Features Applications

NT
IA
■ RoHS compliant* ■ HDMI 1.4

PL
M
CO ■ Low capacitance - 0.5 pF ■ Digital Visual Interface (DVI)
S
oH

■ ESD protection >15 kV ■ USB 3.0 / USB OTG

*R

■ Memory protection
■ SIM card ports

CDDFN10-0524P - Surface Mount TVS Diode Array

General Information
The CDDFN10-0524P device provides ESD, EFT and Surge protection for high-
speed data ports meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage
Suppressor array, protecting up to 4 data lines, offers a Working Peak Reverse Voltage
of 5 V and Minimum Breakdown Voltage of 6 V. Pin Pin Pin Pin
1 2 4 5
The DFN10 packaged device will mount directly onto the industry standard DFN10
footprint. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with
standard pick and place equipment and their flat configuration minimizes roll away.

Pins
3, 8

Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)

Parameter Symbol CDDFN10-0524P Unit

Peak Pulse Power (tp = 8/20 μS) Ppp 30 W
Peak Pulse Current (tp = 8/20 μS) Ipp 3.8 A
Operating Voltage (I/O pin - GND) VDC 6 V
Storage Temperature TSTG -55 to +150 ºC
Operating Temperature TOPR -55 to +85 ºC

Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)

Parameter Symbol Min. Typ. Max. Unit

Breakdown Voltage @ 1 mA VBR 6 V
Reverse Standoff Voltage VRWM 5 V
Forward Voltage If =15 mA
VF 0.9 1.1 V
(Gnd to I/O Pin)
Channel Leakage Current
ID 1.5 μA
VRWM = 5 V, (I/O Pin to Gnd)
Clamping Voltage
IEC 61000-4-2 +6 kV, VC 12 V
Contact mode (I/O Pin to Gnd)
Channel Input Capacitance
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ CIN 0.5 0.65 pF
(I/O Pin to Gnd)
Channel to Channel Input Capacitance
Vpin3,8=0 V, Vin=2.5 V, f=1 MHZ CCROSS 0.04 0.08 pF
(Between I/O pins)
ESD Protection per IEC 6-1000-4-2
Contact Discharge 8 10 kV
Air Discharge 15 15
ESD Dynamic Turn-on Resistance
Rdynamic 0.3 Ω
(any I/O Pin to Gnd)
EFT Protection per IEC 61000-4-4
40 A
@ 5/50 ns
Surge Protection per IEC 61000-4-5
3.8 A
@ 8/20 μs

*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
 CDDFN10-0524P - Surface Mount TVS Diode Array

Product Dimensions Recommended Footprint

This is a molded DFN10 package with lead free 100 % Matte sn on 0.2 0.4
(.008) (.016)
the lead frame. It weighs approximately 7 mg and has a flammability
rating of UL 94V-0.
PIN 1 1.000 ± 0.050
MARKING (.039 ± .002)

1.55
(.061)
0.875 0.20
(.034) (.008)
2.500 ± 0.050
(.098 ± .002)
0.675
(.027)

0.50
(.020)
PIN 1 1.00
IDENTIFICATION (.039)
0.400 ± 0.050
CHAMFER
(.016 ± .002)
0.100
0.500 X 45 °
BSC (.039)
(.020) Typical Part Marking
0.100 CDDFN10-0524P ........................................................................524
R
(.039)
0.400 ± 0.050 1.950
(.016 ± .002) (.077)
REF.
How to Order
0.05
TYP. 0.250 ± 0.050
(.002) CD DFN10 - 05 24 P
(.008 ± .002)

Common Diode
Chip Diode
0.200 ± 0.050 Package
(.008 ± .002)
DFN10 = DFN-10 Package
Working Peak Reverse Voltage
0.50 - 0.60 05 = 5 VRWM (Volts)
(0.020 - 0.024) Number of Lines
24 = 2 Ground / 4 Data Lines
Suffix
P = Ultra-low Capacitance

0.000 - 0.050 0.152

(.000 - .002) (.006)
REF.

