Research Article Vol. 40, No.

8 / August 2023 / Journal of the Optical Society of America A 1545

Multifrequency on–off modulation and slow light

characterization of the patterned black
phosphorus metamaterial based on dual
plasmon-induced transparency
Xia Chang, Hongjian Li,* Chao Liu, Zhenbing Zhang, Min Li, Bianxian Ruan,
AND Enduo Gao
School of Physics and Electronics, Central South University, Changsha 410083, China
*lihj398@126.com

Received 21 February 2023; revised 20 June 2023; accepted 4 July 2023; posted 6 July 2023; published 19 July 2023

We present a monolayer patterned black phosphorus (BP) metamaterial for generating a tunable dual plasmon-
induced transparency (PIT). We have derived the expression for the theoretical transmittance by introducing the
coupled mode theory (CMT), and the calculated results of the expression highly overlap with the simulation results.
The quarterly frequency synchronous switch with two different operating bands is designed by the carrier density
and scattering rate on the dual PIT modulation effect. Two parameters were selected as important markers to show
the performance of the optical switch: the modulation depth (MD) and the insertion loss (IL). The theoretical
analysis of this structure shows that the higher modulation depth (5.45 dB < MD < 12.06 dB) and lower inser-
tion loss (0.60 dB < IL < 0.22 dB) of these switches are of good application. In addition, we found the slow light
properties of the structure were excellent with a group index of up to 219. This work provides a theoretical basis to
prepare multifrequency optical switch and optical buffer devices. © 2023 Optica Publishing Group
https://doi.org/10.1364/JOSAA.488335

1. INTRODUCTION flexible operating bands, and the PIT is attracting more and
Surface plasmons (SPs) are surface collective electromag- more attention [15–17].
In the past, most PIT studies have chosen metal as the experi-
netic oscillatory waves generated by the resonance interaction
mental material [18] due to the easy availability of materials for
between conduction electrons on the metal surface and photons
metallic waveguides and their easy fabrication. However, there
in incident light [1,2], which can break through the tradi-
are some unavoidable drawbacks, such as the difficulty of chang-
tional diffraction limit and provide a new direction to realize
ing the operating band, the spectral response, and the high losses
the manipulation of electromagnetic waves at subwavelength
[19,20], which limited the dielectric constant function. With
scales [3]. As a result, various optical phenomena based on the rise of 2D materials, it has been discovered that 2D materials
plasmon systems have been studied, such as optical transport can excite the SPs and support the propagation of SPs [21,22].
[4], Fano resonance [5], and plasmon-induced transparency Black phosphorus (BP), an emerging 2D material, possesses
[6] (PIT). PIT is an analogue of electromagnetic-induced unique advantages that make it stand out from other 2D mate-
transparency (EIT), which is caused by the strong coupling of rials. Graphene [23] is the most widely applied and explored
SPs between metal and dielectric layers [7,8]. PIT can alter the 2D material [24,25] that has many excellent optoelectronic
optical response of the system by creating anomalous absorption properties, such as a high electron mobility, broadband optical
peaks or transmission valleys when light passes through the absorption, and long propagation length [23,26]. However,
great narrow spectral regions. This narrow transmission valley graphene lacks a direct bandgap, leading to restrictions in semi-
is closely related to the strong dispersion effect, which can pro- conductor electronics. BP has a direct bandgap that can be
duce a large group refractive index. It has greater prospects for tuned by the number of layers and electric voltage bias [27,28].
development in slow light devices [9]. These optical features can For example, the direct bandgap of single-layer BP and bulk
be used to manufacture various devices such as optical switches BP is, respectively, 2.0 eV and 0.3 eV. The BP direct bandgap
[10,11], optical sensors [12], optical absorption units [13], and tunability allows BP to operate in a wide frequency range from
optical storage units [14]. Compared to EIT, PIT has simple the visible to the mid-IR spectra range [29,30], expanding
experimental materials, low environmental requirements, and the operating range of BP-based metamaterials [31]. BP also

