FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)

February 2016

FSGM0465R
Green-Mode Fairchild Power Switch (FPS™)

Features Description
 Soft Burst-Mode Operation for Low Standby Power The FSGM0465R is an integrated Pulse Width
Consumption and Low Noise Modulation (PWM) controller and SenseFET specifically
designed for offline Switch-Mode Power Supplies
 Precision Fixed Operating Frequency: 66kHz (SMPS) with minimal external components. The PWM
 Pulse-by-Pulse Current Limit controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout (UVLO), Leading-
 Various Protection Functions: Overload Protection Edge Blanking (LEB), optimized gate driver, internal
(OLP), Over-Voltage Protection (OVP), Abnormal soft-start, temperature-compensated precise current
Over-Current Protection (AOCP), Internal Thermal sources for loop compensation, and self-protection
Shutdown (TSD) with Hysteresis, Output-Short circuitry. Compared with a discrete MOSFET and PWM
Protection (OSP), and Under-Voltage Lockout controller solution, the FSGM series can reduce total
(UVLO) with Hysteresis cost, component count, size, and weight; while
 Auto-Restart Mode simultaneously increasing efficiency, productivity, and
system reliability. This device provides a basic platform
 Internal Startup Circuit suited for cost-effective design of a flyback converter.
 Internal High-Voltage SenseFET: 650V
 Built-in Soft-Start: 15ms Related Resources
 Fairchild Power Supply WebDesigner — Flyback
Applications Design & Simulation - In Minutes at No Expense
 Power Supply for LCD TV and Monitor, STB and DVD
Combination

Ordering Information
(2)
Output Power Table
Operating (3)
Current RDS(ON) 230VAC ± 15% 85-265VAC Replaces
Part Number Package Junction
Limit (Max.) (4) Open (4) Open Device
Temperature Adapter (5) Adapter (5)
Frame Frame
TO-220F
6-Lead(1) -40°C ~
FSGM0465RWDTU 1.80A 2.6 60W 70W 33W 48W FSDM0465RE
W- +125°C
Forming
TO-220F
(1) -40°C ~
FSGM0465RUDTU 6-Lead 1.80A 2.6 60W 70W 33W 48W FSDM0465RE
U-Forming
+125°C
TO-220F
(1) -40°C ~
FSGM0465RLDTU 6-Lead 1.80A 2.6 60W 70W 33W 48W FSDM0465RE
L-Forming
+125°C

Notes:
1. Pb-free package per JEDEC J-STD-020B.
2. The junction temperature can limit the maximum output power.
3. 230VAC or 100/115VAC with voltage doubler.
4. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature.
5. Maximum practical continuous power in an open-frame design at 50C ambient temperature.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Application Circuit
VO

AC
IN

VSTR
Drain

PWM
GND

FB VCC

Figure 1. Typical Application Circuit

Internal Block Diagram

N.C. VSTR VCC Drain
5 6 3 1

ICH

Vref
Vburst VCC good
0.5V / 0.7V 7.5V / 12V
Soft Burst

VCC Vref OSC

IDELAY IFB Soft Start

S Q
PWM
Gate
FB 4 R Q Driver
3R
R LEB(300ns)

tON<tOSP(1.2μs)

LPF 2 GND
VAOCP
VOSP

S Q
VSD TSD
6V
VCC good R Q
VCC

VOVP
24.5V

FSGM0465R
Figure 2. Internal Block Diagram

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 2
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Pin Configuration

6. VSTR
5. N.C.
4. FB
3. VCC
2. GND

1. Drain

FSGM0465R
Figure 3. Pin Configuration (Top View)

Pin Definitions
Pin # Name Description
1 Drain SenseFET Drain. High-voltage power SenseFET drain connection.
2 GND Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input, which provides the internal operating
3 VCC
current for both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor
4 FB
should be placed between this pin and GND. If the voltage of this pin reaches 6V, the
overload protection triggers, which shuts down the FPS.
5 N.C. No connection.
Startup. This pin is connected directly, or through a resistor, to the high-voltage DC link.
At startup, the internal high-voltage current source supplies internal bias and charges the
6 VSTR
external capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current
source (ICH) is disabled.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 3
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only.

