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RF Wireless Semiconductors

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0% found this document useful (0 votes)
27 views

RF Wireless Semiconductors

Uploaded by

Andriy Syrota
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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NEC XXXXXXXXXX

2014

RF & Wireless
Semiconductors
P R O D U C T S b y A P P L I C AT I O N
About CEL Front End Components for
UHF to 2.5GHz Applications 2

LNAs for L to C-Band Applications 3


California Eastern Laboratories (CEL) is the exclusive sales
2.4 & 5.8 GHz WLAN / Wi-Fi / WiMAX Devices 4
and marketing partner in the Americas for products made by
P R O D U C T S P E C I F I C AT I O N S
the Compound Semiconductor Devices Business Division
RF Switch ICs
(CSDBD) of Renesas Electronics Corporation, formerly
SPDTs (Single Pole Double Throw) 5
NEC Electronics Corporation. These products include RF
DPDTs (Double Pole Double Throw) 5
components, Optocouplers, Solid State Relays, and Lasers GaAs FETs

and Detectors for Fiber Optics. Low Noise GaAs FETs, 1 to 20GHz 6

Silicon MOSFET Devices

RF Power LD-MOSFETs 6
CEL serves designers, OEMs and contract manufacturers
MOSFET for Microphone
in the RF & Wireless, Mobilecomm, Multimedia, Broadband Impedance Conversion 6

Communications, Industrial Control, and Automated Test Silicon Bipolar Transistors

Small Signal Silicon Devices 7


Equipment (ATE) markets. With over 50 years experience in
Medium Power Transistors 7
high frequency design, customer support and fulfillment, CEL
Twin Transistors 7
is ide­ally positioned to provide its customers with solutions Silicon RFICs

tailored to meet their specific needs. 3V Silicon MMIC Amplifiers 8

5V Silicon MMIC Amplifiers 8

Frequency Upconverters 9
CEL maintains extensive inventories and provides
Frequency Downconverters 9
engineering and applications assistance at its technical
CEL /JEITA Cross Reference List 9
centers in Santa Clara, CA. and Wauconda, IL. The Package Dimensions 10

company supports customers through sales offices, sales

representatives and distributors in numerous locations. S-Parameters, SPICE Models, App Notes, Data
Sheets, and more are available at cel.com/rf

CEL Headquarters

4590 Patrick Henry Drive


Santa Clara, CA 95054
Tel: (408) 919-2500
Fax: (408) 988-0279

www.cel.com

1
UPG2253T6S Front End IC

Front End Components


Power for UHF to 2.5 GHz Applications
Amplifiers

Wi-Fi • Bluetooth • ZigBee • Automated Meter Reading • Mesh & Home Area Networks • ISM Band applications

LNAs

IN
High/Medium
Power RFIC
Switches Transceiver

OUT

Power Low Power


Amplifiers RFIC Switches

RFIC Switches (additional P/Ns available, see page 5) 450 MHz 915 MHz 2.4 GHz
UPG2409TB / T6X SPDT, High power, SOT-363 and TSON/QFN package options 4 4 4
LNAs
UPG2176T5N SPDT, High power, internally terminated (absorptive) 4 4 4
2.4 GHz
UPG2415TK / T6X SPDT, High power, miniature and TSON/QFN package options 4 4 4
UPG2408TB / TK SPDT, Medium power, SOT-363 and more compact package options
5 - 6 GHz
4 4 4
UPG2406TK SPDT, Medium power, compact package (opposite logic vs. UPG2408TX) 4 4 4
Chipset
UPG2214TB / TK SPDT, Low power, High Isolation, SOT-363 and compact package options 4
Transceiver 4 4
UPD5713TK SPDT, Single Control, ideal for low frequency applications 4 4
UPG2164T5N DPDT, Diversity/ Transfer Switch (two selectable RF paths on) 2.4 GHz 4 4 4
Power Amplifier Transistors (additional P/Ns available, see page 6) 450 MHz 915 MHz 2.4 GHz
SPDT or DPDT 5 - 6 GHz
NE5550979A +39.5dBm, 9W, RFIC
7.5V Switches
LD MOSFET 4 4
NE5550234 +33dBm, 2W, 7.5V LDMOS FET 4 4
NE664M04 +26dBm, 3.6V Silicon Discrete 4 4 4
NE678M04 +18dBm, 3.0 V Silicon Discrete 4 4 4
NE677M04 +15dBm, 3.0 V Silicon Discrete 4 4 4
Low Noise Amplifier Transistors 450 MHz 915 MHz 2.4 GHz
NE662M04 Silicon Discrete, NF = 1.1, Ga = 16.0, OIP3 = +22dBm @ 2GHz 4 4 4
NE3509M04 GaAs FET, NF = 0.40, Ga = 17.5, OIP3 = +22dBm @ 2 GHz 4 4
NE3508M04 GaAs FET, NF = 0.45, Ga = 14.0, OIP3 = +31dBm @ 2 GHz 4 4