1084-7529/23/081545-07 Journal © 2023 Optica Publishing Group

 1546 Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A Research Article

exhibits excellent electrical properties, which include a high hole (a) (b)
Incident wave P
mobility up to 1350 cm2 V−1 s−1 , a switching ratio up to 105 ,
E(x)
great current saturation in field-effect devices and a high relative l
carrier density n = 2.6 × 1014 cm−2 at low temperatures. w1
In this paper, we introduce a dual-PIT device made of BP H(y) P l l1
material with a periodical structure. Under the excitation of k(z)

x-polarized light, a square BP nanosheet can be used as a bright

Dielectric
mode and two rectangular BP nanosheets can be used as a dark Black phosphorus
Dielectric
mode. The bright mode and the dark mode interfere with each
other to produces the dual-PIT curve in transmission spectrum. (c)
The coupled mode theory (CMT) calculations were compared
ZZ(y)
to the finite-different time-domain (FDTD) simulations at
the same transmission spectrum, and they remained highly AC(x)
consistent. To investigate the changes brought by different con-
ditions to the PIT phenomenon, we varied the carrier density Fig. 1. (a) 3D structure sketch of BP metamaterial. (b) Vertical view
of unit cell in Fig. 1(a). The detailed parameters are P = 2000 nm, l =
and scattering rate of the BP material to observe the changes in
1200 nm, w1 = 300 nm, and l 1 = 200 nm. (c) 3D spatial distribution
the transmission valley and concluded that the curve of the PIT of BP.
shifts to blue as the carrier density increases. Based on the tun-
able properties of the PIT phenomenon of BP metamaterials,
the optical switching devices can be designed. The simulation n eff = β/k0 , (2)
results show that the optimization of the optical switching
performance can be achieved by reducing the BP scattering rate. where εr is the relative permittivity of dielectric, η0 and k0 cor-
In addition, the group index was used as an important indicator respond to the intrinsic impedance and the wave vector, and
of the slow-light performance of the structure, and it was found σg is the complex conductivity. Figure 1(c) shows that BP is
that the group index of the structure was as high as approxi- an orthorhombic crystal consisting of puckered layers, where
mately 219, which was superior to other structures [9,32–35]. armchair (AC) and zigzag (ZZ) directions correspond to the x
Due to the simple design of the studied structure, it is simpler in axis and the y axis. Every P atom is combined with its neigh-
the production and fabrication process. The present work opens bors via s p 3 hybridization of 3s and 3 p atomic orbitals [36],
a new path for the design of optical switches and slow-light which result in the puckered structure of monolayer BP. The
devices. folded nature of the monolayer BP gives each anisotropy in both
the effective mass and optical properties of the BP. Due to the
anisotropy of monolayer BP, the conductivity of monolayer BP
2. STRUCTURAL DESIGN AND THEORETICAL can be obtained as a Drude-like expression [29]
ANALYSIS
i Dj
The structure of the dual-PIT BP, which consists of a series σjj = , (3)
π (ω + iη/~)
of patterned planer monolayer BP nanoflakes and a sub-
strate, is schematically shown in Fig. 1(a). The patterned BP π e 2n
nanoflakes are periodic in the x–y plane and sandwiched in Dj = , (4)
mj
the substrate. The thickness of the substrate and superstrate
are, respectively 100 nm and 50 nm. A nondispersive medium where j = 1, 2 is defined as the AC and ZZ directions, ω is the
with a refractive index of 1.4 was used for the substrate. As angular frequency of the incident light, η = 1/τ to describe
displayed in Fig. 1(b), the BP nanoflake contains a square BP the scattering rate (η is the carrier relation time, related to finite
nanosheet and two rectangular BP nanosheets. A square BP damping), and D j is the Drude weight along different direc-
nanosheet (length × width × thickness) with l × l × d is tions, in which e , m j , and n are, respectively, the electron charge,
noted as Structure 1, which occupies the center of the unit the effective mass along both directions in the plane, and the
cell. Two rectangular BP nanosheets with l 1 × w1 × d denote carrier density. Then,
Structure 2. The ambient temperature is set to room tem-
perature T = 300 K. Figure 1(b) shows the vertical view of ~2 ~2
mx = 2γ1 2
, my = . (5)
the cell structure. The mesh accuracy of the overlay is fixed at + ηc 2νc
1
1x = 1y = 1z = 0.05 µm.
We consider x-polarized light perpendicular to the structure Since the charge carriers here represent electrons, for mono-
as the excitation source. From far-IR to THz range, the BP layer BP[37], γ1 = 4a /π eVm, 1 = 2 eV, ηc = ~2 /(0.4m 0 ),
exhibits metal-like properties. When the incident wave acts υc = ~2 /(1.4m 0 ), a = 0.223 nm, and d = 0.85 nm.
on the BP, SPs can be excited and propagate along the interface The numerical simulation method uses the FDTD method
between the BP and the dielectric. The propagation constant in this paper. In the calculation, the periodic boundary condi-
βand effective refractive index n eff can be described by [21] tions (PBC) are applied to the x (y ) directions, and a perfectly
s matched layer (PML) is used in the z direction. Figure 2(a)
2εr 2 shows the transmission spectrum of the individual Structure 1
 