Symbol Parameter Min. Max. Unit

VSTR VSTR Pin Voltage 650 V
VDS Drain Pin Voltage 650 V
VCC VCC Pin Voltage 26 V
VFB Feedback Pin Voltage -0.3 12.0 V
IDM Drain Current Pulsed 10 A

(6) TC=25C 5.0 A

IDS Continuous Switching Drain Current
TC=100C 3.2 A
(7)
EAS Single Pulsed Avalanche Energy 250 mJ
(8)
PD Total Power Dissipation(TC=25C) 45 W
Maximum Junction Temperature 150 C
TJ (9)
Operating Junction Temperature -40 +125 C
TSTG Storage Temperature -55 +150 C
(10)
VISO Minimum Isolation Voltage 2.5 kV

Electrostatic Human Body Model, JESD22-A114 2

ESD kV
Discharge Capability Charged Device Model, JESD22-C101 2
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.75)
and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
10. The voltage between the package back side and the lead is guaranteed.

IDS

DMAX
fSW

Figure 4. Repetitive Peak Switching Current

Thermal Impedance
TA=25°C unless otherwise specified.

Symbol Parameter Value Unit

(11)
θJA Junction-to-Ambient Thermal Impedance 62.5 °C/W
(12)
θJC Junction-to-Case Thermal Impedance 3 °C/W
Notes:
11. Infinite cooling condition (refer to the SEMI G30-88).
12. Free standing with no heat-sink under natural convection.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 4
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Electrical Characteristics
TJ = 25C unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

SenseFET Section
BVDSS Drain-Source Breakdown Voltage VCC = 0V, ID = 250A 650 V
IDSS Zero-Gate-Voltage Drain Current VDS = 520V, TA = 125C 250 A
RDS(ON) Drain-Source On-State Resistance VGS=10V, ID =1A 2.1 2.6 Ω
(13)
CISS Input Capacitance VDS = 25V, VGS = 0V,f=1MHz 436 pF
(13)
COSS Output Capacitance VDS = 25V, VGS = 0V,f=1MHz 65 pF
tr Rise Time VDS = 325V, ID = 4A, RG=25Ω 24 ns
tf Fall Time VDS = 325V, ID = 4A, RG=25Ω 24 ns
td(on) Turn-on Delay Time VDS = 325V, ID = 4A, RG=25Ω 13 ns
td(off) Turn-off Delay Time VDS = 325V, ID = 4A, RG=25Ω 30 ns
Control Section
fS Switching Frequency VCC = 14V, VFB = 4V, 60 66 72 kHz
(13)
fS Switching Frequency Variation -25C < TJ < +125C ±5 ±10 %
DMAX Maximum Duty Ratio VCC = 14V, VFB = 4V 65 70 75 %
DMIN Minimum Duty Ratio VCC = 14V, VFB = 0V 0 %
IFB Feedback Source Current VFB = 0 160 210 260 A
VSTART VFB = 0V, VCC Sweep 11 12 13 V
UVLO Threshold Voltage
VSTOP After Turn-on, VFB = 0V 7.0 7.5 8.0 V
VOP VCC Operating Range 13 23 V
tS/S Internal Soft-Start Time VSTR = 40V, VCC Sweep 15 ms
Burst-Mode Section
VBURH 0.6 0.7 0.8 V
VBURL Burst-Mode Voltage VCC = 14V, VFB Sweep 0.4 0.5 0.6 V
Hys 200 mV
Protection Section
ILIM Peak Drain Current Limit di/dt = 300mA/s 1.64 1.80 1.96 A
VSD Shutdown Feedback Voltage VCC = 14V, VFB Sweep 5.5 6.0 6.5 V
IDELAY Shutdown Delay Current VCC = 14V, VFB = 4V 2.5 3.3 4.1 A
(13)(14)
tLEB Leading-Edge Blanking Time 300 ns
VOVP Over-Voltage Protection VCC Sweep 23.0 24.5 26.0 V
tOSP Threshold Time 1.0 1.2 1.4 s
OSP Triggered when
Output Short
VOSP (13) Threshold VFB tON<tOSP & VFB>VOSP 1.8 2.0 2.2 V
Protection
(Lasts Longer than tOSP_FB)
tOSP_FB VFB Blanking Time 2.0 2.5 3.0 s
TSD (13)
Shutdown Temperature 130 140 150 C
Thermal Shutdown Temperature
Hys Hysteresis 30 C