MM
DIMENSIONS:
(INCHES)

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.
 CDDFN10-0524P - Surface Mount TVS Diode Array

Rating & Characteristic Curves

Typical Variation CIN vs VIN Typical Variation of CIO-to-IO vs VIN

1.0 0.10
0.9 0.09
0.8 0.08
Input Capacitance (pF)

Input Capacitance (pF)

0.7 0.07
0.6 0.06
0.5 0.05
0.4 0.04
0.3 0.03
0.2 0.02
f = 1 MHz, f = 1 MHz,
0.1 T = 25 °C 0.01 T = 25 °C
0.0 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Input Voltage (V) Input Voltage (V)

Insertion Loss S21 (I/O-to-GND) Analog Cross Talk

0 20
-3 10
-6 0
Insertion Loss (dB)

Analog Cross Talk (dB)

-9 -10
-12 -20
-15 -30
-18
-40
-21
-50
-24 3 GHz: -0.92 dB -60
-27 4.3 GHz: -3 dB
-70
-30
1e+8 1e+9 -80
1e+8 1e+9
Frequency (Hz)
Frequency (Hz)

Transmission Line Pulsing (TLP) Data Lines Connection

I/O 1 data line I/O 1
To To
18 I/O-Port Protected
Transmission Line Pulsing (TLP) Current (A)

Connector data line I/O 2 IC

16
V_pulse
14
Pulse from a Line-1
transmission line 1 10 NC
12 TLP_I
100 ns +
10 TLP_V
Line-2
2 9 NC
8 -
GND GND
3 8
6
Line-3
4 4 7 NC

2 I/O to GND Line-4

5 6 NC
0
I/O 3 data line I/O 3
0 2 4 6 8 10 12 14
To To
Transmission Line Pulsing (TLP) Voltage (V) I/O-Port Protected
I/O 4 data line I/O 4
Connector IC

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.
 CDDFN10-0524P - Surface Mount TVS Diode Array

Packaging Information
The product is packaged in an 8 mm x 4 mm tape and reel format per EIA-481-A standard.

P
0
P E T
1
d Index Hole
Pin 1
Location 120 °
F D2
W
B
D1 D

P A C

Trailer Device Leader

....... ....... ....... ....... W1

End Start
....... ....... ....... ....... MM
DIMENSIONS:
(INCHES)
10 pitches (min.) 10 pitches (min.)

Direction of Feed

Item Symbol DFN-10

1.45 ± 0.05
Carrier Width A
(0.057 ± 0.002)
2.95 ± 0.05
Carrier Length B
(0.116 ± 0.002)
0.90 ± 0.05
Carrier Depth C
(0.035 ± 0.002)
1.55 ± 0.05
Sprocket Hole d
(0.061 ± 0.002)
178
Reel Outside Diameter D
(7.008)
50.0
Reel Inner Diameter D1 MIN.
(1.969)
13.0 ± 0.20
Feed Hole Diameter D2 Asia-Pacific:
(0.512 ± 0.008)
1.75 ± 0.10
Tel: +886-2 2562-4117
Sprocket Hole Position E Fax: +886-2 2562-4116
(0.069 ± 0.004)
3.50 ± 0.05 Europe:
Punch Hole Position F Tel: +41-41 768 5555
(0.138 ± 0.002)
4.00 ± 0.10 Fax: +41-41 768 5510
Punch Hole Pitch P
(0.157 ± 0.004) The Americas:
4.00 ± 0.10 Tel: +1-951 781-5500
Sprocket Hole Pitch P0
(0.157 ± 0.004) Fax: +1-951 781-5700
Embossment Center P1
2.00 ± 0.05 www.bourns.com
(0.079 ± 0.002)
0.20 ± 0.10
Overall Tape Thickness T
(0.008 ± 0.004)
8.00 ± 0.20
Tape Width W
(0.315 ± 0.008)
14.4
Reel Width W1 MAX.
(0.567)
Quantity per Reel -- 3000 REV. 08/17/12
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.