The document contains 6 numerical problems involving calculating voltages in transistor circuits. Problem 1 involves finding labeled voltages V6 and V7 in a circuit with given transistor parameters. Problem 2 involves calculating the value of resistor R required to set a current of 0.2 mA and then finding W2 and new R2 for transistor Q2 to operate in saturation. Problem 3 asks to find labeled node voltages in a circuit with given NMOS transistor parameters. Problems 4 and 5 involve calculating drain and gate voltages VD and VG for transistors with given parameters. Problem 6 asks to find source, drain, and drain-source voltages for two cases with different transistor parameters.
The document contains 6 numerical problems involving calculating voltages in transistor circuits. Problem 1 involves finding labeled voltages V6 and V7 in a circuit with given transistor parameters. Problem 2 involves calculating the value of resistor R required to set a current of 0.2 mA and then finding W2 and new R2 for transistor Q2 to operate in saturation. Problem 3 asks to find labeled node voltages in a circuit with given NMOS transistor parameters. Problems 4 and 5 involve calculating drain and gate voltages VD and VG for transistors with given parameters. Problem 6 asks to find source, drain, and drain-source voltages for two cases with different transistor parameters.
The document contains 6 numerical problems involving calculating voltages in transistor circuits. Problem 1 involves finding labeled voltages V6 and V7 in a circuit with given transistor parameters. Problem 2 involves calculating the value of resistor R required to set a current of 0.2 mA and then finding W2 and new R2 for transistor Q2 to operate in saturation. Problem 3 asks to find labeled node voltages in a circuit with given NMOS transistor parameters. Problems 4 and 5 involve calculating drain and gate voltages VD and VG for transistors with given parameters. Problem 6 asks to find source, drain, and drain-source voltages for two cases with different transistor parameters.
The document contains 6 numerical problems involving calculating voltages in transistor circuits. Problem 1 involves finding labeled voltages V6 and V7 in a circuit with given transistor parameters. Problem 2 involves calculating the value of resistor R required to set a current of 0.2 mA and then finding W2 and new R2 for transistor Q2 to operate in saturation. Problem 3 asks to find labeled node voltages in a circuit with given NMOS transistor parameters. Problems 4 and 5 involve calculating drain and gate voltages VD and VG for transistors with given parameters. Problem 6 asks to find source, drain, and drain-source voltages for two cases with different transistor parameters.
In the circuit shown, transistor is characterized by |Vt|= 2 V, kp’(W/L) =
1 mA/V2 and λ=0. Find the labeled voltages V6 and V7. Assume no channel length modulation. Numerical 2 Consider the circuit of Fig. E4.12. Let Q1 and Q2 have V, = 0.6 V,µnCox = 200 µA/V2 and λ = 0. , L1 = L2 = 0.8 µm, W1 = 8 µm, (a) Find the value of R required to establish a current of 0.2 mA in Q1 . (b) Find W2 and a new value for R2 so that Q2 operates in the saturation region with a current of 0.5 mA and a drain voltage of IV. NUMERICAL 3 For the circuit shown, find the labelled node voltages. The NMOS transistors have Vt = 1 V, kn’(W/L) =2 mA/V2. Assume no channel length modulation. NUMERICAL 4 10 MΩ, RD= 10KΩ, and VDD =10V. For • For the circuit shown in Fig. let RG= each of the following two transistors, find the voltages VD and VG. (a) Vt =1V, kn' (W/L) = 0.5 mA/V2 NUMERICAL 5 10 MΩ, RD= 10KΩ, and VDD =10V. For • For the circuit shown in Fig. let RG= each of the following two transistors, find the voltages VD and VG. (a) Vt =1V, kn' (W/L) = 0.5 mA/V2
(b) Vt =2V, kn' (W/L) = 1.25 mA/V2 (Home Work)
NUMERICAL (Homework) • For the circuit shown in Fig. with I =1ma, RG= 0, RD= 5KΩ,and VDD =10V, consider the behaviour in each of the following two cases. In each case, find voltages VS , VD and VDS. (a) Vt =1V, kn' (W/L) = 0.5 mA/V2 (b) Vt =2V, kn' (W/L) =1.25 mA/V2