Temp Control Heater

US011158526B2
( 12) United States Patent ( 10) Patent No .: US 11,158,526 B2

Parkhe et al . (45 ) Date of Patent : Oct. 26 , 2021
( 54 ) TEMPERATURE CONTROLLED ( 56 ) References Cited
SUBSTRATE SUPPORT ASSEMBLY
U.S. PATENT DOCUMENTS
( 71 ) Applicant: Applied Materials , Inc. , Santa Clara , 4,614,873 A * 9/1986 Umeji HO2M 1/092
CA (US) 250 / 227.11
6,072,162 A * 6/2000 Ito HOTL 21/67103
(72) Inventors : Vijay D. Parkhe , San Jose , CA (US ) ; 118/715
Konstantin Makhratchev , Fremont, 6,133,557 A * 10/2000 Kawanabe HO1L 21/67103
CA (US ); Masanori Ono , Chiba (JP ) ; 219/544
Zhiqiang Guo , Sunnyvale, CA (US ) ( Continued )
( 73 ) Assignee : Applied Materials , Inc. , Santa Clara , FOREIGN PATENT DOCUMENTS
CA (US )
CN 102668058 A 9/2012
( * ) Notice : Subject to any disclaimer, the term of this JP 11354528 A * 12/1999 HO1L 21/324
patent is extended or adjusted under 35 ( Continued )
U.S.C. 154 (b ) by 0 days.
OTHER PUBLICATIONS
( 21 ) Appl. No .: 14 /285,606
International Search Report and Written Opinion for PCT /US2015 /
( 22 ) Filed : May 22, 2014 029725 dated Aug. 19 , 2015 .
( Continued )
( 65 ) Prior Publication Data
US 2015/0228513 A1 Aug. 13 , 2015 Primary Examiner Erin E McGrath
(74 ) Attorney, Agent, or Firm - Patterson + Sheridan,
LLP
Related U.S. Application Data
( 60 ) Provisional application No. 61 / 937,348 , filed on Feb. ( 57 ) ABSTRACT
7 , 2014 . Implementations described herein provide a substrate sup
( 51 ) Int . Cl . port assembly which enables both lateral and azimuthal
HOIL 21/67 (2006.01 ) tuning of the heat transfer between an electrostatic chuck
HOIL 21/683 ( 2006.01 ) and a heater assembly. The substrate support assembly
comprises an upper surface and a lower surface; one or more
( 52 ) U.S. Cl . main resistive heaters disposed in the substrate support; and
CPC HOIL 21/67103 (2013.01 ) ; HOIL 21/67248 a plurality of heaters in column with the main resistive
(2013.01 ) ; HOIL 21/6831 (2013.01 ) heaters and disposed in the substrate support. A quantity of
( 58 ) Field of Classification Search the heaters is an order of magnitude greater than a quantity
CPC HO1L 21/6831 ; HO1L 21/67103 ; HOIL of the main resistive heaters and the heaters are indepen
21/67248 ; H05B 3/283 dently controllable relative to each other as well as the main
USPC 219/ 444.1 ; 29/611 , 612 , 620 ; 438/710 , resistive heater.
438/798 , 799
See application file for complete search history . 16 Claims , 9 Drawing Sheets
308
576 304
374 140
126
322
360
72 140
306
200
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340
326
362
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364
216
340
US 11,158,526 B2
Page 2
( 56 ) References Cited 2014/0096909 A1 4/2014 Singh et al.

2014/0154819 Al 6/2014 Gaff et al .
U.S. PATENT DOCUMENTS 2015/0129165 Al 5/2015 Parkhe et al .
2015/0155193 A1 6/2015 Hsu et al.
6,190,040 B1 * 2/2001 Renken GO1K 1/026 2015/0170977 A1 6/2015 Singh
374/133 2015/0187625 A1 7/2015 Busche et al .
6,490,146 B2 12/2002 Wang et al . 2015/0187626 A1 7/2015 Parkhe et al .
6,538,872 B1 3/2003 Wang et al . 2015/0228513 Al 8/2015 Parkhe et al .
6,653,603 B2 11/2003 Yamaguchi 2015/0311105 Al 10/2015 Sadjadi et al .
6,740,853 B1 5/2004 Johnson et al . 2015/0364354 A1 12/2015 Tantiwong et al .
6,921,724 B2 * 7/2005 Kamp HO1L 21/31116 2015/0366004 Al 12/2015 Nangoy et al .
156/ 345.52 2016/0027678 A1 1/2016 Parkhe et al .
6,956,186 B1 * 10/2005 Ito GO5D 23/1917
118/724 FOREIGN PATENT DOCUMENTS
8,226,769 B2 7/2012 Matyushkin et al .
8,461,674 B2 6/2013 Gaff et al . JP 2013508968 A 3/2013
8,546,732 B2 10/2013 Singh WO 2013033381 A2 3/2013
8,587,113 B2 11/2013 Gaff et al . WO 2013033394 A2 3/2013
8,624,168 B2 1/2014 Gaff et al .
8,637,794 B2 1/2014 Singh et al . OTHER PUBLICATIONS
8,642,480 B2 2/2014 Gaff et al .
8,663,391 B2 3/2014 Matyushkin et al . International Search Report for PCT/US2015 /010468 dated Apr. 28 ,
8,884,194 B2 11/2014 Singh et al .
8,937,800 B2 1/2015 Lubomirsky et al . 2015 , 13 pgs .
9,196,514 B2 11/2015 Parkhe et al. International Search Report and Written Opinion for PCT US2014
/ /
2005/0217799 A1 10/2005 O'Meara et al . 064735 dated Feb. 24 , 2015 , 15 pgs .
2006/0151465 A1 7/2006 Lin et al . Office Action from Chinese Patent Application No. 201580001498.6
2008/0017104 Al 1/2008 Matyushkin et al . dated Aug. 1 , 2018 .
2009/0274590 A1 11/2009 Willwerth et al .
2010/0163188 Al 7/2010 Tanaka et al . Office Action from Taiwan Patent Application No. 104103592 dated
2011/0090719 Al 4/2011 Benjamin Jul. 23 , 2018 .
2011/0092072 A1 * 4/2011 Singh C23C 14/541 Office Action from Japanese Patent Application No. 2016-568792
438/710 dated Nov. 14 , 2018 .
2011/0147363 A1 6/2011 Yap et al . Office Action for Japanese Patent Application No. 2016-568792
2011/0272393 A1 * 11/2011 Donarski F24C 7/08 dated Oct. 16 , 2019 .
219 /443.1 Office Action from Chinese Patent Application No. 201580001498.6
2012/0285619 Al 11/2012 Malyushkin et al . dated Apr. 2 , 2020 .
2013/0068750 A1 3/2013 Gaff et al . Office Action from Chinese Patent Application No. 201580001498.6
2013/0072035 A1 3/2013 Gaff et al . dated Feb. 9 , 2021 .
2013/0161305 Al 6/2013 Ptasienski et al . Office Action from JP 2020-091016 dated Jun . 15 , 2021 .
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2014/0004702 A1 1/2014 Singh 7002581 dated Feb. 1 , 2021 .
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2014/0045337 Al 2/2014 Singh et al . dated Feb. 9 , 2021 .
2014/0047705 Al 2/2014 Singh et al .
2014/0048529 Al 2/2014 Pease * cited by examiner
U.S. Patent Oct. 26 , 2021
9 Sheet 1 of 9 US 11,158,526 B2
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CONTROLLER
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FIG . 1
U.S. Patent Oct. 26 , 2021 Sheet 2 of 9 US 11,158,526 B2
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APPLYING POWER TO A MAIN RESISTIVE HEATER
FORMED IN A SUBSTRATE SUPPORT ASSEMBLY
504
PROVIDING POWER TO A PLURALITY OF
HEATERS DISTRIBUTED LATERALLY WITHIN THE
SUBSTRATE SUPPORT ASSEMBLY
506
PROCESSING A WORKPIECE , SUCH AS A
SUBSTRATE , ON THE SUBSTRATE
SUPPORT ASSEMBLY
508
OPTIONALLY , CHANGING POWER PROVIDED TO
THE PLURALITY OF HEATERS DISTRIBUTED
LATERALLY WITHIN THE SUBSTRATE SUPPORT
ASSEMBLY IN RESPONSE TO PROCESS
CONDITIONS OR CHANGE IN A PROCESS RECIPE
FIG . 5
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US 11,158,526 B2
1 2
TEMPERATURE CONTROLLED of the main resistive heaters and the heaters are indepen
SUBSTRATE SUPPORT ASSEMBLY dently controllable relative to each other as well as the main
resistive heater.
CROSS - REFERENCE TO RELATED In one embodiment, a substrate support assembly com
APPLICATIONS 5 prises a substrate support having a substrate support surface
and a lower surface; a plurality of resistive heaters coupled
This application claims benefit of U.S. Provisional Appli- to or disposed in the substrate support, the plurality of
cation Ser. No. 61 / 937,348 , filed Feb. 7 , 2014 , of which is resistive heaters independently controllable relative to each
incorporated by reference in its entirety. 10
other; and a heater controller coupled to the plurality of
resistive heaters, wherein the heater controller includes an
BACKGROUND optics and heater controller.
