2N2222

Low Power Bipolar Transistors

Features:
• NPN Silicon Planar Switching Transistors.
• Switching and Linear application DC and VHF Amplifier applications.

TO-18 Metal Can Package

Dimensions Minimum Maximum

A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76

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2N2222
Low Power Bipolar Transistors
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70 -
L 45°
Dimensions :
Millimetres

Pin Configuration:
1. Emitter
2. Base
3. Collector
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Description Symbol 2N2222 Unit

Collector Emitter Voltage VCEO 30

Collector Base Voltage VCBO 60 V

Emitter Base Voltage VEBO 5

Collector Current Continuous IC 800 mA

Power Dissipation at Ta = 25°C Derate 500 mW

above 25°C 2.28 mW/°C
PD
Power Dissipation at TC = 25°C Derate 1.2 W
above 25°C 6.85 mW/°C

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2N2222
Low Power Bipolar Transistors

Operating and Storage Junction Temperature Range TJ, Tstg -65 to +200 °C

Electrical Characteristics (Ta = 25°C unless specified otherwise)

Value
Description Symbol Test Condition Unit
Minimum Maximum
Collector Emitter Breakdown Voltage BVCEO IC = 10mA, IB = 0 30 -

Collector Base Breakdown Voltage BVCBO IC = 10µA, IE = 0 60 - V

Emitter Base Breakdown Voltage VEBOf IE = 10µA, IC = 0 5 -

Collector Leakage Current VCB = 50V, IE = 0 -

10
VCB = 50V, IE = 0 nA
ICBO Ta = 150°C 10 µA
IC = 150mA, IB = 15mA 0.4
Collector Emitter Saturation Voltage *VCE (Sat) - 1.6
IC = 500mA, IB = 50mA
V
IC = 150mA, IB = 15mA 1.3
Base Emitter Saturation Voltage *VBE (Sat) 0.6 2.6
IC = 500mA, IB = 50mA

Electrical Characteristics (Ta = 25°C unless specified otherwise)

2N2222 Unit
Parameter Symbol Test Condition
Minimum Maximum
IC = 0.1mA, VCE = 10V* 35
IC = 1mA, VCE = 10V 50
75
IC = 10mA, VCE = 10V*
50
IC = 150mA, VCE = 1V* 100
DC Current Gain hFE -
IC = 150mA, VCE = 1V* 30
IC = 500mA, VCE = 10V*

300
Dynamic Characteristics
IC = 20mA, VCE = 20V
Transition Frequency ft f = 100MHz 250 - MHz

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2N2222
Low Power Bipolar Transistors
VCB = 10V, IE = 0
Output Capacitance Cob f = 100kHz - 8
pF
VEB = 0.5V, IC = 0
Input Capacitance Cib f = 100kHz - 30

Switching Characteristics
Delay Time td
IC = 150mA,IB1 = 15mA - 10
ns
Rise Time tr VCC = 30V, VBE (off) = 0.5V - 25

Storage Time IC = 150mA, IB1 = 15mA -

ts 225

Fall Time tf IB2 = 15mA, VCC = 30V - 60

*Pulse Condition: Pulse Width ≤300µs, Duty Cycle ≤2%.

Part Number Table

Package Part Number

TO-18 2N2222
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2N2222
Low Power Bipolar Transistors
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