COURSE : 252435 POWER ELECTRONICS

CHAPTER 2
Overview of Power Semiconductor Switches

Prof. Dr. Yuttana Kumsuwan

Department of Electrical Engineering
Faculty of Engineering, Chiang Mai University

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 Chapter 2: Overview of Power Semiconductor Switches
Purposes
• To understand the operation characteristics of power semiconductor
switches used in power electronics
• To describe principles of operation in each type of power semiconductor
switches
• To distinguish between power semiconductor switches controlled by a
current signal and a voltage signal
• To explain turn-on and turn-off time intervals of power switching devices
• To explain power losses on power switching devices

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 Chapter 2: Overview of Power Semiconductor Switches
Contents
2.1 Introduction
2.2 Diodes
2.3 Thyristors
2.4 Desired Characteristics in Controllable Switches
2.5 Bipolar Junction Transistors
2.6 MOSFET
2.7 GTO
2.8 IGBT
2.9 MCT
2.10 Comparison of Controllable Switches
2.11 Drive and Snubber Circuit
2.12 Justification for Using Idealized Device Characteristics
2.13 Problems
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 Chapter 2: Overview of Power Semiconductor Switches

2.1 Introduction
Power Loss = Switching Loss + Conduction Loss

Diodes
Classification On and off states controlled by the power circuit
of
power
semiconductor
devices
Latched by a control signal but must be turned off by
Thyristors the power circuit

Controllable
switches
Turned on and turn off by control signals: BJT, MOSFET, GTO, IGBT, MCT

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 Chapter 2: Overview of Power Semiconductor Switches

2.2 Diodes
iD iD

iD I
Vrated
A K vD vD


0 VF ( I ) 0
+ vD −
Reverse
Blocking
(a) Region

(b) (c)
Figure 2-1 Diode: (a) symbol, (b) i-v characteristic, (c) idealized characteristic.

• The switch turns on when the diode is forward-bias, which measures the voltage of the anode (A) relative to the cathode (K)
=> The diode current flows from A to K (iD > 0) .
• The switch turns off when the diode is reverse-bias in which the voltage across A and K is lower than 0 (vAK < 0) .
• The reverse-bias voltage should not reach the breakdown rating.
• The power rating is considered from current and voltage, ex. iD = 10A-6kA and vAK = 50V-6.5kV.
• Applications: single-phase and three-phase AC-DC converters.

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 Chapter 2: Overview of Power Semiconductor Switches

2.2 Diodes

4500V/800A press pack and 1700V/1200A module diodes

Figure 2-2 Practical structure of power diodes.

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 Chapter 2: Overview of Power Semiconductor Switches

2.3 Thyristors
iA iA
A On-state

Anode current iA Off-to-on On-state

If ig pulse is

+
applied
I
v AK Reverse Reverse
blocking Off-to-on
G −
breakdown
region
Off
state
iG v AK v AK



0
Gate current Reverse
0 VF ( I )
Forward Reverse Forward
breakdown Breakdown breakdown Breakdown
K voltage voltage
voltage voltage

(a) (b) (c)

Figure 2-3 Thyristor: (a) symbol, (b) i-v characteristic, (c) idealized characteristic.

• Silicon Controlled Rectifier (SCR).

• The switch turns on when the gate current is positive value (iG > 0).
• The switch turns off when the voltage across A and K is lower than 0 (vAK < 0) and the anode current becomes zero (iA = 0)
longer than a turn-off time interval (toff ) of vAK.
• The power rating is considered from current, voltage, and frequency, ex. iA = 10A-6kA, vAK = 50V-6.5kV, f is up to 500 Hz.
• Applications: single-phase and three-phase AC-DC converters.