β = k0 εr − , (1) and Structure 2. Here, the parameters are set as η = 3 meV, and
σg η0
 Research Article Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A 1547

distribution diagrams of dip2. It can be seen when the light wave

with f dip2 = 12.48 THz is vertically incident on the structure,
the light energy is distributed at the four corners of the bright
mode, which is like the electric field diagram in Fig. 2(c); how-
ever, compared to Fig. 2(c), the localized ability of the electric
field at the four corners is enhanced. When the system is a whole,
both the bright mode and the dark mode can be excited, and
there is a near-field coupling between the bright mode and the
dark mode, which leads to the enhancement of the corner energy
of the rectangular BP. Figure 2(g) is the electric field distribution
diagram of dip3. It can be seen that when the light wave with
frequency f dip3 = 17.52 THz is vertically incident, the energy
of the light is distributed at four intersection points between S1
Fig. 2. (a) Transmission spectrum when linearly polarized light is and S2. a comparison of the electric field distribution diagram
incident vertically along the positive direction of the z axis. The blue shows that there is coupling between the dark mode and the
(green) curve represents the transmission spectrum when distributed second resonance mode, and the blue shift of the second reso-
periodically by Structure 1 (Structure 2). Transmission spectrum, nance mode is caused by the weak coupling strength between
of the system where n = 1.2 × 1014 cm−2 and η = 3 meV. (b)–(c) the dark mode and the second resonance mode. Therefore,
Electric field strength distribution of f 1 and f 2 . (d)–(f ) Electric field the double PIT phenomenon of the structure is caused by the
strength distribution of dip1, dip2, and dip3, respectively. The three coupling of the bright mode and the dark mode.
transmission valleys of the double PIT in the transmission spectrum
The CMT is a mature theoretical research method that can
( f dip1 = 8.96 THz, f dip2 = 12.48 THz, and f dip3 = 17.52 THz) are
represented by dip1, dip2, and dip3.
study the coupling relationship between two or more resonance
modes and has been used in many papers [38–40]. The CMT
is introduced to understand the transmission properties of the
n = 1.2 × 1014 cm−2 . When the x-polarized light is incident proposed structure. As shown in Fig. 3, the three equivalent
vertically along the z axis, Structure 1 can be effectively coupled theoretical coupled modes are named A 1 , A 2 , and A 3 . The
with the incident light and is called the bright mode (blue line). in/out
wave passing through the resonant cavity is expressed as A n±
From the transmission spectrum, it can be seen that Structure (n = 1, 2, 3). The subscripts ± show the propagating direction
1 produces two BP surface plasmons (BPSP) resonance modes of the traveling wave, and superscripts in/out represent “wave
with the first resonance mode at f 1 = 12.17 THz and the enter” or “wave leave” the resonant cavity. Thus, the complex
second resonance mode at f 2 = 15.14 THz. Instead, Structure amplitude a n of the nth resonator can be expressed as
2 cannot be excited directly by the event, and acts as dark
γ1 −iµ12 −iµ13
  
