MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

A
D
R R
N X (15 TYP.)
R

1. V UPC 14. V NI
123 4 5678 9 11 13 15 17 19
2. U FO 15. B R
10 12 14 16 18 3. U P 16. U N
T - DIA. 4. V UPI 17. V N
5. V VPC 18. W N
H J (2 TYP.) G F 6. V FO 19. F O
S 7. V P 20. P
20 21 22 23 24 25
8. V VPI 21. B
9. V WPC 22. N
10. WFO 23. U
P P P P P 11. WP 24. V
12. V WPI 25. W
M 13. V NC Description:
E
C Mitsubishi Intelligent Power Mod-
B Y ules are isolated base modules de-
2.0 X 0.5 MM PIN
signed for power switching applica-
(6 TYP.) tions operating at frequencies to
0.8 X 0.4 MM PIN U 20kHz. Built-in control circuits pro-
V (19 TYP.) K K vide optimum gate drive and pro-
W tection for the IGBT and free-wheel
L
Q diode power devices.

Features:
V WPC

V UPC
V VPC
V WPI

V VPI
WFO

V UPI

u Complete Output Power

U FO
V FO
VNC

V N1

WP
WN

UP
VP
UN
BR

FO

VN

Circuit
TC
u Gate Drive Circuit
OUT V CC

V CC

OUT V CC

OUT V CC

OUT V CC
GND GND

GND

GND GND

GND GND

GND GND
WN
FO

FO

FO

FO

FO
VN

UN
IN

IN

IN

IN

TB
S WN

OWN

u Protection Logic
S UN

OUN
S VN
OVN

GND
SI

SI

SI

SI

– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
B N W V U P

Applications:
u Inverters
Outline Drawing and Circuit Diagram
u UPS
Dimensions Inches Millimeters Dimensions Inches Millimeters u Motion/Servo Control
A 3.86±0.04 98.0±1.0 N 0.512 13.02 u Power Supplies
B 3.42±0.02 87.0±0.5 P 0.450±0.012 11.43±0.3
Ordering Information:
C 2.99 76.0 Q 0.31±0.02 8.0±0.5
Example: Select the complete
D 2.400±0.03 60.96±0.8 R 0.300 7.62
part number from the table below
E 2.250±0.03 57.15±0.8 S 0.24 Rad. Rad. 6.0 -i.e. PM30RSF060 is a 600V,
F 2.20±0.04 56.0±1.0 T 0.22 Dia. Dia. 5.5 30 Ampere Intelligent Power Mod-
G 1.77±0.03 45.0±0.8 U 0.16 4.0 ule.
H 1.14 29.0 V 0.14 3.5 Type Current Rating VCES
J 0.83 21.0 W 0.12±0.02 3.0±0.5 Amperes Volts (x 10)
K 0.69 17.5 X 0.100±0.012 2.54±0.3 PM 30 60
L 0.71±0.04 18.0±1.0 Y 0.04 1.0
M 0.588 14.925

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM30RSF060 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M5 Mounting Screws — 1.47 ~ 1.96 N·m
Module Weight (Typical) — 80 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 400 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN-VNC) VCIN 20 Volts
Fault Output Supply Voltage (Applied between UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts
Fault Output Current (Sink Current of UFO, VFO, WFO and FO Terminal) IFO 20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, ± IC 30 Amperes
Peak Collector Current, ± ICP 60 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC 83 Watts

Brake Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 600 Volts
Collector Current, (TC = 25°C) IC 10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P - N) VCC 450 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 500 Volts
Collector Dissipation PC 39 Watts
Diode Forward Current IF 10 Amperes
Diode DC Reverse Voltage VR(DC) 600 Volts

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 39 53 — Amperes
Over Current Trip Level Brake Part 12 18 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V — 80 — Amperes
Short Circuit Trip Level Brake Part — 27 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Level 100 110 120 °C
OTr Reset Level — 90 — °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVr Reset Level — 12.5 — Volts
Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current ID VD = 15V, VCIN = 15V, VN1-VNC — 25 30 mA
VD = 15V, VCIN = 15V, VXP1-VXPC — 7 10 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA
VCE = VCES, Tj = 125°C — — 10 mA
Diode Forward Voltage VEC -IC = 30A, VD = 15V, VCIN = 15V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 30A — 1.8 2.5 Volts
VD = 15V, VCIN = 0V, IC = 30A, — 1.9 2.6 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.3 0.6 1.5 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.12 0.3 µs
tC(on) VCC = 300V, IC = 30A — 0.3 1.0 µs
toff Tj = 125°C — 2.0 2.8 µs
tC(off) — 0.6 1.5 µs

Brake Sector
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, — 2.6 3.5 Volts
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 10A, — 2.9 4.0 Volts
Tj = 125°C
Diode Forward Voltage VFM IF = 10A — 1.5 2.5 Volts
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1 mA
VCE = VCES, Tj = 125°C — — 10 mA

