temperature vs. Input Voltage

200

180
Thermal Shutdown Detect
160
Temperature (°C)

140

120
Thermal Shutdown Release
100

80

60
1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VIN (V)

24
 R1202x
NO.EA-255-210322

19) Inductor Current (output-GND short)

5LED(VIN=3V) 5LED(VIN=3V)
R1202N713D R1202N723D
0.5 1
0.45 0.9
IL IL
0.4 0.8
Inductor Current (A)

Inductor Current (A)

0.35 0.7
0.3 0.6
0.25 0.5
0.2 0.4
0.15 0.3
0.1 0.2
0.05 0.1
0 0
-5 -4 -3 -2 -1 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5
TIme (µs) TIme (µs)

5LED(VIN=3.6V) 5LED(VIN=3.6V)
R1202N713D R1202N723D
0.5 1
0.45 IL 0.9 IL
0.4 0.8
Inductor Current (A)

0.35 0.7
Inductor Current (A)

0.3 0.6
0.25 0.5
0.2 0.4
0.15 0.3
0.1 0.2
0.05 0.1
0 0
-5 -4 -3 -2 -1 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5
TIme (µs) TIme (µs)

5LED(VIN=4.2V) 5LED(VIN=4.2V)
R1202N713D R1202N723D
0.5 1
0.45 IL 0.9 IL
0.4 0.8
Inductor Current (A)

Inductor Current (A)

0.35 0.7
0.3 0.6
0.25 0.5
0.2 0.4
0.15 0.3
0.1 0.2
0.05 0.1
0 0
-5 -4 -3 -2 -1 0 1 2 3 4 5 -5 -4 -3 -2 -1 0 1 2 3 4 5
TIme (µs) TIme (µs)

25
 R1202x
NO.EA-255-210322

20) Load Transient Response

VIN = 3.6 V, VOUT = 15 V IOUT = 0 mA ⇔ 30 mA

L = 10 µH Setting：Table 3-A

L = 22 µH Setting：Table 3-A

L =10 µH Setting：Table 3-B

26
 R1202x
NO.EA-255-210322

L = 22 µH Setting：Table 3-B

27
POWER DISSIPATION DFN1616-6B
Ver. A

The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following measurement conditions are based on JEDEC STD. 51-7.

Measurement Conditions
Item Measurement Conditions
Environment Mounting on Board (Wind Velocity = 0 m/s)
Board Material Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm
Outer Layer (First Layer): Less than 95% of 50 mm Square
Copper Ratio Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Outer Layer (Fourth Layer): Approx. 100% of 50 mm Square
Through-holes φ 0.2 mm × 15 pcs

Measurement Result (Ta = 25°C, Tjmax = 125°C)

Item Measurement Result
Power Dissipation 2400 mW
Thermal Resistance (θja) θja = 41°C/W
Thermal Characterization Parameter (ψjt) ψjt = 11°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter

3000

2500 2400
Power Dissipation PD (mW)

2000

1500

1000

500

0
0 25 50 75 85 100 125
Ambient Temperature (°C)

Power Dissipation vs. Ambient Temperature Measurement Board Pattern

i
PACKAGE DIMENSIONS DFN1616-6B
Ver. A

1.60 B 1.30±0.05
A

(3X0.15)
4 6

X4
0.05

0.70±0.05
∗

0.25±0.05
1.60

INDEX
3 1
0.5
0.4max.
0.1±0.05

0.20±0.05
0.05 M AB

Bottom View

0.05 S
S

DFN1616-6B Package Dimensions (Unit: mm)

*

∗ The tab on the bottom of the package shown by blue circle is a substrate potential (GND). It is recommended that this
tab be connected to the ground plane pin on the board but it is possible to leave the tab floating.
i
POWER DISSIPATION TSOT-23-6
Ver. A

The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.

Measurement Conditions
Item Standard Test Land Pattern
Environment Mounting on Board (Wind Velocity = 0 m/s)
Board Material Glass Cloth Epoxy Plastic (Double-Sided Board)
Board Dimensions 40 mm × 40 mm × 1.6 mm
Top Side: Approx. 50%
Copper Ratio
Bottom Side: Approx. 50%
Through-holes φ 0.5 mm × 44 pcs

Measurement Result (Ta = 25°C, Tjmax = 125°C)

Item Standard Test Land Pattern
Power Dissipation 460 mW
Thermal Resistance (θja) θja = 217°C/W
Thermal Characterization Parameter (ψjt) ψjt = 40°C/W
θja: Junction-to-Ambient Thermal Resistance
ψjt: Junction-to-Top Thermal Characterization Parameter

600

500
460
Power Dissipation PD (mW)

400

300

200

100

0
0 25 50 75 85 100 125
Ambient Temperature (°C)

Power Dissipation vs. Ambient Temperature Measurement Board Pattern

i
PACKAGE DIMENSIONS TSOT-23-6
Ver. A

0.4±0.2
2.9±0.2 +0.100
0.125-0.025
6 5 4

1.6-0.1
+0.2

2.8±0.2
1 2 3 +0.10
0.95 0.4-0.05
0.12 M
0∼15°
0.85±0.10

0 ∼ 0.1

S 0.10 S

TSOT-23-6 Package Dimensions (Unit: mm)

 1. The products and the product specifications described in this document are subject to change or discontinuation of
production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer
to our sales representatives for the latest information thereon.
2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written
consent of our company.
3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
taking out of your country the products or the technical information described herein.
4. The technical information described in this document shows typical characteristics of and example application circuits
for the products. The release of such information is not to be construed as a warranty of or a grant of license under
our company's or any third party's intellectual property rights or any other rights.
5. The products listed in this document are intended and designed for use as general electronic components in standard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and
reliability, for example, in a highly specific application where the failure or misoperation of the product could result in
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are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from
such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy
feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or
damage arising from misuse or inappropriate use of the products.
7. Anti-radiation design is not implemented in the products described in this document.
8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristics in the evaluation stage.
9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristics of the products under operation or storage.
10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case
of recognizing the marking characteristic with AOI, please contact our sales or our distributor before attempting to use
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11. Please contact our sales representatives should you have any questions or comments concerning the products or
the technical information.

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