mode (green line). When Structure 1 and Structure 2 become a1
a whole, the dark mode interacts with the bright mode to pro-  −iµ21 γ2 −iµ23   a 2 
duce three significant transmissive valleys. To conveniently −iµ31 −iµ32 γ2 a3
describe the change of PIT, the transmission dips of Fig. 2(b)  1/2   in 
are marked as dip1, dip2, and dip3 respectively, from left to −γo 1 0 0 A 1+ + A in
1−
right. The frequency of transmission dips is f dip1 = 8.96 THz, =  0 −γo1/21 0   A in in 
2+ + A 2− , (6)
f dip2 = 12.48 THz, and f dip3 = 17.52 THz. 0
1/2
0 −γo 1 A 3+ + A in
in
3−
To further explain the process of dual-PIT, we present the
simulated electric field intensity profiles in Figs. 2(b)–2(f ). where µmn (m 6 = n) is the coupling coefficient between
Figures 2(b) and 2(c) describe the electric field distribution of nth and mth, γn = (iω − iωn − γin − γon ), ωn is the
the two resonant frequencies when only S1 exists in the system. resonance angular frequency of nth resonator mode,
Figure 2(b) shows the electric field distribution at the first res- γin = 1/τin = ωn /(2Q in ) is the attenuation rate caused by
onance mode f 1 = 12.17 THz. It can be seen from the figure internal loss, and γon = 1/τon = ωn /(2Q on ) is the attenuation
that the energy is placed at the corner of the rectangular BP. rate of energy escaping from the mode to outer space. Q tn , the
Figure 2(c) shows the electric field distribution in the second total loss quality factor, satisfied 1/Q tn = 1/Q in + 1/Q on ,
resonance mode f 2 = 15.14 THz, from which it can be seen where Q in and Q on are nth mode quality factors associated
that the energy is localized on both sides of the BP nanosheet and with, respectively, the intrinsic loss and the loss of diffusion into
is excited by the plane light of the electric field energy along the x outer space. Q tn and Q on can be expressed as Q tn = f /1 f and
axis. Figures 2(e)–2(g) shows the electric field distribution at the Q on = Re(n eff )/Im(n eff ).
three transmission valleys in the double PIT curve. Figure 2(e) According to the conservation of energy, we get
is the electric field distribution diagram of dip1. When the
light wave with f dip1 = 8.96 THz was vertically incident on the A in out iφ12
2+ = A 1+ e , A in out iφ21
1− = A 2− e , (7)
structure, the energy localized on both sides of the dark mode.
As shown in the figure, due to the coupling between the bright A in out iφ23
, A in out iφ32
, (8)
3+ = A 2+ e 2− = A 3− e
mode and the dark mode, the dark mode is indirectly excited
by the light source through the bright mode, forming a new
1/2 1/2
1+ = A 1+ − γo 1 a 1 , A 1− = A 1− − γo 1 a 1 ,
A out in out in
transmission valley. Figures 2(e) and 2(f ) are the electric field (9)
 1548 Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A Research Article

Fig. 3. The theoretical CMT model for the dual-PIT structure.