In yet another embodiment, a processing chamber com
Field prises a chamber body and a substrate support assembly. The
15 substrate support assembly comprises an upper surface and
Implementations described herein generally relate to a lower surface; one or more main resistive heaters disposed
semiconductor manufacturing and more particularly to tem- in the substrate support; and a plurality of heaters in column
perature controlled substrate support assembly and method with the main resistive heaters and disposed in the substrate
of using the same . support. A quantity of the heaters is an order of magnitude
20 greater than a quantity of the main resistive heaters and the
Description of the Related Art heaters are independently controllable relative to each other
as well as the main resistive heater.
As the feature size of the device patterns get smaller, the
critical dimension (CD ) requirements of these features BRIEF DESCRIPTION OF THE DRAWINGS
become a more important criterion for stable and repeatable 25
device performance. Allowable CD variation across a sub- So that the manner in which the above recited features of
strate processed within a processing chamber is difficult to the present invention can be understood in detail , a more
achieve due to chamber asymmetries such as chamber and particular description of the invention, briefly summarized
substrate temperature , flow conductance, and RF fields. above , may be had by reference to implementations, some of
In processes utilizing an electrostatic chuck , uniformity of 30 which are illustrated in the appended drawings. It is to be
temperature control across the surface of the substrate is noted , however, that the appended drawings illustrate only
even more challenging due to the non -homogeneous con- typical implementations of this invention and are therefore
struction of the chuck below the substrate . For example, not to be considered limiting of its scope , for the invention
some regions of the electrostatic chuck have gas holes , while may admit to other equally effective implementations.
other regions have lift pin holes that are laterally offset from 35 FIG . 1 is a cross - sectional schematic side view of a
the gas holes. Still other regions have chucking electrodes , processing chamber having one embodiment of a? substrate
while other regions have heater electrodes that are laterally support assembly ;
offset from the chucking electrodes. Since the structure of FIG . 2 is a partial cross - sectional schematic side view
the electrostatic chuck can vary both laterally and azimuth- detailing portions of the substrate support assembly ;
ally, uniformity of heat transfer between the chuck and 40 FIG . 3A is a cross - sectional view taken along a section
substrate is complicated and very difficult to obtain , result- line A - A of FIG . 2 ;
ing in local hot and cold spots across the chuck surface, FIGS . 3B - 3D are cross - sectional views taken along the
which consequently result in non - uniformity of processing section line A - A of FIG . 2 , illustrating alternative layouts for
results along the surface of the substrate . heaters ;
The lateral and azimuthal uniformity of heat transfer 45 FIG . 4A - 4E are partial schematic side views of illustrat
between the chuck and substrate is further complicated by ing various locations for heaters and main resistive heaters
heat transfer schemes commonly utilized in conventional within a substrate support;
substrate supports to which the electrostatic chuck is FIG . 5 is a flow diagram of one embodiment of a method
mounted . For example, conventional substrate supports typi- for processing a substrate utilizing a substrate support
cally have only edge to center temperature control. Thus, 50 assembly;
local hot and cold spots within the electrostatic chuck cannot FIG . 6 is a simplified wiring schematic for operating
be compensated for while utilizing the heat transfer features heaters ;
of the conventional substrate supports. FIG . 7 is a graphical depiction for wiring of the main
Thus, there is a need for an improved substrate support resistive heaters with a hardware key ;
assembly. 55 FIG . 8 is a top plan view of a facility plate , configured to
use the hardware keys;
SUMMARY FIG . 9 is a graphical depiction for an alternate wiring
schema for the main resistive heaters without the hardware
Implementations described herein provide a substrate key; and
support assembly which enables both lateral and azimuthal 60 FIG . 10 is a top plan view of a cooling base , configured
tuning of the heat transfer between an electrostatic chuck for the wiring schema depicted in FIG . 9 .
and a heater assembly. The substrate support assembly To facilitate understanding, identical reference numerals
comprises an upper surface and a lower surface; one or more have been used, where possible , to designate identical
main resistive heaters disposed in the substrate support; and elements that are common to the figures. It is contemplated
a plurality of heaters in column with the main resistive 65 that elements disclosed in one implementation may be
heaters and disposed in the substrate support. A quantity of beneficially used in other implementations without specific
the heaters is an order of magnitude greater than a quantity recitation .
US 11,158,526 B2
3 4
DETAILED DESCRIPTION process gas provided by the gas panel 112 are energized
within the internal volume 124 to form a plasma 122 utilized
Implementations described herein provide a substrate to process the substrate 134 disposed on the substrate
support assembly which enables both lateral and azimuthal support assembly 126. The process gases may be energized
tuning of the temperature of an electrostatic chuck compris- 5 by RF power inductively coupled to the process gases from
ing the substrate support assembly, which in turn , allows a plasma applicator 120 positioned outside the chamber
both lateral and azimuthal tuning of the lateral temperature body 102. In the embodiment depicted in FIG . 1 , the plasma
profile of a substrate processed on the substrate support applicator 120 is a pair of coaxial coils coupled through a
assembly. Moreover, the substrate support assembly also matching circuit 118 to an RF power source 116 .
enables local hot or cold spots on the substrate to be 10 A controller 148 is coupled to the processing chamber 100
substantially eliminated . Methods for tuning of a lateral to control operation of the processing chamber 100 and
temperature profile a substrate processed on a substrate processing of the substrate 134. The controller 148 may be
support assembly are also described herein . Although the one of any form of general -purpose data processing system
substrate support assembly is described below in an etch that can be used in an industrial setting for controlling the
processing chamber, the substrate support assembly may be 15 various subprocessors and subcontrollers. Generally, the
utilized in other types of plasma processing chambers, such controller 148 includes a central processing unit ( CPU ) 172
as physical vapor deposition chambers, chemical vapor in communication with memory 174 and input / output ( I/ O )
deposition chambers , ion implantation chambers, among circuitry 176 , among other common components. Software
others , and other systems where azimuthal tuning of a lateral commands executed by the CPU of the controller 148 , cause
temperature profile is desirable. It is also contemplated that 20 the processing chamber to , for example, introduce an etchant
the heaters may also be utilized to control the temperature of gas mixture ( i.e. , processing gas ) into the internal volume
other surfaces, including those not used for semiconductor 124 , form the plasma 122 from the processing gas by
processing application of RF power from the plasma applicator 120 , and
In one or more embodiments, the substrate support assem- etch a layer of material on the substrate 134 .
bly allows for the correction of critical dimension ( CD ) 25 The substrate support assembly 126 generally includes at
variation at the edge of the substrate during vacuum process , least aa substrate support 132. The substrate support 132 may
such as etching , deposition , implantation and the like , by be a vacuum chuck , an electrostatic chuck , a susceptor, or
allowing the substrate temperature to be utilized to compen- other workpiece support surface . In the embodiment of FIG .
sate for chamber non - uniformities, such as temperature, flow
1 , the substrate support 132 is an electrostatic chuck and will
conductance , electrical fields, plasma density and the like.
30 be described hereinafter as the electrostatic chuck 132. The
Additionally, some embodiments have demonstrated the substrate support assembly 126 may additionally include a
ability to control the temperature uniformity across the heater assembly 170. The substrate support assembly 126
substrate to less than about +0.3 degrees Celsius . may also include a cooling base 130. The cooling base may
FIG . 1 is a cross - sectional schematic view of an exem-alternately be separate from the substrate support assembly
plary etch processing chamber 100 having a substrate sup-35 126. The substrate support assembly 126 may be removably
port assembly 126. As discussed above, the substrate supportcoupled to a support pedestal 125. The support pedestal 125 ,
assembly 126 may be utilized in other processing chamber, which may include a pedestal base 128 and a facility plate
for example plasma treatment chambers, annealing cham- 180 , is mounted to the chamber body 102. The substrate
bers, physical vapor deposition chambers, chemical vapor support assembly 126 may be periodically removed from the
deposition chambers, and ion implantation chambers, 40 support pedestal 125 to allow for refurbishment of one or
among others, as well as other systems where the ability to more components of the substrate support assembly 126 .