2 www.cel.com/rf
GPS
Receiver
IC
Low Loss RFIC High Rejection
Pre-Filter LNA Post-Filter
LNAs for L to C-Band Applications
First, second and third stage devices for applications from 1 to 8GHz

Tuner /
Receiver

FIRST Filter SECOND THIRD


STAGE STAGE STAGE

LNAs by Application
Application Frequency FIRST STAGE SECOND STAGE THIRD STAGE
NE3508M04
NE3508M04
Satellite Radio and DAB 1.4 – 2.35 GHz NE3509M04 NE3508M04
NE662M04
NE3510M04

LNA Performance (see Data Tables for additional specifications)


NF Gain P1dB
Part Number Description Package
(dB) (dB) (dBm)
NE3508M04 GaAs HJ-FET 0.45 @ 2.0 GHz 14.0 @ 2.0 GHz +18.0 M04
NE3509M04 GaAs HJ-FET 0.40 @ 2.0 GHz 17.5 @ 2.0 GHz +14.0 M04
NE3510M04 GaAs HJ-FET 0.35 @ 2.0 GHz 19.0 @ 2.0 GHz +12.0 M04
NE662M04 Silicon Transistor 1.1 @ 2.0 GHz 16.0 @ 2.0 GHz M04

www.cel.com/rf 3
OUT

2.4 & 5.8 GHz WLAN / Wi-Fi / WiMAX Devices


Power Low Power
Amplifiers RFIC Switches
Single and multi-throw switches, transistor, RFICs, discrete Silicon and GaAs low noise amplifiers designed specifically for Dual Band WLAN and WiMAX.

LNAs

2.4 GHz

5 -6 GHz

Chipset
Transceiver

2.4 GHz

SPDT or DPDT 5 - 6 GHz


RFIC Switches

GaAs RFIC Switches to 2.5GHz — Single & Multi Throw


UPG2408TB SPDT, 3V, 0.50dB Insertion Loss, High ESD immunity
UPG2406TK SPDT, 1.8 or 2.7V control voltage, 0.45dB Insertion Loss @ 2GHz, High ESD immunity
GaAs RFIC Switches – Broadband to 6GHz
UPG2422TK SPDT for Dual Band WLAN, very cost-effective, 1.8-5.3V control voltage range
UPG2163T5N SPDT, Insertion Loss: 0.4dB @ 2.4 GHz, 0.5dB @ 6 GHz, Isolation = 30dB @ 6GHz
UPG2176T5N SPDT 2.4 – 6 GHz, Insertion Loss: 0.5 dB @ 2.4GHz, 0.7 dB @ 5.5 GHz, internal terminations
UPG2415TK / T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications
UPG2409T6X SPDT for Dual Band WLAN, high power, low insertion loss for Access Point applications
UPG2409TB SPDT 2.0 – 4.0 GHz, Insertion Loss: 0.45dB @ 2.5GHz, 0.6dB @ 3.8 GHz
UPG2164T5N DPDT, Insertion Loss: 0.5dB @ 2.4 GHz, 0.7dB @ 5.5 GHz, 17 dB Isolation @ 6GHz
UPG2162T5N DPDT, Insertion Loss: 0.6dB @ 2.4 GHz, 0.85dB @ 5.5 GHz, 27 dB Isolation @ 6 GHz
LNAs
NE3509M04 GaAs HJ FET, super low 0.40 dB noise figure, 17 dB gain @ 2.5 GHz, OIP3 = +22dBm
NE3508M04 GaAs HJ FET, super low 0.45 dB noise figure, 14 dB gain @ 2.5 GHz, OIP3 = +31dBm

