Lab Practice-2 Transistor char & DC biasing

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Addis Ababa Science and Technology University

College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory

Experiment 3: Characteristics of BJT


Component:
 Resistor, Transistor

Measurement and power source


 DC Power supply, Multimeter

Objective:
The objective of this exercise is to explore the operation of a basic common emitter biasing configuration
for bipolar junction transistors, namely base bias. Along with the general operation of the transistor and
the circuit itself, circuit stability with changes in beta is also examined.

Theory Overview
For a bipolar junction transistor to operate properly, the base-emitter junction must be forward biased
while the collector-base junction must be reverse biased. This will place VBE at approximately .7 volts and
the collector current IC will be equal to the base current IB times the current gain β. For small signal
devices, the current gain is greater than 100 typically. Thus, IC>>IB and IC≈IE.

The common emitter configuration places the emitter terminal at ground. The base terminal is seen as
the input and the collector as the output. Using a variable base supply, the base current is dependent on
the value of the base resistor via Ohm’s law. Consequently, any variation in current gain across a batch of
transistors will show up as an equivalent variation in collector current, and by extension, a variation in
collector-emitter voltage VCE.

Connect Variable Voltage


across Vbb

Figure 1: Transistor Characteristics

Procedure:

1- Collect required components from your instructor


2- Sample Vbb from variable voltage, set VCC to fixed 15 Volt.
3- Assume Rb=1kΩ and RC=1kΩ
4- Connect the circuit as shown in Figure 1
5- Following the voltage across table 1, vary your voltage across Base Vbb
6- Record the voltage across VBE, VCE,
7- Replace your Rb by 4.7kΩ and repeat procedure 4 up to 6
8- Replace your Rb by 10kΩ and repeat procedure 4 up to 6
Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory
No Name Id Section
1

2
3
4
5
6
7
8

Table 1: Characteristics of Transistor

Vbb VBE(V), VCE(V) VBE(V), VCE(V) VBE(V), VCE(V) Operating mode?


(V) @1kΩ @1kΩ @4.7kΩ @4.7kΩ @10kΩ @10kΩ

0.25

0.5

0.7

10

12
Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory
Experiment 4: DC Biasing Circuits
Fixed-Biasing
The circuit shown in figure 2 is one of the basic transistor biasing methods, called Fixed-biasing. Where in
this case Q-point of the base is controlled by RB,

Figure 2: base-biased circuit

Procedure:

1- For ICQ= 2 mA VCC= 15V VBE(ON)=0.7V VCEQ= 5V and β= 180, calculate RB, and RC
2- Collect your calculated resistor and the rest of the components, show all your steps clearly on the
provided space: Discussion_2
3- Connect the circuit as shown in Figure 2,
4- Measure the voltage across RB, RC, and VCEQ, record them in table 2
a. Discuss the operating mode of the transistor based on the value across procedure
b. Discuss your observation versus measured value on Discussion_1 provided space
5- Calculate the current across Base and collector, record them in table 2

Figure 3: Common Emitter

6- Set an input signal from function generator


a. A sine wave signal with a frequency of 50Hz and peak voltage of 600mV
7- Observe your input signal in oscilloscope,
a. Measure your peak to peak and frequency
8- Design your circuit as shown in figure 3, use the same value of RB, RC and VCC as above
a. Connect input signal from function generator to your circuit
9- Display your input and output in oscilloscope
a. Record it in you discussion_3 space,
b. Analyze the relation between input at base and output at collector
c. Draw the signal across input signal and output signal
d. Calculate the gain of the circuit
Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory
VRB VRC VCE IB IC

Table 2: results and calculated value

Discussion_2: Show all your steps clearly here, discuss your observation
Addis Ababa Science and Technology University
College of Engineering
Department of Electrical & Computer Engineering
Applied Electronics I Laboratory
Discussion_3: Show all your steps clearly here, discuss your observation

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