MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

PM300RL1A060
FEATURE
Inverter + Brake + Drive & Protection IC

a) Adopting new 5th generation Full-Gate CSTBTTM chip

b) The over-temperature protection which detects the chip sur-
face temperature of CSTBTTM is adopted.
c) Error output signal is possible from all each protection up-
per and lower arm of IPM.
d) Compatible L-series package.

• 3φ 300A, 600V Current-sense and temperature sense

IGBT type inverter
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, short-
circuit, over-temperature & under-voltage (P-FO available
from upper arm devices)
• UL Recognized

APPLICATION
General purpose inverter, servo drives and other motor controls

PACKAGE OUTLINES Dimensions in mm

135
122.1 11.7
110±0.5 6.05 (Screwing Depth)
6-M5 Nuts 13
26 26 40.5
(13)

18.7
6.05
18

W V U

10.5
21.5
B

110
20
N

90.1
78±0.5

71.5
66.5
20

6-2 10 3-2 10 3-2 10 3-2

P

3.25
11

19 13 9 5 1

4-φ5.5
Mounting Holes 30.15 11
2-φ2.5 19- 0.5 4

Terminal code
34.7
33.6

1. VUPC 6. VFO 11. WP 16. UN

-0.5
24.1 +1

L A B E L 2. UFO 7. VP 12. VWP1 17. VN

3. UP 8. VVP1 13. VNC 18. WN
4. VUP1 9. VWPC 14. VN1 19. Fo
5. VVPC 10. WFO 15. Br

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

INTERNAL FUNCTIONS BLOCK DIAGRAM

WP VWP1 VP VVP1 UP VUP1

Br Fo VNC WN VN1 VN UN VWPC WFO VVPC VFO VUPC UFO

1.5k
1.5k 1.5k 1.5k

Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc Gnd In Fo Vcc

Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT Gnd Si Out OT

B N W V U P

MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
±IC Collector Current TC = 25°C (Note-1) 300 A
±ICP Collector Current (Peak) TC = 25°C 600 A
PC Collector Dissipation TC = 25°C (Note-1) 833 W
Tj Junction Temperature –20 ~ +150 °C
*: Tc measurement point is just under the chip.

BRAKE PART
Symbol Parameter Condition Ratings Unit
VCES Collector-Emitter Voltage VD = 15V, VCIN = 15V 600 V
IC Collector Current TC = 25°C (Note-1) 150 A
ICP Collector Current (Peak) TC = 25°C 300 A
PC Collector Dissipation TC = 25°C (Note-1) 520 W
IF FWDi Forward Current TC = 25°C 150 A
VR(DC) FWDi Rated DC Reverse Voltage TC = 25°C 600 V
Tj Junction Temperature –20 ~ +150 °C

CONTROL PART
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC, VVP1-VVPC
VD Supply Voltage 20 V
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
VCIN Input Voltage 20 V
UN • VN • WN • Br-VNC
Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC
VFO Fault Output Supply Voltage 20 V
FO-VNC
IFO Fault Output Current Sink current at UFO, VFO, WFO, FO terminals 20 mA

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

TOTAL SYSTEM
Symbol Parameter Condition Ratings Unit
Supply Voltage Protected by VD = 13.5 ~ 16.5V
VCC(PROT) Inverter Part, Tj = +125°C Start 400 V
SC
VCC(surge) Supply Voltage (Surge) Applied between : P-N, Surge value 500 V
Tstg Storage Temperature –40 ~ +125 °C
Viso Isolation Voltage 60Hz, Sinusoidal, Charged part to Base, AC 1 min. 2500 Vrms

THERMAL RESISTANCES
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Rth(j-c)Q Inverter IGBT part (per 1 element) (Note-1) — — 0.15
Rth(j-c)F Junction to case Thermal Inverter FWDi part (per 1 element) (Note-1) — — 0.23
Rth(j-c)Q Resistances Brake IGBT part (Note-1) — — 0.24
°C/W
Rth(j-c)F Brake FWDi upper part (Note-1) — — 0.39
Case to fin, (per 1 module)
Rth(c-f) Contact Thermal Resistance — — 0.023
Thermal grease applied (Note-1)
* If you use this value, Rth(f-a) should be measured just under the chips.

