Ion Implantation
Ion Implantation
Ion Implantation
VLSI Technology
Dr. T. R. Lenka
Department of Electronics & Communication Engineering
National Institute of Technology Silchar
Ion Implantation
The material engineering process by which ions of a
material are accelerated in an electrical field and
impacted into a solid. By which physical, chemical, or
electrical properties of the solid can be altered. It is
similar to diffusion (not same).
Diffusion vs Ion Implantation
Fig:Nuclear and electronic components of the ion stopping power as a function of ion
velocity. The quantity v0 is the Bohr velocity, and Zl is the ion atomic number.
Stopping Energies
Sn= = N ∫0Tmax T dσ
Sn : Total nuclear stopping power.
N:Target atoms/unit volume.
dσ :Differential cross section.
Tmax: Maximum transferable energy in collisions.
T: Energy lost by the incoming ion
The theoretical modelling of the Electron stopping is quite
complex, but in low energy regime it is similar to a viscous
drag force and is proportional to the ion velocity.
Fig: Schematic views of the ion range. (a) The total path length R is longer than the
projected Rp. (b) The stopped atom distribution is two-dimensional Gaussian.
Range Distributions Cont…
n0 :peak concentration=
Fig:Boron implanted atom distributions, comparing measured data points with four-
moment (Pearson IV) and Gaussian fitted distributions. The boron was implanted into
amorphous silicon without annealing.
Channeling
❖The objective of Channeling is to add tail to atom distributions
Fig:Oxygen recoils from the implantation of arsenic through an oxide layer. Solid lines are
from Boltzmann calculations. Dashed lines indicate the two exponential regions of the
recoil distribution.
Implanter Equipment
0 to 175
kV
2 Integrator
90o Q
analyzing
magnet 3
Focus
Acceleration 5
tube
Ion y-axis
1 scanner 4 x-axis
souce 25 kV scanner Wafer in process chamber
ANODE MAGNET
lattice and collides with atoms FILAMENT
CATHODE
and interacts with electrons. SOURCE OF
ELEMENT MAGNET
ANODE MAGNET
TARGET
Implant Uniformity
Fig: Sheet resistance maps of three samples implanted with 50 keV phosphours as
a function of dose: (a) 5 x 1013 cm-2, (b) 2 x 1014 cm-2, (c) 2 x 1015 cm-2.
Annealing
μ : mobility,
n : number of carriers, and
xj :junction depth.
❖ The implanted
impurity profile can
be approximated by
the Gaussian
distribution
function.
❖ For an implant
contained within
silicon:
Q = (2π)0.5 NP RP
Model for Ion Implantation Cont…
❖ Range of impurities in Si
1.0 B
As
Projected range (mm)
Sb
0.1
Rp
0.01
10 100 1000
Acceleration energy (keV)
Model for Ion Implantation Cont…
❖ Straggle of impurities in Si
0.10
Normal and transverse straggle
Sb
B
(mm)
P
0.01
As
Rp
R
0.002
10 100 1000
Acceleration energy (keV)
SiO2 as a Barrier
❖ SiO2 serves as an excellent barrier against ion-implantation
SiO2 Silicon
Np
NB
N(X0)
0 Rp X0
Depth, x
SiO2 as a Barrier Cont…
❖ The minimum oxide thickness for selective implantation:
❖ Xox = RP + RP (2 ln(10NP/NBulk))0.5
❖ An oxide thickness equal to the projected range plus six times
the straggle should mask most ion implants.
❖ A silicon nitride barrier layer needs only be 85% of the
thickness of an oxide barrier layer.
❖ Metals are of such a high density that even a very thin layer
will mask most implantations.
Profile Control
❖ Various shapes of profiles can be created by varying the
energy of the incident beam
NITROGEN CONCENTRATION (ATOMIC PERCENT)
FINAL PROFILE
15
200 KILOELECTRON
VOLTS
10 100
50
10 20
5
0
0 50 100 150 200 250 300 350
DEPTH (NANOMETERS)
Radiation Damage
1016
B
1015
P
1014 Sb
1013
0 1 2 3 4 5 6 7 8 9 10
Temperature, 1000/T (K-1)
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