UNISONIC TECHNOLOGIES CO.

, LTD
30N06 Logic Level Version
Power MOSFET
60V, 38A N-CHANNEL
POWER MOSFET
1
TO-252

„ DESCRIPTION
The UTC 30N06 is a low voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and excellent avalanche 1
TO-220
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters and
battery operated products.Primary use for vehicle data transfer and
interface for wf 2812 programmable led strip.TWO LINES AT BACK
FOR IDENTIFICATION
„ FEATURES 1
TO-220F
* RDS(ON) = 40mΩ@VGS = 10 V
* Ultra low gate charge ( typical 20nC )
* Low reverse transfer Capacitance ( CRSS = typical 80 pF )
* Fast switching capability
* Avalanche energy specified 1
TO-220F2
* Improved dv/dt capability
„ SYMBOL 2.Drain

1.Gate

3.Source

„ ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
30N06L-TA3-T 30N06G-TA3-T TO-220 G D S Tube
30N06L-TF2-T 30N06G-TF2-T TO-220F2 G D S Tube
30N06L-TF3-T 30N06G-TF3-T TO-220F G D S Tube
30N06L-TN3-T 30N06G-TN3-T TO-252 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source

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Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-087.E
30N06 Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS(TC = 25℃, unless otherwise specified)

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 60 V
Gate to Source Voltage VGSS ±20 V
TC = 25℃ 30 A
Continuous Drain Current ID
TC = 100℃ 21.3 A
Pulsed Drain Current (Note 2) IDM 120 A
Single Pulsed (Note 3) EAS 300 mJ
Avalanche Energy
Repetitive (Note 2) EAR 8 mJ
TO-220 79
Power Dissipation TO-220F/ TO-220F2 PD 45 W
TO-252 44
Junction Temperature TJ +150 ℃
Operation Temperature TOPR -55 ~ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repeativity rating: pulse width limited by junction temperature
3. L=0.66mH, IAS=30A, VDD=25V, RG=20Ω, Starting TJ=25℃
„ THERMAL DATA
PARAMETER SYMBOL RATING UNIT
TO-220 62
Junction to Ambient TO-220F/TO-220F2 θJA 62.5 °C/W
TO-252 110
TO-220 1.9
Junction to Case TO-220F/TO-220F2 θJC 2.7 °C/W
TO-252 2.85

UNISONIC TECHNOLOGIES
2 of 8 . CO., LTD QW-
R502-087.E
30N06 Power MOSFET

„ ELECTRICAL CHARACTERISTICS (TC = 25℃, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 μA 60 V
Drain-Source Leakage Current IDSS VDS = 60 V, VGS = 0 V 10 μA
Forward VGS = 20V, VDS = 0 V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS = -20V, VDS = 0 V -100 nA
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID =250μA, Referenced to 25℃ 0.06 V/℃
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 15 A 32 40 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 800 pF
VGS = 0 V, VDS = 25 V,
Output Capacitance COSS 300 pF
f = 1MHz
Reverse Transfer Capacitance CRSS 80 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time tD(ON) 12 ns
Turn-On Rise Time tR VDD = 30V, ID =15 A, VGS=10V 79 ns
Turn-Off Delay Time tD(OFF) (Note 1, 2) 50 ns
Turn-Off Fall Time tF 52 ns
Total Gate Charge QG 20 30 nC
VDS = 60V, VGS = 10 V,
Gate-Source Charge QGS 6 nC
ID = 24A (Note 1, 2)
Gate-Drain Charge QGD 9 nC
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 30A 1.4 V
Maximum Continuous Drain-Source Diode
IS 30 A
Forward Current
Maximum Pulsed Drain-Source Diode
ISM 120 A
Forward Current
Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature.

UNISONIC TECHNOLOGIES
3 of 8 . CO., LTD QW-
R502-087.E
30N06 Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

UNISONIC TECHNOLOGIES
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30N06 Power MOSFET

„ TEST CIRCUITS AND WAVEFORMS (Cont.)

Switching Test Circuit Switching Waveforms

Same Type
50kΩ as D.U.T.
QG
12V 10V
0.2μF 0.3μF
VDS
QGS QGD
VGS

DUT
VG
1mA

Charge

Gate Charge Test Circuit Gate Charge Waveform

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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30N06 Power MOSFET

„ TYPICAL CHARACTERISTICS

On-State Characteristics Transfer Characteristics

VGS
Top: 15V
10V
8V
7V
102 6V 102
5.5V
5V
Bottorm: 4.5V

4.5V
101 101

Note:
1. VDS=25V
2. 20µs Pulse Test
100 100
10-1 100 101 2 3 4 5 6 7 8 9 10
Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

On-Resistance Variation vs. Drain Current and Reverse Drain Current vs. Allowable Case
Gate Voltage Temperature
100
102
80

60
150℃
VGS=10V
40 101 25℃

VGS=20V
20 *Note:
1. VGS=0V
2. 250µs Test
0.0 100
0 20 40 60 80 100 120 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain Current, ID (A) Source-Drain Voltage, VSD (V)
Gate-to-Source Voltage, VGS (V)
Capacitance (pF)

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30N06 Power MOSFET

„ TYPICAL CHARACTERISTICS(Cont.)

Drain-Source On-Resistance, RDS(ON),

Drain-Source Breakdown Voltage,
BVDSS(Normalized) (V)

(Normalized) (Ω)

Maximum Drain Current vs. Case Temperature

Maximum Safe Operating
30
100 Operation in This
Area by RDS (ON)

100µs 20
10
10ms
1ms

DC
1 10
Note:
1. TC=25℃
2. TJ=150℃
3. Single Pulse
0.1 0
1 10 100 1000 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC (℃)

Transient Thermal Response Curve

1
D=0.5

0.2
0.1
0.1
0.05
0.02

0.01 Note:
1. ZθJC (t) = 0.88℃/W Max.
0.01 2. Duty Factor, D=t1/t2
Single pulse 3. TJ -TC=PDM×ZθJC (t)

1E-5 1E-4 1E-3 0.01 0.1 1 10

Square Wave Pulse Duration, t1 (sec)

UNISONIC TECHNOLOGIES
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30N06 Power MOSFET

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES
8 of 8 . CO., LTD QW-
R502-087.E