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    Assignment 2 Microelectronics Devices to Circuits

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    Assignment 2 Microelectronics Devices to Circuits

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    Assignment 2 Microelectronics Devices to Circuits

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    23btrei003

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    Week 2: Assignment 2

    Q1: A bipolar junction transistor (BJT) operating in ______ region acts like an open circuit.
    a. Cut-off
    b. Saturation
    c. Forward Active
    d. Reverse Active
    Ans: (a) Cut-off
    Q2: The slope of DC load line of a BJT is given by ______.
    a. −1/𝑅𝐶
    b. −1/𝑅𝐵
    c. −1/𝑅𝐸
    d. −1/𝑉𝐶𝐶
    Ans: (a) −1/𝑅𝐶
    Q3: The phase difference between the input and output voltages of a BJT connected in common
    emitter arrangement is ________________.
    a. 0°
    b. 90 °
    c. 180°
    d. 270°
    Ans: (c) 180°
    Q4: The function of RC in a CE amplifier is ______________.
    a. Provide supply voltage to the BJT
    b. Convert collector current (IC) to an output voltage (VOUT)
    c. Keep the transistor ON
    d. Keep the transistor in saturation mode
    Ans: (b) Convert collector current (IC) to an output voltage (VOUT)
    Q5: For the circuit shown below, Find IB, IC, IE. Consider VBE = 0.68 V, β=75, RB=60Ω, RC = 2KΩ,
    RE=1 KΩ

    a. IB = 8.94µA; IC = 670.5µA; IE = 679.44µA


    b. IB = 17.35µA; IC = 1301.25µA; IE = 1318.6µA
    c. IB = 4.34µA; IC = 340.5µA; IE = 359.44µA
    d. IB = 34.6µA; IC = 2600.75µA; IE = 2100.64µA
    Ans: (b) IB = 17.35µA; IC = 1301.25µA; IE = 1318.6µA
    Q6: By how much would the collector current of a BJT change, if its base current is changes by 0.06
    mA? Consider 𝛽 = 100.
    a. 6 mA
    b. 0.6 mA
    c. 60 mA
    d. 100 mA
    Ans: (a) 6mA
    Q7: One drawback of Ebers-moll model is ________________.
    a. It neglects Base width modulation of a BJT.
    b. It only accounts for voltages of a BJT
    c. It only accounts for currents of a BJT
    d. It cannot be applied to a BJT operating in saturation.
    Ans: (a) It neglects Base width modulation of a BJT.
    Q8: A CE amplifier has a collector current of 10 mA. When its base current is 100 μA, its input
    resistance is approximately equal to_______. Consider thermal voltage VT = 25 mV
    a. 250 Ω
    b. 500 Ω
    c. 1 kΩ
    d. 2 kΩ
    Ans: (a) 250 Ω
    Q9: In the figure below, find the minimum base current (IB) required to drive the transistor in the
    figure to saturation. Consider VCEsat = 0.3 V and β = 75, RC = 5 KΩ, VCC = 5V

    a. 10.53 µA
    b. 11.53 µA
    c. 12.53 µA
    d. 13.53 µA
    Ans: (c) 12.53 µA
    Q10: Ebers Moll model is a ____ frequency model based on the fact that BJT is composed of ____.
    a. High; two p-n junctions
    b. Low; two p-n junctions
    c. High; MOSFETs
    d. Low; MOSFETs
    Ans: (b) Low; two p-n junctions

    Week 2: Assignment 2: Brief Explanation


    Q1. Explanation:
    In cut off region, both emitter to base and base to collector junction is in the reverse bias and no
    current flows through the transistor. The transistor acts as an open switch.
    Q2. Explanation:
    The slope of DC load line of a BJT is given by -1/RC.

    VCE= VCC − ICRC; IC = −(1/RC)VCE + VCC/RC


    Q3. Explanation:
    For a CE inverter, as VIN increases, IC also increases. As VOUT = VCC−ICRC, Increase in IC decreases
    VOUT. Thus phase difference between input and output is 180°.
    Q4. Explanation:
    As VOUT = VCC − ICRC. RC converts IC to VOUT.
    Q5. Explanation:
    Given, VBE = 0.68 V, β=75, RB=60Ω, RC = 2KΩ, RE=1KΩ
    Using KCL, VIN – IBRB – VBE – IERE = 0

    IBRB + VBE + IB(β+1) RE = VIN


    IB (RB+βRE+RE) = VIN – VBE
    IB = (VIN – VBE)/(RB + βRE + RE)
    IB = (2 – 0.68) / (60+75×1000+1000) = 17.35 µA
    IC = βIB = 75×17.35µA = 1301.25 µA
    IE = (β+1) IB = 17.35µA × (75+1) = 1318.6µA

    Q6. Explanation:
    Δ𝐼𝐶
    𝛽=
    Δ𝐼𝐵
    Δ𝐼𝐶 = 𝛽 × Δ𝐼𝐵 = 100 × 0.06 𝑚𝐴 = 6𝑚𝐴
    Q7. Explanation:
    Ebers-moll model neglects base width effect of a BJT
    Q8. Explanation:
    For a common-emitter configuration, the input resistance (RIN) = VT/IB = (25 × 10−3) / (100 × 10−6)
    = 250 Ω.
    Q9. Explanation:
    IC = (5 − 0.3) / 5K = 0.94 mA
    IB = IC/β = 0.94/75 = 12.53 µA
    Q10. Explanation:
    Ebers Moll model is a low frequency (static) model based on the fact that BJT is composed of two pn
    junctions; EB and CB junctions.

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