Continued on the following page…

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 5
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Electrical Characteristics (Continued)
TJ = 25C unless otherwise specified.

Symbol Parameter Conditions Min. Typ. Max. Unit

Total Device Section
Operating Supply Current,
IOP VCC = 14V, VFB = 0V 1.2 1.6 2.0 mA
(Control Part in Burst Mode)
Operating Switching Current,
IOPS VCC = 14V, VFB = 4V 2.0 2.5 3.0 mA
(Control Part and SenseFET Part)
VCC = 11V (Before VCC
ISTART Start Current 0.5 0.6 0.7 mA
Reaches VSTART)
ICH Startup Charging Current VCC = VFB = 0V, VSTR = 40V 1.00 1.15 1.30 mA
VSTR Minimum VSTR Supply Voltage VCC = VFB = 0V, VSTR Sweep 26 V
Notes:
13. Although these parameters are guaranteed, they are not 100% tested in production.
14. tLEB includes gate turn-on time.

Comparison of FSDM0465RE and FSGM0465R

Function FSDM0465RE FSGM0465R Advantages of FSGM0465R
Burst Mode Advanced Burst Advanced Soft Burst Low noise and low standby power
Enhanced SenseFET and controller against
Lightning Surge Strong
lightning surge
Soft-Start 10ms (Built-in) 15ms (Built-in) Longer soft-start time
OLP
OLP OVP
Protections OVP OSP Enhanced protections and high reliability
TSD AOCP
TSD with Hysteresis
The difference of input power between the low
Power Balance Long TCLD Very Short TCLD
and high input voltage is quite small

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 6
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Typical Performance Characteristics
Characteristic graphs are normalized at TA=25°C.

1.20 1.20

1.15 1.15

1.10 1.10
Normalized

Normalized
1.05 1.05

1.00 1.00

0.95 0.95

0.90 0.90

0.85 0.85

0.80 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 5. Operating Supply Current (IOP) vs. TA Figure 6. Operating Switching Current (IOPS) vs. TA

1.40 1.20

1.30 1.15

1.20 1.10
Normalized

Normalized

1.10 1.05

1.00 1.00

0.90 0.95

0.80 0.90
0.70 0.85
0.60 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 7. Startup Charging Current (ICH) vs. TA Figure 8. Peak Drain Current Limit (ILIM) vs. TA

1.20 1.20

1.15 1.15

1.10 1.10
Normalized
Normalized

1.05 1.05

1.00 1.00

0.95 0.95

0.90 0.90

0.85 0.85

0.80 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 9. Feedback Source Current (IFB) vs. TA Figure 10. Shutdown Delay Current (IDELAY) vs. TA

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 7
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Typical Performance Characteristics
Characteristic graphs are normalized at TA=25°C.