control a temperature profile of a surface or workpiece, such The facility plate 180 is configured to accommodate a
as a substrate, is desirable. Independent and local control of
plurality of driving mechanism configured to raise and lower
the temperature across many discrete regions across a sur- a plurality of lifting pins . Additionally, the facility plate 180
face beneficially enables azimuthal tuning of the tempera-
45 is configured to accommodate the plurality of fluid connec
ture profile, center to edge tuning of the temperature profile ,
tions from the electrostatic chuck 132 and the cooling base
and reduction of local temperature asperities, such as hot and
130. The facility plate 180 is also configured to accommo
cool spots . date the plurality of electrical connections from the electro
The processing chamber 100 includes a grounded cham- static chuck 132 and the heater assembly 170. The myriad of
ber body 102. The chamber body 102 includes walls 104 , a50 connections may run externally or internally of the substrate
bottom 106 and a lid 108 which enclose an internal volume support assembly 126 while the facility plate 180 provides
124. The substrate support assembly 126 is disposed in the an interface for the connections to a respective terminus.
internal volume 124 and supports a substrate 134 thereon The electrostatic chuck 132 has a mounting surface 131
during processing. and a workpiece surface 133 opposite the mounting surface
The walls 104 of the processing chamber 100 include an 55 131. The electrostatic chuck 132 generally includes aa chuck
opening ( not shown) through which the substrate 134 may ing electrode 136 embedded in a dielectric body 150. The
be robotically transferred into and out of the internal volume
chucking electrode 136 may be configured as a mono polar
124. A pumping port 110 is formed in one of the walls 104 or bipolar electrode, or other suitable arrangement. The
or the bottom 106 of the chamber body 102 and is fluidly chucking electrode 136 is coupled through an RF filter 182
connected to a pumping system ( not shown) . The pumping 60 to a chucking power source 138 which provides a RF or DC
system is utilized to maintain a vacuum environment within power to electrostatically secure the substrate 134 to the
the internal volume 124 of the processing chamber 100, upper surface of the dielectric body 150. The RF filter 182
while removing processing byproducts. prevents RF power utilized to form a plasma 122 within the
A gas panel 112 provides process and / or other gases to the processing chamber 100 from damaging electrical equip
internal volume 124 of the processing chamber 100 through 65 ment or presenting an electrical hazard outside the chamber.
one or more inlet ports 114 formed through at least one of The dielectric body 150 may be fabricated from a ceramic
the lid 108 or walls 104 of the chamber body 102. The material, such as AlN or A1,03. Alternately, the dielectric
US 11,158,526 B2
5 6
body 150 may be fabricated from a polymer, such as power source 178 may couple the controller 202 to the
polyimide, polyetheretherketone, polyaryletherketone and controller 148 to decouple the controller 148 from influence
the like . of the RF energy with the processing chamber 100 .
The workpiece surface 133 of the electrostatic chuck 132 Alternately, the one or more main resistive heaters 154 ,
may include gas passages (not shown) for providing back- 5 and / or the heaters 140 , may be formed in the electrostatic
side heat transfer gas to the interstitial space defined chuck 132. In an embodiment where both the main resistive
between the substrate 134 and the workpiece surface 133 of heaters 154 and the heaters 140 are formed in the electro
the electrostatic chuck 132. The electrostatic chuck 132 may static chuck 132 , the substrate support assembly 126 may be
also include lift pin holes for accommodating lift pins ( both formed without the heater assembly 170 and the electrostatic
not shown ) for elevating the substrate 134 above the work- 10 chuck 132 may be disposed directly on the cooling base 130 .
piece surface 133 of the electrostatic chuck 132 to facilitate The electrostatic chuck 132 may include one or more
robotic transfer into and out of the processing chamber 100 . thermocouples ( not shown ) for providing temperature feed
The temperature controlled cooling base 130 is coupled to back information to the controller 148 for controlling the
a heat transfer fluid source 144. The heat transfer fluid power applied by the main heater power source 156 to the
source 144 provides a heat transfer fluid , such as a liquid, 15 main resistive heaters 154 , for controlling the operations of
gas or combination thereof, which is circulated through one the cooling base 130, and controlling the power applied by
or more conduits 160 disposed in the base 130. The fluid the heater power source 142 to the heaters 140 .
flowing through neighboring conduits 160 may be isolated The temperature of the surface for the substrate 134 in the
to enable local control of the heat transfer between the processing chamber 100 may be influenced by the evacua
electrostatic chuck 132 and different regions of the cooling 20 tion of the process gasses by the pump, the slit valve door,
base 130 , which assists in controlling the lateral temperature the plasma 122 and other factors . The cooling base 130 , the
profile of the substrate 134 . one or more main resistive heaters 154 , and the heaters 140
A fluid distributor may be fluidly coupled between an all help to control the surface temperature of the substrate
outlet of the heat transfer fluid source 144 and the tempera- 134 .
ture controlled cooling base 130. The fluid distributor oper- 25 In a two zone configuration of main resistive heaters 154 ,
ates to control the amount of heat transfer fluid provided to the main resistive heaters 154 may be used to heat the
the conduits 160. The fluid distributor may be disposed substrate 134 to a temperature suitable for processing with
outside of the processing chamber 100 , within the substrate a variation of about +/– 10 degrees Celsius from one zone to
support assembly 126 , within the pedestal base 128 or other another. In a four zone assembly for the main resistive
suitable location . 30 heaters 154 , the main resistive heaters 154 may be used to
The heater assembly 170 may include one or more main heat the substrate 134 to a temperature suitable for process
resistive heaters 154 and / or a plurality of heaters 140 ing with a variation of about +/- 1.5 degrees Celsius within
embedded in a body 152. The main resistive heaters 154 may a particular zone . Each zone may vary from adjacent zones
be provided to elevate the temperature of the substrate from about 0 degrees Celsius to about 20 degrees Celsius
support assembly 126 to a temperature for conducting 35 depending on process conditions and parameters. However,
chamber processes . The heaters 140 provide localized the requirement for minimizing variations in the critical
adjustments to the temperature profile of the substrate sup- dimensions across a substrate has reduced the acceptable
port assembly 126 generated by the main resistive heaters variation in a determined process temperature of the surface
154. Thus, the main resistive heaters 154 operate on a of the substrate surface . A half a degree variation of the
globalized macro scale while the heaters operate on a 40 surface temperature for the substrate 134 may result in as
localized micro scale . The main resistive heaters 154 are much as a nanometer difference in the formation of struc
coupled through an RF filter 184 to a main heater power tures therein . The heaters 140 improve the temperature
source 156. The power source 156 may provide 500 watts or profile of the surface of the substrate 134 produced by the
more power to the main resistive heaters 154. The controller main resistive heaters 154 by reducing variations in the
148 may control the operation of the main heater power 45 temperature profile to about +/- 0.3 degrees Celsius . The
source 156 , which is generally set to heat the substrate 134 temperature profile may be made uniform or to precisely
to about predefined temperature . In one embodiment, the vary in a predetermined manner across regions of the
main resistive heaters 154 include a plurality of laterally substrate 134 through the use of the heaters 140 to enable
separated heating zones , wherein the controller 148 enables realization of desired results .
one zone of the main resistive heaters 154 to be preferen- 50 FIG . 2 is a partial cross - sectional schematic view illus
tially heated relative to the main resistive heaters 154 trating portions of the substrate support assembly 126 .
located in one or more of the other zones . For example, the Included in FIG . 2 are portions of the electrostatic chuck
main resistive heaters 154 may be arranged concentrically in 132 , the heater assembly 170 and the facility plate 180 .
a plurality of separated heating zones . The body 152 of the heater assembly 170 may be fabri
The heaters 140 are coupled through an RF filter 186 to 55 cated from a polymer such as a polyimide . The body 152
a heater power source 142. The heater power source 142 may generally be cylindrical in plan form , but may also be
may provide 10 watts or less power to the heaters 140. In one formed in other geometrical shapes. The body 152 has an
embodiment, the power supplied by the heater power source upper surface 270 and a lower surface 272. The upper
142 is an order of magnitude less than the power supplied by surface 270 faces the electrostatic chuck 132 , while the
the power source 156 of the main resistive heaters . The 60 lower surface 272 faces the cooling base 130 .
heaters 140 may additionally be coupled to a controller 202 . The body 152 of the heater assembly 170 may be formed
The controller 202 may be located within or external to the from two or more dielectric layers (shown in FIG . 2 as three
substrate support assembly 126. The controller 202 may dielectric layers 260 , 262 , 264 ) and heating the layers 260 ,
manage the power provided from heater power source 142 262 , 264 under pressure to form a single body 152. For
to individual or groups of heaters 140 in order to control the 65 example, the body 152 may be formed from polyimide
heat generated locally at each heaters 140 distributed later- layers 260 , 262 , 264 , which separate the main resistive
ally across the substrate support assembly 126. An optical heaters and heaters 154 , 140 , which are heated under pres
US 11,158,526 B2
7 8
sure to form the single body 152 of the heater assembly 170 . the electrostatic chuck 132 , or the heaters may be deposited
The heaters 140 may be placed in , on or between the first, by other means . For example, the heaters 140 can be
second or third layers 260 , 262 , 264 prior to forming the
2 deposited on the mounting surface 131 by physical vapor
body 152. Additionally, the main resistive heaters 154 may deposition, chemical vapor deposition, screen printing or
be placed in, on or between on the first, second or third 5 other suitable methods. The main resistive heaters 154 can
layers 260 , 262 , 264 prior to assembly, with at least one of be in the electrostatic chuck 132 or heater assembly 170 as
the layers 260 , 262 , 264 separating and electrically insulat- shown above .
