Chapter 4 - EEF 269
Chapter 4 - EEF 269
Presented by
Dr DJOB Roger
PhD in physics.
c
Copyright° DJOB Roger Bertin, rogerdjob@yahoo.fr
Contents i
q
Figure 3.1 Examples of equipotential surfaces. (a): V = 4πε0 r
and (b): V =
σ
V0 − 2ε0
|z| . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Objectives
Develop the capacity to apply Physics principles to electrical engineering problems.
Content
1. Mechanics:
• Solid Mechanics
• Statics
• Dynamics
2. Electricity
• Electric Potential
Outcome
At the end of this course, students will be able to:
• Explain the operation of many electrical systems in terms of the Physical principles
governing their behaviour.
• Explain the behaviour of many semiconductor devices in terms of the physical prin-
ciples used in designing them.
The electric force between two charges q1 and q2 can be described by Coulomb’s Law.
1 q1 q2
F~12 = 2
r̂12 (1.1)
4πε0 r12
The total force experienced by charge q1 is the vector sum of the forces on q1 exerted
by other charges.
F~1 = F~1,2 + F~1,3 + ... + F~1,N (1.3)
Principle of superposition
N
X
F~1 = F~1,j (1.4)
2
From the definitions of Coulomb’s Law, the force experienced at location of q0 (point
P)
1 q0 qi
F~0i = 2
r̂0i (1.6)
4πε0 r12
where r̂0i is the unit vector along the direction from charge qi to q0 ,
r̂0i = Unit vector from charge qi to point P = r̂i (radial unit vector from qi )
Recall E~ = limq0 →0 F~ E-field due to qi at point P:
q0
~i = 1 qi
E r̂i (1.7)
4πε0 ri2
where ~ri = Vector pointing from qi to point P, thus
r̂i = Unit vector pointing from qi to point P
Note:
(1) E-field is a vector.
(2) Direction of E-field depends on both position of P and sign of qi .
Moment
p~ = q d~ = qddˆ
(1.9)
p = qd
~ due to dipole along x-axis. Consider point P at distance x along the perpen-
Example: E
1 p
E=2 d
(1.12)
4πε0 (( 2 ) + x2 )3/2
2
p = qd
Special case: When x À d
(( d2 )2 + x2 )3/2 = x3 [1 + ( 2x
d 2 3/2
)]
1
• Compare with r2
E-field for single charge
• Result also valid for point P along any axis with respect to dipole
(1) In many cases, we can take advantage of the symmetry of the system to simplify the
integral.
(2) To write down the small charge element dq
1-D dq = λds, λ = linear charge density, ds = small length element
2-D dq = σdA, σ = surface charge density, dA = small area element
3-D dq = ρdV , ρ = volume charge density, dV = small volume element
along x-direction
1 λL λ
2. L À x : E ' 4πε0 x L
= 2πε0 x
2
Note: Here in this case, θ, R and r are fixed as Φ varies! BUT we want to convert r, θ to
R, z. Z
1 λRz 2π
E= dΦ
4πε0 r3 0
Z
1 λ(2πR)z
E = dE = (1.20)
4πε0 (z 2 + R2 )3/2
along z-axis
BUT: λ(2πR) = total charge on the ring
of ring dq = σ(2πrdr)
Z Z R Z R
1 2πσrdr · z 1 rdr
E = dE = 2 2 3/2
= 2πσz 2 (1.21)
4πε0 0 (z + r ) 4πε0 0 (z + r2 )3/2
• Change of variable: u = z 2 + r2 ⇒ (z 2 + r2 )3/2 = u3/2
du = 2rdr ⇒ rdr = 21 du
~ À |m~g |,
Vertical motion: |q E|
q is negative, Net force =-qE = ma (Newton’s 2nd Law)
qE
a=− (1.25)
m
Vertical distance travelled:
1
y = at2 (1.26)
2
• Dipole moment: p~ = q d~
• Force due to the E-field on +ve and −ve charge are equal and opposite in direction.
Total external force on dipole = 0.
BUT: There is an external torque on the center of the dipole.
Energy Consideration:
When the dipole p~ rotates of dθ, the E-field does work.
Work done by external E-field on the dipole:
dW = −τ dθ (1.27)
set U (θ = 90) = 0,
0 = −pE cos 90 + U0 ⇒ U0 = 0
Potential energy:
~
U = −pE cos θ = −~p · E (1.31)
~ is not uniform. dA
and surface, direction of the area vector A ~ = Area vector for small
area element dA
Electric flux
~ · dA
dΦE = E ~ (2.1)
~ through surface S:
Electric flux of E
Z
ΦE = ~ · dA
E ~ (2.2)
S
R
S
= Surface integral over surface S = Integration of integral over all area elements on
surface S
~ = 1 −2q 1 q
E 2
r̂ = − r̂
4πε0 R 2πε0 R2
~ = dAr̂
For a hemisphere, dA
Z Z
q q q
ΦE = − 2
r̂ · (dAr̂) = − dA = −
S 2πε0 R 2πε0 R2 S ε0
~ goes from inside to outside of closed surface S.