4 www.cel.com/rf
RF Switch ICs

SPDTs (Single Pole Double Throw)


TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)
Input Power Input Power
Part Control Insertion @ 0.1 dB @ 1.0 dB Package
Frequency Isolation Description
Number Voltages Loss Code
compression compression
(GHz, max) (V) (dB)
(dB) point point
(dBm) (dBm)
Single Control (1.8-Vdd),
UPD5713TK 2.5 +1.8, 2.8/0 0.80 @ 2GHz 25 @ 2GHz +17 +21 TK
small size package, CMOS
High power handling, low insertion loss,
UPG2009TB 3.0 +2.8/0 0.30 @ 2GHz 28 @ 2GHz +34 – TB
high isolation
UPG2030TK 3.0 +2.8/0 0.30 @ 2GHz 27 @ 2GHz +27 +30 TK Medium power, small size package
High power handling, low harmonics, lowest
UPG2155TB 2.5 +2.6/0 0.40 @ 2GHz 19 @ 2GHz +37 – TB
cost high power switch
0.4 @ 2.5GHz 35 @ 2.5GHz +35 @ 2.5GHz Highest isolation,
UPG2163T5N 8.0 +3.0/0 – T5N
0.5 @ 6GHz 30 @ 6GHz +29 @ 6GHz great 2.4 and 6GHz performance
Absorptive, high power
UPG2176T5N 6.0 +3.0/0 0.55 @ 3.5GHz 24 @ 3.5GHz – +37 T5N
and high linearity to 6GHz
+20 (1.8V), Low insertion loss, high isolation,
UPG2214TB 3.0 +1.8, 3.0/0 0.30 @ 2GHz 27 @ 2GHz +23 TB
26(3.0V) medium power, 1.8V-5.3V.
+20 (1.8V), Small size package, low inseriton loss, high
UPG2214TK 3.0 +1.8, 3.0/0 0.30 @ 2GHz 27 @ 2GHz +23 TK
26(3.0V) isolation, medium power, 1.8V-5.3V.
+25 (1.8V), Small size package,
UPG2406TK 3.0 +1.8, 2.7/0 0.45 @ 2GHz 19 @ 2GHz +29 TK
30.5 (3.0V) cost effective medium power, 1.8V-5.3V
UPG2408TB 3.0 +3.0/0 0.48 @ 2GHz 19 @ 2GHz +29 – TB Lowest cost medium power for UHF-3GHz
Small size package,
UPG2408TK 3.0 +3.0/0 0.48 @ 2GHz 19 @ 2GHz +29 – TK
cost effective medium power
0.45 @ 2.5GHz 26 @ 2.5 GHz Lowest Cost high power SPDT, for Access
UPG2409TB 3.8 +3.0/0 +33.5 +35 TB
0.60 @ 3.8GHz 19 @ 3.8GHz Points to 3.8GHz
0.45@ 2.5GHz 30 @ 2.5 GHz High power, for Access Points to 6GHz,
UPG2409T6X 6.0 +3.0/0 +34 +36 T6X
0.65@6GHz 27 @6 GHz 1.5mm QFN package
0.45 @ 2.5GHz 28 @ 2.5 GHz High power handling for Access Points to
UPG2415TK 6.0 +3.0/0 +31 +34 TK
0.65 @ 6GHz 26 @6 GHz 6GHz, small size package
0.45 @ 2.5GHz 28 @ 2.5 GHz High power handling for Access Points to
UPG2415T6X 6.0 +3.0/0 +31 +35 T6X
0.55 @ 6GHz 26 @6 GHz 6GHz, 1.5mm QFN package
Lowest cost 6GHz SPDT, medium power,
0.35 @ 2.5GHz, 28 @ 2.5GHz
UPG2422TK 6.0 +1.8, 3.0/0 +28 @ 2-6GHz +31 @ 6GHz TK small size package, low inseriton loss, high
0.55 @ 6GHz 24 @ 6GHz
isolation, 1.8V-5.3V

DPDTs (Double Pole Double Throw)