ing the heaters 154 , 140. In this manner, the heaters 140 and The main resistive heaters 154 may be formed or disposed
the main resistive heaters 154 become an integral part of the on or in the body 152 of the heater assembly 170 or
heater assembly 170 . 10 electrostatic chuck 132. The main resistive heaters 154 may
Alternate configurations for locations of the main resistive be formed by plating, ink jet printing, screen printing,
heaters 154 and the heaters 140 may place one or both physical vapor deposition , stamping, wire mesh or other
heaters 154 , 140 in or under the electrostatic chuck 132 . suitable manner. In this manner fabrication of the substrate
FIGS . 4A - 4E are partial schematic views of the substrate support assembly 126 is simplified . In one embodiment,
support assembly 126 detailing various locations for the 15 main resistive heaters 154 are disposed within the heater
heaters 140 and the main resistive heaters 154 , although not assembly 170 while forming the heater assembly 170. In
limiting to all embodiments. another embodiment, main resistive heaters 154 are directly
In the embodiment depicted in FIG . 4A , the substrate disposed on the mounting surface 131 of the electrostatic
support assembly 126 does not have aa heater assembly ( 170 ) chuck 132. For example, main resistive heaters 154 may be
and the heaters 140 and the main resistive heaters 154 are 20 in a sheet form which can be adhered to the mounting
disposed in the electrostatic chuck 132 , for example , below surface 131 of the electrostatic chuck 132 , or main resistive
the chucking electrode 136. Although the heaters 140 are heaters 154 may be deposited by other means. For example,
shown below the main resistive heaters 154 , the heaters 140 main resistive heaters 154 can be deposited on the mounting
may be alternatively positioned above the main resistive surface 131 by physical vapor deposition , chemical vapor
heaters 154. In the embodiment depicted in FIG . 4B , the 25 deposition , screen printing or other suitable methods. The
heater assembly 170 for the substrate support assembly 126 heaters 140 can be in the electrostatic chuck 132 or heater as
includes the heaters 140 while the main resistive heaters 154 shown above .
are disposed in the electrostatic chuck 132 , for example, In some embodiments, the main resistive heaters 154 may
below the chucking electrode 136. Alternatively , the heaters be fabricated similar to the heaters 140 , and in such embodi
140 may be disposed in the electrostatic chuck 132 while the 30 ments, may optionally be utilized without benefit of addi
main resistive heaters 154 are disposed in the heater assem- tional heaters 140. In other words, the main resistive heaters
bly 170. In the embodiment depicted in FIG . 4C , the heater 154 of the substrate support assembly 126 are, that is ,
assembly 170 for the substrate support assembly 126 has the segmented in to a plurality of discrete resistive heating
main resistive heaters 154 disposed therein . The heaters 140 elements. Segmenting the main resistive heaters 154 in the
are disposed in the electrostatic chuck 132 , for example , 35 form of small resistive heaters allows focal control of hot
below the chucking electrode 136. In the embodiment and cold spots on the surface of the substrate 134. An
depicted in FIG . 4D , the heater assembly 170 for the additional layer of heaters 140 is optional , depending on the
substrate support assembly 126 has heaters 140 disposed desired level of temperature control.
therein while the main resistive heaters 154 are disposed on FIG . 7 is a graphical depiction for a wiring layout for a
one of the heater assembly 170 or the electrostatic chuck 40 segmented main resistive heaters 154 formed from plu
132. The heater assembly 170 isolates the heaters 140 from rality of unit heaters 846. The unit heaters 846 may be
the cooling base 130. In the embodiment depicted in FIG . controlled through use of the controller 202 as described
4E , the heater assembly 170 of the substrate support assem- above , or through the use of a heater controller in the form
bly 126 has main resistive heaters 154 disposed therein . The of aa hardware wiring key 802 as depicted in FIG . 7. One
heaters 140 are disposed in or on the heater assembly 170 , 45 implementation for using hardware wiring keys 802 is
for example , below the electrostatic chuck 132. It is con- illustrated in a top plan view of the facility plate 180 shown
templated that the heaters 140 and the main resistive heaters in FIG . 8 .
154 may be arranged in other orientations. For example, the Referring jointly to FIGS . 7 and 8 , the substrate support
9
substrate support assembly 126 may only have the plurality assembly 126 may have one or more main resistive heater
of heaters 140 for heating the substrate 134. In one embodi- 50 154 , illustratively shown as four main resistive heaters 154 ,
ment, the heaters 140 and the main resistive heaters 154 are each defining one of four zones 810 , 820 , 830 , 840. The
disposed directly under each other within substrate support temperature in each zone 810 , 820 , 830 , 840 may be
assembly 126. The heaters 140 provide fine tune control for independently controlled by the main resistive heater 154
the temperature profile of the substrate 134 supported by the associated with zone . Additionally, each main resistive heat
substrate support assembly 126 . 55 ers 154 is comprised of a plurality of separated unit heaters
The heaters 140 may be formed or disposed on or in the 846. The unit heaters 846 may be either active ( active unit
body 152 of the heater assembly 170 or electrostatic chuck heaters 842 ) or inactive ( inactive unit heaters 844 ) . Active
132. The heaters 140 may be formed by plating , ink jet unit heaters 842 are coupled to a power source and contrib
printing, screen printing, physical vapor deposition, stamp- ute heat to the main resistive heaters 154. The inactive unit
ing , wire mesh or other suitable manner . In this manner 60 heaters 844 are a power source and thus, do not contribute
fabrication of the substrate support assembly 126 is simpli- heat to the main resistive heaters 154. Thus, by selectively
fied. In one embodiment, the heaters 140 are disposed within choosing which main resistive heaters 154 are active unit
the heater assembly 170 while forming the heater assembly heaters 842 or inactive unit heaters 844 , the temperature
170. In another embodiment, the heaters 140 are directly profile of the substrate support assembly 126 may be con
disposed on the mounting surface 131 of the electrostatic 65 trolled , for example, to control local hot or cold spots , to
chuck 132. For example , the heaters 140 may be in a sheet provide center to edge tuning of the temperature profile, and
form which can be adhered to the mounting surface 131 of to provide azimuthal tuning of the lateral temperature profile
US 11,158,526 B2
9 10
of the substrate support assembly 126 , and consequently, the connections 860. The negative terminal may have a gate
substrate 134 processed thereon . switch or other means for selectively interrupting the flow of
The unit heaters 846 for each main resistive heater 154 current across the terminal.
may be selected to form a pattern of active heater density The hardware wiring key 802 may be formed in a manner
within each of the zones 810 , 820 , 830 , 840. The pattern of 5 to preselect only those circuits which are desired to make
the unit heaters 846 may be tightly packed and uniform , active and available to deliver power to the unit heaters 846 .
similar to the pattern of unit heaters labeled 854. Alternately, The inactive circuits may have gaps or gates 864 , unformed
circuitry within the hardware wiring key 802 , or an insulat
the pattern for the unit heaters 846 may be loosely spaced . ing cap (not shown ), among other suitable means for inter
The unit heaters 846 may be switched between active unit
heaters 842 and inactive unit heaters 844 using hardware, 10 therupting
unit the flow 846
heaters of power
withintothethemain
wiredresistive
connections
heaters860154of.
such as the hardware wiring key 802 , the controller 202 , Thus, one hardware wiring key 802 may be utilized to
software or firmware executed by controller 148 , or through provide a predefined lateral temperature distribution of the
another method or device . Thus, the temperature profile
generated from the main resistive heaters 154 in each of the 15 substrate
hardware
while performing one process, and replaced by a
wiring key 802 having a different preselection of
zones 810 , 820 , 830 , 840 may be refined by selectively circuits which are desired to make active are available to
activating the unit heaters 846
the main resistive heaters 154 .
to control the heat supplied by deliver power to the unit heaters 846 which will yield a
different predefined lateral temperature distribution of the
Each unit heater 846 , that is all active unit heaters 842 and substrate while performing another process. In this manner,
all inactive unit heaters 844 , has a wired connection 860. 20 different hardware wiring keys 802 may be efficiently
The wired connections 860 are routed to a receptacle 804 , swapped out to provide different temperature profiles, and
for example, formed in the facility plate 180. In one embodi- accordingly, greater flexibility in ensuring realization of
ment, the wired connections 860 may extend outward of the beneficial processing results .
substrate support assembly 126 and run down the outside of The wired connections 860 may be divided and equally
the substrate support assembly 126 to the receptacle 804 in 25 spaced about the outer surface 880 of the facility plate 180 .
the facility plate 180. Alternately, the wired connection 860 In one embodiment, the facility plate has four receptacles
may run internally through the heater assembly 170 , for 804 , each receptacle having a substantially equal number of
example, through a hole in the cooling base 130 to the wired connections 860. This arrangement allows the sub
receptacle 804 in facility plate 180 . strate support assembly 126 to be symmetrically balanced
The receptacle 804 in the facility plate 180 has an interior 30 and minimizes the effects of the wiring on processes occur
surface 805 and a side surface 806. The wired connections ring within the processing chamber 100. Advantageously,
860 may terminate at the interior surface 805 , thus forming the arrangement of unit heaters 846 and connections provide
a connector or socket . A control board connection 868 may a homogenous construction for the substrate support assem
terminate at the side surface 806 with a connector or socket . bly 126 , and promotes process symmetry.
