High Voltage LDO Regulators: Power Management IC Series For Automotive Body Control
High Voltage LDO Regulators: Power Management IC Series For Automotive Body Control
High Voltage LDO Regulators: Power Management IC Series For Automotive Body Control
High Voltage
LDO Regulators
BD3570FP, BD3570HFP, BD3571FP, BD3571HFP, BD3572FP, BD3572HFP
BD3573FP, BD3573HFP, BD3574FP, BD3574HFP, BD3575FP, BD3575HFP No.11036EBT02
●Description
BD357XFP/HFP SERIES regulators feature a high 50 V withstand-voltage and are suitable for use with onboard vehicle
microcontrollers. They offer the output current of 500 mA while limiting the quiescent current to 30μA (TYP).With these
devices, a ceramic capacitor can be selected at the output for stable operation, the output tolerance is within ±2% over the
wide ambient temperature range (-40 to 125℃), and the short circuit protection is folded-type to minimize generation of
heat during malfunction. These devices are developed to offer most robust power-supply design under the harsh
automotive environment. The BD357XFP/HFP Series provide ideal solutions to lower the current consumption as well as to
simplify the use with battery direct-coupled systems.
●Features
1) Ultra-low quiescent current: 30μA (TYP.)
2) Low-saturation voltage type P-channel DMOS output transistors
3) High output voltage precision: 2%/Iomax = 500 mA
4) Low-ESR ceramic capacitors can be used as output capacitors.
5) Vcc power supply voltage = 50 V
6) Built-in overcurrent protection circuit and thermal shutdown circuit
7) TO252-3, TO252-5, HRP5 Package
●Applications
Onboard vehicle devices (body-control, car stereos, satellite navigation systems, etc.)
●Line up matrix
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1/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
●Operating Conditions
Parameter Symbol Min. Max. Unit
BD3570,3572,3573,3575FP/HFP VCC 4.5 ※6 36.0 V
Input voltage
BD3571,3574FP/HFP VCC 5.5 ※6 36.0 V
Output current IO - 500 mA
Variable Output Voltage Range VO 2.8 12 V
※6 Please consider that the Output voltage would be dropped (Dropout voltage) according to the output current.
●Electrical Characteristics(Unless otherwise specified, Ta=-40 to125℃, VCC=13.2 V, SW=3V ※7, VO settings is 5V ※8)
Limit
Parameter Symbol Unit Conditions
Min. Typ. Max.
VCCD※10≦VCC≦25V
Line Regulation Reg.I - 10 30 mV
IO = 0 mA
※7 BD3573,3574,3575FP/HFP only
※8 BD3572,3575FP/HFP only
※9 BD3571,3572,3574,3575FP/HFP only
※10 BD3570,3573FP/HFP :VCCD=5.5V
BD3571,3572,3574,3575FP/HFP :VCCD=6.5V
○This product is not designed for protection against radio active rays.
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2/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
5 5
40
0 0 0
0 5 10 15 20 25 0 5 10 15 20 25 0 500 1000 1500 2000
SUPPLY VOLTAGE: VCC [V] SUPPLY VOLTAGE: VCC [V] OUTPUT CURRENT: IO [mA]
Fig. 1 Total Supply Current Fig. 2 Output Voltage VS Fig. 3 Output Voltage VS Load
Power Supply Voltage
3 70 6
Ta=125℃
60
RIPPLE REJECTION:R.R. [dB]
DROPOUT VOLTAGE:ΔVd[V]
1
10
0 0 0
0 100 200 300 400 500 10 100 1000 10000 100000 1000000 0 0.5 1 1.5 2
OUTPUT CURRENT: IO[mA] FREQUENCY: f [Hz] SUPPLY VOLTAGE: VSW [V]
5
CIRCUIT CURRENT: I CC [μA]
80
5.25
4
60
3 5
40
2
4.75
20
1
0 0 4.5
0 100 200 300 400 500 100 120 140 160 180 200 -40 0 40 80 120
OUTPUT CURRENT: IO[mA] AMBIENT TEMPERATURE: Ta [℃] AMBIENT TEMPERATURE: Ta [℃]
Fig. 7 Total Supply Current Fig. 8 Thermal Shutdown Circuit Fig. 9 Output Voltage VS
Classified by Load Temperature
120 2 50
DROPOUT VOLTAGE:ΔVd [V]
40
90 1.5
Ta=125℃
30
60 1
20
Ta=25℃
30 0.5
10
Ta=-40℃
0 0 0
0 5 10 15 20 25 -40 0 40 80 120 -40 0 40 80 120
SUPPLY VOLTAGE: VSW [V] AMBIENT TEMPERATURE: Ta [℃] AMBIENT TEMPERATURE: Ta [℃]
Fig. 10 SW Bias current Fig. 11 Dropout voltage VS Fig. 12 Total Supply Current
Temperature Temperature
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3/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
●Block Diagram
SW Vo Vo
210K 1K
1250K
Fig. 19
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4/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
Vo
To set the output voltage insert pull-down resistor R1 between the ADJ and GND pins,
and pull-up resistor R2 between the VO and ADJ pins.
R2
ADJ R1
Vo = VADJ×(R1+R2) / R1 [V]
{VADJ=1.26V(TYP.)}
Fig.22
The recommended connection resistor for the ADJ-GND is 30k~150kΩ.
