SUD50P06-15

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Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
FEATURES
TO-252
TO
• TrenchFET® power MOSFET
Drain connected to tab • Material categorization:
for definitions of compliance please
see www.vishay.com/doc?99912

APPLICATIONS
S
• Load switch
S
D
G
Top View
G

PRODUCT SUMMARY
VDS (V) -60
RDS(on) max. () at VGS = -10 V 0.015
RDS(on) max. () at VGS = -4.5 V 0.020 D
ID (A) d -50 P-Channel MOSFET
Configuration Single

ORDERING INFORMATION
Package TO-252
SUD50P06-15-GE3
Lead (Pb)-free and halogen-free
SUD50P06-15-T4-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS -60
V
Gate-source voltage VGS ± 20
TC = 25 °C -50 d
Continuous drain current (TJ = 175 °C) ID
TC = 125 °C -27.5
A
Pulsed drain current IDM -80
Avalanche current IAS -50
Single pulse avalanche energy a L = 0.1 mH EAS 125 mJ
TC = 25 °C 113 c
Power dissipation PD W
TA = 25 °C 2.5 b, c
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT
t  10 s 15 18
Junction-to-ambient b RthJA
Steady state 40 50 °C/W
Junction-to-case RthJC 0.82 1.1
Notes
a. Duty cycle  1%
b. When mounted on 1" square PCB (FR4 material)
c. See SOA curve for voltage derating
d. Package limited

S19-0387 Rev. D, 29-Apr-2019 1 Document Number: 68940

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUD50P06-15
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Vishay Siliconix

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = -250 μA -60 - -
V
Gate threshold voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -3
Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA
VDS = -60 V, VGS = 0 V - - -1
Zero gate voltage drain current IDSS VDS = -60 V, VGS = 0 V, TJ = 125 °C - - -50 μA
VDS = -60 V, VGS = 0 V, TJ = 150 °C - - -100
On-state drain current a ID(on) VDS = -5 V, VGS = -10 V -50 - - A
VGS = -10 V, ID = -17 A - 0.012 0.015
VGS = -10 V, ID = -50 A, TJ = 125 °C - - 0.025
Drain-source on-state resistance a RDS(on) 
VGS = -10 V, ID = -50 A, TJ = 150 °C - - 0.028
VGS = -4.5 V, ID = -14 A - - 0.020
Forward transconductance a gfs VDS = -15 V, ID = -17 A - 61 - S
Dynamic b
Input capacitance Ciss - 4950 -
Output capacitance Coss VGS = 0 V, VDS = -25 V, f = 1 MHz - 480 - pF
Reverse transfer capacitance Crss - 405 -
Total gate charge c Qg - 110 165
Gate-source charge c Qgs VDS = -30 V, VGS = -10 V, ID = -50 A - 19 - nC
Gate-drain charge c Qgd - 28 -
Turn-on delay time c td(on) - 15 23
Rise time c tr VDD = -30 V, RL = 0.6  - 70 105
ns
Turn-off delay time c td(off) ID  -50 A, VGEN = -10 V, RG = 6  - 175 260
Fall time c tf - 175 260
Source-Drain Diode Ratings and Characteristics TC = 25 °C b
Continuous current IS - - -50
A
Pulsed current ISM - - -80
Forward voltage a VSD IF = -50 A, VGS = 0 V - -1 -1.6 V
Reverse recovery time trr IF = -50 A, di/dt = 100 A/μs - 45 70 ns
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S19-0387 Rev. D, 29-Apr-2019 2 Document Number: 68940

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUD50P06-15
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

80 80
VGS = 10 thru 4 V
70 70

60 60
I D - Drain Current (A)

I D - Drain Current (A)

50 50

40 40

30 30
3V TC = 125 ° C
20 20
25 ° C
10 10
- 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

100 0.025

TC = - 55 °C 25 °C
0.020
R DS(on) - On-Resistance (Ω)

80
125 °C
g fs - Transconductance (S)

VGS = 4.5 V

60 0.015
VGS = 10 V

40 0.010

20 0.005

0 0.000
0 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80

VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)

