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2018 Focus Focus Compact Modeling

Focus Compact Modeling

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mick
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5 views

2018 Focus Focus Compact Modeling

Focus Compact Modeling

Uploaded by

mick
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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FOCUS MICROWAVES GROUP

Focus Compact Modeling

The intuitive advanced compact model

V01/19 powered by FOCUS MICROWAVES


Introduction

The Focus Compact Model (FCM) utility is a streamlined Pulsed IV & S-Parameter Meas. Setup
software package designed to be used with Focus’ AURIGA
high-end pulse system, that is used to generate Compact
Models for transistors from their Pulsed-IV and wideband
pulsed s-parameter data.

This is achieved by generating a network of lumped circuit


elements that represent accurately the fundamental linear
& non-linear behaviour of the device over a broad range of
bias and power range.

The result of the modelling is a netlist and compatible with-


the most common CAD tools used in RF Design such as
AWR Microwave office (MWO) and Keysight Advanced De-
sign Studio (ADS).

Key features of the FCM:


Linear and Non-Linear Compact Transistor Model Extraction
of III-V materials (GaN HEMT or similar model).
High frequency FET model parameters from a combination
of DC and S-parameter measurements.
Gate-lag and drain-lag trapping.
Basic thermal model extraction.

Linear Model:
8 Extrinsic parameters (RG, RD, RS, LG, LD, LS, CPG, CPD )
8 Bias dependent Intrinsic parameters (RGD, Ri, CGS, CGD,
CDS, GM, RDS, & Γ)

Non-Linear Model:
NL Capacitances CGS & CGD
NL Current Sources IDS
NL Diodes DGS & DGD
Export Capability to ADS and MWO.

Simulation Measurements

2 www.focus-microwaves.com
Equivalent Circuit HemT

The purpose of electrical representation or equivalent cir- AlGaN/GaN HEMT transistor


cuit of HEMT or any transistor in the form of lumped circuit
elements is to implement and simulate its static and RF be-
haviour in CAD tools. This technique is particularly useful
and often directly correlated to physical entities within the
device structure, as illustrated below.

This is divided into two parts:


i) The Intrinsic part where the region under the gate (modu-
lation occurs here) represented with a set of 8 intrinsic ele-
ments (RGD, Ri, CGS, CGD, CDS, GM, RDS, Γ).

ii) The Extrinsic part represented with a set of 8 extrinsic


elements (RG, RD, RS, LG, LD, LS, CPG, CPD). These ele-
ments need to be extracted for small signal model imple-
mentation. The extraction process will be discussed in the
following section.

Keysight ADS Data Display

www.focus-microwaves.com 3
Extraction & Example

Linear Elements Extraction EDA Example


The linear model extraction is a crucial step as this will be The Focus Compact Model portfolio is fully supported in all
the basis for the non-linear model development. major EDS tools including AWR Microwave office and Key-
sight Advanced Design System.
i) From a set of initial extrinsic values, de-embedding of
S-parameters is done at the intrinsic reference plane of the
transistor.

ii) Using these intrinsic S-parameter measurements, an ex-


plicit calculation of the intrinsic elements is achieved for
each frequency. These intrinsic parameters need to be inde-
pendent of frequency and this condition is checked during
the optimization process.

iii) If the intrinsic elements depend on the frequency, a new


set of extrinsic elements are provided.

iv) An optimization algorithm is used in a loop to generate


iterative steps for the extrinsic parameters that give a correct
set of extrinsic elements. These elements are independent
of bias.

Optimisation Process

4 info@focus-microwaves.com +1 514 684 4554 www.focus-microwaves.com

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