(Note-1) Tc (under the chip) measurement point is below. (unit : mm)

arm UP VP WP UN VN WN BR
axis IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT FWDi IGBT Di
X 25.2 25.2 58.8 58.8 88.8 88.8 37.2 37.2 70.8 70.8 100.8 100.8 11.5 7.5
Y 57.1 46.8 57.1 46.8 57.1 46.8 28.4 38.8 28.4 38.8 28.4 38.8 27.6 61.0

Bottom view

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)

INVERTER PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter Saturation VD = 15V, IC = 300A Tj = 25°C — 1.75 2.35
VCE(sat) V
Voltage VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C — 1.75 2.35
VEC FWDi Forward Voltage –IC = 300A, VD = 15V, VCIN = 15V (Fig. 2) — 1.7 2.8 V
ton 0.3 0.8 2.0
VD = 15V, VCIN = 0V↔15V
trr — 0.4 0.8
VCC = 300V, IC = 300A µs
tc(on) Switching Time — 0.4 1.0
Tj = 125°C
toff — 1.0 2.3
Inductive Load (Fig. 3,4)
tc(off) — 0.3 1.0
Collector-Emitter Cutoff Tj = 25°C — — 1
ICES VCE = VCES, VD = 15V (Fig. 5) mA
Current Tj = 125°C — — 10

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

BRAKE PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
Collector-Emitter Saturation VD = 15V, IC = 150A Tj = 25°C — 1.75 2.35
VCE(sat) V
Voltage VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C — 1.75 2.35
VEC FWDi Forward Voltage –IC = 150A, VCIN = 15V, VD = 15V (Fig. 2) — 1.7 2.8 V
Collector-Emitter Cutoff Tj = 25°C — — 1
ICES VCE = VCES, VD = 15V (Fig. 5) mA
Current Tj = 125°C — — 10

CONTROL PART
Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
VN1-VNC — 8 16
ID Circuit Current VD = 15V, VCIN = 15V mA
V*P1-V*PC — 2 4
Vth(ON) Input ON Threshold Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC 1.2 1.5 1.8
V
Vth(OFF) Input OFF Threshold Voltage UN • VN • WN • Br-VNC 1.7 2.0 2.3
Inverter part 600 — —
SC Short Circuit Trip Level –20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6) A
Brake part 300 — —
Short Circuit Current Delay
toff(SC) VD = 15V (Fig. 3,6) — 0.2 — µs
Time
OT Trip level 135 — —
Over Temperature Protection Detect Temperature of IGBT chip °C
OT(hys) Hysteresis — 20 —
UV Supply Circuit Under-Voltage Trip level 11.5 12.0 12.5
–20 ≤ Tj ≤ 125°C V
UVr Protection Reset level — 12.5 —
IFO(H) — — 0.01
Fault Output Current VD = 15V, VCIN = 15V (Note-2) mA
IFO(L) — 10 15
Minimum Fault Output Pulse
tFO VD = 15V (Note-2) 1.0 1.8 — ms
Width
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.

MECHANICAL RATINGS AND CHARACTERISTICS

Limits
Symbol Parameter Condition Unit
Min. Typ. Max.
— Mounting torque Mounting part screw : M5 2.5 3.0 3.5 N•m
— Mounting torque Main terminal part screw : M5 2.5 3.0 3.5 N•m
— Weight — — 800 — g

RECOMMENDED CONDITIONS FOR USE

Symbol Parameter Condition Recommended value Unit
VCC Supply Voltage Applied across P-N terminals ≤ 400 V
Applied between : VUP1-VUPC, VVP1-VVPC
VD Control Supply Voltage 15.0 ± 1.5 V
VWP1-VWPC, VN1-VNC (Note-3)
VCIN(ON) Input ON Voltage Applied between : UP-VUPC, VP-VVPC, WP-VWPC ≤ 0.8
V
VCIN(OFF) Input OFF Voltage UN • VN • WN • Br-VNC ≥ 9.0
fPWM PWM Input Frequency Using Application Circuit of Fig. 8 ≤ 20 kHz
Arm Shoot-through Blocking
tdead For IPM’s each input signals (Fig. 7) ≥ 2.0 µs
Time

(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak

≤ ± 5V/µs

≤ 2V

15V

GND

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

PRECAUTIONS FOR TESTING

1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be al-
lowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W,B) P, (U,V,W,B)

IN IN

VCIN
Fo
V Ic VCIN
Fo
V –Ic
(0V) (15V)

U,V,W,B, (N) U,V,W,B, (N)