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 Chapter 2: Overview of Power Semiconductor Switches

2.3 Thyristors
Characteristics of an SCR in conditions of An example of a turn-on and turn-off
various gate currents interval process
iA iG

0.1I GM I GM
t
iA
Forward blocking iA
region 0.9 I D t rr iG v AK
ig3>ig2>ig1
ID
0.1I D
t
ig5 ig4 ig3 ig2 ig1 ig=0 0.1I rr
Max reverse v AK I rr
Latching current Qrr
voltage
Holding current
−vAK Forward vAK VD
breakover voltage 0.1VD Von
Reverse
Reverse blocking t
avalanche region
region t don tr
ton
toff

Figure 2-4 Characteristics of an SCR. Figure 2-5 The time interval of an SCR.

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 Chapter 2: Overview of Power Semiconductor Switches

2.3 Thyristors
An example: detail of an SCR characteristic

12000V/1500A SCR Thyristor

Maximum V DRM V RRM I TAVM I TRMS -
Rating 12000V 12000V 1500A 2360A -
Turn-on Turn-off
Switching diT /dt dv T /dt Q rr
Time Time
Characteristics
t on = 14  s t off = 1200 s 100 A /  s 2000V /  s 7000 C

V DRM – Repetitive peak off-state voltage V RRM – Repetitive peak reverse voltage
I TAVM – Maximum average on-state current I RRMS – Maximum rms on-state current
t rr I rr
Qrr = – Reverse recovery Charge Part number – FT1500AU-240 (Mitsubishi)
2

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 Chapter 2: Overview of Power Semiconductor Switches

2.3 Thyristors

4500V/800A and 4500V/1500A SCRs

Figure 2-6 Practical structure of SCRs.

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 Chapter 2: Overview of Power Semiconductor Switches

2.4 Desired Characteristics in Controllable Switches

Several types of semiconductor power devices including BJTs, MOSFETs, GTOs, IGBTs, and MCTs can be
turned on and off by control signals applied to the control terminal of the device, which is called “Controllable Switches”
vsw
(b) Voff
Switch turn on Switch turn off
isw isw isw Von
t
+

+
isw
vsw vsw vsw Ion
− − −

Ioff
t
(a) isw = Ion , vsw = Von isw = Ioff , vsw = Voff p(t)

t
Figure 2-7 A controllable switch: (a) generic controllable switch, (b) idealized operation.
The ideal operation of controllable switching characteristics
• When the controllable switch turns off, it blocks arbitrarily large forward and reverse voltage with zero current flow (isw = 0).
• When the controllable switch turns on, it conducts arbitrarily large current (depends on rated power) with zero voltage drop
(vsw = 0).
• The controllable switch can switch from on to off or vice versa instantaneously when triggered.
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 Chapter 2: Overview of Power Semiconductor Switches

2.4 Desired Characteristics in Controllable Switches

Power Loss
❑ Conduction Loss
Occurs when switches turn on (Forward Conduction), which varies with their voltage or current magnitude.
• Forward voltage drop and Conduction Current determine Conduction Power Loss.
• Conduction Loss is a part of the main power loss of the switches (always happens), which happens in low-
frequency feature.

❑ Switching Loss
Energy is transformed into the heat on the switches, which occurs when the switches are turned on and
turned off. The switching loss depends on switching frequency that is high switching frequency, high
switching loss.
• Instantaneous voltage and current.
• Instantaneous power loss.

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 Chapter 2: Overview of Power Semiconductor Switches

2.4 Desired Characteristics in Controllable Switches

Power Loss CLICK TO PLAY VIDEO

Ref. https://www.youtube.com/watch?v=eveZ3OeIsP0&ab_channel=JessicaBoles
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 Chapter 2: Overview of Power Semiconductor Switches

2.4 Desired Characteristics in Controllable Switches

Average Power Loss ❖ Average power loss for 1 switching period:
vsw
1 Ts
Voff
Forward voltage drop
PT ( loss ) =
Ts 
0
vswiswdt = Pcond ( loss ) + Psw( loss ) (2.1)

Von
isw
t
❖ Average switching loss:
Ion 1  tc(on ) ton 
Psw( loss ) =   vswisw dt +  vswisw dt  (2.2)
Ts  0 ton −tc( off )