1.20 1.20

1.15 1.15

1.10 1.10
Normalized

Normalized
1.05 1.05

1.00 1.00

0.95 0.95

0.90 0.90

0.85 0.85

0.80 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 11. UVLO Threshold Voltage (VSTART) vs. TA Figure 12. UVLO Threshold Voltage (VSTOP) vs. TA

1.20 1.20

1.15 1.15

1.10 1.10
Normalized

Normalized

1.05 1.05

1.00 1.00

0.95 0.95

0.90 0.90

0.85 0.85

0.80 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 13. Shutdown Feedback Voltage (VSD) vs. TA Figure 14. Over-Voltage Protection (VOVP) vs. TA

1.20 1.20

1.15 1.15

1.10 1.10
Normalized

Normalized

1.05 1.05

1.00 1.00

0.95 0.95

0.90 0.90

0.85 0.85

0.80 0.80
-40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃ -40℃ -25℃ 0℃ 25℃ 50℃ 75℃ 100℃ 125℃
Temperature [ C] Temperature [ C]

Figure 15. Switching Frequency (fS) vs. TA Figure 16. Maximum Duty Ratio (DMAX) vs. TA

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 8
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Functional Description
1. Startup: At startup, an internal high-voltage current 3. Feedback Control: This device employs current-
source supplies the internal bias and charges the mode control, as shown in Figure 18. An opto-coupler
external capacitor (CVcc) connected to the VCC pin, as (such as the FOD817) and shunt regulator (such as the
illustrated in Figure 17. When VCC reaches 12V, the KA431) are typically used to implement the feedback
FSGM0465R begins switching and the internal high- network. Comparing the feedback voltage with the
voltage current source is disabled. The FSGM0465R voltage across the RSENSE resistor makes it possible to
continues normal switching operation and the power is control the switching duty cycle. When the reference pin
supplied from the auxiliary transformer winding unless voltage of the shunt regulator exceeds the internal
VCC goes below the stop voltage of 7.5V. reference voltage of 2.5V, the opto-coupler LED current
increases, pulling down the feedback voltage and
VDC reducing drain current. This typically occurs when the
input voltage is increased or the output load is decreased.

CVcc 3.1 Pulse-by-Pulse Current Limit: Because current-

mode control is employed, the peak current through
the SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 18. Assuming
VCC VSTR
3 6
that the 210μA current source flows only through the
internal resistor (3R + R =11.6kΩ), the cathode
voltage of diode D2 is about 2.4V. Since D1 is
ICH
blocked when the feedback voltage (V FB) exceeds
2.4V, the maximum voltage of the cathode of D2 is
Vref clamped at this voltage. Therefore, the peak value of
VCC good the current through the SenseFET is limited.
7.5V/12V

Internal
Bias 3.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
Figure 17. Startup Block usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
2. Soft-Start: The FSGM0465R has an internal soft- reverse recovery. Excessive voltage across the
start circuit that increases PWM comparator inverting RSENSE resistor leads to incorrect feedback operation
input voltage, together with the SenseFET current, in the current mode PWM control. To counter this
slowly after it starts. The typical soft-start time is 15ms. effect, the FSGM0465R employs a leading-edge
The pulse width to the power switching device is blanking (LEB) circuit. This circuit inhibits the PWM
progressively increased to establish the correct working comparator for tLEB (300ns) after the SenseFET is
conditions for transformers, inductors, and capacitors. turned on.
The voltage on the output capacitors is progressively
increased to smoothly establish the required output
voltage. This helps prevent transformer saturation and
reduces stress on the secondary diode during startup.
Drain
1
VCC Vref

IDELAY IFB OSC

FB
VOUT VFB 3R PWM
4
FOD817 D1 D2 Gate
Driver
CFB VFB* R
LEB(300ns)

