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Fermi Level

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SRM INSTITUTE OF SCIENCE AND

TECHNOLOGY
DELHI-NCR CAMPUS, MODINAGAR,
GHAZIABAD.

MINI PROJECT REPORT-(2023-24) ODD SEM


On

FERMI ENERGY
Submitted By:

Signatur
S.N e of
Registration Name of the Branch &
o the
Number Student section
. stude
nt
SHAMBHAVI
CSE-
1. CORE(
TRIVEDI
RA2311003030051 A)
SAHARSH CSE-
2. SRIVASTA CORE(
RA2311003030052 VA A)
CSE-
3. SHAURYA NEGI CORE(
RA2311003030053 A)
4. RA2311003030054 ARCHIT CSE-
PRAMOD CORE(
MESHRAM A)

PARTH
CSE-
5. CORE(
MONGIA
RA2311003030055 A)

Subject In-Charge:
HOD
Mr. Himanshu Sharma
Assistant Professor
Department of Physics
Faculty of Engineering and Technology

FERMI LEVEL

INDEX
INTRODUCTION

1. Background
The background of this project delves into the fundamental importance of the
Fermi level in the domain of solid-state physics and semiconductor
technology. Semiconductors are at the heart of modern electronics, and the
Fermi level is a key concept in understanding how they work. This section
provides a context for the significance of the Fermi level and how it plays a
central role in various technological advancements.

Semiconductors, as materials with intermediate electrical conductivity, are the


foundation of a multitude of electronic devices, including transistors, diodes,
integrated circuits, and photovoltaic cells..
2. Purpose
The purpose of this project is to provide a comprehensive exploration of the
Fermi level in semiconductors. We aim to elucidate its definition, significance,
and how it governs various aspects of semiconductor behavior. By delving into
both intrinsic and extrinsic semiconductors, we aim to demonstrate how the
Fermi level can be manipulated and controlled to optimize the properties of
semiconductor materials for specific applications.

3. Scope
The scope of this project extends to various facets of the Fermi level, including
its position in intrinsic and extrinsic semiconductors, how it can be influenced
by temperature and doping, and its applications in devices like transistors,
photovoltaics, and LEDs.

FERMI LEVEL
2.1 Definition
The Fermi level, also known as the Fermi energy, is a concept of
paramount importance in the field of semiconductor physics and solid-
state electronics. This level represents the highest energy state within a
material that electrons can occupy at absolute zero temperature. In
essence, it is the energy boundary that divides the filled electron states
from the empty, available states for conduction.

The Fermi level can be thought of as a "cut-off" energy point, where


electrons below this level are in the valence band, tightly bound to atoms,
while those above this level are in the conduction band, free to move
through the material. It serves as a fundamental reference point in
semiconductor physics, governing various aspects of a material's behavior,
including its electrical and thermal conductivity, its ability to conduct
electrical current, and its response to external stimuli such as light.
2.2 Carrier Concentrations
The Fermi level is intricately linked to the concentration of charge
carriers within a semiconductor. Charge carriers refer to electrons and
holes, which are essential for the flow of electric current. The position of
the Fermi level within the bandgap of a semiconductor determines
whether it is an n-type or p-type material, based on its majority charge
carriers.

n-Type Semiconductors: When the Fermi level is closer to the


conduction band, the semiconductor is referred to as n-type. In n-type
semiconductors, electrons are the majority charge carriers. These
materials are known for their high electron concentrations and
excellent electrical conductivity.

p-Type Semiconductors: Conversely, when the Fermi level is closer to


the valence band, the semiconductor is considered p-type. In p-type
semiconductors, holes (missing electrons in the valence band) are the
majority charge carriers. This results in higher hole concentrations
and lower electron concentrations compared to n-type materials.

FERMI LEVEL IN INTRINSIC


SEMICONDUCTORS

3.1 Intrinsic Semiconductors Defined


Intrinsic semiconductors are crystalline materials in their pure, undoped state.
These materials, such as silicon (Si) and germanium (Ge), are known for their
ability to conduct electricity under specific conditions. What sets intrinsic
semiconductors apart is their intrinsic ability to exhibit balanced electrical
behavior. This balance is achieved at absolute zero temperature.
3.2 Fermi Level in Intrinsic Semiconductors
In the context of intrinsic semiconductors, the Fermi level assumes a unique and
specific position within the energy bandgap. The Fermi level, in intrinsic
semiconductors, is strategically placed at the
midpoint of this bandgap.

The equilibrium condition of intrinsic semiconductors, with the Fermi level in the
middle of the bandgap, is significant for several reasons:

Balanced Charge Carriers: In intrinsic semiconductors, the electron concentration


is equal to the hole concentration. This balance simplifies the mathematical
treatment of charge transport and electrical behavior in these materials.