The control board connection 868 may be a single power 35 The unit heaters 846 , of the main resistive heaters 154 ,
lead or a plurality of power leads . The wired connections allow the main resistive heaters 154 to have a temperature
860 and the control board connections 868 are part of a range between about ambient to about 500 degrees Celsius
circuit . Alternately, the wired connections 860 and the with the ability to control the lateral temperature profiled in
control board connections 868 may both residing on the increments of about 0.3 degrees Celsius . The substrate
same surface of the facility plate 180. For example , both the 40 support assembly 126 , having main resistive heaters 154
wired connections 860 and the control board connections configured with unit heaters 846 , has demonstrated the
2
868 may reside on an interior surface 805 of the receptacle ability to control the temperature uniformity of a substrate
804. A gap in the circuit is formed at the receptacle 804 such processed thereon to less than about 31.5 degrees Celsius .
that no current may flow across the circuit , i.e. from the Returning back to the embodiment depicted in FIG . 2 , the
control board connections 868 to the wired connections 860. 45 heater assembly 170 may be coupled to the mounting
The hardware wiring key 802 is configured to fit in the surface 131 of the electrostatic chuck 132 utilizing a bond
receptacle 804. The hardware wiring key 802 may be flush ing agent 244. The bonding agent 244 may be an adhesive,
with outer surface 880 of the facility plate 180 while a front such as an acrylic -based adhesive , an epoxy, a silicon based
surface 866 of the hardware wiring key 802 makes contact adhesive, a neoprene - based adhesive or other suitable adhe
with the interior surface 805 of the receptacle 804.Addi- 50 sive . In one embodiment, the bonding agent 244 is an epoxy.
tionally, the side surface 886 of the hardware wiring key 802 The bonding agent 244 may have a coefficient of thermal
is in contact the side surface 806 of the receptacle. The conductivity selected in a range from 0.01 to 200 W /mK
hardware wiring key 802 is configured to selectively fill the and, in one exemplary embodiment, in a range from 0.1 to
gap in the circuit at the receptacle 804 such that current may 10 W /mK . The adhesive materials comprising the bonding
flow from the control board connections 868 to selected 55 agent 244 may additionally include at least one thermally
wired connections 860. In this manner the electrical con- conductive ceramic filler, e.g. , aluminum oxide (Al2O3 ) ,
nections between the wired connections 860 and the control aluminum nitride (AIN) , and titanium diboride (TiB2 ) , and
board connections 868 can be made . Thus, the hardware the like .
wiring key 802 is configured to selectively provide power to In one embodiment, the heater assembly 170 is coupled to
the unit heaters 846 . 60 the cooling base 130 utilizing a bonding agent 242. The
The hardware wiring key 802 may use a common nega- bonding agent 242 may be similar to the bonding agent 244
tive terminal for each of the wired connections 860. For and may be an adhesive, such as an acrylic -based adhesive,
instance, all the negative terminals may utilize a common an epoxy , a neoprene - based adhesive or other suitable adhe
bus that may be formed in the jacket of the hardware wiring sive. In one embodiment, the bonding agent 242 is an epoxy .
key 802 or the negative terminal may be a shared pin 65 The bonding agent 242 may have a coefficient of thermal
connection. Alternately, the hardware wiring key 802 may conductivity selected in a range from 0.01 to 200 W /mK
use individual negative terminal for each of the wired and, in one exemplary embodiment, in a range from 0.1 to
US 11,158,526 B2
11 12
10 W /mK . The adhesive materials comprising the bonding group of cells 200 relative to the another group of cells 200 .
agent 242 may additionally include at least one thermally The controller 202 may toggle the on / off state or control the
conductive ceramic filler, e.g. , aluminum oxide ( Al2O3), duty cycle for individual or groups of the heaters 140 .
aluminum nitride (AIN) , and titanium diboride ( TiB2), and Alternately, the controller 202 may control the amount of
the like . 5 power delivered to the individual or groups of heaters 140 .
The bonding agents 244 , 242 may be removed when For example, the controller 202 may provide one or more
refurbishing one or more of the electrostatic chuck 132 , the heaters 140 ten watts of power , other heaters 140 nine watts
cooling base 130 and the heater assembly 170. In other of power, and still other heaters one watt of power.
embodiments , the heater assembly 170 is removably In one embodiment, each cell 200 may be thermally
coupled to the electrostatic chuck 132 and to the cooling 10 isolated from the neighboring cells 200 , for example, using
base 130 utilizing fasteners or clamps ( not shown ). a thermal choke 216 , which enables more precise tempera
The heater assembly 170 includes a plurality of heaters ture control. In another embodiment, each cell 200 may be
140 , illustratively shown as heaters 140a , 1400 , 140c . The thermally joined to an adjacent cell creating an analogue
heaters 140 are generally an enclosed volume within the (i.e. , smooth or blended ) temperature profile along an upper
heater assembly 170 in which a plurality of resistive heaters 15 surface 270 of the heater assembly 170. For example, a
effectuate heat transfer between the heater assembly 170 and metal layer, such as aluminum foil, may be used as a thermal
electrostatic chuck 132. Each heater 140 may be laterally spreader between the main resistive heaters 154 and the
arranged across the heater assembly 170 , and thus defined a heaters 140 .
cell 200 within the heater assembly 170 for locally providing The use of independently controllable the heaters 140 to
additional heat to region of the heater assembly 170 (and 20 smooth out or correct the temperature profile generated by
portion of the main resistive heater 154 ) aligned that cell the main resistive heaters 154 enable control of the local
200. The number of heaters 140 formed in the heater temperature uniformity across the substrate to very small
assembly 170 may vary , and it is contemplated that there is tolerances, thereby enabling precise process and CD control
at least an order of magnitude more heaters 140 (and cells when processing the substrate 134. Additionally, the small
200 ) greater than the number of the main resistive heaters 25 size and high density of the heaters 140 relative to the main
154. In one embodiment in which the heater assembly 170 resistive heaters 154 enables temperature control at specific
has four main resistive heaters 154 , there may be greater locations of the substrate support assembly 126 , substan
than 40 heaters 140. However, it is contemplated that there tially without affecting the temperature of neighboring areas ,
may be about 200 , about 400 or even more heaters 140 in a thereby allowing local hot and cool spots to be compensated
given embodiment of a substrate support assembly 126 30 for without introducing skewing or other temperature asym
configured for use with a 300 mm substrate . Exemplary metries . The substrate support assembly 126 , having a
distribution of the heaters 140 are described further below plurality of heaters 140 , has demonstrated the ability to
with reference to FIGS . 3A - 3D . control the temperature uniformity of a substrate 134 pro
The cells 200 may be formed through one or more layers cessed thereon to less than about +0.3 degrees Celsius .
260 , 262 , 264 comprising the body 152 of the heater 35 Another benefit of some embodiments of the substrate
assembly 170. In one embodiment, the cells are open to the support assembly 126 is the ability to prevent RF power
lower and upper surface 272 , 270 of the body 152. The cells from traveling through control circuitry. For example, the
may include sidewalls 214. The sidewalls 214 may be controller 202 may include an electrical power circuit 210
comprised of a material (or gap ) acting as a thermal choke and an optical control circuit 220. The electrical power
216. The thermal chokes 216 are formed in the upper surface 40 circuit 210 is coupled to the heaters 140. Each heater 140 has
270 of the body 152. The thermal chokes 216 separate and a pair of power leads ( connectors 250 ) which are connected
reduce conduction between adjacent cells 200. Thus , by to the electrical power circuit 210. In an exemplary heater
individually and independently controlling the power pro- assembly 170 having fifty heaters 140 , 50 pairs of power
vided to each heaters 140 , and consequently the heat transfer leads ( connectors 250 ) are needed for controlling the heaters
through cell 200 , a by approach to temperature control can 45 140. The RF energy supplied into the processing chamber
be realized which enables specific points of the substrate 134 100 for forming the plasma couples to the power leads .
to be heated or cooled, thereby enabling a truly addressable Filters , such as the RF filters 182 , 184 , 186 shown in FIG .
lateral temperature profile tuning and control of the surface 1 , are used to protect electrical equipment, such as the main
of the substrate 134 . heater power source 156 , from the RF energy. By terminat
An additional thermal choke 216 may be formed between 50 ing the power leads ( connectors 250 ) at the electrical power
the radially outermost cells 200 and a laterally outermost circuit 210 , and utilizing the optical control circuit 220 to
sidewall 280 of the body 152. This outermost thermal choke control how much power is provided to each heaters 140 ,
216 located between the cells 200 and the laterally outer- only the single RF filter 184 is needed between the electrical
most sidewall 280 of the body 152 minimizes heat transfer powercircuit 210 and the power source 156. In conventional
between the cells 200 , adjacent to the laterally outermost 55 applications , each heater requires a dedicated RF filter.
sidewall 280 , and the internal volume 124 of the processing Accordingly, as the space for dedicated RF filters very
chamber 100. Thereby allowing more precise temperature limited , the number of heaters utilized within the substrate
control closer to the edge of the substrate support assembly support assembly is also limited , thereby limiting the num
126 , and as a result, better temperature control to the outside ber of main heater zones which may be employed, and
diameter edge of the substrate 134 . 60 making corrective heaters impossible to implement. Thus,
As discussed above , each heater 140 may be indepen- the use of the electrical power circuit 210 with the optical
dently coupled a controller 202. The controller 202 may be control circuit 220 allow more heaters , and consequently,
disposed in the substrate support assembly 126. The con- superior lateral temperature control.