1/2 1/2
2+ = A 2+ − γo 2 a 2 , A 2− = A 2− − γo 2 a 2 ,
A out in out in
(10)
Fig. 4. (a)–(e) Transmission spectra of the proposed structures
A out = A in
1/2
− γo 3 a 3 , A out = A in
1/2
− γo 3 a 3 , (11) with different carrier (n) concentrations from n = 0.6 × 1014 cm−2
3+ 3+ 3− 3−
to n = 1.4 × 1014 cm−2 with an interval of 1n = 0.2 × 1014 cm−2 .
where φmn is the phase difference between the nth mode and The red curves are the results of CMT theoretical calculations, and the
the mth mode. Because the proposed BP nanoflake is in the black circles are the results of FDTD simulations. (f ) Function rela-
same plane, φmn = 0. During the theoretical calculation, tionship n and frequency of transmittance dips. (g) 3D plot between
frequency, carrier concentration, and transmittance calculated by
it is assumed that the light is incident from a single direc-
CMT.
tion, A out in
1+ = A 1− = 0. Thus, we can obtain the transmission
coefficient
A out 3. RESULTS AND DISCUSSION
3+ 1/2 1/2 1/2
t= = 1 − γo 1 B − γo 2 C − γo 3 D, (12)
A in The frequency, spectral width, and transmissivity of transmis-
1+
sion dips can be adjusted by the carrier density (n) and scattering
and h rate (η). We can take advantage of this feature of the dual-PIT to
1/2 1/2
B = (γ2 γ3 − γ23 γ32 )γo 1 + (γ12 γ3 + γ13 γ32 )γo 2 realize the fabrication of photoelectric devices. First, we discuss
i. the impact of the carrier density related with voltage bias on the
1/2 light transmission. [29,41,42].
+ (γ12 γ23 + γ13 γ2 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3
The transmission spectrum of BP metamaterial with differ-
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , ent carrier densities [(a) n = 0.6 × 1014 cm−2 (b) n = 0.8 ×
(13) 1014 cm−2 (c) n = 1.0 × 1014 cm−2 (d) n = 1.2 × 1014 cm−2
h (e) n = 1.4 × 1014 cm−2 ] are displayed in Fig. 4. The results of
1/2 1/2
C = (γ3 γ21 + γ23 γ31 )γo 1 + (γ1 γ3 − γ13 γ31 )γo 2 the theoretical calculation of CMT (red line) are approximately
the same as the results of the numerical calculation of the FDTD
1/2
i. method (black circle). As the carrier density n increased, the
+ (γ1 γ23 + γ13 γ21 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3 dual-PIT curve had a blue shift trend and the dip’s transmissiv-
ity decreased. Figure 4(f ) shows the relationship between carrier
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , density n and the frequency of the three transmittance dips. By
(14) observing the slopes of different dips in Fig. 4(f ), it was found
h
1/2 1/2
that dip3 is most sensitive to changes in the carrier density n.
D = (γ21 γ32 + γ2 γ31 )γo 1 + (γ1 γ32 + γ12 γ31 )γo 2 The evolution of the transmission spectra with different carrier
i. n density of BP is presented in Fig. 4(g). The results in Fig. 4(g)
1/2
+ (γ1 γ2 − γ12 γ21 )γo 3 [γ1 γ23 γ32 − γ1 γ2 γ3 are consistent with those in Fig. 4(f ).
According to the results discussed earlier, the PIT curve of
+ γ12 γ21 γ3 + γ12 γ23 γ31 + γ13 γ21 γ32 + γ13 γ2 γ31 ] , the structure produces a prominent blue shift with an increase
(15) in the carrier density, which generates two optical switches with
different operating frequencies. When the carrier density n of
γ12 = iµ12 + (γo 1 γo 2 )1/2 , γ21 = iµ21 + (γo 1 γo 2 )1/2 , (16) BP is limited to two fixed values of n = 0.6 × 1014 cm−2 and
n = 0.8 × 1014 cm−2 , a dynamically adjustable multiswitch
can be achieved with operating frequencies [ f 1 , f 2 , f 3 , f 4 ] =
γ23 = iµ23 + (γo 2 γo 3 )1/2 , γ32 = iµ32 + (γo 2 γo 3 )1/2 , (17) [6.35, 7.32, 8.86, 10.22] THz, as illustrated in Fig. 5(a). In
the design, we assumed that the transmission peaks corre-
γ13 = iµ13 + (γo 1 γo 3 )1/2 , γ31 = iµ31 + (γo 1 γo 3 )1/2 . (18) spond to the “on” state and the transmission valleys response
to the “off” state. When n = 0.6 × 1014 cm−2 , the proposed
We then can achieve theoretical transmittance values optical-switch realizes the “off” state at f 2 = 7.32 THz and
T = |t|2 . f 4 = 10.22 THz and f 1 = 6.35 THz and f 3 = 8.86 THz;
 Research Article Vol. 40, No. 8 / August 2023 / Journal of the Optical Society of America A 1549

3 4
Table 1. Comparison of Different Types of Modulators
1 2

Transmission
Year Structure Type MD IL

3
2020 [43] Monolayer graphene Four frequency 77.7% /
1
4 2022 [45] Metallic resonant Single frequency 11 dB /
2
ring
(a) 2016 [46] Hybrid Single frequency 90% Less than
4
graphene/metal 0.5 dB
1
2
3
stacked
Transmission

2020 [44] Multilayer graphene Four frequency 87.8% /

This work Patterned BP Four frequency 12 dB 0.23 dB
3 4

1
2
(b)