TYPICAL ELECTRICAL CHARACTERISTICS (TA = 25°C)
Input Power Input Power
Part Control @0.1 dB @1.0 dB Package
Frequency Insertion Loss Isolation Description
Number Voltages Code
compression compression
(GHz, max) (V) (dB) (dB)
point point
(dBm) (dBm)
0.5 @ 2.4GHz 25 @ 2.4GHz +31 Lowest cost, lowest insertion loss DPDT.
UPG2164T5N 6.0 +3.0/0 – T5N
0.7 @ 5.5GHz 17 @ 5.5GHz +29 6GHz operation.
0.6 @ 2.4GHz 30 @ 2.4GHz +31 Best isolation of all DPDTs,
UPG2162T5N 6.0 +3.0/0 – T5N
0 .85 @ 5.5GHz 27 @ 5.5 GHz +29 up to 6GHz operation
Only one control pin, low frequency
UPD5738T6N 2.5 +2.8/0 0.8 @ 1GHz 22 @ 1GHz +15 +20 T6N
operation, CMOS, 1.5V-3.6V

www.cel.com/rf 5
GaAs FETs

Low Noise GaAs FETs, 1 to 20GHz Typical Specifications @ TA = 25°C

Recommended NF/GA Bias Power Bias


Gate Gate Test Chip /
Part Frequency NFOPT GA P1dB Chip / Package
Length Width Frequency Package
Number Range VDS IDS (dB) (dB) VDS IDS (dBm) Description
(μm) (μm) (GHz) Code
(GHz) (V) (mA) (V) (mA)

NE3503M04 0.2 160 2 to 18 12 2.0 10 0.55 11.5 — — — M04 Plastic SMD


NE3508M04 0.6 800 1 to 6 2 2.0 10 0.40 14.0 3.0 30 +18.0 M04 Plastic SMD
NE3509M04 0.6 400 1 to 6 2 2.0 10 0.45 17.5 3.0 20 +14.0 M04 Plastic SMD
NE3510M04 0.6 280 1 to 6 2 2.0 10 0.35 19.0 3.0 30 +12.0 M04 Plastic SMD
NE3511S02 0.2 160 4 to 18 12 2.0 10 0.30 13.5 — — — S02 Micro-X Plastic
NE3512S02 0.2 160 4 to 18 12 2.0 10 0.35 13.5 — — — S02 Micro-X Plastic
NE3513M04 0.2 160 10 to 14 12 2.0 6 0.45 13.0 — — — M04 Plastic SMD
NE3514S02 0.2 160 4 to 20 20 2.0 10 0.75 10.0 — — — S02 Micro-X Plastic
NE3515S02 0.2 200 6 to 18 12 2.0 10 0.3 12.5 3.0 25 +14.0 S02 Micro-X Plastic
NE3516S02 0.2 160 6 to 18 12 2.0 10 0.35 14.0 — — — S02 Plastic SMD
NE3520S03 — 160 10 to 26 20 2.0 10 0.65 13.5 — — — S03 Micro-X Plastic
NE3521M04 — — 10 to 26 20 2.0 10 0.85 11 — — — M04 Plastic SMD

Silicon MOSFET Devices


RF Power LD-MOSFETs Typical Specifications @ TC = 25°C
POUT Linear Gain Test Conditions
Part
(dBm) (dB) Freq PIN VDS IDSQ Package Description
Number
TYP TYP (GHz) (dBm) (V) (mA)

+33 23.5 0.46 +15 7.5 40 34 Pkg: Compact SMT


NE5550234
+32.2 18.3 0.90 +17 7.5 40

NE5550279A +33 22.5 0.46 +15 7.5 40 79A Pkg: Compact SMT

+38.5 22 0.46 +25 7.5 140 79A Pkg: Compact SMT


NE5550779A
+37.4 17 0.90 +27 7.5 140

+39.5 22 0.46 +25 7.5 200 79A Pkg: Compact SMT


NE5550979A
+38.6 16 0.90 +27 7.5 200
NE5531079A +40.0 20.5 0.46 +25 7.5 200 79A Pkg: Compact SMT