troller 202 may regulate the temperature of the heaters 140 Turning briefly to FIG . 6 , the simplified wiring schematic
in the heater assembly 170 at each cell 200 relative to the 65 for the heaters 140 illustrates the reduced number of RF
other cells 200 , or alternatively, regulate the temperature of filters needed to protect electrical chamber components from
a group of heaters 140 in the heater assembly 170 across a the RF signal. A flex circuit 600 may be utilized to assist
US 11,158,526 B2
13 14
controlling the plurality of heaters 140. The flex circuit 600 connectors 250 to connect the flex circuit 600 to the con
may form a matrix pattern with the heaters 140. The flex troller 202. The connectors 250 may extend internally
circuit 600 may consist of a number of non - intersecting through the substrate support assembly 126. For example,
positive leads 640 and negative leads 650 , each attached at the cooling base 130 and the facility plate 180 may have one
one end to the controller 202. Each positive lead 640 may 5 or more passages formed therethrough to accommodate the
have a plurality of heater assemblies 662 bridging a con- passage of the connectors 250. The connectors 250 may be
nection to a corresponding negative lead 650. Thus , the divided , positioned or distributed throughout the substrate
heater assembly 662 is deposed between each connection of support assembly 126 in such a manner that balances any
the positive and negative leads 640 , 650. In one exemplary effects of the wiring on the plasma processes ongoing in the
embodiment, the flex circuit 600 may have 9 positive leads 10 processing chamber 100. For example, four connectors 250
640 and 9 negative leads 650 and therefore as many as 81 may pass through four equally spaced passages formed
heater assemblies 662 . about a center of the substrate support assembly 126. In one
The heater assembly 662 has aa heater 663 and aa diode 664 embodiment, the flex circuit 600 may be printed on or within
connected in series . The heater 663 attaches to the positive the layers of the heater assembly 170 with a hundred or more
lead 640 and the diode 664 may attach to the negative lead 15 terminal leads for operating 50 or more heaters 140. In one
650. Alternately, heater 663 attaches to the negative lead 650 example, four hundred terminal leads are utilized to provide
and the diode 630 may attach to the positive lead 640. The power to two hundred heaters 140. The terminal leads may
diode 664 ensures current flows only in one direction . In one be divided into separate flexible strips, such as a ribbon
embodiment, the direction of the current flow for each of the cable or circuit , which may be run through slots formed in
heater assemblies 662 is from the positive lead 640 to the 20 the cooling base 130. The flexible strips containing the
negative lead 650 . terminal lead may be run through equally spaced slots
The controller 202 may open and / or close individual formed through the cooling base 130 to the facility plate 180
circuits to provide a predetermined current flow across a to provide symmetrical geometry which contributes to sym
selection of the positive leads 640 and the negative leads metrical temperature control and process uniformity .
650. For example , the controller 202 may provide for current 25 Returning back to FIG . 2 , the electrical power circuit 210
flow on positive lead labeled 641 and a return flow for the may switch or cycle power to the plurality of connectors 250
current on negative lead labeled 653 , with all other positive coming from the flex circuit 600. The electrical power
and negative leads 640 , 650 acting as open circuits . Alter- circuit 210 provides power to each of the connectors 250 to
nately, the controller 202 may selectively provide for current activate one or more heaters 140. Although the electrical
flow on positive leads labeled 642 and 643 while providing 30 power source ultimately supplies power to the plurality of
for a return flow on a negative lead 652 , with all other heaters 140 , the electrical power circuit 210 has a single
positive and negative leads 640 , 650 acting as open circuits . power source, i.e. the heater power source 142 , and thus only
The controller 202 may therefore selectively provide current requires only the single filter 184. Advantageously , the space
to the heater assemblies 662 disposed between the selected and expense for additional filters are mitigated , while
combinations of positive and negative leads 640 , 650. The 35 enabling use of many heaters and heater zones .
flex circuit 600 completes individual circuits with the fewest The optical control circuit 220 may be coupled to the
number of connections back to the controller 202 for sup- electrical power circuit 210 by an optical cable 226 , such as
2
plying power to each heater 663 . a fiber optic cable , to control the power supplied to the
In one embodiment, the controller 202 provides current connectors 250 and thus, the heaters 140. The optical control
on the positive lead labeled 641 and a return path for the 40 circuit 220 may be coupled to an optical power source 178
current is provided on all the negative leads 650. Heaters through an optical wave guide 228. The optical power
140 along the top row 612 are selectively turned on (active ) source 178 is coupled to the controller 148 for providing
while the remaining of the heaters 140 are inactive . In signals controlling the function of the heaters 140. The
another embodiment, the controller 202 provides current on optical cable 226 and optical wave guide 228 are not subject
the positive leads labeled 641 and 642 and provides a return 45 to electromagnetic interference or radio frequency (RF )
path for the current on the negative leads labeled 651 and energy . Thus, an RF filter to protect the optical power source
652. In this configuration , a small group of four heaters 691 , 178 from RF energy in the controller 202 is unnecessary ,
692 , 693 , 694 are selectively turned on while the remaining thereby allowing more space in the substrate support assem
heaters 140 remain inactive ( i.e. , unpowered ). Thus, the bly 126 for routing other utilities .
controller 202 may be utilized to selectively activate various 50 The optical control circuit 220 may send commands, or
heaters 140 by activating selected the positive leads 640 and instruction, to the electrical power circuit 210 for regulating
selected the negative leads 650. The controller 202 may also each heater 140 or groups/regions of heaters 140. As seen in
control the voltage across or current through a given heater the flex circuit 600 of FIG . 6 , a single heater 140 or
to control the amount of heat generated by a particular groups /regions of heaters 140 may be activated using a
heater. The controller 202 may alternatively , or in addition , 55 minimum number of connections back to the electrical
control the duty cycle for a given heater to control the power circuit 210 and controlled by the optical control
amount of heat generated by a particular heater over time . circuit 220 .
The controller 202 may alternatively, or in addition, scan The optical control circuit 220 may be programmed and
through the heaters to control the amount of heat generated calibrated by measuring the temperature rise at each heater
by a particular heater over time . 60 140. The temperature rise may be associated with incremen
The flex circuit 600 may be formed in , on , or below , one tal power increases to the heaters 140. For example , the
of the layers 260 , 262 , 264 comprising the body 152 of the temperature rise may be associated with a percentage
heater assembly 170. The heaters 140 may be disposed increase, for example 5 % increase, in the power supplied to
above or in conjunction with the flex circuit 600. The flex the heater 140. A temperature map may be obtained using
circuit 600 may be deposited , plated , ink jet printed, screen 65 this method . The map may correlate the CD or temperature
printed or formed in any suitable manner. The positive leads to the power distribution curve for each heater 140. Thus, the
640 and the negative leads 650 may form one or more heater 140 may be used to generate a temperature profile on
US 11,158,526 B2
15 16
the substrate based on a program regulating power settings The heaters 140 may be configured in a pattern 390 to
for the individual heaters 140. The logic can be placed efficiently generate a heat profile along the surface of the
directly in the optical control circuit 220 or in an externally substrate support assembly 126. The pattern 390 may be
connected controller, such as the controller 148 . symmetric about a midpoint 392 while providing clearance
The arrangement of the heaters 140 will now be discussed 5 in and around holes 322 for lift pins or other mechanical,
with reference to FIGS . 3A through 3D . FIG . 3A is a fluid or electrical connections. Each heater 140 may be
cross - sectional view of FIG . 2 along a section line A - A , controlled by the controller 202. The controller 202 may turn
according to one embodiment. FIGS . 3B - 3D are cross- on a single heater 140 defining a heater 340 ; or a plurality
sectional views along the same section line A - A of FIG . 2 , 10
of heaters 140 grouped to define an inner wedge 362 , a
according to alternate embodiments. perimeter group 364 , a pie shaped area 360 , or other desired
Referring now to FIG . 3A , the plurality of heaters 140 are geometric configuration, including non - contiguous configu
disposed along the plane of the cross section line A -A rations. In this manner, temperature can be precisely con
through the body 152 of the heater assembly 170. The trolled at independent locations along the surface of the
thermal choke 216 is disposed between each neighboring 15 substrate support assembly 126, such independent locations
cell 200 , each cell 200 associated with at least one of the not limited to concentric ring such as known in the art.
heaters 140. Additionally, the thermal choke 216 is disposed Although the pattern shown is comprised of smaller units,
along an outer surface 326 of the substrate support assembly the pattern may alternatively have larger and / or smaller
126. The number of cells 200 shown are for illustration only , units, extend to the edge , or have other forms.
and any number of embodiments may have substantially 20 FIG . 3B is a top view of the plurality of heaters 140
more (or less ) cells 200. The number of heaters 140 may be disposed along the plane of the cross section line AA through
at least an order of magnitude greater than the number of the body 152 , according to another embodiment . The ther
main resistive heaters 154. The number of heaters 140 mal chokes 216 may optionally be present. The heaters 140
located across the substrate support assembly 126 may are arranged in the form of a grid , thus defining an array of
easily be in excess of several hundred . 25 temperature control cells 200 also arranged in the grid
Each heater 140 has a resistor 304 ending in terminals pattern . Although the grid pattern of heaters 140 is shown as
306 , 308. As current enters one terminal, such as the an X/Y grid comprised of rows and columns , the grid pattern
terminal labeled 306 , and exits the other terminal, such as of heaters 140 may alternatively have some other uniformly
the terminal labeled 308 , the current travels across the wire packed form , such as a hexagon close pack . It should be
of the resistor 304 and generates heat. The heater 140 may 30 appreciated , as discussed supra , the heaters 140 may be
have a design power density to provide the appropriate activated in groups or singularly.
