Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

September 2010

FDMS3604S
Dual N-Channel PowerTrench MOSFET
N-Channel: 30 V, 30 A, 6.8 m N-Channel: 30 V, 40 A, 2.6 m
Features
Q1: N-Channel Max rDS(on) = 6.8 m at VGS = 10 V, ID = 13 A Max rDS(on) = 9.8 m at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 m at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant

General Description
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.

Applications
Computing Communications General Purpose Point of Load Notebook VCORE

G1

D1

D1

D1

D1 PHASE (S1/D2) G2 S2 S2 Top Power 56

S2 S2 S2

5 6 7 8

Q2

4 D1 3 D1 2 D1
Q1

PHASE

S2 Bottom

G2

1 G1

MOSFET Maximum Ratings TA = 25 C unless otherwise noted

Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current ID -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation for Single Operation Power Dissipation for Single Operation Operating and Storage Junction Temperature Range TA = 25 C TA = 25 C (Note 3) TC = 25 C TC = 25 C TA = 25 C Q1 30 20 30 60 131a 40 404 2.21a 1.01c Q2 30 20 40 130 231b 100 1125 2.51b 1.01d mJ W C A Units V V

-55 to +150

Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case 571a 1251c 3.5 501b 1201d 2 C/W

Package Marking and Ordering Information

Device Marking 22CA N7CC Device FDMS3604S Package Power 56
1

Reel Size 13

Tape Width 12 mm

Quantity 3000 units

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2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25 C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current, Forwad ID = 250 A, VGS = 0 V ID = 1 mA, VGS = 0 V ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS= 0 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 30 15 12 1 500 100 100 V mV/C A A nA nA

On Characteristics
VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250 A VGS = VDS, ID = 1 mA ID = 250 A, referenced to 25 C ID = 10 mA, referenced to 25 C VGS = 10 V, ID = 13 A VGS = 4.5 V, ID = 11 A VGS = 10 V, ID = 13 A , TJ = 125 C VGS = 10 V, ID = 23 A VGS = 4.5 V, ID = 21 A VGS = 10 V, ID = 23 A , TJ = 125 C VDS = 5 V, ID = 13 A VDS = 5 V, ID = 23 A Q1 Q2 Q1 Q2 Q1 1.1 1.1 2 1.8 -6 -5 5.2 7.5 6.2 2 2.6 2.6 61 130 6.8 9.8 9.2 2.6 3.5 4 2.7 3 V mV/C

rDS(on)

Drain to Source On Resistance

Q2 Q1 Q2

gFS

Forward Transconductance

Dynamic Characteristics
Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Q1: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q2: VDS = 15 V, VGS = 0 V, f = 1 MHZ Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.2 0.2 1340 3240 485 1230 53 103 0.6 0.8 1785 4310 645 1635 80 155 2.0 3.0 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Gate Charge Gate to Drain Miller Charge VGS = 0 V to 10 V Q1 VDD = 15 V, VGS = 0 V to 4.5 V ID = 13 A Q2 VDD = 15 V, ID = 23 A Q1: VDD = 15 V, ID = 13 A, RGEN = 6 Q2: VDD = 15 V, ID = 23 A, RGEN = 6 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8.2 13 2.5 4.8 20 31 2.2 3.4 21 47 10 22 3.9 9 3.1 5.5 16 23 10 10 32 50 10 10 29 66 14 31 ns ns ns ns nC nC nC nC

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Electrical Characteristics TJ = 25 C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13 A VGS = 0 V, IS = 23A Q1 IF = 13 A, di/dt = 100 A/s Q2 IF = 23 A, di/dt = 300 A/s (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 0.8 0.8 25 32 9 39 1.2 1.2 40 51 18 62 V ns nC

Notes: 1: RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 57 C/W when mounted on a 1 in2 pad of 2 oz copper b. 50 C/W when mounted on a 1 in2 pad of 2 oz copper

c. 125 C/W when mounted on a minimum pad of 2 oz copper

d. 120 C/W when mounted on a minimum pad of 2 oz copper

2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. 4: EAS of 40 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 9 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 14 A. 5: EAS of 112 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 15 A, VDD = 27 V, VGS = 10 V. 100% test at L= 0.3 mH, IAS = 22 A.