MOSFET for Microphone Impedance Conversion


Supply Circuit Input Output Noise Total Harmonic
Part Voltage Gain HBM ESD M53 Package
Voltage Current Capacitance Voltage Distortion
Number (dB) (KV) (mm)
(V) (μA) (pF) (dBV) (%)

NE5820M53 2 85 1.5 -3 -114 0.1 >8 1.0 x 1.2 x 0.33

6 www.cel.com/rf
Silicon Bipolar Transistors

Small Signal Silicon Devices


TEST NF /GA NF GA MAG/MSG fT IC
Part f hFE
VCE ICQ TYP TYP VCE IC TYP TYP MAX Package Description
Number TYP
(GHz) (V) (mA) (dB) (dB) (V) (mA) (dB) (GHz) (mA)
NE202930 1.0 5 5 1.15 13.5 5 30 15.5 11 140 100 30 Pkg: 3 pin Super Mini Mold, SOT-323 style
NE662M04 2.0 2 5 1.1 16 2 20 20 23 70 35 M04 Pkg: 4 pin low profile SOT-343 style
NE66219 2.0 2 5 1.5 12.0 2 20 14 21 80 35 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style
NE68018 2.0 6 5 1.8 10.0 1 1 12.5 10 100 35 18 Pkg: 4 pin Super Mini Mold
NE68019 2.0 3 5 1.9 9.0 1 1 12.0 8 120 35 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style
NE68030 2.0 6 5 1.7 9.5 6 10 8.5 10 100 35 30 Pkg: 3 pin Super Mini Mold, SOT-323 style
NE68033 2.0 6 5 1.8 9.0 6 10 8.0 10 100 35 33 Pkg: 3 pin Mini Mold, SOT-23 style
NE68039 2.0 6 5 1.7 11.0 6 10 9.0 10 100 35 39 Pkg: 4 pin Mini Mold
NE68118 1.0 2.5 3 1.1 13.0 2.5 3 16.0 9 100 65 18 Pkg: 4 pin Super Mini Mold
NE68119 1.0 2.5 3 1.1 12.0 2.5 3 15.5 7 120 65 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style
NE68130 1.0 8 7 1.5 13.5 8 20 13.0 7 120 65 30 Pkg: 3 pin Super Mini Mold, SOT-323 style
NE68133 1.0 8 7 1.2 13.0 8 20 11.0 9 100 65 33 Pkg: 3 pin Mini Mold, SOT-23 style
NE68139 1.0 8 7 1.2 13.5 8 20 15.0 9 100 65 39 Pkg: 4 pin Mini Mold, SOT-143 style
NE68518 2.0 2.5 3 1.5 8.5 2.5 3 12.0 12 110 30 18 Pkg: 4 pin Super Mini Mold
NE68519 2.0 2.5 3 1.5 7.5 2.5 3 11.0 12 110 30 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style
NE85618 1.0 2.5 3 1.4 11.0 2.5 3 14.0 6.5 120 100 18 Pkg: 4 pin Super Mini Mold
NE85619 1.0 2.5 3 1.5 10.0 2.5 3 13.5 4.5 120 100 19 Pkg: 3 pin Ultra-Super Mini Mold, SC-90 style
NE85630 1.0 10 7 1.3 12.0 10 20 12.0 4.5 110 100 30 Pkg: 3 pin Super Mini Mold, SOT-323 style
NE85633 1.0 10 7 1.4 9.0 10 20 11.5 7 120 100 33 Pkg: 3 pin Mini Mold, SOT-23 style
NE85639 1.0 10 7 1.5 13.5 10 20 13.0 7 120 100 39 Pkg: 4 pin Mini Mold, SOT-143 style
NE97733 1.0 –8 –3 1.5 10.0 –8 –20 12.0 8.5 60 –50 33 Pkg: 3 pin Mini Mold, SOT-23 style (PNP)
NE97833 1.0 – 10 –3 2.0 7.0 –10 –15 10.0 5.5 40 –50 33 Pkg: 3 pin Mini Mold, SOT-23 style (PNP)

Medium Power Transistors


TEST P1dB MAG / MSG fT IC
Part hFE
f VCE ICQ TYP VCE IC TYP TYP MAX Package Description
Number TYP
(GHz) (V) (mA) (dBm) (V) (mA) (dB) (GHz) (mA)

