ME444_Chapter 1-Fall 2024-Spring 2025
ME444_Chapter 1-Fall 2024-Spring 2025
College of Engineering
Mechanical Engineering Department
Mechatronics 1
ME 444
ME 444: Mechatronics 1
Alciatore, D. G. and Histand, M. B., Introduction to Mechatronics and Measurement Systems, McGraw Hill, 2003.
This course introduces the basic principles of mechatronics systems design . It also gives introdution to AC circuits, Introduction to
semiconductor, Introduction to ideal diodes, introduction to NPN and FET transistors, D/A and A/D convertors, Introduction to
Digital Circuits, Introduction to electrical motors, introduction to robotics.
prerequisites or co-requisites
indicate whether a required, elective, or selected elective (as per Table 5-1) course in the program
Explicitly indicate which of the student outcomes listed in Criterion 3 or any other
outcomes are addressed by the course.
SO(1) An ability to identify, formulate, and solve complex engineering problems by applying
principles of Mechanical engineering, science, and mathematics.
SO(8) An ability to demonstrate knowledge of concepts of Mechanical engineering and science.
Notes:
. Any student who misses an exam must provide an excuse from an authorized entity to justify their absence within
seven days of the exam.
. All reports must be submitted in Word format on Blackboard within one week of the practice session.
. All reports will be checked for integrity using SafeAssign on Blackboard.
. Any report submitted after the deadline or containing more than 30% plagiarism will receive a score of zero (0)
University of Tabuk
College of Engineering
Mechanical Engineering Department
Mechatronics 1
ME 444
Chapter 1
Basics for Mechatronics
Basics AC circuits, semiconductor, ideal
diodes, NPN and FET transistors
Alternating Current:
• An alternating voltage source periodically alternates or
reverses in polarity.
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More on resistors
Resistor color codes
1stband = 1stnumber
2nd band = 2nd number
3rdband = # of zeros / multiplier
4th band = tolerance
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Color code
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Variable resistor / Potentiometer
A potentiometer is avariable resistor. As you manually
turn a dial, the resistance changes.
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Units
Knowing your units is important!
Kilo and Mega are common in resistors
Milli, micro, nano and pico can be used in other
components
K(kilo) =1,000
M (mega) =1,000,000
M (milli) =1/1,000
u (micro) =1/1,000,000
n(nano) = 1/1,000,000,000 (one trillionth)
p (pico) = 1/ 1,000,000,000,000 (one quadrillionth)
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Ohm’s Law
• The amount of current in a circuit is dependent on its
resistance and the applied voltage. Specifically I = V/R
• Current I = V/R
• Voltage V = I*R
• Resistance R = V/I
Power:
• The unit of electrical power is the watt.
• P=VxI
• P = I² x R
• P = V² / R
Capacitors
A capacitor (originally known as a condenser) is a passive two-terminal electrical component used to
store energy electrostatically in an electric field. The forms of practical capacitors vary widely, but all
contain at least two electrical conductors (plates) separated by a dielectric (i.e., insulator).
Then the value of the capacitor consisting of two plates separated by air is calculated as 0.221nF, or 221pF.
Diode
A diode is a one way valve (or gate) for electricity. It is a component with an
asymmetrical transfer characteristic.
A diode has low (ideally zero) resistance in one direction, and high (ideally
infinite) resistance in the other direction.
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Light emitting diode(LED)
A light emitting diode (LED) is a semiconductor light source.
When electricity is passing through the diode, it emits light.
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forward bias
current
1. Calculate the forward bias current of a Si diode when forward bias voltage of 0.4V is applied, the reverse
saturation current is 1.17×10-9A and the thermal voltage is 25.2mV.
a) 9.156mA
b) 8.23mA
c) 1.256mA
d) 5.689mA
Answer
I=Is×(e(VD/ηVT)-1) where:
Is = reverse saturation current
η = non-ideality factor
VT = thermal voltage
VD = applied voltage
Since in this question ideality factor is not mentioned it can be taken as one.
Is = 1.17 x 10-9A, VT = 0.0252V, η = 1, V = 0.4V
Answer
VT = TK/11600
=B*A
Exercise
(H =A/m)
1T= Wb/m2
where: H = henry, kg = kilogram, m = metre, s = second, A = ampere, N = newton, C = coulomb, J = joule, T = tesla, Wb = weber, V
= volt, F = farad, Ω = ohm, Hz = hertz
Exercise
Exercise
R2 + R3 = Req
6 + 6 = 12 W
1/Rp = 1/R1 + 1/Req
1/Rp = 1/4+ 1/12
Rp = 3 W
Rt = 3 + 6 = 9 W
Exercise
Find ID
Transistors
A transistor is a semiconductor device used to
amplify and switch electronic signals and electrical power.
The Bipolar Transistor basic construction consists of two PN-junctions producing three connecting terminals with each terminal
being given a name to identify it from the other two. These three terminals are known and labelled as the Emitter ( E ), the Base
( B ) and the Collector ( C ) respectively.
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How a transistor works
A voltage or current applied to one pair of the
transistor’s terminals changes the current through
another pair of terminals.
A transistor is composed of semiconductor material
with at smallest three terminals for connection to an
external circuit.
Transistors have 3pins.
For these transistors:
Collector
Emitter
Base
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A transistor consists of two PN diodes connected back to back. It has three terminals namely emitter, base and
collector. The basic idea behind a transistor is that it lets you control the flow of current through one channel by
varying the intensity of a much smaller current that's flowing through a second channel.
In a PNP transistor, the base current which enters into the collector is
amplified. The flow of current is typically controlled by the base.
Current flows in the opposite direction in the base. In a PNP transistor,
the emitter emits “holes”, and these holes are collected by the collector.
Both NPN and PNP are bipolar junction transistors (BJTs). BJTs are current-controlled transistors that
allow for current amplification.
Electrons are the predominant current carriers in NPN transistors, while holes are the minor ones. In a
PNP transistor, holes carry the majority of the current, while electrons play a minor role.
The Electron flow from the Hole flow from the emitter
Current Direction
emitter to collector to collector
Solution :
Applying Kirchhoff ‘s voltage law to the base side and taking resistances in kΩ and currents in mA, we have,
NPN Transistor
A bipolar NPN transistor has a DC current gain, (Beta) value of 200.
Calculate the base current IB required to switch a resistive load of 4mA?
➔ Ic= 4 mA
NPN Transistor
An NPN Transistor has a DC base bias voltage, VB of 10v and an input base resistor, RB of 100kΩ.
Where VBE = 0.7 V
What will be the value of the base current into the transistor?
For a transistor, β = 45 and voltage drop across 1kΩ
which is connected in the collector circuit is 1 volt.
Find the base current for common emitter connection.
I
Determine VCB in the transistor circuit shown in Fig. The
transistor has β = 150.
PNP transistor
The circuit connection of PNP
transistor with supply voltages
is given below. Here the base
terminal has negative bias with
respect to emitter and the
emitter terminal has positive
bias voltage with respect to
both base and collector
because of PNP transistor.
Example:
Consider a PNP transistor, which is connected in the circuit with the supply voltages VB = 1.5V, VE = 2V,
+VCC = 10V and –VCC = -10V. And also this circuit connected with the resistors of RB = 200kΩ and RE = RC (or
RL) = 5kΩ. Now calculate the current gain values (α, β) of the PNP transistor.
Field-Effect Transistors
(FETs) are a class of transistors used in electronic circuits to control current flow.
They operate using an electric field to modulate the conductivity of a
semiconductor channel, making them critical components in amplifiers, switches,
and digital circuits.
Applications:
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Any Questions?