OSP
KA431 VOSP RSENSE
AOCP GND
VAOCP 2
OLP
VSD

Figure 18. Pulse Width Modulation Circuit

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 9
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
4. Protection Circuits: The FSGM0465R has several increasing until it reaches 6.0V, when the switching
self-protective functions, such as Overload Protection operation is terminated, as shown in Figure 20. The
(OLP), Abnormal Over-Current Protection (AOCP), delay time for shutdown is the time required to charge
Output-Short Protection (OSP), Over-Voltage Protection CFB from 2.4V to 6.0V with 3.3µA. A 25 ~ 50ms delay
(OVP), and Thermal Shutdown (TSD). All the is typical for most applications. This protection is
protections are implemented as auto-restart. Once the implemented in auto-restart mode.
fault condition is detected, switching is terminated and
the SenseFET remains off. This causes VCC to fall. VFB
Overload Protection
When VCC falls to the Under-Voltage Lockout (UVLO)
B B

stop voltage of 7.5V, the protection is reset and the

6.0V
startup circuit charges the VCC capacitor. When VCC
reaches the start voltage of 12.0V, the FSGM0465R
resumes normal operation. If the fault condition is not
removed, the SenseFET remains off and V CC drops to
stop voltage again. In this manner, the auto-restart can 2.4V
alternately enable and disable the switching of the
power SenseFET until the fault condition is eliminated. t12= CFB×(6.0-2.4)/Idelay
Because these protection circuits are fully integrated
into the IC without external components, the reliability is
improved without increasing cost. t1 t2 t

Power Fault Fault

VDS Figure 20. Overload Protection
on occurs removed

4.2 Abnormal Over-Current Protection (AOCP):

When the secondary rectifier diodes or the
transformer pins are shorted, a steep current with
extremely high di/dt can flow through the SenseFET
during the minimum turn-on time. Even though the
FSGM0465R has overload protection, it is not
VCC enough to protect the FSGM0465R in that abnormal
case; since severe current stress is imposed on the
SenseFET until OLP is triggered. The FSGM0465R
12.0V internal AOCP circuit is shown in Figure 21. When
7.5V the gate turn-on signal is applied to the power
SenseFET, the AOCP block is enabled and monitors
the current through the sensing resistor. The voltage
t across the resistor is compared with a preset AOCP
level. If the sensing resistor voltage is greater than
Normal Fault Normal
operation situation operation
the AOCP level, the set signal is applied to the S-R
latch, resulting in the shutdown of the SMPS.
Figure 19. Auto-Restart Protection Waveforms Drain
1
4.1 Overload Protection (OLP): Overload is defined
OSC
as the load current exceeding its normal level due to
an unexpected abnormal event. In this situation, the 3R
PWM
protection circuit should trigger to protect the SMPS.
Gate
However, even when the SMPS is in normal Driver
operation, the overload protection circuit can be VFB* R
triggered during the load transition. To avoid this LEB(300ns)
undesired operation, the overload protection circuit is
designed to trigger only after a specified time to
determine whether it is a transient situation or a true RSENSE
overload situation. Because of the pulse-by-pulse Q S GND
current limit capability, the maximum peak current VAOCP 2
through the SenseFET is limited and, therefore, the Q R VCC good
maximum input power is restricted with a given input
voltage. If the output consumes more than this
maximum power, the output voltage (VOUT) decreases Figure 21. Abnormal Over-Current Protection
below the set voltage. This reduces the current
through the opto-coupler LED, which also reduces
the opto-coupler transistor current, thus increasing
the feedback voltage (VFB). If VFB exceeds 2.4V, D1 is
blocked and the 3.3µA current source starts to charge
CFB slowly up. In this condition, VFB continues