NE46134 1.0 12.5 100 27.5 10 50 9 5.5 100 250 34 Pkg: 4 pin SOT-89 style

NE461M02 1.0 12.5 100 27.5 10 50 11 5.5 120 250 M02 Pkg: 4 pin high gain SOT-89 style

NE663M04 2.0 2 50 16 2 50 15 18 100 100 M04 Pkg: 4 pin low profile SOT-343 style

NE664M04 1.8 3.6 200 26 3 100 12 20 60 500 M04 Pkg: 4 pin low profile SOT-343 style

NE677M04 1.8 2.8 23 15 3 20 16 15 120 50 M04 Pkg: 4 pin low profile SOT-343 style

NE678M04 1.8 2.8 40 18 3 30 13.5 12 120 100 M04 Pkg: 4 pin low profile SOT-343 style

NE85634 1.0 10 40 22 10 40 11 6.5 120 100 34 Pkg: 4 pin SOT-89 style

NE856M02 1.0 10 40 22 10 50 14 6.5 120 100 M02 Pkg: 4 pin high gain SOT-89 style

Twin Transistors

TEST NF/GA NF/GA NF GA |S21E | fT IC


Part MAG hFE Pkg. Package
f VCE IC TYP TYP TYP MAX Die
Number (dB) VCE IC TYP TYP Code Style
(GHz) (V) (mA) (dB) (dB) (V) (mA) (dB) (GHz) (mA)

UPA800T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 S06 SOT-363 NE680

UPA801T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 S06 SOT-363 NE856
UPA802T 1.0 3 7 1.4 14.0 16.0 3 7 12.0 7.0 100 65 S06 SOT-363 NE681
UPA806T 2.0 3 3 1.5 7.5 11.0 3 10 8.5 12.0 110 30 S06 SOT-363 NE685
UPA810T 1.0 3 7 1.2 10.0 14.0 3 7 9.0 4.5 120 100 S06 SOT-363 NE856
UPA811T 2.0 3 5 1.9 9.0 12.0 3 5 7.5 8 120 35 S06 SOT-363 NE680

www.cel.com/rf 7
Silicon RFICs

3V Silicon MMIC Amplifiers

Typical ELECTRICAL CHARACTERISTICS1 (TA = 25°C)


Frequency
Part Range ICC NF Gain RLIN RLOUT P1dB ISOL Package Package
Number @ 3dB VCC (mA) (dB) (dB) (dB) (dB) (dBm) (dB) Code Style
down (V)
(MHz) MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP

UPC2745TB 2 2700 3 5 7.5 10 6.0 9 12 14 11 5.5 -3.0 38 S06 / TB SOT-363

UPC2746TB 2 1500 3 5 7.5 10 4.0 16 19 21 13 8.5 -3.7 45 S06 / TB SOT-363

UPC2748TB 3
1500 3 4.5 6 8 2.8 16 19 21 11.5 8.5 -8.5 40 S06 / TB SOT-363

UPC2749TB 4
2900 3 4 6 8 4 13 16 18.5 10 13 -12.5 30 S06 / TB SOT-363

UPC2762TB 4 2900 3 — 27 35 7.0 11.5 15.5 17.5 8.5 12 +7 25 S06 / TB SOT-363

UPC8178TK4 2700 3 1.4 1.9 2.4 5.5 9.0 11.0 13.5 8 — -8.0 41 TK 6 pin Recessed Lead

UPC8179TK 4
Note 5 3 2.9 4.0 5.4 5.0 13.0 15.5 17.5 7 — 0.5 42 TK 6 pin Recessed Lead

Notes: 1. ZL = 50 Ω for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 900 MHz test condition 4. f = 1900 MHz test condition
5. 100 – 2400MHz with output port matching

5V Silicon MMIC Amplifiers

Typical ELECTRICAL CHARACTERISTICS1 (TA = 25°C)


Frequency
Part Range ICC NF Gain RLIN RLOUT P1dB ISOL Package Package
Number @ 3dB VCC (mA) (dB) (dB) (dB) (dB) (dBm) (dB) Code Style
down (V)
(MHz) MIN TYP MAX TYP MIN TYP MAX TYP TYP TYP TYP