Recall: Direction of area vector dA
Electric flux over closed surface S:
I
ΦE = ~ · dA
E ~ (2.3)
S
~ = 1 q 1 q
E 2
r̂ = r̂
4πε0 r 4πε0 R2
at the surface
Again, dA~ = dA~r
Z Z
q q
ΦE = 2
r̂ · (dA~r) = dA
S 4πε0 R 4πε0 R2 S
2
Total surface area of S = 4πR
q
ΦE =
ε0
IMPORTANT POINT: If we remove the spherical symmetry of closed surface S, the
total number of E-field lines crossing the surface remains the same.
The electric flux ΦE I I
ΦE = ~ · dA
E ~= E ~= q
~ · dA (2.4)
S S0 ε0
2.2 Gauss’Law
I
ΦE = E ~= q
~ · dA (2.5)
S ε0
for any closed surface S
And q is the net electric charge enclosed in closed surface S.
• Gauss’Law is valid for all charge distributions and all closed surfaces. (Gaussian
surfaces)
• For system with high order of symmetry, E-field can be easily determined if we
construct Gaussian surfaces with the same symmetry and applies Gauss’Law
λ
E=
2πrε0
Z Z
E dA + E dA = 2EA
S2 S3
Aσ σ
2EA = ⇒E=
ε0 2ε0
Total charge = Q
Spherical symmetry.
(a) Gauss’Law: I
~= Q
~ · dA
E
S ε0
I
Q
E dA =
S ε0
surface area of S = 4πr2
Q
E=
4πε0 r2
q volume enclosed by S’
(b) Q
= Total volume of S
4
q πr3 r3
= 43 3 ⇒ q = 3 Q
Q 3
πR R
Gauss’Law: I 3
~ = q = Qr
~ · dA
E
S ε0 ε0 R 3
surface area of S 0 = 4πr2
Qr
E= f or r≤R
4πε0 R3
Z Z
~ · dA
E ~=E ~ k dA)
dA(E ~ = EA
S2 S2
σA
Gauss’Law ⇒ EA = ε0
σ
On conductor’s surface E = ε0
Z
~ · dA
E ~ = 0 no charge inside
S2
⇒ E = 0 everywhere
Electric Potential
dW = F~ · d~s (3.1)
Total work done W by force F~ in moving the particle from Point 1 to Point 2
Z 2
W = F~ · d~s (3.2)
1
R2
1
= Path Integral= Integration over Path A from Point 1 to Point 2.
3.1.2 Convention
We define potential energy U such that
Z Z 2
dU = −W = − F~ · d~s (3.3)
1
Z 2 Z 2 Z 2
1 q1 q2
U2 − U1 = − F~ · d~r = − F dr = − dr
1 1 1 4πε0 r2
Z 2
q1 q2 1 q1 q2 1 1
−∆W = ∆U = 2
dr = ( − )
4πε0 1 r 4πε0 r2 r1
Note:
(1) This result is generally true for 2-D or 3-D motion.
(2) If q2 moves away from q1 , then r2 > r1 , we have
• If q1 , q2 are of same sign, then ∆U < 0, ∆W > 0 (∆W = Work done by electric
repulsive force)
E = K + U = Constant
∆E = ∆K + ∆U = 0 (3.6)
3.2.1 DEFINITION
We define electric potential V so that
∆U ∆W
∆V = =− (3.7)
q0 q0
(∆V is the P.E. per unit charge)
1 q
• For a single point charge: V(r) = 4πε0 r
For a total of N point charges, the potential V at any point P can be derived from the
principle of superposition.
1 q1
Recall that potential due to q1 at point P: V1 = 4πε0 r1
d
Consider the potential of point P at distance x > 2
from dipole.
1 +q −q
V = [ d
+ ]
4πε0 x − 2 x + d2
1 1 1 1 d
d
= d
' [1 ∓ ]
x± 2
x 1 ± 2x x 2x
1 q d d p
V = [1 + − (1 − )] = (Recall p = qd) (3.9)
4πε0 x 2x 2x 4πε0 x2
1
For a point charge E ∝ r2
, V ∝ 1r
1
For a dipole E ∝ r3
, V ∝ r12
1
For a quadrupole E ∝ r4
, V ∝ r13
Q
LIMITING CASE: z À R ⇒ V = 4πε0 |z|
Using the principle of superposition, we will find the potential of a disk of uniform
charge density by integrating the potential of concentric rings.