Ioff Leakage current
t on switching loss off switching loss
p(t) Conduction
losses
Pmax Switching
❖ Average conduction loss:
t − t (
+ tc( off ) )
losses
1  ton −tc ( off )  c( on )
 + Von I off toff
Voff I on dt +  Von I off dt  = Voff I on 
Pmin Ts
Pcond ( loss ) =  
on
t
tc(on) tc(off) Ts  tc( on ) ton
  Ts  Ts
ton toff  
Ts
1 Negligibly small when
Figure 2-8 power loss characteristics of a practical switch.  (Voff I onton + Von I off toff ) (2.3)
Ts compares to Ts
tc(on) = Turn-on switching crossover interval
tc(off) = Turn-off switching crossover interval on conduction loss off conduction loss
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2.4 Desired Characteristics in Controllable Switches

Power Loss under Various Loads
isw Inductive load

Voff Voff Voff ON (2)

Ion
(1)
Ion Ion Ion

Voff I on Ideal Resistive load

Voff I on
4 (3)
OFF
Ts Ts Ts vsw
(1) (2) (3)
Voff

Figure 2-9 Waveforms of voltage, current, power loss of switches, and power loss characteristics in conditions of various loads,
(1) resisters, (2) inductors, and (3) idealized loads.

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 Chapter 2: Overview of Power Semiconductor Switches

2.4 Desired Characteristics in Controllable Switches

An Example of Power Loss on Resistive Load Switch control
signal Switch Switch
Ideal turn on turn off
Io
on
Vd isw 0 t
off

+
vsw
ton toff
−

vsw,isw Ts
Switch turn on (a) Switch turn off (b)
Vd
Io
Ideal Ideal Von
Io Io
0 t
Vd isw Vd tri tfi
isw td(on) td(off)
+

tfv trv

+
vsw vsw tc(on) tc(off)
− −
p(t)

isw = Io , vsw = Von isw = 0 , vsw = Vd

(c) Vd I o

• The current flows through the switch. • The current flows through the diode. 4 Won
t
• The diode is reverse biased. • The input appears across the switch. 1
Wc( on )  Vd I otc( on ) Wc( off )
1
 Vd I otc( off )
6 6

Figure 2-10 Generic-switch switching characteristics (linearized): (a) simplified clamped-resistive-switching circuit, (b) switch waveforms,
(c) instantaneous switch power loss.
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2.4 Desired Characteristics in Controllable Switches

An Example of Power Loss on Inductive Energy Storage
Switch control Switch
signal
Switch
Ideal
Io turn on turn off
Vd isw on

+
0 t
vsw off
−
ton toff
(a) (b) vsw,isw Ts
Switch turn on Switch turn off
Vd
Ideal Ideal Io
Io Io Von
Vd isw Vd isw
0 t

+
+

td(on) td(off)
vsw vsw tri tfv trv tfi
− −
p(t) tc(on) tc(off)

isw = Io , vsw = Von isw = 0 , vsw = Vd

(c) VdIo
• The current flows through the switch. • The current flows through the diode. Won
• The diode is reverse biased. • The input appears across the switch. t
1 1
Wc( on )  Vd I otc( on ) Wc( off )  Vd I otc( off )
2 2

Figure 2-11 Generic-switch switching characteristics (linearized): (a) simplified clamped-inductive-switching circuit, (b) switch waveforms,
(c) instantaneous switch power loss.
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2.4 Desired Characteristics in Controllable Switches

Switching Loss Calculation
p(t) Regarding this graph, vsw and isw are related to the switching
1 1
Wc( on )  Vd I otc( on )  Vd I otc( off )
VdIo 2
Wc( off )
2 frequency during turn-on and turn-off, where Ts is the switching
time period. The power loss on the switch can be calculated as
Won
t
follows;
Ts
tri tfv trv tfi
Energy: W = v ( t ) i ( t )dt
tc(on) tc(off) 
0
(2.4)
ton toff
Ts

❖ During the turn-on crossover interval: tc (on) = tri + t fv (2.5)

 Energy dissipated in the device: 1

Wc( on ) = Vd I otc (on) (2.6) tri is the current rise time
2 tfv is the voltage fall time
❖ During the turn-off crossover interval: tc (off ) = trv + t fi (2.7) trv is the voltage rise time
tfi is the current fall time

