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    Ec 2

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    Ec 2

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    EC2501 Semiconductor Devices and Circuits L-T-P: 3-0-0; Cr: 03

    PREREQUISITE
    i) Elements of Electronics Engineering ii) Basics of circuits
    COURSE OBJECTIVE
    This course is intended to provide a good understanding of basic properties of semiconductor devices
    and circuits, physical principles and operational characteristics of different semiconductor devices and
    circuits. The primary focus will be on silicon based devices.
    COURSE CONTENT
    Unit 1: Semiconductor Physics, Carrier Modelling and Carrier Action (6 Lectures)
    Energy Bands and Charge Carriers in Semiconductors: E-k diagram, Charge carrier concentration;
    Intrinsic carrier concentration; Law of mass action; Carrier transportation: Drift, diffusion and
    tunnelling, recombination, surface effects; Continuity equation in steady state condition; Fermi level;
    quasi-Fermi energy level; Hall effect; Optical and thermal properties.
    Unit2: Classical diodes (4 Lectures)
    Shockley equation; Junction capacitance; Diffusion capacitance; Varactor diode; Tunnel diode;
    IMPATT diode; Gunn diode; Difference between rectifying contact and ohmic contact; Schottky
    Diode.
    Unit3: Physics of Operation of BJT (6 Lectures)
    Transistor as switch: Delay time, Rise time, Storage time, Fall time, Transit frequency (wr); Ebers
    moll model; Gummel Poon model; Amplifier; RC coupled amplifier.
    Unit4: Physics of FET (11 Lectures)
    JFET: Ohmic or triode region of operation, Saturation region of operation, Transfer characteristics,
    Output characteristics (Depletion Type Device or Normally-On device), Shockley Equation, Different
    parameters; MOS structure: Band diagram of an ideal MOS structure, Flat-band voltage, Region of
    operation, C-V characteristics; MOSFET: Region of operation, Transfer characteristics and Output
    characteristics for both n and p channel MOSFET (Enhancement and Depletion), Threshold voltage,
    body effect and channel length modulation, Common source, Common gate and Common drain
    configurations.
    Unit5: Feedback and Power Amplifiers (7 Lectures)
    Feedback in amplifiers: Basic feedback topologies and analysis of various BJT amplifiers; CE
    amplifier, Emitter follower, Power amplifiers with applications: Class A, Class B / push-pull, Class
    AB / complementary symmetry and Class C.
    Unit6: Power Devices (4 Lectures)
    SCR; Diac; Triac; Power BJT- Power MOSFET.
    Unit 7 : Display Devices (4 Lectures)
    Direct and Indirect semiconductor: LED, Solar cell, Photodiode, LCD, Opto Coupler, CCD and its
    applications.
    TEXTBOOKS:
    1. B. G. Streetman and S. K. Banerjee, Solid Statu Electronic Devices, 7th Edition, Pearson.
    2. Sedra and Smith, Microelectronics Circuits: Analysis and design, 6th Edition, Oxford
    University Press.
    REFERENCE BOOKS:
    1. Dr. A. Neamen, Semiconductor Physics and Devices, 3rd Edition, McGraw Hill, 2003
    2. S. M. Size, Physics of Semiconductor Devices, 2nd Edition, John Wiley & Sons, 1981
    3. R.S. Muller and T.I. Kamins, Device Electronics for Integrated Circuits, Wiley, 1986
    4. S. M. Size, Semiconductor Devices: Physics and Technology, 2nd Edition, Wiley 2008.
    COURSE OUTCOMES:
    Upon successful completion of this course, students should be able to:
    COl: Understand the vital concepts and essential characteristics pertaining to intrinsic and
    extrinsic semiconductors.
    C02: Understand the operation of semiconductor devices such as diode, BJT, JFET, MOSFET,
    and display devices.
    C03: Use models of semiconductor devices to predict terminal characteristics under diverse
    operating conditions.
    C04: Learn conceptual understanding of how feedback and power amplifiers work.

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