Z Z 2π
1 dq
V = dV =
disk 0 4πε0 r
Ring of radius x: dq = σdA = σ(2πxdx)
Z Z R Z R
1 σ(2πxdx) σ d(x2 + z 2 ) σ √ 2
V = dV = √ = √ dx = ( R + z 2 − |z|)
disk 0 4πε 0 2
x +z 2 4ε 0 0 2
x +z 2 2ε 0
Limiting Case:
1. If |z| À R
√ R2 1/2 1 R2
R2 + z 2 = |z|(1 + ) ' |z|(1 + )
z2 2 z2
At large z,
σ R2 Q
V ' = (like a point charge)
2ε0 2|z| 4πε0 |z|
where Q = total charge on disk = σπR2
2. If |z| ¿ R
√ z 2 1/2 1 z2
x2 + z 2 = R(1 + ) ' R(1 + )
R2 2 R2
σ z2
V ' (R − |z| − )
2ε0 2R
σR
At z = 0,V = 2ε0
; Let’s call this V0
σ z2 σR |z| z2
V (z) = (R − |z| + 2 ) = (1 − − )
2ε0 R 2ε0 R 2R2
The key here is that it is the difference between potentials of two points that is
important.
⇒ A convenience reference point to compare in this example is the potential of the
charged disk.
The important quantity here is
|z| z2
V (z) − V0 = − V0 − V0
R 2R2
Since z ¿ R, V (z) − V0 is approximated as
|z|
V (z) − V0 = − V0
R
Note: The integral on the right hand side of the above can be calculated along any path
from point 1 to 2. (Path-Independent)
Convention: V∞ = 0 Z P
VP = − ~ · d~s
E (3.13)
∞
∆U = q0 ∆V = −W
q0 ∆V = −q0 Es ∆s (3.14)
∆V
Es = − (3.15)
∆s
For infinitesimal ∆s,
dV
Es = − (3.16)
ds
Dr DJOB Physics for engineering I
3.3 Relation Between Electric Field E and Electric Potential V 36
Note:
(1) Therefore the E-field component along any direction is the negative derivative of the
potential along the same direction.
~ then ∆V = 0
(2) If d~s ⊥ E,
~
(3) ∆V is biggest/smallest if d~s k E
Generally, for a potential V(x,y,z), the relation between E(x,y,z) and V is
∂V ∂V ∂V
Ex = − Ey = − Ez = −
∂x ∂y ∂z
∂
, ∂ , ∂ are partial derivatives
∂x ∂y ∂z
∂
For ∂x V (x, y, z), everything y, z are treated like a constant and we only take derivative
with respect to x.
Example: If V (x, y, z) = x2 y − z
∂V
∂x
= 2xy
∂V
∂y
= x2
∂V
∂z
= −1
Example: Uniformly charged disk
σ
√
From potential calculations: V (z) = 2ε0
( R2 + z 2 − |z|) for a point along the z-axis
For z > 0, |z|= z
∂V σ z
Ez = − =− [1 − √ ]
∂z 2ε0 R2 + z 2
Example: Uniform electric field (e.g. Uniformly charged +ve and −ve plates)
Consider a path going from the −ve plate to the +ve plate
Potential at point P, VP can be deduced from definition. i.e.
q σ
Figure 3.1: Examples of equipotential surfaces. (a): V = 4πε0 r and (b): V = V0 − 2ε0 |z|
dQ
i= (4.1)
dt
4.1.1 Convention
(1) Direction of current is the direction of flow of positive charge.
(2) Current is NOT a vector, but the current density is a vector.
~j = charge flow per unit time per unit area
Z
i= ~
~j · dA (4.2)
where q is charge of the current carrier, n is density of charge carrier per unit volume
Current:
dQ
= nqAvd
dt
Current Density:
j = nq v~d (4.4)
Note : For metal, the charge carriers are the free electrons inside.
~j = −nev~d (4.5)
for metals
Inside metals, ~j and v~d are in opposite directions.
~
~j = σ E (4.6)
Note : In general, σ is NOT a constant number, but rather a function of position and
applied E-field. A more commonly used property, resistivity (ρ), is defined as
1
ρ= (4.7)
σ
~ = ρ~j
E (4.8)
ρ = ρ0 [1 − α(T − T0 )] (4.10)
∆U ∆Q
= (V2 − V1 )
∆t ∆t
Joule’s heating
P = i∆V = power dissipated in conductor
For a resistor R,
2 (∆V )2
P =i R=
R