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted

40
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10 V

4
VGS = 3.5 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

30

VGS = 6 V
VGS = 4.5 V VGS = 4 V

3
VGS = 4 V

20
VGS = 3.5 V

VGS = 4.5 V VGS = 6 V

10
PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

VGS = 10 V

0 0.0

0.2

0.4

0.6

0.8

1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

10 20 ID, DRAIN CURRENT (A)

30

40

Figure 1. On Region Characteristics

Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage

20
SOURCE ON-RESISTANCE (m) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 13 A VGS = 10 V

1.4 1.2 1.0 0.8 0.6 -75

rDS(on), DRAIN TO

16
ID = 13 A

12
TJ = 125 oC

8 4
TJ = 25 oC

-50

-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction Temperature

40

Figure 4. On-Resistance vs Gate to Source Voltage

40
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

VGS = 0 V

10

ID, DRAIN CURRENT (A)

30
VDS = 5 V TJ = 150 oC

1
TJ = 150 oC TJ = 25 oC

20
TJ = 25 oC

0.1

10
TJ = -55 oC

0.01

TJ = -55 oC

0 1.5

2.0

2.5

3.0

3.5

4.0

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

VGS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Source to Drain Diode Forward Voltage vs Source Current

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted

10
VGS, GATE TO SOURCE VOLTAGE (V)

2000
ID = 13 A VDD = 10 V
CAPACITANCE (pF)

1000
VDD = 15 V

Ciss

8 6
VDD = 20 V Coss

4 2

100

Crss
f = 1 MHz VGS = 0 V

10

15

20

25

10 0.1

10

30

Qg, GATE CHARGE (nC)

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure 8. Capacitance vs Drain to Source Voltage

100
RJC = 3.5 C/W
o

20
IAS, AVALANCHE CURRENT (A)

ID, DRAIN CURRENT (A)

10
TJ = 25 oC TJ = 100 oC

80
VGS = 10 V

60
VGS = 4.5 V

40 20
Limited by Package

TJ = 125 oC

1 0.01

0.1

10

100

0 25

50

75

100
o

125

150

tAV, TIME IN AVALANCHE (ms)

TC, CASE TEMPERATURE ( C)

Figure 9. Unclamped Inductive Switching Capability

100
P(PK), PEAK TRANSIENT POWER (W)

Figure 10. Maximum Continuous Drain Current vs Case Temperature

1000
100us
SINGLE PULSE RJA = 125 oC/W TA = 25 oC

ID, DRAIN CURRENT (A)

10
1 ms

100

THIS AREA IS LIMITED BY rDS(on)

10 ms 100 ms

10

0.1

SINGLE PULSE TJ = MAX RATED RJA = 125 oC/W TA = 25 oC

1s
10s

DC 1 10 100 200

0.01 0.01

0.1

0.1 -4 10

10

-3

10

-2

10

-1

10

100

1000

VDS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH (sec)

Figure 11. Forward Bias Safe Operating Area

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

Figure 12. Single Pulse Maximum Power Dissipation

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q1 N-Channel) TJ = 25 C unless otherwise noted

2

1
NORMALIZED THERMAL IMPEDANCE, ZJA

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

t1

0.01

SINGLE PULSE RJA = 125 C/W

(Note 1c)
o

t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA

0.001 -4 10

10

-3

10

-2

10

-1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 13. Junction-to-Ambient Transient Thermal Response Curve

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q2 N-Channel) TJ =

100
VGS = 10 V

25 oC unlenss otherwise noted

8

ID, DRAIN CURRENT (A)

80 60

VGS = 4.5 V VGS = 4 V

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

VGS = 3 V

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

6
VGS = 3.5 V

VGS = 3.5 V

4
VGS = 4 V VGS = 4.5 V

40 20
VGS = 3 V

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

VGS = 10 V

0 0.0

0.2

0.4

0.6

0.8

1.0

20

40

60

80

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

Figure 14. On-Region Characteristics

Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage

12
SOURCE ON-RESISTANCE (m)

1.6
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID = 23 A VGS = 10 V

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

1.4
rDS(on), DRAIN TO

9
ID = 23 A

1.2

6
TJ = 125 oC

1.0

3
TJ = 25 oC

0.8 -75

-50

-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 16. Normalized On-Resistance vs Junction Temperature

Figure 17. On-Resistance vs Gate to Source Voltage

100 80

IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX

100
VGS = 0 V

ID, DRAIN CURRENT (A)

10 1

VDS = 5 V

TJ = 125 oC

60
TJ = 125 oC

TJ = 25 oC

40
TJ = 25 oC

0.1 0.01
TJ = -55 oC

20
TJ = -55 oC

0 1.5

2.0

2.5

3.0

3.5

4.0

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

VGS, GATE TO SOURCE VOLTAGE (V)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 18. Transfer Characteristics

Figure 19. Source to Drain Diode Forward Voltage vs Source Current

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q2 N-Channel) TJ = 25 oC unless otherwise noted