 Energy dissipated in the device: 1 Wc(on) is the energy dissipated during the turn-on crossover interval
Wc( off ) = Vd I otc (off ) (2.8) Wc(off) is the energy dissipated during the turn-off crossover interval
2
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2.4 Desired Characteristics in Controllable Switches

Switching Loss Calculation
W
Average power : Pavg =
T
Wc( on ) + Wc( off ) Vd I otc (on) + Vd I otc (off )
Average switching power loss : Psw( loss ) = =
Ts 2Ts

Psw( loss ) = Vd I o f s ( tc (on) + tc (off ) )

1
 The switching power loss can be defined as (2.9)
2

Remarks
• The switching power loss varies with the switching frequency (fs).
• The high switching frequency directly affects high switching power loss.
• Due to the negligible effect of tc(on) and tc(off), the high switching frequency of power semiconductor
devices can be achieved, which applies in power converters.

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2.4 Desired Characteristics in Controllable Switches

Conduction Loss Calculation
p(t)
❖ During the turn-on interval
1 1
Wc( on )  Vd I otc( on ) Wc( off )  Vd I otc( off )
Vd Io 2 2  Energy dissipated in the device:
Won
t
Wcond = Won = Von I oton (2.10)

tri tfv trv tfi where

tc(on) tc(off) ton tc( on ) , tc( off )
ton toff
Ts
 The conduction power loss can be defined as
Won t
Pcond ( loss ) = = Von I o on (2.11)
Ts Ts
 The total power loss can be calculated as follows;

PT ( loss ) = Psw( loss ) + Pcond ( loss ) = Vd I o f s ( tc (on ) + tc (off ) ) + Von I o f ston

1
(2.12)
2

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2.4 Desired Characteristics in Controllable Switches

An Example of Power Loss Calculation
Determine the turn-on and turn-off times of a power switch during supply to a resistive load in accordance with this
figure. Calculate the switching power loss and conduction power loss in a switching frequency of 10 kHz, assuming
linear voltage and current characteristics and range operation = 0.5 (Duty cycle: D).

vsw isw Vd t I ot
Vd 300V Determine vsw = Vd − and isw =
200A Ts Ts
Io
on-state voltage: Von = 2.1V
Von
t At voltage and current Vd = 300V, Io = 200A
t=0 t
c(on) tc(off) and tc( on ) = 1 s, tc( off ) = 2  s
Ts

Solution: Consider the voltage and current waveforms on the switch during the turn-on and turn-off : tc(on)+tc(off)

So, the power loss is equal to Ts

 Vd t  I ot   t2 t3 
Ts Ts
 Vd I o 
W =  vswiswdt =   Vd −   dt = Vd o
I − 2 
=   Ts
0 0
T s  s 
T  s
2T 3T s 0  6 

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2.4 Desired Characteristics in Controllable Switches

An Example of Power Loss Calculation
• The energy dissipated during the switching:

V I   300V  200A 
  (1  10 ) = 0.01 J
−6
Wc( on ) =  d o  tc( on ) =  #
 6   6 
V I   300V  200A 
Wc( off ) =  d o  tc( off ) = 
 6   6


 ( 2  10 −6
) = 0.02 J #

• The switching power loss and the conduction power loss:

( )
Psw( loss ) = Wc( on ) + Wc( off ) f s = ( 0.01 + 0.02 )  10  103 = 300W #
Pcond ( loss ) = Von I o D = 2.1V  200A  0.5 = 210W #

• The total power loss:

PT ( loss ) = Psw( loss ) + Pcond ( loss ) = 300W+210W = 510W #

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2.5 Bipolar Junction Transistors

iC
Saturation(OFF-state) iB5
iC
C iC
iB + I
iB4

B vCE Active region

+v
iB3 Increasing

BE
− base current On
− E iB2
Types: NPN Cut-OFF(OFF-state) Off
iB1
(a) vCE vCE
0
vCE(sat) (b) (c)

Figure 2-12 A BJT: (a) symbol, (b) i-v characteristics, (c) idealized characteristics.