UPC2708TB 3 2900 5 20 26 33 6.5 13 15 18.5 11 20 +9.2 23 S06 / TB SOT-363

UPC2709TB 3 2300 5 19 25 32 5.0 21 23 26.5 10 10 +8.7 31 S06 / TB SOT-363

UPC2710TB 2
1000 5 16 22 29 3.5 30 33 36.5 6 12 +10.8 39 S06 / TB SOT-363

UPC3223TB 3
3200 5 15 19 24 4.5 20.5 23 22.5 12 12 +6.5 33 S06 / TB SOT-363

UPC3224TB 3 3200 5 7.0 9.0 12.0 4.3 19 21.5 24 12 17 -3.5 40 S06 / TB SOT-363

Notes: 1. ZL = 50 Ω for all Electrical Characteristics 2. f = 500 MHz test condition 3. f = 1000 MHz test condition 4. f = 1900 MHz test condition

8 www.cel.com/rf
Silicon RFICs continued

Frequency Upconverters
ELECTRICAL CHARACTERISTICS (TA = 25°C)
IF Input
RF Output
Frequency Conversion PSAT 1 Noise
Part Frequency ICC Package Package
Range VCC Gain (dBm) Figure
Number Range (mA) OIP3 Code Style
@3 dB Down (V) (dB) (dB)
(MHz) (MHz)

TYP TYP TYP TYP TYP TYP

UPC8106TB 2
50-400 400-2000 3.0 9.0 10.0 -2.0 8.5 +5.5 S06 /TB SOT-363

UPC8172TB 3 50-400 800-2500 3.0 9.0 8.5 0.0 10.4 +6.0 S06 /TB SOT-363
Notes: 1. PIN = 0 dBm 2. RF = 900 MHz, LO = 660 MHz, PLO = -5 dBm 3. RF = 1900 MHz, LO = 1660 MHz, PLOIN = -5 dBm

Frequency Downconverters
ELECTRICAL CHARACTERISTICS (TA = 25°C)
RF Input IF Output
Frequency Frequency Conversion PSAT Noise
Part ICC Test Package Package
Range Range VCC Gain (dBm) Figure
Number (mA) Condition Code Style
@3 dB Down @3 dB Down (V) (dB) (dB)
(MHz) (MHz) (Note)

TYP TYP TYP TYP TYP TYP

UPC2756TB 100-2000 10-300 3.0 5.9 14 -12 13 3 S06 / TB SOT-363

UPC2757TB 1
100-2000 20-300 3.0 5.6 13 -8 13 4 S06 / TB SOT-363

UPC2758TB1 100-2000 20-300 3.0 11 17 -4 13 4 S06 / TB SOT-363

UPC8112TB1 800-2000 100-300 3.0 8.5 13 -3 11.2 5 S06 / TB SOT-363

Note: 1. AGC Amp and Mixer Block only

CEL /JEITA1 Cross Reference List

CEL Part Number JEITA1 Part Number CEL Part Number JEITA1 Part Number

NE46134 2SC4536 NE68119 2SC5007

NE461M02 2SC5337 NE68130 2SC4227

NE46234 2SC4703 NE68133 2SC3583

NE66219 2SC5606 NE68139 2SC4094

NE662M04 2SC5508 NE68518 2SC5015

NE663M04 2SC5509 NE68519 2SC5010

NE664M04 2SC5754 NE85618 2SC5011

NE677M04 2SC5751 NE85619 2SC5006

NE678M04 2SC5753 NE85630 2SC4226

NE68018 2SC5013 NE85633 2SC3356

NE68019 2SC5008 NE85634 2SC3357

NE68030 2SC4228 NE856M02 2SC5336

NE68033 2SC3585 NE97733 2SA1977

NE68118 2SC5012 NE97833 2SA1978

Notes: 1. JEITA = Japan Electronics and Information Technology Industries Association

www.cel.com/rf 9
Package Dimensions Units in mm
These dimensions are for the package only. For detailed dimensions including leads, please refer to the datasheet.