Reference Point: In many cases, intrinsic semiconductors are used as a reference or


baseline for comparing the behavior of extrinsic (doped) semiconductors.
Understanding the Fermi level in intrinsic semiconductors provides a foundation
for comprehending how doping impacts semiconductor properties.

Temperature Dependence: As temperature increases, more electrons are excited to


the conduction band. The Fermi level in intrinsic semiconductors can shift with
temperature, influencing the electrical properties of the material. A rise in
temperature leads to an upward shift of the Fermi level, indicating a higher
concentration of free electrons.
3.3 Energy Diagram

Visualizing the Fermi level's placement in intrinsic semiconductors can be


achieved through an energy band diagram. In this diagram, the Fermi level is
depicted as exactly centered within the bandgap, highlighting the equilibrium
condition. The graphical representation of the Fermi level at the midpoint of the
bandgap underscores the unique nature of intrinsic semiconductors, where
electrons and holes coexist in perfect balance.

This equilibrium state is particularly useful for understanding the impact of


temperature on charge carrier concentrations and the electrical properties of
semiconductors. As the temperature of an intrinsic semiconductor increases, more
electrons are thermally excited from the valence band to the conduction band,
increasing the conductivity of the material. Understanding the behavior of the
Fermi level in intrinsic semiconductors provides a foundation for grasping how
temperature and doping affect the electrical characteristics of semiconductors and
their role in electronic devices.
FERMI LEVEL IN EXTRINSIC
SEMICONDUCTOR

4.1 Extrinsic Semiconductors Defined


Extrinsic semiconductors are intentionally modified by the introduction of
specific impurities or dopants into their crystalline structure. These dopants
are carefully selected to either increase the number of charge carriers
(electrons or holes) in the material. The addition of dopants provides
engineers and scientists with a powerful tool to customize the electrical
properties of semiconductors for specific applications.

There are two primary types of extrinsic semiconductors based on the type of
dopants introduced:

n-Type Semiconductors: In n-type semiconductors, electron-rich dopants,


such as phosphorus or arsenic, are added. These dopants have more valence
electrons than the semiconductor lattice, leading to the introduction of excess
free electrons in the material.

p-Type Semiconductors: In p-type semiconductors, hole-rich dopants, such as


boron or aluminum, are introduced. These dopants have fewer valence
electrons than the semiconductor lattice, leading to the generation of excess
holes (missing electrons) in the material.

4.2 Fermi Level in Extrinsic Semiconductors

The Fermi level in extrinsic semiconductors undergoes a significant shift due


to the introduction of dopants. This shift depends on the type and
concentration of the dopants and is a crucial factor in determining the
semiconductor's electrical behavior.

- **n-Type Semiconductors:** When electron-rich dopants are added to a


semiconductor lattice, the Fermi level shifts closer to the conduction band.
This shift occurs because the additional electrons introduced by the dopants
populate energy states closer to the conduction band. As a result, n-type
semiconductors have a higher concentration of free electrons, and the Fermi
level is situated closer to the conduction band, allowing for efficient electron
conduction.

- **p-Type Semiconductors:** In p-type semiconductors, hole-rich dopants


create an excess of holes in the material. These holes populate energy states
closer to the valence band, causing the Fermi level to shift in the opposite
direction, closer to the valence band. In p-type semiconductors, the Fermi
level is positioned to facilitate efficient hole conduction, and holes become the
majority charge carriers.

The control over the position of the Fermi level in extrinsic semiconductors is
a key aspect of semiconductor device engineering. By strategically choosing
the type and concentration of dopants, engineers can tailor the electrical
properties of semiconductors to meet the requirements of specific
applications. For example, transistors, diodes, and integrated circuits rely on
precisely controlling the Fermi level to modulate electrical current and
perform logic functions.

4.3 Energy Diagram

The Fermi level's shift in extrinsic semiconductors due to doping can be


visually represented through energy band diagrams. These diagrams display
the relative positions of the Fermi level, valence band, and conduction band
for both n-type and p-type semiconductors.

- In n-type semiconductors, the Fermi level is located closer to the conduction


band, indicating a higher concentration of electrons available for conduction.
- In p-type semiconductors, the Fermi level is positioned closer to the valence
band, signifying a higher concentration of holes available for conduction.

The energy band diagrams provide a clear illustration of how the Fermi
level's position impacts the majority charge carriers and, consequently, the
electrical conductivity of the material. This fundamental understanding of the
Fermi level's role in extrinsic semiconductors is pivotal for designing and
optimizing semiconductor devices for various applications, from amplifying
electronic signals in transistors to rectifying current in diodes.

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