• Bipolar junction transistors (BJT)

• The switch turns on when the base current is positive value (iB > 0) and the voltage across C and E is on-state (vCE(sat)).
• The switch turns off when the base current is negative value (iB < 0).
• The power rating is considered from current, voltage, and frequency, ex. iC = 750A, vCE = 60V-1kV, f is up to 10 kHz.
• Applications: DC-AC converters and AC-DC converters.

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2.6 MOSFET
Drain (D) iD Triode
(linear region)
Saturation region
(active region) iD
vDS<vGS−VT vDS > vGS −VT

+ VGS increease
vDS (a)
On

Gate (G) −
+ VGS = VT+1
vGS
−
Off
Source (S) VGS  VT
vDS
N-Channel vDS 0
0 (b) (c)

Drain (D) Figure 2-13 N-channel: (a) symbol, (b) i-v characteristics, (c) idealized characteristics.

• Metal-oxide-semiconductor field effect transistors (MOSFET)

+
• N-channel
vDS => the switch turns on when the voltage signal between G and S is positive value (vGS > 0).
−
Gate (G)
+ • P-channel
vGS
− => the switch turns on when the voltage signal between G and S is negative value (vGS < 0).
Source (S) • The switch is controlled by a voltage signal.
• The power rating is considered from current, voltage, and frequency, ex. ID /VDS = 150A/1kV, f is up to 200kHz.
P-Channel
• Applications: DC-DC converters and DC-AC converters.
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2.7 GTO
iA iA
A
Anode current i
A Turn-off
On

+
Turn-on
Off-state Off
Gate current iG v AK v AK v AK



0 0
G −

(c)
K
(a) (b)
Figure 2-14 A GTO: (a) symbol, (b) i-v characteristics, (c) idealized characteristics.

• Gate Turn Off thyristor (GTO)

• The switch turns on when the gate current is positive value (iG > 0), which behaves like SCRs.
• The switch turns off when the gate current is negative value (iG < 0).
• The power rating is considered from current, voltage, and frequency, ex. iA = 10A-6kA, vAK = 50V-6kV,
f is up to 1 kHz.
• Applications: AC-DC converters (high-power rating).

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2.8 IGBT
iD VGE 5
iD
C iD D
VGE 4
+
G vDS VGE 3
+
On

vGE −
− G +
vGS − VGE 2 Off
E S vDS , vCE
0
VGE1
(a)
0 2V vCE , vDS
(b) (c)

Figure 2-15 An IGBT: (a) symbol, (b) i-v characteristics, (c) idealized characteristics.

• Insulated gate bipolar transistors (IGBT)

• The switch turns on when the voltage signal between G and E is positive value (vGE > 0).
• The switch turns off when the voltage signal between G and E is negative value (vGE < 0).
• The switch is controlled by a voltage signal.
• The power rating is considered from current, voltage, and frequency, ex. IC /VCE = 1200A/4.5kV, f is up to 20 kHz.
• Applications: DC-DC converters and DC-AC converters.

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2.8 IGBT
An example of a turn-on and turn-off
interval process An example: detail of an IGBT characteristic
vG
Maximum VCE IC I CM -
+15V
0 t Rating 3300V 1200A 2400A -
Switching t don tr t doff tf
vGE 90% Characteristics 0.35  s 0.27  s 1.7  s 0.2  s
+15V
Saturation
0 t I CE sat = 4.3V at I C = 1200 A
Voltage
C VCE - Rated collector-emitter voltage
iC
G
I C - Rated dc collector current
90%
+
vGE − I CM - Maximum repetitive peak collector current
E
10% Part number – FZ1200 R33 KF2 (Eupec)
0 t
tdon tr tdoff tf

Figure 2-16 The time interval of an IGBT.

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2.8 IGBT

1700V/1200A and 3300V/1200A IGBT modules

Figure 2-17 Practical structure of IGBTs.

