LTK5313 5W Mono Charge-Pumped Class AB/D Audio Power Amplifier

LTK5313 Features LTK5313 General Description

 Operating Voltage: 2.8V-5V The LTK5313 is a mono, filter-free Class-D audio
 Four AGC modes amplifier with capacitor charge-pumped integrated,
 Integrated Charge-Pumped with Adaptive Control available in ESOP-10 package.
 No External Inductor and Diode Required
 Output Power The built-in charge-pumped converter generates
at 10% THD+N selectable 6.4V supply voltage for the Class-D amplifier.
This provides a much louder audio output than a
– 5W, at VDD=4.2V, RL=4Ω
stand-alone amplifier directly connected to the battery.
at 1% THD+N
The Automatic Gain Control (AGC) adjusts Class-D gain
– 4.2W, at VDD=4.2V, RL=4Ω
to prevent heavy clipping.
 Thermal and Over-Current Protections
 One-Wire Pulse Control The LTK5313 also provide AB/D function, this function
 Ultra Now Noise: 90uV can completely avoid the FM disturbance when set to AB
 Excellent de-POP function mode. High PSRR and differential architecture provide

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 Space Saving Packages increased immunity to noise and RF rectification. In

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ESOP-10 addition to these features, a fast startup time and small
 Lead Free and Green Device Available package size make the LTK5313 an ideal choice for
(RoHS Compliant) portable devices.
Moreover, the LTK5313 provides thermal and short
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LTK5313 Applications
LTK5313 Simplified Application Circuit
 Bluetooth audio; Smart audio
 Loud speaker
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 Portable multimedia device
 Consumer audio equipment 2.5V~5V

470u 1uF 1uF

EN STATUS VDD AVDD

0~0.5V Disable
1 5
hi 源

1.1~1.4V AB
OUT+
1.8~2.1V D AGC On 9
2.3~5.5V D AGC Off
EN RL
4
One Pulse Control OUT-
LTK5313 8

Cin Rin IN-

IN- 7 CPOUT
C 矽

10
Cin Rin IN+ (ESOP-10)
470uF 1uF
IN+ 6
2 3 11
CP CN
GND

4.7uF

Fig.1 Application Circuit

LTK5313 Order and Marking Information

Packge Code
LTK5313
ES: ESOP-10
Assembly Material Handling Code
Handling Code TR: Tape & Reel
Packge Code Assembly Material
G: Halogen and Lead Free Device

LTK5313 ESP: LTK5313 X - Data Code

XXYY Y – Lot Number

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LTK5313 Pin Configuration
ESOP-10

1 VDD CPOUT 10

2 CP OUT+ 9

GND
3 CN OUT- 8

4 EN IN- 7

5 AVDD IN+ 6

Fig.2 Pin Configuration

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LTK5313 Pin Function Description
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NO. NAME IO FUNCTION DESCRIPTION

1 VDD IO Power for Charge-Pump

2 CP IO Flying Positive Connected to External Cap
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3 CN IO Flying Negative Connected to External Cap

4 EN I Shutdown, AGC, AB/D Control
5 AVDD IO Input Analog Power Input
hi 源

6 IN+ I Positive Audio Input

7 IN- I Negative Audio Input
8 OUTP O Positive Audio Output
9 OUTN O Negative Audio Output
C 矽

10 CPOUT O Charge-Pumped Output Power

11 PGND IO Exposed Ground Pad

LTK5313 Absolute Maximum Ratings

SYMBOL PARAMETER RATING UNIT

AVDD Supply Voltage (VDD to GND) 5V

VDD Supply Voltage (VDD to GND) 5V
ο
TJ Maximum Junction Temperature 150 C
TSTG Storage Temperature Range -65 to +150
TSDR Soldering Temperature Range 230
PD Power Dissipation Internally Limited W
Note 1.Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

LTK5313 Thermal Characteristics

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 SYMBOL PARAMETER VALUE UNIT

Thermal Resistance -Junction to Ambient (Note 2) ο

C
θJA 160
/W
Note 2. Please refer to “Layout Recommendation”, the Thermal Pad on the bottom of the IC should soldered directly to the
PCB's Thermal Pad area that with several thermal vias connect to the ground plan, and the PCB is a 2-layer, 5-inch
square area with 2oz copper thickness.