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 10
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
4.3. Output-Short Protection (OSP): If the output is 4.5 Thermal Shutdown (TSD): The SenseFET and
shorted, steep current with extremely high di/dt can the control IC on a die in one package makes it
flow through the SenseFET during the minimum turn- easier for the control IC to detect the over
on time. Such a steep current brings high-voltage temperature of the SenseFET. If the temperature
stress on the drain of the SenseFET when turned off. exceeds ~140C, the thermal shutdown is triggered
To protect the device from this abnormal condition, and the FSGM0465R stops operation. The
OSP is included. It is comprised of detecting V FB and FSGM0465R operates in auto-restart mode until the
SenseFET turn-on time. When the VFB is higher than temperature decreases to around 110C, when
2V and the SenseFET turn-on time is lower than normal operation resumes.
1.2μs, the FSGM0465R recognizes this condition as
an abnormal error and shuts down PWM switching 5. Soft Burst-Mode Operation: To minimize power
until VCC reaches VSTART again. An abnormal dissipation in standby mode, the FSGM0465R enters
condition output short is shown in Figure 22. burst-mode operation. As the load decreases, the
feedback voltage decreases. As shown in Figure 23,
MOSFET Rectifier the device automatically enters burst mode when the
ILIM
Drain Diode
VFB*=0.5V
feedback voltage drops below VBURL (500mV). At this
Current Current point, switching stops and the output voltages start to
→ VFB=2.0V
VFB* drop at a rate dependent on standby current load. This
causes the feedback voltage to rise. Once it passes
ILm
VBURH (700mV), switching resumes. At this point, the
drain current peak increases gradually. This soft burst-
0 t
1.2μs 1.2μs mode can reduce audible noise during burst-mode
tOFF tON
operation. The feedback voltage then falls and the
output short occurs process repeats. Burst-mode operation alternately
VOUT
enables and disables switching of the SenseFET,
thereby reducing switching loss in standby mode.
IOUT
0 t
OSP triggered VO
OSP

0 t
Figure 22. Output-Short Protection t
VFB

4.4 Over-Voltage Protection (OVP): If the 0.70V

secondary-side feedback circuit malfunctions or a 0.50V
solder defect causes an opening in the feedback t
path, the current through the opto-coupler transistor IDS
becomes almost zero. Then VFB climbs up in a similar Soft Burst
manner to the overload situation, forcing the preset
maximum current to be supplied to the SMPS until
the overload protection is triggered. Because more
energy than required is provided to the output, the t
output voltage may exceed the rated voltage before
the overload protection is triggered, resulting in the VDS
breakdown of the devices in the secondary side. To
prevent this situation, an OVP circuit is employed. In
general, the VCC is proportional to the output voltage
and the FSGM0465R uses VCC instead of directly t
monitoring the output voltage. If VCC exceeds 24.5V,
Switching Switching
an OVP circuit is triggered, resulting in the disabled disabled
t1 t2 t3 t4
termination of the switching operation. To avoid
undesired activation of OVP during normal operation, Figure 23. Burst-Mode Operation
VCC should be designed to be below 24.5V.

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 11
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
Typical Application Circuit
Application Input Voltage Rated Output Rated Power

LCD TV, Monitor 5.0V(2A)

85 ~ 265VAC 43.6W
Power Supply 14.0V(2.4A)

Key Design Notes:

1. The delay time for overload protection is designed to be about 30ms with C105 (27nF). OLP time between 25ms
(22nF) and 50ms (43nF) is recommended.
2. The SMD-type capacitor (C106) must be placed as close as possible to the VCC pin to avoid malfunction by
abrupt pulsating noises and to improve ESD and surge immunity. Capacitance between 100nF and 220nF is
recommended.

1. Schematic

D201 L201
T101
MBR20150CT 5µH
EER3016
14V, 2.4A
1 10
C201 C202 C206
R103 C104 1000µF 1000µF 100nF
R102 3.3nF 25V 25V SMD
43kΩ 2 6, 9
75kΩ 1W 630V
D101
C103 1N 4007
100µF 3
2 400V
BD101
G2SBA60 FSGM0465R C301
6 4.7nF
1 3 VSTR 1 Y2
Drain
R104 C106 C107 L202
D202
5 N.C. 62Ω 220nF 47µF 5µH
FYPF2006DN
0.5W SMD 50V
NTC101 VCC 5V, 2A
4 3
5D-9 4 FB 4 7, 8
GND D102 C203 C204 C207
C102 C105 2 UF 4004 100nF
2200µF 1000µF
150nF 27nF SMD
10V 16V
275VAC 100V
5 6, 9
ZD101
1N4749A

