IRF840
IRF840
IRF840
DESCRIPTION TO-220
The PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Tl Maximum Lead Temperature For Soldering Purpose 300 °C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive 8 A
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy 520 mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2 3 4 V
RDS(on) Static Drain-source On VGS = 10V, ID = 3.5 A 0.75 0.85 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (1) Forward Transconductance VDS > ID(on) x RDS(on)max, 6.4 S
ID = 3.5A
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 832 pF
Coss Output Capacitance 131 pF
Crss Reverse Transfer 17 pF
Capacitance
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SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 250 V, ID = 3.5 A 10 ns
tr Rise Time RG = 4.7Ω VGS = 10 V 21 ns
(see test circuit, Figure 3)
Qg Total Gate Charge VDD = 400V, ID = 7 A, 29.6 39 nC
Qgs VGS = 10V
Gate-Source Charge 4.9 nC
Qgd Gate-Drain Charge 13.9 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 7 A, 9 ns
RG = 4.7Ω, VGS = 10V
tf Fall Time 9 ns
(see test circuit, Figure 5)
tc Cross-over Time 19 ns
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Output Characteristics Transfer Characteristics
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For Fig. 4: Gate Charge test Circuit
Resistive Load
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IRF840
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.15 1.70 0.045 0.066
c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
øP 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
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mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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