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pS 特
hi 源
C 矽

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LTK5313 Recommended Operating Conditions

Symbol Parameter Min. Max. Unit

VDD Supply Voltage 3 5

VIH High Level Threshold Voltage EN 1.5
V
VIL Low Level Threshold Voltage EN 0.4
TA Ambient Temperature Range -40 85
ο
C
TJ Junction Temperature Range -40 125
RL Speaker Resistance 3.5 Ω

LTK5313 Electrical Characteristics

VDD=3.7V, GND=0V, AV=22dB, TA= 25οC (unless otherwise noted)

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Symbol Parameter Test Condition Min. Typ. Max. Unit

IDD Supply Current Class D mode 6 mA

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IDD Supply Current Class AB mode 6 mA

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ISD Shutdown Current EN=0V 10 µA
FOSC1 Class D Frequency VBAT=3.7V 450 680 700 kHz
Charge Pump
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FOSC2 VBAT=3.7V 1000 1200 1300 kHz
Frequency
Static Drain-Source PVDD=6.4V, IL=1A NMOSFET 120
RDS(ON) On-State Resistance mΩ
(PMOSFET+NMOSFET) PVDD=6.4V, IL=1A PMOSFET 150
hi 源

PO=1W, RL=4Ω+33µH 80
η Efficiency %
PO=4.7W, RL=4Ω+33µH 79
RL=4Ω
C 矽

THD+N=1%, RL=4Ω 4.2

fin=1kHz, VBAT=4.2V,
Total Harmonic RL=8Ω 2.5
PVDD=6.4V
THD+N Distortion Pulse W
THD+N=10%, RL=4Ω 5.0
Noise
fin=1kHz, VBAT=4.2V,
PVDD=6.4V RL=8Ω 2.82
VOS Output Offset Voltage RL=4Ω 20 mV

Vn Noise Output Voltage With A-weighted Filter, RL=4Ω 90 µVrms

With A-weighted Filter PO=2W,
S/N Signal to Noise Ratio 80
RL=4Ω
Power Supply dB
PSRR RL=4Ω, fin=217Hz, Vrr=0.2Vpp -80 -60
Rejection Ratio
Attshutdown Shutdown Attenuation fin=1kHz, RL=8Ω, Vin=1Vpp -115 -90

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 LTK5313 Characteristic curve test condition (TA=25℃)

Description Test Conditions Serial No.

Output Power VS THD+N RL=4Ω+33uH, Class D Fig.3

Output Power VS THD+N RL=4Ω+33uH, Class AB Fig.4
Efficiency VS Output Power VBAT=3.7V, RL=4Ω+33uH Fig.5
Input Voltage VS Maximum Output
RL=4Ω+33uH THD+N=10% Fig.6
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Frequency Response VBAT=3.8V, RL=4Ω+33uH Fig.7
Frequency VS THD+N% VBAT=3.8V, RL=4Ω+33uH Po=1W Fig.8

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pS 特
hi 源
C 矽

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 rc 技
Fig.3 Output Power VS THD+N Fig.4 Output Power VS THD+N

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pS 特
hi 源

Fig.5 Efficiency VS Output Power Fig.6 Input Voltage VS Maximum Output Power
C 矽

Fig.7 Frequency Response Fig.8 Frequency VS THD+N%

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LTK5313 Application Information
EN Pin Control
LTK5313 has two modes of control: Software control (pulse control) & Hardware control (level control).
Software control:
Different rise edge of pulse controls different mode functions.
1st edge Class D AGC off；

Hold High

>20mS

2nd edge AGC1 (THD<6%)

T=10uS

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Hold High

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>20mS

3rd edge AGC2 (THD<5%）

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T=10uS

Hold High
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>20mS

4th edge AGC3 (THD<3%）

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T=10uS

Hold High

>20mS
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5th edge AGC4 (THD<2%）

T=10uS

Hold High

>20mS

6th edge Class AB mode

T=10uS

Hold High

>20mS

Hardware control：
Different levels of EN controls Class AB & D functions

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 V(EN) Status

<0.5V Shut Down

0.9V-1.3V Class AB mode
1.6V-2.1V Class D AGC On
2.5V-VDD Class D AGC Off
.
Input Resistor, Rin

The LTK5313’s input resistor is fixed, and the value is 20k, the input resistance have wide variation (+/-5%) caused by
manufacture.

The gain can also be set by the external resistors Rin.

