ME35N06 Matsuki

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ME35N06/ME35N06-G

N-Channel 60-V (D-S) MOSFET

GENERAL DESCRIPTION FEATURES


The ME35N06-G is the N-Channel logic enhancement mode power ● RDS(ON)≦32mΩ@VGS=10V
● RDS(ON)≦40mΩ@VGS=4.5V
field effect transistors, using high cell density, DMOS trench
● Super high density cell design for extremely low RDS(ON)
technology. This high density process is especially tailored to
● Exceptional on-resistance and maximum DC current
minimize on state resistance. These devices are particularly suited
capability
for low voltage application such as cellular phone, notebook
APPLICATIONS
computer power management and other battery powered circuits,
● Power Management in Note book
and low in-line power loss that are needed in a very small outline
● DC/DC Converter
surface mount package. ● Load Switch
● LCD Display inverter

PIN CONFIGURATION

(TO-252-3L)
Top View

The Ordering Information: ME35N06/ME35N06-G (Green product-Halogen free)

Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)

Parameter Symbol Maximum Ratings Unit


Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
TC=25℃ 25.4
Continuous Drain Current ID A
TC=70℃ 23.4
Pulsed Drain Current IDM 101 A
TC=25℃ 33
Maximum Power Dissipation PD W
TC=70℃ 21
Operating Junction Temperature TJ -55 to 150 ℃
Thermal Resistance-Junction to Case * RθJC 3.8 ℃/W

2
The * * The device mounted on 1in FR4 board with 2 oz copper
DCC
正式發行

Aug,2016-Ver1.3 01
ME35N06/ME35N06-G
N-Channel 60-V (D-S) MOSFET
Electrical Characteristics (TC =25℃ Unless Otherwise Specified)

Symbol Parameter Limit Min Typ Max Unit


STATIC
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 V
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 3 V
IGSS Gate Leakage Current VDS=0V, VGS=±20V ±100 nA
IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V 1 μA

VGS=10V, ID= 20A 27 32


a
RDS(ON) Drain-Source On-Resistance mΩ
VGS=4.5V, ID= 16A 34 40
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1.2 V
DYNAMIC
Qg Total Gate Charge VDS=30V, VGS=10V, ID=20A 23
Qg Total Gate Charge 12
nC
Qgs Gate-Source Charge VDS=30V, VGS=4.5V, ID=20A 4.8
Qgd Gate-Drain Charge 6.2
Ciss Input Capacitance 885
VDS=15V, VGS=0V,
Coss Output Capacitance 98 pF
f=1MHz
Crss Reverse Transfer Capacitance 30
td(on) Turn-On Delay Time 12
tr Turn-On Rise Time VDS=30V, RL =1.5Ω, 8
ns
td(off) Turn-Off Delay Time VGEN=10V, RG=3Ω 43
tf Turn-Off Fall Time 4
Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%,Guaranteed by design, not subject to production testing.
b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.

DCC
正式發行

Aug,2016-Ver1.3 02
ME35N06/ME35N06-G
N-Channel 60-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)

DCC
正式發行

Aug,2016-Ver1.3 03
ME35N06/ME35N06-G
N-Channel 60-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)

DCC
正式發行

Aug,2016-Ver1.3 04
ME35N06/ME35N06-G
N-Channel 60-V (D-S) MOSFET

TO252-3L Package Outline

TO-252 Package Outline

SYMBOL MIN MAX


A 2.10 2.50
B 0.40 0.90
C 0.40 0.90
D 5.30 6.30
D1 2.20 2.90
E 6.30 6.75
E1 4.80 5.50
L1 0.90 1.80
L2 0.50 1.10
L3 0.00 0.20
H 8.90 10.40
P 2.30 BSC

DCC
正式發行

Aug,2016-Ver1.3 05

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