10
VGS, GATE TO SOURCE VOLTAGE (V) ID = 23 A

10000

8
CAPACITANCE (pF)
VDD = 10 V

Ciss

1000

6
VDD = 15 V

Coss

4
VDD = 20 V

100
Crss
f = 1 MHz VGS = 0 V

2 0 0 10 20 30 40 50
Qg, GATE CHARGE (nC)

10 0.1

10

30

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 20. Gate Charge Characteristics

Figure 21. Capacitance vs Drain to Source Voltage

160
RJC = 2 C/W
o

50
IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A)

120
VGS = 10 V

TJ = 25 oC

10
TJ = 100 oC

80
VGS = 4.5 V

TJ = 125 oC

40
Limited by Package

1 0.01

0.1

10

100

1000

0 25

50

75

100
o

125

150

tAV, TIME IN AVALANCHE (ms)

TC, CASE TEMPERATURE ( C)

Figure 22. Unclamped Inductive Switching Capability

P(PK), PEAK TRANSIENT POWER (W)

Figure 23. Maximun Continuous Drain Current vs Case Temperature

1000
SINGLE PULSE RJA = 120 oC/W TA = 25 oC

200 100
ID, DRAIN CURRENT (A)

10
THIS AREA IS LIMITED BY rDS(on)

1 ms 10 ms 100 ms 1s 10s DC

100

10

0.1

SINGLE PULSE TJ = MAX RATED RJA = 120 oC/W TA = 25 oC

0.01 0.01

0.1

10

100200

0.1 -3 10

10

-2

10

-1

10

100

1000

VDS, DRAIN to SOURCE VOLTAGE (V)

t, PULSE WIDTH (sec)

Figure 24. Forward Bias Safe Operating Area

Figure 25. Single Pulse Maximum Power Dissipation

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (Q2 N-Channel)

TJ = 25 oC unless otherwise noted

2 1
NORMALIZED THERMAL IMPEDANCE, ZJA

DUTY CYCLE-DESCENDING ORDER

0.1

D = 0.5 0.2 0.1 0.05 0.02 0.01

PDM

t1

0.01

SINGLE PULSE RJA = 120 C/W (Note 1d)

o

t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA

0.001 -3 10

10

-2

10

-1

10

100

1000

t, RECTANGULAR PULSE DURATION (sec)

Figure 26. Junction-to-Ambient Transient Thermal Response Curve

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Typical Characteristics (continued)

SyncFET Schottky body diode Characteristics
Fairchilds SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 27 shows the reverse recovery characteristic of the FDMS3604S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.

25 20
didt = 300 A/s
CURRENT (A)

IDSS, REVERSE LEAKAGE CURRENT (A)

10

-2

TJ = 125 oC

10

-3

15 10 5 0 -5

TJ = 100 oC

10

-4

10

-5

TJ = 25 oC

50

100
TIME (ns)

150

200

10

-6

10

15

20

25

30

VDS, REVERSE VOLTAGE (V)

Figure 27. FDMS3604S SyncFET body diode reverse recovery characteristic

Figure 28. SyncFET body diode reverse leakage versus drain-source voltage

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

Dimensional Outline and Pad Layout

2010 Fairchild Semiconductor Corporation FDMS3604S Rev.B4

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Preliminary Datasheet

FDMS3604S Dual N-Channel PowerTrench MOSFET

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Power-SPM F-PFS AccuPower * PowerTrench FRFET Auto-SPM SM Global Power Resource PowerXS The Power Franchise Build it Now Green FPS Programmable Active Droop CorePLUS Green FPS e-Series QFET CorePOWER Gmax QS CROSSVOLT TinyBoost GTO Quiet Series CTL TinyBuck IntelliMAX RapidConfigure Current Transfer Logic TinyCalc ISOPLANAR DEUXPEED TinyLogic Dual Cool MegaBuck TINYOPTO EcoSPARK Saving our world, 1mW/W/kW at a time MICROCOUPLER TinyPower EfficentMax SignalWise MicroFET TinyPWM SmartMax ESBC MicroPak TinyWire SMART START MicroPak2 TriFault Detect SPM MillerDrive TRUECURRENT* STEALTH MotionMax Fairchild SerDes SuperFET Motion-SPM Fairchild Semiconductor SuperSOT-3 OptiHiT FACT Quiet Series SuperSOT-6 OPTOLOGIC FACT UHC OPTOPLANAR SuperSOT-8 FAST Ultra FRFET SupreMOS FastvCore UniFET SyncFET FETBench VCX Sync-Lock FlashWriter * PDP SPM VisualMax FPS XS *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporations Anti-Counterfeiting Policy. Fairchilds Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchilds quality standards for handing and storage and provide access to Fairchilds full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I48

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production

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