18 Package (1.25 x 2.0 x 0.9) 19 Package (0.8 x 1.6 x 0.75) 30 Package (1.25 x 2.0 x 0.9) 33 Package (1.5 x 2.9 x 1.4)

Top View Side View Top View Side View Top View Side View Top View Side View

34 Package (2.5 x 4.5 x 1.5) 39 Package (1.5 x 2.9 x 1.1) 79A Package (4.2 x 4.4 x 0.9) M02 Package (2.45 x 4.5 x 1.5)

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M04 Package (1.25 x 2.0 x 0.6) M05 Package (1.25 x 2.0 x 0.6) M53 Package (1.0 x 1.2 x 0.33) S02 / S03 Package (2.6 x 2.6 x 1.5)

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T / TB / S06 Package (1.25 x 2.0 x 0.9) TK Package (1.1 x 1.5 x 0.55) T5N / T6N Package (1.5 x 1.5 x 0.37) T6X / TSON 6 Package (1.5 x 1.5 x 0.37)

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10 www.cel.com/rf
U.S. Sales
Representatives
CEL Headquarters
CT / MA / ME / NH / RI / VT Kansas MD / VA / WV
Anchor Engineering Stan Clothier Co. Strategic Sales Inc. 4590 Patrick Henry Drive
Tel: (508) 898-2724 Tel: (913) 894-1675 Tel: (410) 964-0097 Santa Clara, CA 95054
AZ / NM / NV MN / ND / SD Colorado / Utah
Tel: (408) 919-2500
Bager Electronics Stan Clothier Co. Thorson Rocky Mountain Fax: (408) 988-0279
Tel: (480) 968-7406 Tel: (952) 944-3456 Tel: (303) 773-6300
www.cel.com
Southern CA - LA / OC / SD Missouri Indiana / Kentucky
Infinity Sales Stan Clothier Co. TMC
Tel: (714) 669-8520 Tel: (636) 916-3777 Tel: (317) 844-8462

Upstate New York Wisconsin Michigan


Ontec SSI Stan Clothier Co. TMC
Tel: (585) 388-7870 Tel: (608) 882-0686 Tel: (248) 592-0814
CEL Regional Sales Offices
Illinois Northern NJ / NYC / LI Ohio / West PA
CEL West CEL Southeast
Stan Clothier Co. Strategic Sales Inc. TMC
Tel: (408) 919-2231 Tel: (408) 919-2618
Tel: (847) 781-4010 Tel: (973) 808-5060 Tel: (513) 984-6720
Fax: (408) 538-9000 Fax: (410) 558-6765
lowa Southern NJ / East PA / DE TX / OK / AR / LA
CEL Southwest CEL Northeast
Stan Clothier Co. Strategic Sales Inc. TTS
Tel: (760) 217-5190 Tel: (408) 919-2618
Tel: (319) 393-1576 Tel: (856) 489-3883 Tel: (972) 387-3601
Fax: (408) 538-9000 Fax: (410) 558-6765

CEL Central CEL International


Tel: (408) 919-2619 Tel: (408) 919-2615
Fax: (913) 273-0741 Fax: (908) 543-1013
Asia Mexico South America
CEL South Central CEL Office for
Tel: (408) 919-2619 Distribution Partners
India Zapopan, Jalisco Brazil
Fax: (913) 273-0741 Tel: (408) 919-2500
International Marketing Everest Sales & Solutions VLA Solutions
Fax: (408) 988-0279
Services Tel: +(53) 33-3123-0848 Tel: +(55) 115-505-8011
Tel: +(91) 80-2286-4005
Naucalpan, EDO de Africa/Middle East
Hong Kong Mexico
CEL Administrative Office Everest Sales & Solutions South Africa
Tel: +(852) 35270641 Tel: +(52) 55-5343-2064 RF Design
Tel: 27 (0) 21-555-8400
Canada Monterrey, Nuevo Leon
Everest Sales & Solutions Israel
Ontario, Quebec, Tel: +52-1(811) 290-1290 Semix Marketing &
Maritime Provinces Engineering Ltd.
Astec Components Ltd. Ciudad Juarez, Tel: +(972) 3-910-9910
Tel: (905) 607-1444 Chihuahua
Everest Sales & Solutions
Tel: +52-1(656) 199-7094

Tijuana, Baja California


Everest Sales & Solutions
Tel: +52(664) 681-5509

© 2014 California Eastern Laboratories 01.2014/4M

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www.cel.com/rf

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