KHX1866C9D3 4G
KHX1866C9D3 4G
KHX1866C9D3/4G
4GB 512M x 64-Bit DDR3-1866
CL9 240-Pin DIMM
SPECIFICATIONS
CL(IDD) 9 cycles
Row Cycle Time (tRCmin) 49.5ns (min.)
Refresh to Active/Refresh 160ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 36ns (min.)
Maximum Operating Power 2.400 W*
UL Rating 94 V - 0
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
*Power will vary depending on the SDRAM used.
DESCRIPTION FEATURES
This document describes Kingston's 512M x 64-bit (4GB) • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
DDR3-1866 CL9 SDRAM (Synchronous DRAM), 2Rx8 memory
• VDDQ = 1.5V (1.425V ~ 1.575V)
module, based on sixteen 256M x 8-bit FBGA components. This
module has been tested to run at DDR3-1866 at a low latency • 667MHz fCK for 1333Mb/sec/pin
Continued >>
MODULE DIMENSIONS
T E C H N O L O G Y
18.80
15.80
11.00
8.00
0.00
0.00
54.70
All Kingston products are tested to meet our published specifications. Some motherboards or system configurations may not operate at
the published HyperX memory speeds and timing settings. Kingston does not recommend that any user attempt to run their computers
faster than the published speed. Overclocking or modifying your system timing may result in damage to computer components.