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Lecture4 PIN Diodes

Pin diode

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26 views12 pages

Lecture4 PIN Diodes

Pin diode

Uploaded by

nyawanchabohzeddy
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ECE121: Electronics (1)

Lecture 4: The PIN Diodes

Dr. Haitham El-Hussieny


Electronics and Communications Engineering
Faculty of Engineering (Shoubra)
Benha University

Spring 2017

Dr. Haitham El-Hussieny ECE121: Electronics (1) 1/5


Introduction.

Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.

Dr. Haitham El-Hussieny ECE121: Electronics (1) 2/5


Introduction.

Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.

Dr. Haitham El-Hussieny ECE121: Electronics (1) 2/5


Introduction.

Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm−3 .

Dr. Haitham El-Hussieny ECE121: Electronics (1) 2/5


Introduction.

Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm−3 .
The outside p- and n- layers are usually very highly
doped. The wide intrinsic layer provides unique
features of high breakdown voltage in reverse bias.

Dr. Haitham El-Hussieny ECE121: Electronics (1) 2/5


Introduction.

Introduction:

A P-i-N diode consists of an intrinsic layer


sandwiched between a pn junction.
It blocks the negative voltage and conducts current
when a positive voltage is applied to the anode.
The intrinsic layer has a very low concentration of
(generally) n-type in the order of 1013 cm−3 .
The outside p- and n- layers are usually very highly
doped. The wide intrinsic layer provides unique
features of high breakdown voltage in reverse bias.
In the forward bias, both types of carriers are
injected into the intrinsic layer. The current
conduction is through carrier recombination in the
middle layer.
Dr. Haitham El-Hussieny ECE121: Electronics (1) 2/5
Introduction.

Characteristics of P-i-N Diode:


When reverse-biased, the pin diode acts like a nearly constant capacitance. When
forward-biased, it acts like a current-controlled variable resistance.
Reverse Biased

Dr. Haitham El-Hussieny ECE121: Electronics (1) 3/5


Introduction.

Characteristics of P-i-N Diode:


When reverse-biased, the pin diode acts like a nearly constant capacitance. When
forward-biased, it acts like a current-controlled variable resistance.
Reverse Biased Forward Biased

Dr. Haitham El-Hussieny ECE121: Electronics (1) 3/5


Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used as a high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.

Dr. Haitham El-Hussieny ECE121: Electronics (1) 4/5


Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used as a high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.

RF switch:
The PIN diode makes an ideal RF switch. The intrinsic layer between the P and N regions
increases the distance between them. This also decreases the capacitance between them,
thereby increasing he level of isolation when the diode is reverse biased.

Dr. Haitham El-Hussieny ECE121: Electronics (1) 4/5


Introduction.

PIN diode uses and advantages:


High voltage rectifier:
The PIN diode can be used as a high voltage rectifier. The intrinsic region provides a greater
separation between the P and N regions, allowing higher reverse voltages to be tolerated.

RF switch:
The PIN diode makes an ideal RF switch. The intrinsic layer between the P and N regions
increases the distance between them. This also decreases the capacitance between them,
thereby increasing he level of isolation when the diode is reverse biased.

Photodetector:
Light striking the crystal lattice can release holes and electrons which are drawn away out of
the depletion region by the reverse bias on the diode. By having a larger depletion region - as
in the case of a PIN diode - the volume for light reception is increased. This makes PIN diodes
ideal for use as photodetectors.
Dr. Haitham El-Hussieny ECE121: Electronics (1) 4/5
Introduction.

End of Lecture

Best Wishes

haitham.elhussieny@gmail.com

Dr. Haitham El-Hussieny ECE121: Electronics (1) 5/5

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