VD (all) VD (all)
Fig. 1 VCE(sat) Test Fig. 2 VEC, (VFM) Test

a) Lower Arm Switching

P
Fo trr
VCIN Signal input VCE
(15V) (Upper Arm) U,V,W Ic
Irr
CS Vcc
90%
Signal input Fo 90%
VCIN (Lower Arm)
N
VD (all) Ic 10% 10%
b) Upper Arm Switching 10% 10%
P tc(on) tc(off)
Fo
VCIN Signal input
(Upper Arm) VCIN
U,V,W
CS Vcc td(on) tr td(off) tf
VCIN Fo
Signal input
(15V) (Lower Arm) (ton = td(on) + tr) (toff = td(off) + tf)
N

VD (all) Ic

Fig. 3 Switching time and SC test circuit Fig. 4 Switching time test waveform

VCIN
Short Circuit Current

P, (U,V,W,B)
A Constant Current

IN SC Trip
Fo Pulse VCE
VCIN
(15V) Ic

U,V,W,B, (N) Fo
VD (all)

toff(SC)
Fig. 5 ICES Test

Fig. 6 SC test waveform

IPM’ input signal VCIN

(Upper Arm)
1.5V 2V 1.5V t
0V
IPM’ input signal VCIN
(Lower Arm)
2V 1.5V 2V t
0V
tdead tdead tdead

1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value

Fig. 7 Dead time measurement point example

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

P
20k ≥10µ VUP1
Vcc OT
→ UFo 1.5k OUT
Fo +
VD IF
UP Si
In
–
VUPC U
GND GND
≥0.1µ
VVP1 OT
Vcc
VFo 1.5k OUT
Fo
VD VP
Si
In
VVPC V
GND GND M
VWP1 OT
Vcc
WFo 1.5k OUT
Fo
VD WP Si
In
VWPC W
GND GND

20k
OT
→ Vcc
≥10µ OUT
IF Fo
UN Si
In
N
GND GND
≥0.1µ
20k OT
→ ≥10µ
Vcc
OUT
IF Fo Si
VN
In
GND GND
≥0.1µ
20k VN1 OT
→ Vcc
≥10µ
Fo OUT
VD IF
WN Si
In
GND GND
≥0.1µ VNC B
4.7k OT
→ Vcc
OUT
IF Fo
Br Si
In

5V 1k GND GND
Fo 1.5k

: Interface which is the same as the U-phase

Fig. 8 Application Example Circuit

NOTES FOR STABLE AND SAFE OPERATION ;

•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
•Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
•Slow switching opto-coupler: CTR > 100%
•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

PERFORMANCE CURVES
(Inverter Part) COLLECTOR-EMITTER SATURATION
OUTPUT CHARACTERISTICS VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL) (TYPICAL)
350 2.0

SATURATION VOLTAGE VCE(sat) (V)

Tj = 25°C 15V VD = 15V
1.8
COLLECTOR CURRENT IC (A)

300
VD = 17V 1.6

COLLECTOR-EMITTER
250 1.4
1.2
200
13V 1.0
150
0.8

100 0.6
0.4
50 Tj = 25°C
0.2
Tj = 125°C
0 0
0 0.5 1.0 1.5 2.0 0 50 100 150 200 250 300 350

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS DIODE FORWARD CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

2.4 103
SATURATION VOLTAGE VCE(sat) (V)

7 VD = 15V
5
2.2
3
COLLECTOR-EMITTER

2
2.0
102
7
1.8 5
3
1.6 2

101
1.4 7
5
IC = 300A 3
1.2 Tj = 25°C Tj = 25°C
2
Tj = 125°C Tj = 125°C
1.0 100
12 13 14 15 16 17 18 0 0.5 1.0 1.5 2.0

CONTROL VOLTAGE VD (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

SWITCHING TIME (ton, toff) CHARACTERISTICS SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL) (TYPICAL)
101 100
VCC = 300V
SWITCHING TIME tc(on), tc(off) (µs)

7 7
VD = 15V
SWITCHING TIME ton, toff (µs)

5 5
4 Tj = 25°C 4 tc(off)
3 Tj = 125°C 3
Inductive load
2 2
tc(on)

100 toff 10–1 tc(off)

7 7
ton
5 5
4 4 VCC = 300V
3 3 VD = 15V
Tj = 25°C
2 2
Tj = 125°C
Inductive load
10–1 0 10–2 0
10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)

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PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

SWITCHING LOSS CHARACTERISTICS DIODE REVERSE RECOVERY CHARACTERISTICS

(TYPICAL) (TYPICAL)