Frequency(THz)

Fig. 5. (a) Quarterly frequency synchronous switch when

n = 0.6 × 1014 cm−2 and n = 0.8 × 1014 cm−2 . (b) Quarterly
frequency synchronous switch when n = 0.8 × 1014 cm−2 and
n = 1.2 × 1014 cm−2 .

when n = 0.8 × 1014 cm−2 , “on” and “off” state is com-

pletely in opposition. In addition, two parameters, the
modulation depth (MD) and the insertion loss (IL), will
be used to evaluate the performance of optical open light.
The modulation depth is set as MD = 10 lg (Tmax /Tmin ), Fig. 6. (a)–(c) Transmission spectrum of quarterly frequency
and the insertion loss is set as IL = −10 lg (Tmax ) [43,44]. synchronous switch changes from η = 3 meV to η = 1 meV, when
Here, Tmin is the maximum transmittance in the full modu- n = 0.6 × 1014 cm−2 and n = 0.8 × 1014 cm−2 . (d)–(f ) Transmission
lation cycle, and Tmax is the transmittance corresponding spectrum of quarterly frequency synchronous switch changes
to another PIT curve at the same frequency. As shown in from η = 3 meV to η = 1 meV, when n = 0.8 × 1014 cm−2 and
n = 1.2 × 1014 cm−2 .
Fig. 5(a), the BP material can be manufactured as a quadruple
frequency synchronous switch. By calculation, the MD and
IL corresponding to the four different frequency states are the optical switches is insensitive to the change in the material’s
[MD1 , MD2 , MD3 , MD4 ] = [2.86, 3.93, 2.02, 2.98] and scattering rate. When the scattering rate of BP decreases, there
[IL1 , IL2 , IL3 , IL4 ] = [0.93, 0.81, 0.62, 0.35]. According to is no significant shift in the frequency corresponding to the
the analysis above, the performance of the optical switch at each transmission valley; however, the difference in the transmit-
frequency is not satisfactory. tance corresponding to the transmission peak and trough is
When the carrier density n of BP is limited to two fixed increasing, which can significantly improve the optical switch
values of n = 0.8 × 1014 cm−2 and n = 1.2 × 1014 cm−2 , performance.
four-frequency synchronous switches can be constructed with When the scattering rate of BP is reduced from 3 meV
operating frequencies [ f 1 , f 2 , f 3 , f 4 ] = [7.32, 8.96, 10.24, to 1 meV, the MD and IL of the first optical switch are
12.49] THz, as shown in Fig. 5(b). When n = 0.8 × [MD1 , MD2 , MD3 , MD4 ] = [7.50, 9.31, 5.6424, 7.0639],
1014 cm−2 , the “on” state and “off” state correspond to [ f 2 , f 4 ]
[IL1 , IL2 , IL3 , IL4 ] = [0.60, 0.38, 0.24, 0.18]; the MD and IL
= [8.96, 12.49] THz and [ f 1 , f 3 ] = [7.32, 10.22] THz.
of the second optical switch are [MD1 , MD2 , MD3 , MD4 ] =
When the carrier density is adjusted from n = 0.8 × 1014 cm−2
[9.26, 12.06, 6.76, 9.2882], [IL1 , IL2 , IL3 , IL4 ] = [0.42,
to n = 1.4 × 1014 cm−2 , the switching state is exactly the
0.24, 0.52, 0.22]. Compared to several groups of different types
opposite. The MD and IL of these four-frequency synchronous
of optical switches, the optical switches obtained in this work
switches are [MD1 , MD2 , MD3 , MD4 ] = [4.11, 5.78,
maintain a relatively good level in terms of both modulation and
2.34, 4.44] and [IL1 , IL2 , IL3 , IL4 ] = [0.63, 0.62,
insertion loss.
1.01, 0.23]. Compared to the optical switches mentioned
earlier, these optical switches have improved performance. In addition, slow light is also one of the important PIT prop-
However, the performance of these two optical switches is still erties. When a narrow resonance peak appears in the spectrum,
poor. Therefore, we will study the effect of the BP scattering rate the phase near the resonance peak will produce a sudden change,
on the optical switch device below (see Table 1). enhancing the interaction between light and matter, which
Second, we studied the effect of the scattering rate of BP on slows down the group velocity. n g as a parameter to demon-