480k
Av =

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20k + R IN

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The 6.5k is the internal input resistor, and the Rin is the external input resistor. Different feedback resistor is set
according to Class D or Class AB mode. For fully differential operating, The Rin match is very important for CMRR,
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PSRR and harmonic distortion performance. It’s recommended use 1% tolerance resistor or better.

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Input Capacitor, Ci

In the typical application an input capacitor, Ci, is required to allow the amplifier to bias the input signal to the proper
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DC level for optimum operation. In this case, Ci and the input impedance Ri form a high-pass filter with the corner
frequency determined in the follow equation:

1
f C(highpass) = (3)
2πR i Ci
hi 源

The value of Ci is important to consider as it directly affects the low frequency performance of the circuit. Where Ri is
25kΩ (minimum) and the specification calls for a flat bass response down to 20Hz. Equation is reconfigured as follow:
C 矽

1
Ci = (4)
2πR i f c

To consider input resistance variation, the Ci is 0.1µF so one would likely choose a value in the range of 0.1µF to 0.
47uF. A further consideration for this capacitor is the leakage path from the input source through the input network (Ri +
Rf, Ci) to the load. This leakage current creates a DC offset voltage at the input to the amplifier that reduces useful
headroom, especially in high gain applications. For this reason, a low-leakage tantalum or ceramic capacitor is the best
choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most
applications as the DC level there is held at VDD/2, which is likely higher that the source DC level. Please note that it is
important to confirm the capacitor polarity in the application.
Ferrite bead selection
If the traces form LTK5313 to speaker is short, the ferrite bead filters can reduce the high frequency radiated to meet
the FCC & CE required.

A ferrite that has very low impedance at low frequencies and high impedance at high frequencies (above 1 MHz) is
recommended.
Output Low-Pass Filter
If the traces form LTK5313 to speaker are short, it doesn’t require output filter for FCC & CE standard.

A ferrite bead may need if it’s failing the test for FCC or CE tested without the LC filter. The figure 9 is the sample for
added ferrite bead; the ferrite show choosing high impedance in high frequency.

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 Ferrite
VON Bead

1nF

Ferrite
Bead 4Ω
VOP
1nF

Fig.9 Ferrite bead output filter

Figures 10 and 11 are examples for added the LC filter (Butterworth), it’s recommended for the situation that the trace
form amplifier to speaker is too long and need to eliminate the radiated emission or EMI.

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OUTP 36µH

1µF

36µH 8Ω
OUTN
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1µF

Fig.10 LC output filter for 8Ω speaker

pS 特

OUTP 18µH
hi 源

2.2µF

18µH 4Ω
OUTN

2.2µF
C 矽

Fig.11 LC output filter for 4Ω speaker

Fig.10 and 11’s low pass filter cut-off frequency are 25kHz (FC).

1
f C(lowpass) = (6)
2π LC
Power-Supply Decoupling Capacitor, CS
The LTK5313 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure
the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents the oscillations
causing by long lead length between the amplifier and the speaker.

The optimum decoupling is achieved by using two different type capacitors that target on different type of noise on the
power supply leads. For higher frequency transients, spikes, or digital hash on the line, a good low
equivalent-series-resistance (ESR) ceramic capacitor, typically 0.1µF placed as close as possible to the device VDD
pin for works best. For filtering lower frequency noise signals, a large aluminum electrolytic capacitor of 10µF or greater
placed near the audio power amplifier is recommended.

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LTK5313 Package Information

C2

A
b
e
GND
B

PAD
D

C3

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C

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D1
C1
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L θ2
E3
pS 特

θ1

Dimensions In Millimeters Dimensions In Inches

hi 源

Symbol
Min Nom Max Min Nom Max
A 2.31 2.40 2.51 0.091 0.094 0.098
C 矽

B 3.20 3.30 3.40 0.126 0.129 0.132

b 0.33 0.42 0.51 0.013 0.017 0.020
C 3.8 3.90 4.00 0.15.50 0.15.54 0.15.57
C1 5.8 6.00 6.2 0.228 0.235 0.244
C2 1.35 1.45 1.55 0.053 0.058 0.061
C3 0.05 0.12 0.15.5 0.004 0.007 0.010
D 4.70 5.00 5.1 0.185 0.190 0.200
D1 1.35 1.60 1.75 0.053 0.06 0.069
e 1.270(BSC) 0.050(BSC)
L 0.400 0.83 1.27 0.016 0.035 0.050

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