Power Transistors

2SC5546
Silicon NPN triple diffusion mesa type
Unit: mm
For horizontal deflection output 15.5±0.5 φ 3.2±0.1 3.0±0.3
5˚
5˚

(10.0)

(4.5)
■ Features

(23.4)
26.5±0.5

22.0±0.5
• High breakdown voltage, and high reliability through the use of a

(1.2)
glass passivation layer

(2.0)
5˚
• High-speed switching (4.0) 5˚
5˚
• Wide area of safe operation (ASO) 2.0±0.2

(2.0)
Solder Dip
18.6±0.5
1.1±0.1
0.7±0.1

■ Absolute Maximum Ratings TC = 25°C 5.45±0.3

10.9±0.5
Parameter Symbol Rating Unit

5.5±0.3
3.3±0.3
Collector to base voltage VCBO 1 700 V 5˚
1 2 3
Collector to emitter voltage VCES 1 700 V 1 : Base
2 : Collector

(2.0)
VCEO 600 V
3 : Emitter
Emitter to base voltage VEBO 7 V TOP-3E-A1 Package
Peak collector current ICP 30 A
Marking Symbol: C5546
Collector current IC 18 A
Base current IB 8 A Internal Connection
Collector power TC = 25°C PC 70 W
dissipation Ta = 25°C 3.5 C

Junction temperature Tj 150 °C B

Storage temperature Tstg −55 to +150 °C
E

■ Electrical Characteristics TC = 25°C

Parameter Symbol Conditions Min Typ Max Unit
Collector cutoff current ICBO VCB = 1 000 V, IE = 0 50 µA
VCB = 1 700 V, IE = 0 1 mA
Emitter cutoff current IEBO VEB = 7 V, IC = 0 50 µA
Forward current transfer ratio hFE VCE = 5 V, IC = 10 A 6 12
Collector to emitter saturation voltage VCE(sat) IC = 10 A, IB = 2.5 A 3 V
Base to emitter saturation voltage VBE(sat) IC = 10 A, IB = 2.5 A 1.5 V
Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
Storage time tstg IC = 10 A, Resistance loaded 3.0 µs
Fall time tf IB1 = 2.5 A, IB2 = −5.0 A 0.2 µs

267
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2001 MAR