the optical switching performance. Figure 6 show shows the strate the slowing effect of light, and the expression of the group
transmission spectrum of the optical switches at different scat- velocity is
tering rates (η): (a) and (d) η = 1 meV, (b) and (e) η = 2 meV, c dθ
(c) and (f ) η = 3 meV. Obviously, the modulation frequency of ng = , (19)
ls d ω
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From Eq. (11), it is clear that the magnitude of n g is positively transparency in patterned black phosphorus metamaterial,” J. Opt.
correlated with the derivative of θ . When θ changes more Soc. Am. A 38, 412–418 (2021).
rapidly, the value of n g is larger. We set the scattering rate 10. E. D. Gao, H. J. Li, Z. M. Liu, C. X. Xiong, C. Liu, B. X. Ruan, M. Li,
of BP to η = 1 meV. As displayed in Figs. 7(a)–7(d), when and B. H. Zhang, “Terahertz multifunction switch and optical storage
based on triple plasmon-induced transparency on a single-layer
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PIT was designed to realize a multifunctional switching and “Dynamically tunable plasmonically induced transparency in
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can be well matched together. The carrier concentration in BP 13. S. S. Zhuo, Z. M. Liu, F. Q. Zhou, Y. P. Qin, X. Luo, C. Ji, G. X. Yang,
R. H. Yang, and Y. D. Xie, “THz broadband and dual-channel per-
modulates the double PIT and, using this optical property, two fect absorbers based on patterned graphene and vanadium dioxide
four-frequency optical switches were proposed. By changing metamaterials,” Opt. Express 30, 47647–47658 (2022).
the scattering rate of the material, the performance of the opti- 14. X. Zhang, F. Q. Zhou, Z. M. Liu, Z. B. Zhang, Y. P. Qin, S. S. Zhuo, X.
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function,” Opt. Express 29, 29387–29401 (2021).
a lower insertion loss (0.60 dB < IL < 0.22 dB). Both optical 15. C. X. Xiong, H. Xu, M. Z. Zhao, B. H. Zhang, C. Liu, B. Zeng, K. Wu,
switches have good modulation performance. In addition, the B. X. Ruan, M. Li, and H. J. Li, “Triple plasmon-induced transparency
slow optical performance of the proposed structure is expressed and outstanding slow-light in quasi-continuous monolayer graphene
using the group index, and the maximum group index is 219 structure,” Sci. China Phys. Mech. Astron. 64, 224211 (2021).
when n = 1.4 × 1014 cm−2 , η = 1 meV. This indicates that the 16. C. Liu, H. J. Li, H. Xu, M. Z. Zhao, C. X. Xiong, B. H. Zhang, and K.
Wu, “Tunable plasmon-induced transparency absorbers based on
structure has potential for applications in multichannel switches few-layer black phosphorus ribbon metamaterials,” J. Opt. Soc. Am.
and optical buffer devices. B 36, 3060–3065 (2019).
17. B. H. Zhang, H. J. Li, H. Xu, M. Z. Zhao, C. X. Xiong, C. Liu, and K.
Funding. Hunan Provincial Innovation Foundation for Postgraduate Wu, “Absorption and slow-light analysis based on tunable plasmon-
(No. 2022ZZTS0170). induced transparency in patterned graphene metamaterial,” Opt.
Express 27, 3598–3608 (2019).
Disclosures. The authors declare no conflicts of interest. 18. B. Tang, Y. Q. Zhu, X. Zhou, L. Huang, and X. Z. Lang, “Wide-angle
polarization-independent broadband absorbers based on concentric
Data availability. Data underlying the results presented in this paper are
multisplit ring arrays,” IEEE Photon. J. 9, 4502707 (2017).
not publicly available at this time but may be obtained from the authors upon
19. G. T. Cao, H. J. Li, S. P. Zhan, Z. H. He, Z. B. Guo, X. K. Xu, and H.
reasonable request.
Yang, “Uniform theoretical description of plasmon-induced trans-
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