LF101
15mH

R201
330Ω

R101 R204
1.5MΩ 8kΩ
1W R202
R203 C205
1.2kΩ 47nF
18kΩ
IC301
FOD817B
F101 IC201
C101 KA431LZ
220nF FUSE R205
275VAC 250V 8kΩ
3.15A

Figure 24. Schematic of Demonstration Board

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 12
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
2. Transformer

EER3019 Barrier tape

1 10
N14V
Np/2 2 1
2 9
Np/2
Na 4 5
N5V 7 6
3 8
Np/2
N14V 10 8

4 7
N5V 8 9
Na N5V
Np/2 3 2
5 6
BOT TOP
Figure 25. Schematic of Transformer

3. Winding Specification
Barrier Tape
Pin (S → F) Wire Turns Winding Method
TOP BOT Ts
Np /2 3→2 0.3φ×1 23 Solenoid Winding

Insulation: Polyester Tape t = 0.025mm, 2 Layers

N5V 8→9 0.4φ×2 (TIW) 3 Solenoid Winding 3.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 Layers

N14V 10 → 8 0.4φ×2 (TIW) 5 Solenoid Winding 2.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 Layers

N5V 7→6 0.4φ×2 (TIW) 3 Solenoid Winding 3.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 Layers

Na 4→5 0.2φ×1 6 Solenoid Winding 3.0mm 4.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 Layers

Np/2 2→1 0.3φ×1 22 Solenoid Winding 2.0mm 1

Insulation: Polyester Tape t = 0.025mm, 2 Layers

4. Electrical Characteristics
Pin Specification Remark
Inductance 1－3 830H ± 7% 67kHz, 1V
Leakage 1－3 15H Maximum Short All Other Pins

5. Core & Bobbin

 Core: EER3019 (Ae=134.0mm2)
 Bobbin: EER3019
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
FSGM0465R • Rev. 1.0.3 13
 FSGM0465R — Green-Mode Fairchild Power Switch (FPS™)
6. Bill of Materials
Part # Value Note Part # Value Note
Fuse Capacitor
F101 250V 3.15A C101 220nF/275V Box (Pilkor)
NTC C102 150nF/275V Box (Pilkor)
NTC101 5D-9 DSC C103 100F/400V Electrolytic (SamYoung)
Resistor C104 3.3nF/630V Film (Sehwa)
R101 1.5MΩ, J 1W C105 27nF/100V Film (Sehwa)
R102 75kΩ, J 1/2W C106 220nF SMD (2012)
R103 43kΩ, J 1W C107 47F/50V Electrolytic (SamYoung)
R104 62Ω, J 1/2W C201 1000F/25V Electrolytic (SamYoung)
R201 330Ω, F 1/4W, 1% C202 1000F/25V Electrolytic (SamYoung)
R202 1.2kΩ, F 1/4W, 1% C203 2200F/10V Electrolytic (SamYoung)
R203 18kΩ, F 1/4W, 1% C204 1000F/16V Electrolytic (SamYoung)
R204 8kΩ, F 1/4W, 1% C205 47nF/100V Film (Sehwa)
R205 8kΩ, F 1/4W, 1% C206 100nF SMD (2012)
IC C207 100nF SMD (2012)
Fairchild
FSGM0465R FSGM0465R C301 4.7nF/Y2 Y-cap (Samhwa)
Semiconductor
Fairchild
IC201 KA431LZ Inductor
Semiconductor
Fairchild
IC301 FOD817B LF101 15mH Line filter 0.5Ø
Semiconductor
Diode L201 5H 5A Rating
D101 1N4007 Vishay L202 5H 5A Rating
D102 UF4004 Vishay Jumper
ZD101 1N4749 Vishay J101
Fairchild
D201 MBR20150CT Transformer
Semiconductor
Fairchild
D202 FYPF2006DN T101 830H
Semiconductor
BD101 G2SBA60 Vishay

© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com

FSGM0465R • Rev. 1.0.3 14
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