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2.9 MCT
iA iA

Turn-on

On
Turn-off

v AK Off
v AK

(a)
(b) (c)
Figure 2-18 An MCT: (a) symbol, (b) i-v characteristics, (c) idealized characteristics.

• MOS-controlled thyristors (MCT)

• The switch turns on when the gate current is positive value (iG > 0), which behaves like GTOs.
• The switch turns off when the gate current is negative value (iG < 0).
• The switch is controlled by a voltage signal same as IGBTs and MOSFETs.
• The power rating is considered from current, voltage, and frequency, ex. iA = 50A-600A, vAK = 1.5kV-3kV, f is up
to 12 kHz.
• Applications: AC-DC converters and DC-AC converters (high-switching frequency).
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2.10 Comparison of Controllable Switches

Relative properties of controllable swithes

Device Power Capability Switching Speed
BJT Medium Medium
MOSFET Low Fast
GTO High Slow
IGBT Medium Medium
MCT Medium Medium

Figure 2-19 Relationship between rated power and current of controllable switches.

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2.10 Comparison of Controllable Switches

Diodes SCR/GTO MOSFET modules

IGBT Modules Rectifier diodes Phase control thyristor
Rectifier bridges Diode modules Thyristor/Diode modules

Figure 2-20 Applications of power switches.

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2.11 Drive and Snubber Circuit

❖ Reduce the electrical stress on a device.
❖ Reduce the switching stresses.
❖ Protect the overvoltage on a switch.

Without Snubber Circuit With Snubber Circuit

vsw RC snubber
vsw
L L
Vleakage Vleakage
isw Vd isw Vd
Rs
Vd

+
Vd
+

vsw vsw
−
− Cs

t t
Switch turn off Switch turn off

Figure 2-21 A switching circuit without RC snubber. Figure 2-22 A switching circuit with RC snubber.

▪ Limit voltages applied to devices during turn-off transients.

▪ Limit the rate of rise (dv/dt) of the voltage across devices
during switching turn-off.
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2.12 Justification for Using Idealized Device Characteristics

A

Uncontrollable Power diode

K

on control Reverse-blocking triode thyristor G

K

Current A

controlled Gate turn-off thyristor (GTO)

G
devices K
C

Bipolar junction transistor (BJT) B

Controllable E
D
on-off control Power metal-oxide-semiconductor field-effect
transistor (MOSFET) G
S

Voltage C

controlled Insulated-gate bipolar transistor

devices (IGBT) G
E
A

MOS-controlled thyristor (MCT) G

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 Chapter 2: Overview of Power Semiconductor Switches

2.13 Problems
1. The data sheets of a switching device specify the following switching times corresponding to the
linearized characteristics shown in Fig. 2-11b for clamped-inductive switching:

tri = 100 ns tfv = 50 ns trv = 100 ns tfi = 200 ns

Calculate and plot the switching power loss as a function of frequency in a range of 25-100 kHz,
assuming Vd = 300 V and Io = 4 A in the circuit of Fig. 2-11b.

Solution: Psw(loss) (Watts)

= Vd I o f s ( tc (on ) + tc (off ) ) ; tc (on) = tri + t fv ; tc (off ) = trv + t fi

1 30
Since Psw( loss )
2
20
1
Therefore, Psw( loss ) = (300)(4) f s (100 + 50 + 100 + 200 )  10 ;
−9

2 10
= 0.27  10−3 f s Watts
0
25 40 60 80 100
fs (kHz)

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 Chapter 2: Overview of Power Semiconductor Switches

2.13 Problems
2. Consider the resistive-switching circuit shown in Fig. P2-2. Vd = 300 V and fs = 100 kHz and R = 75 Ω,
so that the on-state current is the same as in Problem 1. Assume the switch turn-on time to be the sum of
tri and tfv in Problem 1. Similarly, assume the turn-off time to be the sum of trv and tfi .

Assuming linear voltage- and current-switching characteristics, plot the switch

R
voltage and current and the switch power loss as a function of time. Compare the
Vd isw
average power loss with that in Problem 1.
+

vsw
−

Figure P2-2.

Power Electronics Research Group, Chiang Mai University 35