temperature rise along the outer surface 326 of the substrate FIG . 3C is a top view of the plurality of heaters 140
support assembly 126. The amount of heat released by the disposed along the plane of the cross section line AA through
resistor 304 is proportional to the square of the current the body 152 , according to another embodiment. FIG . 3C
passing therethrough . The power design density may be 35 illustrates a plurality of heaters 140 arranged in a polar array
between about 1 watt /cell to about 100 watt / cell, such as 10 in the body 152. Optionally, one or more of thermal chokes
watt / cell. 216 may be disposed between the heaters 140. The polar
The resistor 304 may be formed from a film of nichrome, array pattern of the heaters 140 defines the neighboring cells
rhenium , tungsten, platinum , tantalum or other suitable 200 , which are thus also be arranged in a polar array .
materials. The resistor 304 may have an electrical resistivity 40 Optionally, thermal chokes 216 may be utilized to isolate
( P ) . A low p indicates a material that readily allows the adjacent cells 200 from neighboring cells 200 .
movement of an electric charge across the resistor 304. The FIG . 3D is a top view of the plurality of heaters 140
resistance ( R) is dependent on the p times the length (1 ) over disposed along the plane of the cross section line A -A
the cross sectional area ( A ) of the wire, or simply R = p.1/ A . through the body 152 , according to another embodiment.
Platinum has a p of about 1.06x10-7 ( Q.m ) at 20 ° C. 45 FIG . 3D illustrates a plurality of heaters 140 arranged in the
Tungsten has a p of about 5.60x10-8 ( 12.m ) at 20 ° C. body 152 in concentric channels. The concentric channel
Nichrome has aa p of about1.1x10-8 to about 1.5x10-8 ( 92 m ) pattern of the heaters 140 may be optionally separated by
at 20 ° C. Of the three aforementioned materials, the resistor thermal chokes 216. It is contemplated that the heaters 140
304 comprised of nichrome allows the electrical charge to and cells 200 may be arranged in other orientations.
move more readily, and thus , generate more heat. However, 50
2 Turning briefly to FIG . 9 , a graphical depiction is pro
the electrical properties for tungsten may differentiate the vided for an alternate wiring schema for the main resistive
material as a resistive heater in certain temperature ranges . heaters 154 and the heaters 140. The wiring schema does not
The resistor 304 may have a film thickness ( not shown) make use of the hardware key (802 in FIG . 7) . The main
and a wire thickness 372 configured to efficiently provide resistive heaters 154 and the heaters 140 may be attached to
heat when a current is passed along the resistor 304. An 55 a controller 902. The controller 902 is attached to a power
increase in the wire thickness 372 for the resistor 304 may source 978 through a common filter 910. Controller 902 is
result in a decrease in the resistance R of the resistor 304 . similar to controller 202 shown in FIGS . 1 and 2 and has a
The wire thickness 372 may range from about 0.05 mm to similar version of the electrical power circuit 210 and the
about 0.5 mm for a tungsten wire and about 0.5 mm to about optical control circuit 220 .
1 mm for aa nichrome wire . 60 The heaters 140(, 1-n) are figuratively shown and should be
Recalling the formula R= p : 1/A , can be seen that the understood that heater 140 , may represent a large group of
material, length of wire , and the wire thickness may be heaters in a common zone , or alternatively, all the heaters
selected for the resistor 304 to control cost , power consump- 140 disposed across the substrate support assembly 126 .
tion, and the heat generated by each heater 140. In one There are an order of magnitude more heaters 140 than main
embodiment, a resistor 304 is comprised of tungsten having 65 resistive heaters 154 , and therefore, an order of magnitude
a wire thickness 372 of about 0.08 mm and aa resistance of more connections to the electrical power circuit 210 and the
about 50 Ohms at 10 watts of power. optical control circuit 220 .
US 11,158,526 B2
17 18
The electrical power circuit 210 accepts a plurality of perature uniformity of the substrate support assembly 126
power ribbons 912 , 922 from both the heaters 140 and the and substrate positioned thereon . The switches 960 control
main resistive heaters 154 through a hole or slot 920 formed ling power to the main resistive heaters 154 may be similarly
through the cooling base 130. The ribbons 912 , 922 , graphi- controlled .
cally depict a number of power leads for each heater 140 and 5 In another embodiment, each main resistive heater 154 (1
main resistive heater 154. For example , power ribbon 912 N ) , representing a separate zone , may have a separate con
comprises separate power leads for the heaters 140 ,( 1 - n ) . In troller 202. In this embodiment, the heaters ( 1-1 ) common to
one embodiment, each power lead has aa switch 960 which a zone with one main resistive heater 154*(, 1-1 ) may share the
may be activated by a respective control lead . It is contem- controller 202 with the common main resistive heater 154
plated that a single ribbon , or even three or more ribbons, 10 ( 1 - N ) : For example, if there were four zones , there would be
may be utilized to route the power leads for the heaters 140 four main resistive heaters 1541-4) and four equally spaced
and main resistive heater 154 . controllers 202. FIG . 10 is a top plan view of the cooling
The optical control circuit 220 accepts a plurality of base 130 having holes 960 configured for the wiring schema
control ribbons 940 , 950 from both the heaters 140 and the of four zones and four equally spaced controllers 202 .
main resistive heaters 154 through the slot 920 formed 15 In other embodiments , separate controllers 202 may be
through the cooling base 130. The ribbons 940 , 950 graphi- utilized to split up the number of heaters 140 serviced by a
cally depict a number of control leads for each heater 140 single controller. Splitting up the control of the heaters 140
and main resistive heater 154. For example , control ribbon allows for smaller controllers and less space required to
940 comprises separate control leads . The optical control route the ribbons through the slots 920 formed through the
circuit 220 may take input, from a program , temperature 20 cooling base , as shown in FIG . 9 .
measuring device , an external controller, a user or by other Returning to FIG . 2 , the number and density of the heaters
source , and determines which heaters 140 and main resistive 140 contribute to the ability for controlling the temperature
heaters 154 to energize. As the optical control circuit 220 uniformity across the substrate to very small tolerances
uses optics to transmit between the input device , the which enables precise process and CD control when pro
switches and electrical controller, the optical controller is 25 cessing the substrate 134. Additionally, individual control of
not subject to RF interference and does not propagate the one heaters 140 relative to another heaters 140 enables
same to regions outside of the processing chamber. It is temperature control at specific locations in the substrate
contemplated that a single ribbon , or even three or more support assembly 126 without substantially affecting the
ribbons , may be utilized to route the control leads . temperature of neighboring areas, thereby allowing local hot
The control leads 940 provide signals generated by the 30 and cool spots to be compensated for without introducing
optical control circuit 220 to control the state of a switch skewing or other temperature asymmetries. The heaters 140
960. The switch 960 may be a field effect transistor, or other may have an individual temperature range between about
suitable electronic switch . Alternately , the switch 960 may 0.0 degrees Celsius and about 10.0 degrees Celsius with the
be embedded in an optically controlled circuit board in the ability to control the temperature rise in increments of about
electrical power circuit 210. The switch 960 may provide 35 0.1 degrees Celsius . In one embodiment, the plurality of
simple cycling for the heaters 154 , 140 between an ener- heaters 140 in the substrate support assembly 126 in con
gized (active) state and a de - energized ( inactive) state . junction with the main resistive heaters 154 have demon
Alternately, the switch may be aa variable resistor, or other strated the ability to control the temperature uniformity of a
suitable device , which can control the amount of power substrate 134 processed thereon to less than about 10.3
supplied to the heaters 154 , 140 . 40 degrees Celsius. Thus, the heaters 140 allow both lateral and
In one embodiment, the controller 202 provides a signal azimuthal tuning of the lateral temperature profile of the
along the control ribbon 940 , to instruct the switch 960 , to substrate 134 processed on the substrate support assembly
allow 50 % of the power to pass therethrough . The power 126 .
power circuit 210 provides about 10 watts of power along FIG . 5 is aa flow diagram for one embodiment of a method
the power ribbon 9121. The switch 960 , allows 50 % of the 45 500 for processing a substrate utilizing a substrate support
supplied power to pass through to a heater 140 , which heats assembly, such as the substrate support assembly described
up with about 5 watts of power. above , among others . The method 500 begins at block 502
In another embodiment, the controller 202 provides a by applying power to a main resistive heater formed in a
signal along the control ribbon 9502 to instruct the switch substrate support assembly. The main resistive heater may
9602 to allow 100 % of the power to pass therethrough. The 50 be a single heater, or segmented into zones . The main
power power circuit 210 provides about 100 watts of power resistive heater zones may be independently controllable .
along the power ribbon 9222. The switch 9602 allows 100 % At block 504 , power is provided to a plurality of heaters
of the supplied power to pass through to the main resistive distributed laterally within the substrate support assembly.