Transconductance On-Resistance vs. Drain Current

8000 10

7000
VDS = 30 V
VGS - Gate-to-Source Voltage (V)

8 ID = 50 A
6000
C - Capacitance (pF)

Ciss
5000
6

4000

4
3000

2000
2
1000 Coss

Crss
0 0
0 10 20 30 40 50 60 0 20 40 60 80 100 120

VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance Gate Charge

S19-0387 Rev. D, 29-Apr-2019 3 Document Number: 68940

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 SUD50P06-15
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Vishay Siliconix
TYPICAL CHARACTERISTICS
2.0 100
VGS = 10 V
ID = 17 A
R DS(on) - On-Resistance (Normalized)

1.8

1.6

I S - Source Current (A)

TJ = 150 °C
1.4 TJ = 25 °C
10
1.2

1.0

0.8

0.6 1
- 50 - 25 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)

On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage

THERMAL RATINGS (25 °C, unless otherwise noted)

Axis Title Axis Title
60 10000 100 10000
Package limited
50 100 μs
ID - Drain Current (A)

ID - Drain Current (A)

40 1000 10 1000
1 ms
2nd line
1st line

2nd line
2nd line

1st line
2nd line

30 Limited by RDS(on) (1)

10 ms

20 100 1 1001s
100 ms,

10
TC = 25 °C
Single pulse BVdss Limited
0 10 0.1 10
0 25 50 75 100 125 150 0.1 1 10 100
TC - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
(1) V
2nd line GS > minimum VGS at which RDS(on) is specified

Drain Current vs. Case Temperature Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1

0.05

0.02

Single Pulse

0.01
10 -4 10 -3 10 -2 10 -1 1
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon
technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68940.

S19-0387 Rev. D, 29-Apr-2019 4 Document Number: 68940

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
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Vishay Siliconix
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
E A
C2
b3

L3

D1
D

H
E1
L4
L5

L
gage plane height (0.5 mm)
b b2 C
e
A1
e1

MILLIMETERS
DIM. MIN. MAX.
A 2.18 2.38
A1 - 0.127
b 0.64 0.88
b2 0.76 1.14
b3 4.95 5.46
C 0.46 0.61
C2 0.46 0.89
D 5.97 6.22
D1 4.10 -
E 6.35 6.73
E1 4.32 -
H 9.40 10.41
e 2.28 BSC
e1 4.56 BSC
L 1.40 1.78
L3 0.89 1.27
L4 - 1.02
L5 1.01 1.52
Note
• Dimension L3 is for reference only

Revision: 03-Oct-2022 1 Document Number: 71197

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
VERSION 2: FACILITY CODE = N

e
E A
b3
E1
e c2 E1/2

θ
θ

D1
L3
D

H
L6

L5
L4

2x b2
3x b DETAIL "B"
2x e (b)
0.25 C A B

c
(3°) (3°)

c1
H
C b1
GAUGE
PLANE SEATING DETAIL "B"
C C
L PLANE
θ
L2

A1
(L1)

MILLIMETERS MILLIMETERS
DIM. MIN. MAX. DIM. MIN. MAX.
A 2.18 2.39 L 1.50 1.78
A1 - 0.13 L1 2.74 ref.
b 0.65 0.89 L2 0.51 BSC
b1 0.64 0.79 L3 0.89 1.27
b2 0.76 1.13 L4 - 1.02
b3 4.95 5.46 L5 1.14 1.49
c 0.46 0.61 L6 0.65 0.85
c1 0.41 0.56  0° 10°
c2 0.46 0.60 1 0° 15°
D 5.97 6.22 2 25° 35°
D1 5.21 - Notes
E 6.35 6.73 • Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
E1 4.32 -
• Heat sink side flash is max. 0.8 mm
e 2.29 BSC • Radius on terminal is optional
H 9.94 10.34







ECN: E22-0399-Rev. R, 03-Oct-2022

DWG: 5347

Revision: 03-Oct-2022 2 Document Number: 71197

For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

0.224
(5.690)

(6.180)
0.243
(10.668)
0.420

(2.202)
0.087
(2.286)
0.090

0.180 0.055
(4.572) (1.397)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72594 www.vishay.com

Revision: 21-Jan-08 3
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Revision: 01-Jul-2024 1 Document Number: 91000

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000