●Setting of Heat
TO252-3 TO252-5 HRP5
2.0 2.0 2.0
IC mounted on a ROHM standard board
IC mounted on a ROHM standard board
IC mounted on a ROHM standard board 1.6 W Substrate size: 70 mm 70 mm 1.6 mm
Substrate size: 70 mm 70 mm 1.6 mm
1.6 1.6 Substrate size: 70 mm 70 mm 1.6 mm 1.6 ja = 78.1 (°C/W)
0 0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150 0 25 50 75 100 125 150
AMBIENT TEMPERATURE: Ta [°C] AMBIENT TEMPERATURE: Ta [℃] AMBIENT TEMPERATURE: Ta [°C]
Refer to the heat mitigation characteristics illustrated in Figs. 23, 24 and 25 when using the IC in an environment where Ta
≧25℃. The characteristics of the IC are greatly influenced by the operating temperature. If the temperature is in excess of
the maximum junction temperature Tjmax, the elements of the IC may be deteriorated or damaged. It is necessary to give
sufficient consideration to the heat of the IC in view of two points, i.e., the protection of the IC from instantaneous damage
and the maintenance of the reliability of the IC in long-time operation.
In order to protect the IC from thermal destruction, it is necessary to operate the IC not in excess of the maximum junction
temperature Tjmax. Fig. 23 illustrates the power dissipation/heat mitigation characteristics for the TO252 package. Operate
the IC within the power dissipation Pd. The following method is used to calculate the power consumption PC (W).
The load current IO is obtained to operate the IC within the power dissipation.
Pd-VCC×ICC
Io≦ (For more information about ICC, see page 12.)
VCC-VO
The maximum load current Iomax for the applied voltage VCC can be calculated during the thermal design process.
●Calculation example
Example: BD3571FP VCC = 12 V and VO = 5 V at Ta = 85℃
0.624-12×ICC θja=104.2℃/W→-9.6mAW/℃
IO≦
12-5 25℃=1.2W→85℃=0.624W
IO≦89mA (ICC=30μA)
Make a thermal calculation in consideration of the above so that the whole operating temperature range will be within the
power dissipation.
The power consumption Pc of the IC in the event of shorting (i.e., if the VO and GND pins are shorted) will be obtained from
the following equation.
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5/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
●Operation Notes
1) Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may
result in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when
such damage is suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a
special mode where the absolute maximum ratings may be exceeded is anticipated.
2) GND potential
Ensure a minimum GND pin potential in all operating conditions.
3) Setting of heat
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
7) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
PN junction is formed by the P layer and the N layer of each element, and a variety of parasitic elements will be
constituted.
For example, when a resistor and transistor are connected to pins as shown in Fig. 19,
the P/N junction functions as a parasitic diode when GND>Pin A for the resistor or GND>Pin B for the transistor
(NPN).
Similarly, when GND>Pin B for the transistor (NPN), the parasitic diode described above combines with the N
layer of other adjacent elements to operate as a parasitic NPN transistor.
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6/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of
the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC
malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will
trigger the operation of parasitic elements, such as by the application of voltages lower than the GND (P substrate) voltage
to input pins.
Resistor Transistor (NPN)
B (Pin B)
(Pin A) (Pin B) C E
C
B
P+ P P+ P GND
P+ P+
N
N Parasitic element or
N N N N
transistor
P P
Parasitic element
substr (Pin A)
GND t GND
Parasitic element Parasitic elements
or transistor
9) SW Pin
Do not apply the voltage to SW pin when the VCC is not applied.
And when the VCC is applied, the voltage of SW pin must not exceed VCC.
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7/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
B D 3 5 7 4 H F P - T R
TO252-3
<Tape and Reel information>
6.5±0.2 Tape Embossed carrier tape
+0.2
5.1 -0.1
C0.5 Quantity 2000pcs
1.5±0.2
2.3±0.2
0.5±0.1 E2
Direction
The direction is the 1pin of product is at the lower left when you hold
FIN of feed ( reel on the left hand and you pull out the tape on the right hand )
5.5±0.2
9.5±0.5
1.5
1 2 3
2.5
0.8
0.65 0.65
0.5±0.1
0.75
TO252-5
<Tape and Reel information>
6.5±0.2 2.3±0.2 Tape Embossed carrier tape
Quantity 2000pcs
+0.2 C0.5 0.5±0.1
5.1 -0.1
1.5±0.2
E2
Direction
The direction is the 1pin of product is at the lower left when you hold
FIN
of feed ( reel on the left hand and you pull out the tape on the right hand )
5.5±0.2
9.5±0.5
1.5
1 2 3 4 5
2.5
0.8
0.5±0.1
0.5 1.27
1.0±0.2
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8/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
BD3570FP/HFP, BD3571FP/HFP, BD3572FP/HFP, BD3573FP/HFP
BD3574FP/HFP, BD3575FP/HFP Technical Note
HRP5
9.395±0.125
<Tape and Reel information>
(MAX 9.745 include BURR)
Tape Embossed carrier tape
1.017±0.2
10.54±0.13
(7.49)
8.0±0.13
reel on the left hand and you pull out the tape on the right hand
1.523±0.15
0.835±0.2
1pin
1 2 3 4 5
1.2575 +5.5°
4.5°−4.5°
+0.1
0.27 −0.05
S
0.08±0.05
0.73±0.1
1.72 0.08 S
Direction of feed
(Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity.
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9/9 2011.03 - Rev.B
© 2011 ROHM Co., Ltd. All rights reserved.
Datasheet
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment , transport
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Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅡb
CLASSⅢ CLASSⅢ
CLASSⅣ CLASSⅢ
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7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
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2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
Notice - GE Rev.002
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Datasheet
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Datasheet
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