heater 154 , which heats up with about 100 watts of power. At least two of the heaters generating a predetermined
Similarly, the main resistive heaters 154( 1-1) may all be 55 different amount of heat . The difference in heat generated by
operated from controller 202 . one heater relative another may be controlled by controlling
In yet another embodiment, the controller 202 provides a at least one or more of the duty cycle , voltage , current,
signal along the control ribbon 940 to instruct the switches duration of power applied to one heater relative another. The
960 to be in either an active state that allows power to pass power may also be sequentially scanned across heaters.
therethrough or an inactive state that prevents power from 60 Control of the power provided to the heaters may be
passing therethrough . The power power circuit 210 provides provide through an optical signal interfacing with a control
about 10 watts of power along the power ribbon 912 to each ler disposed in the substrate support assembly.
heater 140 coupled to a switch 960 in the active state . The At block 506 , a workpiece, such as a substrate , may be
controller 202 independently controls at least one of the processed on the substrate support assembly. For example,
duration that the switch 960 remains in the active state and 65 the substrate may be processed in a vacuum chamber, for
the duty cycle of each of the switch 960 relative to the other example using a plasma process . The vacuum process ,
switches 960 , which ultimately provides controls the tem- which may be optionally performed in the presence of a
US 11,158,526 B2
19 20
plasma within the processing chamber, may be one of While the foregoing is directed to implementations of the
etching, chemical vapor deposition , physical vapor deposi- present invention, other and further implementations of the
tion , ion implantation , plasma treating, annealing, oxide invention may be devised without departing from the basic
removal, abatement or other plasma process . It is contem- scope thereof, and the scope thereof is determined by the
plated that the workpiece may be processed on the tempera- 5 claims that follow .
ture controlled surface in other environments, for example,
at atmospheric conditions , for other applications . We claim :
Optionally, at block 506 , power provided to the plurality 1. An electrostatic chuck ( ESC ) , comprising:
of heaters distributed laterally within the substrate support 10
a controller; and
assembly may be changed in response to process conditions a dielectric body formed of a single coherent mass of
or a change in a process recipe. For example, the power ceramic material, the dielectric body comprising
provided to the plurality of heaters may be changed utilizing an upper surface and a lower surface,
commands from the controller 202 , or changing one hard- a chucking electrode disposed in the dielectric body,
ware wiring key 802 to a different hardware wiring key 802 . 15 one or more main resistive heaters disposed in the
In addition to the examples described above , some addi dielectric body, and
tional non -limiting examples may be described as follows. a plurality of secondary heaters in column with the
Example 1. A processing chamber comprising: main resistive heaters, each secondary heater
chamber body; coupled to the controller and coupled to an indi
a substrate support assembly , comprising: 20 vidual lead and an individual switch , the controller
an upper surface and a lower surface ; configured to provide power to each individual
one or more main resistive heaters disposed in the sub switch in order to heat each secondary heater, the
strate support assembly; and plurality of secondary heaters disposed in the dielec
a plurality of heaters in column with the main resistive tric body, wherein a quantity of the secondary heaters
heaters and disposed in the substrate support, wherein a 25 is greater than a quantity ofthe main resistive heaters
quantity of the heaters is an order of magnitude greater than and, wherein the controller is configured to enable
a quantity of the main resistive heaters and the heaters are each combination of individual switches to control
independently controllable relative to each other as well as each combination of individual secondary heaters of
the main resistive heaters . the plurality of secondary heaters to be indepen
Example 2. The processing chamber of example 1 , wherein 30 dently controllable between an on and an off state
the substrate support is an electrostatic chuck . without altering an on state for all other individual
Example 3. The processing chamber of example 1 , wherein secondary heaters as well as the one or more main
electrostatic chuck has a ceramic body. resistive heaters.
Example 4. The processing chamber of example 3 , wherein 2. The ESC of claim 1 , wherein the plurality of secondary
at least one of the main resistive heaters and the plurality of 35 heaters are concentrically arranged about a center of the
heaters are formed on the lower surface of the ceramic body. dielectric body into groups of secondary heaters along a
Example 5. The processing chamber of example 3 , wherein common radius.
at least one of the main resistive heaters and the plurality of 3. The ESC of claim 2 , wherein the plurality of secondary
heaters are disposed in a polymer body coupled to the lower heaters are further arranged in a polar grid .
surface of the ceramic body. 40 4. The ESC of claim 1 , wherein the chucking electrode is
Example 6. The processing chamber of example 1 , further disposed between the plurality of secondary heaters and the
comprising : upper surface.
a cooling plate coupled to the substrate support. 5. A substrate support assembly, comprising:
Example 7. The processing chamber of example 6 , further a substrate support having a dielectric body, the dielectric
comprising: 45 body comprising
a heater controller for regulating a temperature output for a substrate support surface and a lower surface and
each heater is coupled to the cooling plate. a plurality of resistive secondary heaters disposed in the
Example 8. The processing chamber of example 7 , wherein dielectric body of the substrate support, each resis
the heater controller includes a fiber optics control circuit tive secondary heater coupled to an individual lead
and an electrical power control. 50 and an individual switch, each of the plurality of
Example 9. A substrate support assembly, comprising: resistive secondary heaters is independently control
a substrate support having a substrate support surface and lable relative to each other;
a lower surface; a main resistive heater coupled to or disposed in the
a plurality of resistive heaters disposed across the sub- dielectric body , the plurality of resistive secondary
strate support, the plurality of resistive heaters grouped into 55 heaters independently controllable relative to the main
concentric zones; and resistive heater ; and
a heater controller coupled each group of resistive heaters , a heater controller coupled to the plurality of resistive
the heater controller operable to control which resistive secondary heaters, the heater controller configured to
heater within a given zone generates more heat than other provide power to each individual switch in order to heat
resistive heaters within the given zone . 60 each resistive secondary heater, wherein the heater
Example 10. The processing chamber of example 9 , wherein controller includes an optical controller and an electri
the heater controller comprises: cal power controller, the optical controller optically
a fiber optics control circuit and an electrical power coupled to a respective state switch for each resistive
control. secondary heater within the plurality of resistive sec
Example 11. The processing chamber of example 9 , wherein 65
, ondary heaters and wherein the heater controller is
the heater controller comprises : configured to enable each combination of individual
one or more hardware wiring keys . switches to independently power each combination of
US 11,158,526 B2
21 22
resistive secondary heaters relative to a quantity of all groups of secondary heaters along a common
other resistive secondary heaters , the quantity being radius within the dielectric body, each secondary
greater than or equal to 2 . heater coupled to the controller and coupled to an
6. The substrate support assembly of claim 5 , wherein the individual lead and an individual switch, the con
substrate support is an electrostatic chuck and the dielectric 5 troller configured to provide power to each indi
body of the electrostatic chuck is ceramic . vidual switch in order to heat each secondary
7. The substrate support assembly of claim 5 , wherein the heater, wherein a quantity of the secondary heaters
plurality of resistive secondary heaters are concentrically is greater than quantity of the main resistive
arranged in groups of resistive secondary heaters along a heaters and, wherein the controller is configured to
common radius. 10
enable each combination of individual switches to
8. The substrate support assembly of claim 7 , wherein the control each combination of secondary heaters
main resistive heater is formed on the lower surface of the
dielectric body. within the plurality of secondary heaters to be
9. The substrate support assembly of claim 7 , wherein the independently addressable and controlled between
main resistive heater is disposed in a polymer body coupled 15 an off and an on state relative to an on state for all
to the lower surface of the dielectric body. other secondary heaters as well as the main resis
10. The substrate support assembly of claim 5 , further tive heaters and wherein each combination of
comprising: secondary heaters is configured to receive a volt
a cooling plate coupled to the substrate support. age or current independently of a voltage or cur
rent
11. The substrate support assembly of claim 5 , wherein a 20 13. The processing applied to each of the other secondary heaters .
chucking electrode is disposed between the plurality of plurality chamber of claim 12 , wherein the
resistive secondary heaters and the substrate support surface . grid . of secondary heaters are further arranged in a polar
12. A processing chamber comprising: 14. The processing chamber of claim 12 , wherein the
a chamber body; chucking electrode is disposed between the plurality of
a controller; and 25
secondary heaters and the upper surface .
a substrate support assembly, having an 15. The processing chamber of claim 12 , further com
electrostatic chuck, the electrostatic chuck having a prising :
dielectric body formed of a single coherent mass of a heater controller for regulating a temperature output for
ceramic material, the dielectric body comprising each secondary heater coupled to a cooling plate , the
an upper surface and a lower surface, 30
heater controller providing a range of current or voltage
a chucking electrode disposed within the dielectric to each secondary heater independently of other sec
body,
one or more main resistive heaters disposed in the ondary heaters.
dielectric body, and 16. The processing chamber of claim 15 , wherein the
a plurality of secondary heaters in column with the 35 heater controller includes a fiber optics control circuit and an
main resistive heaters and being concentrically electrical power control.
arranged about a center of the dielectric body into

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US011158526B2

( 12) United States Patent ( 10) Patent No .: US 11,158,526 B2

( 56 ) References Cited 2014/0096909 A1 4/2014 Singh et al.

104 133 122 124 102

144 138 156 142 178

130 130 130

865 862 866 806

126 154 846 860

9402 220 978

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