REVERSE RECOVERY CURRENT lrr (A)

20 0.6 120
SWITCHING LOSS Eon, Eoff (mJ/pulse)

VCC = 300V VCC = 300V

REVERSE RECOVERY TIME trr (µs)

VD = 15V VD = 15V
Tj = 25°C 0.5 100
15 Tj = 125°C Eon
Inductive load 0.4 Irr 80

10 0.3 60
Eoff
trr
0.2 40
5
0.1 Tj = 25°C 20
Tj = 125°C
Inductive load
0 0 0
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350

COLLECTOR CURRENT IC (A) COLLECTOR REVERSE CURRENT –IC (A)

SWITCHING RECOVERY LOSS CHARACTERISTICS ID VS. fc CHARACTERISTICS

(TYPICAL) (TYPICAL)
7 120
VCC = 300V VD = 15V
SWITCHING LOSS Err (mJ/pulse)

6 VD = 15V 100
Tj = 25°C
N-side
Tj = 25°C Tj = 125°C
Tj = 125°C
5
Inductive load 80
4
ID (mA)

60
3
40
2
P-side
1 20

0 0
0 50 100 150 200 250 300 350 0 5 10 15 20 25

COLLECTOR REVERSE CURRENT –IC (A) fc (kHz)

UV TRIP LEVEL VS. Tj CHARACTERISTICS SC TRIP LEVEL VS. Tj CHARACTERISTICS

(TYPICAL) (TYPICAL)
20 2.0
UVt VD = 15V
18 1.8
(SC of Tj = 25°C is normalized 1)

UVr
16 1.6
14 1.4
UVt /UVr (V)

12 1.2
SC

10 1.0
8 0.8
6 0.6
4 0.4
2 0.2
0 0
–50 0 50 100 150 –50 0 50 100 150

Tj (°C) Tj (°C)

May 2009

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 MITSUBISHI <INTELLIGENT POWER MODULES>

PM300RL1A060
FLAT-BASE TYPE
INSULATED PACKAGE

(Brake Part)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS OUTPUT CHARACTERISTICS
(TYPICAL) (TYPICAL)
100 180
7 Tj = 25°C 15V
5
THERMAL IMPEDANCE Zth(j-c)

160

COLLECTOR CURRENT IC (A)

NORMALIZED TRANSIENT

3 VD = 17V
2 140
10–1 120 13V
7
5 100
3
2 80
10–2 Single Pulse 60
7
5 IGBT part; 40
3 Per unit base = Rth(j-c)Q = 0.15°C/ W
2 FWDi part; 20
Per unit base = Rth(j-c)F = 0.23°C/ W
10–3 –5 0
10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101 0 0.5 1.0 1.5 2.0

TIME t (sec) COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION COLLECTOR-EMITTER SATURATION

VOLTAGE (VS. Ic) CHARACTERISTICS VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL) (TYPICAL)
2.0 2.4
SATURATION VOLTAGE VCE(sat) (V)
SATURATION VOLTAGE VCE(sat) (V)

VD = 15V
1.8
2.2
1.6
COLLECTOR-EMITTER

COLLECTOR-EMITTER

1.4 2.0

1.2
1.8
1.0
1.6
0.8
0.6 1.4
0.4 IC = 150A
Tj = 25°C 1.2 Tj = 25°C
0.2
Tj = 125°C Tj = 125°C
0 1.0
0 50 100 150 200 12 13 14 15 16 17 18

COLLECTOR CURRENT IC (A) CONTROL VOLTAGE VD (V)

TRANSIENT THERMAL
DIODE FORWARD CHARACTERISTICS IMPEDANCE CHARACTERISTICS
(TYPICAL) (TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)

103 100
7 VD = 15V 7
5 5
THERMAL IMPEDANCE Zth(j-c)
NORMALIZED TRANSIENT

3 3
2 2

102 10–1
7 7
5 5
3 3
2 2

101 10–2 Single Pulse

7 7
5 5 IGBT part;
3 3 Per unit base = Rth(j-c)Q = 0.24°C/ W
2 Tj = 25°C 2 FWDi part;
Tj = 125°C Per unit base = Rth(j-c)F = 0.39°C/ W
100 10–3 –5
0 0.5 1.0 1.5 2.0 10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101

EMITTER-COLLECTOR VOLTAGE VEC (V) TIME t (sec)

May 2009