Ch2 Nanotech
Ch2 Nanotech
Ch2 Nanotech
101751
Prof. Ehab AlShamaileh
2024
In this course we will be studying various types
of nanostructures.
The materials used to form these structures
generally have bulk properties that become
modified when their sizes are reduced to the
nanorange.
The present chapter presents background
material on bulk properties of this type.
the first layer with an atom at the location indicated by T or in the third possible
arrangement with an atom above the position marked by X on the figure. In the first
case a hexagonal lattice with a hexagonal close-packed (HCP) structure is generated,
and in the second case a face-centered cubic (FCC) lattice results. The former is easy to
visualize, but the latter is not so easy to picture.
2.1.3. Face-Centered Cubic Nanoparticles
When mass spectra were recorded for sodium nanoparticles NaN it was found
that mass peaks corresponding to the first 15 electronic magic numbers N =
3,9,20,36,61,. . . were observed for cluster sizes up to N = 1220 atoms (n = 15),
and FCC structural magic numbers starting with N = 1415 for n = 8 were observed
for larger sizes.
2.1.4. Tetrahedrally Bonded Semiconductor Structures
The lower energy bands due to the inner atomic levels are narrower and are all full of
electrons, so they do not contribute to the electronic properties of a material.
The outer or valence electrons that bond the crystal together occupy what is called a
valence band.
For an insulating material the valence band is full of electrons that cannot move since
they are fixed in position in chemical bonds. There are no delocalized electrons to carry
current, so the material is an insulator.
The conduction band is far above the valence band in energy, as shown in
Fig. 2.11a, so it is not thermally accessible, and remains essentially
empty. In other words, the heat content of the insulating material at
room temperature T = 300 K is not sufficient to raise an appreciable
number of electrons from the valence band to the conduction band, so
the number in the conduction band is negligible. Another way to express
this is to say that the value of the gap energy Eg far exceeds the value kBT
of the thermal energy, where kB is Boltzmann’s constant.
In the case of a semiconductor the gap between the valence and
conduction bands is much less, as shown in Fig. 2.1 1 b, so Eg is closer
to the thermal energy kB T, and the heat content of the material at
room temperature can bring about the thermal excitation of some
electrons from the valence band to the conduction band where they
carry current.