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 1.5 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 3.0 °C/Watt
Rth(j-c)Q Brake IGBT — — 3.2 °C/Watt
Rth(j-c)F Brake FWDi — — 4.5 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.067 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across P-N Terminals 0 ~ 400 Volts
VD Applied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP-VUPC, VP-VVPC, WP-VWPC, 4.0 ~ VD Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 2.5 µs

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Inverter Part

SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS

CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL)

5 3.0 40
VD = 15V IC = 30A Tj = 25oC
COLLECTOR-EMITTER SATURATION VOLTAGE

VCIN = 0V
SATURATION VOLTAGE VCE(sat), (VOLTS)

VCIN = 0V VCIN = 0V

COLLECTOR CURRENT, IC, (AMPERES)

4 Tj = 25oC Tj = 25oC 15
Tj = 125oC Tj = 125oC 30
VD = 17V 13
2.0
VCE(sat), (VOLTS)

3
20
2
1.0
10
1

0 0 0
0 10 20 30 40 0 12 14 16 18 20 0 0.5 1.0 1.5 2.0 2.5
COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING TIME VS. SWITCHING TIME VS. REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL)

101 101 102

VCC = 300V VCC = 300V
REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VCC = 300V
VD = 15V VD = 15V VC = 15V
Inductive Load Inductive Load Inductive Load
SWITCHING TIMES, tc(on), tc(off), (µs)

Tj = 25oC Tj = 25oC
SWITCHING TIMES, ton, toff, (µs)

Tj = 25oC
Tj = 125oC Tj = 125oC Tj = 125oC
toff

100 100 101

ton tc(off)

tc(on)

10-1 10-1 100

100 101 102 100 101 102 100 101 102
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS. OVER CURRENT TRIP LEVEL VS.
DIODE FORWARD CHARACTERISTICS SUPPLY VOLTAGE (TYPICAL) TEMPERATURE (TYPICAL)

102 110 110

COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

VD = 15V Tj = 25oC VD = 15V

OVER CURRENT TRIP LEVEL % (NORMALIZED)
OVER CURRENT TRIP LEVEL % (NORMALIZED)

VCIN = 15V
Tj = 25oC 100
100
Tj = 125oC
90
90
101 80
80
70

70
60

100 0 0
0 1.0 2.0 3.0 0 12 14 16 18 20 -50 0 50 100 150
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SUPPLY VOLTAGE, VD, (VOLTS) JUNCTION TEMPERATURE, Tj, (oC)

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Inverter Part

CONTROL SUPPLY VOLTAGE TRIP-RESET TRANSIENT THERMAL

FAULT OUTPUT PULSE WIDTH VS. LEVEL TEMPERATURE DEPENDENCY IMPEDANCE CHARACTERISTICS
TEMPERATURE (TYPICAL) (TYPICAL) (Each IGBT)

TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

2.5 15 101
VD = 15V UVt
UVr
FAULT OUTPUT PULSE WIDTH, tFO (ms)

2.0 14
100
UV TRIP-RESET LEVEL,

13
UVt, UVr, (VOLTS)

1.5
12 10-1
1.0
11
10-2
.5
10 SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.5oC/W

0 0 10-3
-50 0 50 100 150 -50 0 50 100 150 10-3 10-2 10-1 100 101
JUNCTION TEMPERATURE, Tj, (oC) JUNCTION TEMPERATURE, TC, (oC) TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

101

100

10-1

10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)D = 3.0oC/W

10-3
10-3 10-2 10-1 100 101
TIME, (s)

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM30RSF060
FLAT-BASE TYPE
INSULATED PACKAGE

Brake Part

SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS

CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL)

5 4 20
Tj = 25oC
COLLECTOR-EMITTER SATURATION VOLTAGE
SATURATION VOLTAGE VCE(sat), (VOLTS)

VCIN = 0V

COLLECTOR CURRENT, IC, (AMPERES)

MAX 15 13
MAX
4 TYP
3 15 MAX
VD = 17V
TYP
15 MAX
VCE(sat), (VOLTS)

3 TYP

2 10
2

VD = 15V 1 VCIN = 0V 5
1 VCIN = 0V IC = 10A
Tj = 25oC Tj = 25oC
Tj = 125oC Tj = 125oC
0 0 0
0 5 10 15 20 0 12 14 16 18 20 0 1 2 3 4 5
COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
DIODE FORWARD CHARACTERISTICS (IGBT) (FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

102 101 101

VD = 15V
DIODE FORWARD CURRENT, IF, (AMPERES)

VCIN = 15V
Tj = 25oC
Tj = 125oC 100 100

TYP MAX

101 10-1 10-1

10-2 10-2
SINGLE PULSE SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 3.2oC/W STANDARD VALUE = Rth(j-c)D = 4.5oC/W
100 10-3 10-3
0 0.5 1.0 1.5 2.0 2.5 3.0 10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
DIODE FORWARD VOLTAGE, VF, (VOLTS) TIME, (s) TIME, (s)

Sep.1998